61GICT-ND
Abstract: SMCJ188A-E3 1N6290AGOS-ND 1N6295AGOS-ND SMAJ12A-E3 TVS SMBJ5.0CA smbj3v3-e3 smcj33a-e3 SMCJ15CA smcj24a-e3
Text: Transient Voltage Suppressors 1500 Watt Mosorb TVS Breakdown Voltage VBR Min. Nom. Max. VRWM Minimum V (Cont.) IR @ Tape and Reel VRWM Digi-Key Pricing Digi-Key Pricing (µA) Part No. 1 10 100 250 Part No. 1,500 40.9 43 45.2 36.8 5 1N6286AGOS-ND◊ .77
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1N6286AGOS-ND
1N6287AGOS-ND
1N6380GOS-ND
1N6288ARL4GOSCT-ND
1N6288ARL4GOSTR-ND
1N6290AGOS-ND
MCJ188CA-E3/57TGICT-ND
SMCJ188CA-E3/57TGITR-ND
SA12CA-E3/1GI-ND
P6KE36CA-E3/1GI-ND
61GICT-ND
SMCJ188A-E3
1N6290AGOS-ND
1N6295AGOS-ND
SMAJ12A-E3
TVS SMBJ5.0CA
smbj3v3-e3
smcj33a-e3
SMCJ15CA
smcj24a-e3
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TK12A10K3
Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
Text: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3
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BCJ0082D
BCJ0082C
TK12A10K3
tk25e06k3
TK50E06K3A
tk20e60u
TPCA*8065
TJ11A10M3
SSM6J501NU
TPCA8077
TJ9A10M3
TK8A10K3
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ND SOT-323
Abstract: No abstract text available
Text: BAT54W SERIES SURFACE MOUNT SCHOTTKY BARRIER VOLTAGE 30 Volts CURRENT 0.2 Amperes FEATURES • Low turn-on voltage • Fast switching • PN Junction Guard Ring for Transient and ESD Protection. • Lead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . Halogen Free
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BAT54W
2002/95/EC
IEC61249
OT-323,
MIL-STD-750
Method2026
2011-REV
RB500V-40
ND SOT-323
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sot323 diode marking 38w
Abstract: MARKING 38W PRODUCT MARKING CODE 38W
Text: BSS138W 50V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-323 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@2.5V,IDS@100mA=6Ω 0.087(2.20) 0.070(1.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance
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BSS138W
500mA
200mA
OT-323
100mA
OT-323
2010-REV
RB500V-40
sot323 diode marking 38w
MARKING 38W
PRODUCT MARKING CODE 38W
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Transistor C1173
Abstract: L1210 tyco resolver C1173 transistor transistor c929 Transistor C1173 1A Tx C1173 transistor 6ED100HP1-FA C1211 transistor C1161
Text: HybridPACK Hybrid Kit for HybridPACK™1 Evaluation Kit for Applications with HybridPACK™1 Module Application Note V2.3, 2010-10-15 System Engineering Edition 2010-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG
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inR214
R0402
R0603
3314J
Transistor C1173
L1210
tyco resolver
C1173 transistor
transistor c929
Transistor C1173 1A
Tx C1173 transistor
6ED100HP1-FA
C1211 transistor
C1161
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oriole lcd datasheet
Abstract: ODM16216-9SL 26 pin male FRC connector FRC 14 PIN Male connector ecg manual ic moving message LED display schematic smd 5VOLT AUDIO AMPLIFIER IC 16 x 32 led matrix pc based moving message display using lcd ECG ic manual
Text: USER MANUAL STM32 Based LED Matrix Display Demo Introduction This user manual describes the operation of STM32 based LED Matrix Display Demo board. This board demonstrates the capability of STP16DP05 LED driver to drive the matrix LED panel. The complete system includes one master board, one slave board and LED Matrix
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STM32
STP16DP05
293D106X96R3
4752683-1ND
PCC182
74293D106
X96R3A2
oriole lcd datasheet
ODM16216-9SL
26 pin male FRC connector
FRC 14 PIN Male connector
ecg manual ic
moving message LED display schematic
smd 5VOLT AUDIO AMPLIFIER IC
16 x 32 led matrix
pc based moving message display using lcd
ECG ic manual
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BAS19W~BAS21W SURFACE MOUNT SWITCHING DIODES 120-250 Volts POWER 200mWatts SOT-323 Unit：inch mm 0.004(0.10)MIN. FEATURES • Fast switching speed. 0.087(2.20) 0.070(1.80) • Surface mount package Ideally Suited for Automatic insertion 0.087(2.20)
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BAS19W
BAS21W
200mWatts
OT-323
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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Untitled
Abstract: No abstract text available
Text: MMBT3904W NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 150 mWatts SOT-323 Unit：inch mm 0.004(0.10)MIN. • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V 0.087(2.20) 0.070(1.80) • Collector current I C = 200mA
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MMBT3904W
OT-323
200mA
OT-323,
MIL-STD-750,
2010-REV
RB500V-40
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ND SOT-323
Abstract: No abstract text available
Text: DATA SHEET BAS19W~BAS21W SURFACE MOUNT SWITCHING DIODES VOLTAGE 120-250 Volts POWER SOT-323 200mWatts Unit: inch mm FEATURES .087(2.2) .070(1.8) • Electrically Identical to Standard JEDEC .054(1.35) .045(1.15) • High Conductance .087(2.2) .078(2.0) • Surface mount package Ideally Suited for Automatic insertion
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BAS19W
BAS21W
200mWatts
OT-323
OT-323,
MIL-STD-202,
ND SOT-323
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BAS19W~BAS21W SURFACE MOUNT SWITCHING DIODES VOLTAGE 120-250 Volts POWER SOT-323 200mWatts Unit: inch mm FEATURES .087(2.2) .070(1.8) • Electrically Identical to Standard JEDEC .054(1.35) .045(1.15) • High Conductance .087(2.2) .078(2.0) • Surface mount package Ideally Suited for Automatic insertion
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BAS19W
BAS21W
OT-323
200mWatts
OT-323,
MIL-STD-202,
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ND SOT-323
Abstract: BAS21W BAS19W RA SOT323 BAS19W PANJIT
Text: DATA SHEET BAS19W~BAS21W SOT-323 SURFACE MOUNT SWITCHING DIODES POWER 200mWatts FEATURES .087 2.2 .070(1.8) • Fast switching speed. .087(2.2) .078(2.0) 120-250 Volts .004(.10)MIN. VOLTAGE Unit: inch (mm) .054(1.35) .045(1.15) • Surface mount package Ideally Suited for Automatic insertion
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BAS19W
BAS21W
OT-323
200mWatts
2002/95/EC
OT-323,
MIL-STD-750,
ND SOT-323
BAS21W
RA SOT323
BAS19W PANJIT
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ND SOT-323
Abstract: No abstract text available
Text: DATA SHEET BAS19W~BAS21W SURFACE MOUNT SWITCHING DIODES 120-250 Volts POWER SOT-323 200mWatts Unit：inch mm 0.004(0.10)MIN. FEATURES • Fast switching speed. 0.087(2.20) 0.070(1.80) • Surface mount package Ideally Suited for Automatic insertion 0.087(2.20)
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BAS19W
BAS21W
200mWatts
OT-323
OT-323,
MIL-STD-750,
ND SOT-323
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c828 npn transistor datasheet
Abstract: FS800R06KE3 c828 npn 09HVD6B-EMGF-NR TOKO CERAMIC FILTER a50 c828 TRANSISTOR equivalent c828 transistor diode in40 gp WMV smd transistor c828 transistor datasheet
Text: HybridPACK Hybrid Kit for HybridPACK™2 Evaluation Kit for Applications with HybridPACK™2 Module Application Note V2.2, 2010-03 System Engineering Edition 2010-03 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG
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intellecR214
R0402
R0603
3314J
c828 npn transistor datasheet
FS800R06KE3
c828 npn
09HVD6B-EMGF-NR
TOKO CERAMIC FILTER a50
c828 TRANSISTOR equivalent
c828 transistor
diode in40 gp
WMV smd transistor
c828 transistor datasheet
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marking code 46B
Abstract: BC847CW PAN JIT
Text: BC846AW ~ BC850CW NPN GENERAL PURPOSE TRANSISTORS CURRENT 30/45/65 Volts VOLTAGE 150 mWatts SOT-323 Unit：inch mm 0.004(0.10)MIN. • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Lead free in comply with EU RoHS 2002/95/EC directives.
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BC846AW
BC850CW
OT-323
100mA
2002/95/EC
IEC61249
OT-323,
MIL-STD-750,
BC846AW
BC846BW
marking code 46B
BC847CW PAN JIT
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k72 wn
Abstract: k72 diode 2N7002KW
Text: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition
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2N7002KW
500mA
200mA
2002/95/EC
OT-323
MIL-STD-750
2010-REV
k72 wn
k72 diode
2N7002KW
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K72 marking diode
Abstract: No abstract text available
Text: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition
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2N7002KW
500mA
200mA
2002/95/EC
OT-323
MIL-STD-750
2010-REV
K72 marking diode
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Untitled
Abstract: No abstract text available
Text: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-323 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • Advanced Trench Process Technology 0.087(2.20) 0.070(1.80) • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition
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2N7002KW
500mA
200mA
OT-323
OT-323
Packa23
2010-REV
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sot323 diode marking 38w
Abstract: No abstract text available
Text: BSS138W 50V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@2.5V,IDS@100mA=6Ω 0.087(2.20) 0.070(1.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance
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BSS138W
500mA
200mA
100mA
2002/95/EC
OT-323
MIL-STD-750
2010-REV
OT-323
sot323 diode marking 38w
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M2A transistor
Abstract: No abstract text available
Text: MMBT2222AW NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 150 mWatts SOT-323 Unit：inch mm • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V 0.087(2.20) 0.070(1.80) • Collector current IC = 600mA • /
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MMBT2222AW
600mA
OT-323
OT-323,
MIL-STD-750,
2010-REV
RB500V-40
MMBT2222AW
M2A transistor
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PRODUCT MARKING CODE 38W
Abstract: No abstract text available
Text: BSS138W 50V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-323 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@2.5V,IDS@100mA=6Ω 0.087(2.20) 0.070(1.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance
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BSS138W
500mA
200mA
OT-323
100mA
OT-323
2010-REV
PRODUCT MARKING CODE 38W
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zxsc310
Abstract: transistor c310 samwha capacitor GENERIC CAPACITOR ZHCS750 ZHCS500 ZXSC310E5 BAT54 C310 FMMT618
Text: ZXSC310 LED DRIVER SOLUTION FOR LCD BACKLIGHTING DEVICE DESCRIPTION The ZXSC310 is a single or multi cell LED driver designed for LCD backlighting applications. The input voltage range of the device is between 0.8V and 8V. This means the ZXSC310 is compatible with single
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ZXSC310
ZXSC310
transistor c310
samwha capacitor
GENERIC CAPACITOR
ZHCS750
ZHCS500
ZXSC310E5
BAT54
C310
FMMT618
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BFG87
Abstract: BSF17 BSF17W Philips BFQ bipolar transistor blt81 driver circuit BGY46B BFE505 T119 Transistor BFQ43 bgy132
Text: Philips Sem iconductors Selection guide Selection list GENERAL For further information, refer to Data Handbook SC08a “R F Bipolar transistors", to Data Handbook SC09 “R F Power Modules”and to Data Handbook SC14 “R F Wideband Transistors, Video Transistors and Modules"
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SC08a
PCD3315A
PCD3343A
PCD3344A
PCD3346
PCD3347
PCD3348A
PCD3349A
PCD3350A
PCD3351A
BFG87
BSF17
BSF17W
Philips BFQ bipolar transistor
blt81 driver circuit
BGY46B
BFE505
T119 Transistor
BFQ43
bgy132
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Untitled
Abstract: No abstract text available
Text: b3 L 7 E S M Q l G l bD l 2 53 M f l O T b Order this data sheet by MUN5111T1/D MOTOROLA SEMICONDUCTOR H TECHNICAL DATA Bias Resistor TVansistor PNP Silicon Surface Mount Transistor With Monolithic Bias Resistor N etw ork This new series of digital transistors is designed to replace a single device and
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MUN5111T1/D
SC-70/SOT-323
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
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