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    NDC632P Price and Stock

    onsemi NDC632P

    MOSFET P-CH 20V 2.7A SUPERSOT6
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    DigiKey NDC632P Cut Tape
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    NDC632P Reel
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    Freescale Semiconductor NDC632P

    2700 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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    Quest Components NDC632P 1,192
    • 1 $1.74
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    Fairchild Semiconductor Corporation NDC632P

    P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA NDC632P 4,019
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    NDC632P Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDC632P Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDC632P Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effec Original PDF
    NDC632P National Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDC632P Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDC632P National Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDC632P National Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDC632P_NF073 Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Transistor Original PDF
    NDC632P_NL Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Transistor Original PDF

    NDC632P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NDC632P

    Abstract: No abstract text available
    Text: June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -2.7A, -20V. RDS ON = 0.14Ω @ VGS = -4.5V RDS(ON) = 0.2Ω @ VGS = -2.7V. These P-Channel logic level enhancement mode power field effect transistors are produced using


    Original     		PDF June1996 NDC632P NDC632P

    CBVK741B019

    Abstract: F63TNR FDC633N NDC632P RCA 014
    Text: June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -2.7A, -20V. RDS ON = 0.14Ω @ VGS = -4.5V RDS(ON) = 0.2Ω @ VGS = -2.7V. These P-Channel logic level enhancement mode power field effect transistors are produced using


    Original     		PDF June1996 NDC632P CBVK741B019 F63TNR FDC633N NDC632P RCA 014

    NDC632P

    Abstract: No abstract text available
    Text: N June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF June1996 NDC632P NDC632P

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    08390

    Abstract: CDRH6D28-100 08149 MAX1701 NDC632P
    Text: 2.7V to 5.5V Input 2 POK, LBO UNUSED 6 16 to OUT 1 4 8 C7 0.22 3 L1 10uH Sumida CDRH6D28-100 (10uH 1.7A) LBN LXP POK LBO POUT MAX1701 LBP OUT FB 14 R1 10 C3 0.22 AIN C4 100uF 6.3V C5 100pF R3 215k R4 100k 9 10 R5 205k ONB\ PGND GND 12 C2 220 uF R2 6.3V 20k


    Original     		PDF CDRH6D28-100 MAX1701 100uF 100pF 560pF NDC632P QS03L 220uF 08390 CDRH6D28-100 08149 MAX1701 NDC632P

    SONY APS 252 power supply

    Abstract: 8 pin ic 9435A SONY APS 283 SONY APS 252 IRF 9460 SONY APS 254 SONY APS 283 power supply transformer 18-0-18 step down transformer 12-0-12 MPSA06 fairchild transistor
    Text: Power−Supply Cookbook Maxim Power Supply Cookbook Compiled: November 2010 Available at: http://www.maxim−ic.com/cookbook/ Maxim has developed power supplies for a wide range of applications. Choose the specifications that most closely meet your needs. Then view a circuit design, complete with schematic diagram and


    Original     		PDF CDRH6D28-100 MAX1701 100uF 100pF 560pF NDC632P QS03L 220uF SONY APS 252 power supply 8 pin ic 9435A SONY APS 283 SONY APS 252 IRF 9460 SONY APS 254 SONY APS 283 power supply transformer 18-0-18 step down transformer 12-0-12 MPSA06 fairchild transistor

    diode 6t6

    Abstract: NDC632P
    Text: National June 1996 Semiconductor" NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS


    OCR Scan     		PDF NDC632P Supe202 diode 6t6 NDC632P

    transistor 632p

    Abstract: 632p
    Text: F A I R C H I L D M ICDNDUCTQ R Junel 996 tm NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDC632P transistor 632p 632p

    Untitled

    Abstract: No abstract text available
    Text: Junel996 N NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T hese P-C hannel logic level e n h a n c e m e n t m o d e p o w er field effect transistors are p roduced using N ationals proprietary, high cell density, DMOS


    OCR Scan     		PDF Junel996 NDC632P

    NDC632P

    Abstract: No abstract text available
    Text: N Junel996 NDC632P P-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features T hese P-C hannel logic level en h an cem en t m ode po w er field effect transistors are produ ced using N ationals proprietary, high cell density, DMOS


    OCR Scan     		PDF Junel996 NDC632P NDC632P