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    NDC7001C Price and Stock

    onsemi NDC7001C

    MOSFET N/P-CH 60V 0.51A SSOT6
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    DigiKey NDC7001C Cut Tape 8,905 1
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    NDC7001C Digi-Reel 8,905 1
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    NDC7001C Reel 8,900 3,000
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    NDC7001C Ammo Pack 15 Weeks, 5 Days 1
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    Mouser Electronics NDC7001C 75,425
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    Verical NDC7001C 57,000 3,000
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    NDC7001C Cut Strips 7,728 18 Weeks 1
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    Newark NDC7001C Cut Tape 46,434 1
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    NDC7001C Reel 3,000
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    Onlinecomponents.com NDC7001C 57,000
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    Rochester Electronics NDC7001C 246 1
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    TME NDC7001C 1,260 1
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    Ameya Holding Limited NDC7001C 9,531
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    Richardson RFPD NDC7001C 6,000
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    Avnet Asia NDC7001C 18 Weeks 6,000
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    New Advantage Corporation NDC7001C 936,000 1
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    Aptina Imaging NDC7001C

    Trans MOSFET N/P-CH 60V 0.51A/0.34A 6-Pin TSOT-23 T/R
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    Verical NDC7001C 72,000 3,000
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    NDC7001C 39,000 3,000
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    NDC7001C 7,728 44
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    Microchip Technology Inc NDC7001C

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    Bristol Electronics NDC7001C 2,346
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    Fairchild Semiconductor Corporation NDC7001C

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    NDC7001C Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDC7001C Fairchild Semiconductor Dual N & P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDC7001C Fairchild Semiconductor Dual N & P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDC7001C Fairchild Semiconductor Dual N & P-Channel Enhancement Mode Field Effect T Original PDF
    NDC7001C Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDC7001C National Semiconductor Dual N & P-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDC7001C National Semiconductor Dual N & P-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDC7001C_NL Fairchild Semiconductor Dual N & P Channel Enhancement Mode Field Effect Transistor Original PDF

    NDC7001C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N & P-Channel Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to


    Original     		PDF NDC7001C

    Untitled

    Abstract: No abstract text available
    Text: March 1996 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDC7001C

    CBVK741B019

    Abstract: F63TNR FDC633N NDC7001C
    Text: March 1996 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDC7001C CBVK741B019 F63TNR FDC633N NDC7001C

    NDC7001C

    Abstract: siemens
    Text: N March 1996 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has


    Original     		PDF NDC7001C NDC7001C siemens

    NDC7001C

    Abstract: No abstract text available
    Text: NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N & P-Channel Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to


    Original     		PDF NDC7001C NDC7001C

    NDC7001C

    Abstract: No abstract text available
    Text: March 1996 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDC7001C NDC7001C

    Supersot6

    Abstract: Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN
    Text: Discrete MOSFET SuperSOT-6 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SuperSOT-6 N-Channel FDC6401N 20 Dual - 0.07 0.095 - 3.3 3 0.96 FDC6305N 20 Dual - 0.08 0.12 - 3.5


    Original     		PDF FDC6401N FDC6305N FDC637AN FDC6303N FDC6301N FDC6561AN FDC645N FDC638P FDC640P FDC642P Supersot6 Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN

    ATmega16hva

    Abstract: 2sb2012 P0R2202 NC7SZ57P6X SB200 NDC7001C wsl0805r0100 P0C1102
    Text: 1 2 _ _ Y = I0 •(I2) + (I1)•(I2) 3 4 5 Remove when using SB200 R24 P0R2402 PCB Edge-connector to SB200 VCC 19 17 P0J5015 15 P0J5013 13 P0J5011 11 P0J509 9 P0J507 7 P0J505 5 P0J503 3 P0J501 1 A C14 P0C1302 P0C1301 P0C1402 P0C1401 100n 20 P0J5020 18 P0J5018


    Original     		PDF SB200 P0R2402 P0J5015 P0J5013 P0J5011 P0J509 P0J507 P0J505 P0J503 ATmega16hva 2sb2012 P0R2202 NC7SZ57P6X SB200 NDC7001C wsl0805r0100 P0C1102

    P0R902

    Abstract: ATmega16hva P0C1002 P0R1702 NDC7001C P0R1401 P0R1402 P0R601 P0R101 ATmega16HVA-36CK1
    Text: 1 2 _ _ Y = I0 •(I2) + (I1)•(I2) 3 4 5 Remove when using SB200 R24 PCB Edge-connector to SB200 19 17 P0J5015 15 P0J5013 13 P0J5011 11 P0J509 9 P0J507 7 P0J505 5 P0J503 3 P0J501 1 C11 100n C12 P0C1102 P0C1101 P0C1202 P0C1201 100n 100n P0R601 10K 1 P0D101


    Original     		PDF SB200 P0J5015 P0J5013 P0J5011 P0J509 P0J507 P0J505 P0J503 P0J501 P0R902 ATmega16hva P0C1002 P0R1702 NDC7001C P0R1401 P0R1402 P0R601 P0R101 ATmega16HVA-36CK1

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    LIR2032

    Abstract: No abstract text available
    Text: LTC3331 Nanopower Buck-Boost DC/DC with Energy Harvesting Battery Charger DESCRIPTION FEATURES Dual Input, Single Output DC/DCs with Input Prioritizer Energy Harvesting Input: 3.0V to 19V Buck DC/DC Battery Input: Up to 4.2V Buck-Boost DC/DC n 10mA Shunt Battery Charger with Programmable


    Original     		PDF LTC3331 950nA QFN-32 450nA; LTC4071 LTC3129/ LTC3129-1 200mA MSOP-16E, LIR2032

    transistor L43 SMD

    Abstract: transistor NPN C124 samsung u2 cable smd diode L43 c124 npn transistor SMD t06 47 transistor SMD t08 transistor SMD t07 transistor t07 DIODE C136
    Text: This Document can not be used without Samsung’s authorization. 6 Docking Exploded View and Parts List 6-1 UNIT_DOCK_BOTTOM_ASSY Sens Q 20 6-1 6 Docking Exploded View and Parts List NO 6-2 PART NAME This Document can not be used without Samsung’s authorization.


    Original     		PDF BA61-00728A BA66-00044A BA66-00043A BA72-00679A BA72-00678A BA72-00663A BA72-00662A PGB0010603MR 100PF 220PF transistor L43 SMD transistor NPN C124 samsung u2 cable smd diode L43 c124 npn transistor SMD t06 47 transistor SMD t08 transistor SMD t07 transistor t07 DIODE C136

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    Untitled

    Abstract: No abstract text available
    Text: [N M a rc h 1 9 9 6 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-ehannel en h a n ce m e n t m ode pow er field effect transistors are produced using N ational's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDC7001C C7001C

    NDC7001C

    Abstract: VX25
    Text: National Semiconductor'" M arch 1 9 9 6 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using National’s proprietary, high cell density, DMOS


    OCR Scan     		PDF NDC7001C tS0113G Q03T7T3 NDC7001C VX25

    7001c

    Abstract: No abstract text available
    Text: F A IR C H IL D March 1996 SEMICONDUCTOR i NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-chanrtel enhancem ent mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF NDC7001C iJ111 7001c

    NDT453N

    Abstract: H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N
    Text: Discrete Power and Signal Technologies Fairchild S e m ic o n d u c to r Selection G uides Surface Mount Power MOSFETs Part Num ber v„s VI Max (ß ^DSfoN} 4.5V 10V In (A) 2.7V PD (W | Part Num ber Remarks | M ax ( fi) V « v „s IV) 10V 4.5V P, |W |


    OCR Scan     		PDF T-223 NDC631N FDC6303N" FDC6301N* NDC651N NDC7002N NDT455N NDT453N NDT451AN NDT451N H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N

    NDC7001C

    Abstract: No abstract text available
    Text: ÎN M arch 1 9 9 6 N D C7001C Dual N & P-Channel Enhancement M ode Field Effect Transistor General Description Features T hese dual N and P-ehannel en hancem en t m ode pow er field effect transistors are produced using N ational's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDC7001C g-11-â NDC7001C