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    onsemi NDS355AN

    MOSFET N-CH 30V 1.7A SUPERSOT3
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    DigiKey NDS355AN Cut Tape 17,990 1
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    NDS355AN Digi-Reel 17,990 1
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    NDS355AN Reel 15,000 3,000
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    Rochester Electronics NDS355AN 43,455 1
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    TME NDS355AN 2,858 3
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    onsemi NDS355N

    MOSFET N-CH 30V 1.6A SUPERSOT3
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    onsemi NDS355AN_G

    MOSFET N-CH 30V 1.7A SUPERSOT3
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    onsemi NDS355AN-F169

    MOSFET N-CH 30V 1.7A SOT23-3
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    DigiKey NDS355AN-F169 Tray
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    MOSLEADER NDS355N-NL-ML

    N-Channel 30V 1.6A SOT-23-3
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    DigiKey NDS355N-NL-ML Reel 200
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    Find more NDS355 price and stock on Findchips.com

    NDS355 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDS355 Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDS355AN Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDS355AN Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDS355AN National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDS355AN National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDS355AN Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS355AN National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDS355AN-F169 onsemi MOSFET N-CH 30V 1.7A SOT23-3 Original PDF
    NDS355AN-NB9L007A Fairchild Semiconductor NDS355AN - N-CHANNEL LOGIC LEVEL Original PDF
    NDS355AN-NB9L007A onsemi MOSFET N-CH 30V 1.7A SOT23-3 Original PDF
    NDS355AN_NL Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDS355N Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDS355N Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDS355N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS355N Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDS355N National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDS355N_NL Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transisitor Original PDF

    NDS355 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: March 1996 NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDS355N

    Untitled

    Abstract: No abstract text available
    Text: January 1997 NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high


    Original     		PDF NDS355AN

    NDS355N

    Abstract: No abstract text available
    Text: March 1996 NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDS355N NDS355N

    NDS355AN

    Abstract: No abstract text available
    Text: January 1997 NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high


    Original     		PDF NDS355AN NDS355AN

    NDS355AN

    Abstract: No abstract text available
    Text: N January 1997 NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 1.7A, 30 V, RDS ON = 0.125 Ω @ VGS = 4.5 V RDS(ON) = 0.085 Ω @ VGS = 10 V. SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced


    Original     		PDF NDS355AN NDS355AN

    NDS355N

    Abstract: No abstract text available
    Text: N March 1996 NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS355N NDS355N

    NDS355AN

    Abstract: No abstract text available
    Text: January 1997 NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high


    Original     		PDF NDS355AN NDS355AN

    NDS355AN

    Abstract: No abstract text available
    Text: N September 1996 NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 1.7A, 30 V, RDS ON = 0.125 Ω @ VGS = 4.5 V RDS(ON) = 0.085Ω @ VGS = 10 V. SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced


    Original     		PDF NDS355AN NDS355AN

    NDS355N

    Abstract: No abstract text available
    Text: March 1996 NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDS355N NDS355N

    Untitled

    Abstract: No abstract text available
    Text: TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 2.7-W CONSTANT OUTPUT POWER CLASS-D AUDIO AMPLIFIER WITH INTEGRATED BOOST CONVERTER FEATURES APPLICATIONS • • • • • 1 • • • • • • • • • • • High Efficiency Integrated Boost Converter


    Original     		PDF TPA2013D1 SLOS520

    Untitled

    Abstract: No abstract text available
    Text: TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 2.7-W CONSTANT OUTPUT POWER CLASS-D AUDIO AMPLIFIER WITH INTEGRATED BOOST CONVERTER FEATURES APPLICATIONS • • • • • 1 • • • • • • • • • • • High Efficiency Integrated Boost Converter


    Original     		PDF TPA2013D1 SLOS520 16-ball 20-Lead

    Untitled

    Abstract: No abstract text available
    Text: 120-2012-000 EMBER EM35 X NCP BREAKOUT BOARD TECHNICAL SPECIFICATION The Silicon Labs’ Ember EM35x Network Co-Processor NCP Breakout Board contains the hardware peripherals for the development and deployment of a low-data-rate, low-power ZigBee application on a host micro interfacing


    Original     		PDF EM35x EM300

    Untitled

    Abstract: No abstract text available
    Text: SC1410A Constant Voltage/Constant Current Battery Charger POWER MANAGEMENT Description Features The SC1410A is designed to provide a simple, fast charging solution for rechargeable batteries that require constant-current and/or constant voltage charging, including


    Original     		PDF SC1410A 500kHz

    CPH3106

    Abstract: CPH3206 CPH3303 LQFP-48P MB3883 NDS355AN VT100
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27225-2E ASSP For Power Management Applications 6-ch DC/DC Converter IC with Synchronous Rectifier for Voltage Step-up and Step-down MB3883 • DESCRIPTION The MB3883 is a 6-channel step-up/step-down DC/DC converter IC using pulse width modulation PWM and


    Original     		PDF DS04-27225-2E MB3883 MB3883 LQFP-48P BCC-48P CPH3106 CPH3206 CPH3303 NDS355AN VT100

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27225-4E ASSP For Power Management Applications 6-ch DC/DC Converter IC with Synchronous Rectifier for Voltage Step-up and Step-down MB3883 • DESCRIPTION The MB3883 is a 6-channel step-up/step-down DC/DC converter IC using pulse width modulation PWM and


    Original     		PDF DS04-27225-4E MB3883 MB3883 LQFP-48P BCC-48P

    Untitled

    Abstract: No abstract text available
    Text: TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 2.7-W CONSTANT OUTPUT POWER CLASS-D AUDIO AMPLIFIER WITH INTEGRATED BOOST CONVERTER FEATURES APPLICATIONS • • • • • 1 • • • • • • • • • • • High Efficiency Integrated Boost Converter


    Original     		PDF TPA2013D1 SLOS520

    G003

    Abstract: TPA2013D1 TPA2013D1RGP TPA2013D1RGPR TPA2013D1YZH
    Text: TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 2.7-W CONSTANT OUTPUT POWER CLASS-D AUDIO AMPLIFIER WITH INTEGRATED BOOST CONVERTER FEATURES APPLICATIONS • • • • • 1 • • • • • • • • • • • High Efficiency Integrated Boost Converter


    Original     		PDF TPA2013D1 SLOS520 G003 TPA2013D1 TPA2013D1RGP TPA2013D1RGPR TPA2013D1YZH

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-27225-4Ea ASSP For Power Management Applications 6-ch DC/DC Converter IC with Synchronous Rectifier for Voltage Step-up and Step-down MB3883 • DESCRIPTION The MB3883 is a 6-channel step-up/step-down DC/DC converter IC using pulse width modulation PWM and


    Original     		PDF DS04-27225-4Ea MB3883 MB3883 LQFP-48P BCC-48P

    Untitled

    Abstract: No abstract text available
    Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: March 1996 F A IR C H IL D SEM IC ONDUCTO R tm NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF NDS355N NDS355N

    NDS355N

    Abstract: No abstract text available
    Text: March 1996 FAIRCHILD MICDNDUCTDR t m NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF NDS355N

    diode T35

    Abstract: NDS355N diode T35 -4-D6
    Text: & National Semiconductor M a rc h 1 9 9 6 " NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel lo g ic level enhancem ent m ode p o w e r fie ld effect tran sisto rs are produced using N ationals pro p rie ta ry, high cell density, DMOS


    OCR Scan     		PDF NDS355N OT-23) b501130 bSG1130 diode T35 NDS355N diode T35 -4-D6

    Untitled

    Abstract: No abstract text available
    Text: January 1997 PAIRCHII-D iMICDNDUCTQR t m NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description S u p erS O T -3 N -C h a n n e l Features logic level enhancem ent m ode 1 .7 A , 3 0 V , R,DS ON p o w e r field e ffec t transistors a re prod uced using Fairchild's


    OCR Scan     		PDF NDS355AN S355A

    Untitled

    Abstract: No abstract text available
    Text: March 1996 PAIRCHII-D M ICDNDUCTQ R tm NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF NDS355N