11W60C3
Abstract: No abstract text available
Text: PowerMOSFET OUTLI NE FP11W60C3 Uni tmm Package I TO3P 5.5 15 ロット記号 （例） Date code 600V11A 22 管理番号 （例） Control No. 品名 Type No. 0000 11W60C3 Feat ur e 18.0 LowRON Fas tSwi t chi ng I s ol at edPackage ① ② ①: G ②:D ③: S
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11W60C3
11W60C3
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Untitled
Abstract: No abstract text available
Text: PowerMOSFET OUTLI NE FP20W60C3 Uni tmm Package I TO3P 5.5 15 ロット記号 （例） Date code 600V20A 22 管理番号 （例） Control No. 品名 Type No. 0000 P20W60C3 Feat ur e 18.0 LowRON Fas tSwi t chi ng I s ol at edPackage ① ② ①: G ②:D ③: S
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P20W60C3
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p20w60
Abstract: P20W60C3 P20W
Text: PowerMOSFET •外観図 FP20W60C3 OUTLI NE Package：I TO3P 5.5 15 ロット記号 （例） Date code 600V20A t ：mm Uni 煙低オン抵抗 煙高速スイッチング 煙絶縁タイプ 22 管理番号 （例） Control No. 特 長 品名 Type No. 0000
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P20W60C3
p20w60
P20W60C3
P20W
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11W60C3
Abstract: 11w60 s01z
Text: PowerMOSFET •外観図 FP11W60C3 OUTLI NE Package：I TO3P 5.5 15 ロット記号 （例） Date code 600V11A t ：mm Uni 煙低オン抵抗 煙高速スイッチング 煙絶縁タイプ 22 管理番号 （例） Control No. 特 長 品名 Type No. 0000
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11W60C3
11W60C3
11w60
s01z
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Untitled
Abstract: No abstract text available
Text: FS4422-DS-13_EN NOV 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.3 Datasheet FS4422 Single N-Channel Enhancement Mode Power MOSFET FS4422 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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FS4422-DS-13
FS4422
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k3995
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power er MOSFETs 2SK3995 Silicon N-channel enhancement MOSFET For high speed switching circuits For PDP • Package Medium breakdown voltag: VDSS = 200 V, ID = 30 A Low ON resistance, optimum for PDP panel drive
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2002/95/EC)
2SK3995
O-220C-G1
K3995
k3995
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SiC714CD10
Abstract: No abstract text available
Text: Product is End of Life 3/2014 SiC714CD10 Vishay Siliconix Fast Switching MOSFETs With Integrated Driver FEATURES PRODUCT SUMMARY Input Voltage Range 3.3 to 15 V Output Voltage Range 0.5 to 6 V Operating Frequency 100 kHz to 1 MHz Continuous Output Current
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SiC714CD10
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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800-1200MHZ
Abstract: operational amplifier discrete schematic printed spiral antenna VHF lna with agc NE625 SR00089 10GHz VCO
Text: Philips Semiconductors Product specification 1GHz LNA and mixer NE/SA600 AC ELECTRICAL CHARACTERISTICS1,2 SYMBOL PARAMETER TEST CONDITIONS LIMITS –3σ TYP +3σ UNITS LNA VCC = VCCMX = +5V, TA = 25°C; Enable = Hi, Test Figure 1, unless otherwise stated.
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NE/SA600
S21/T
S21/f
900MHz
800MHz
800-1200MHZ
operational amplifier discrete schematic
printed spiral antenna
VHF lna with agc
NE625
SR00089
10GHz VCO
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1316D
Abstract: VHF lna with agc GSM LNA NE600D SA600D vco fm 100mhz to 1ghz
Text: Philips Semiconductors Product specification 1GHz LNA and mixer NE/SA600 DESCRIPTION PIN CONFIGURATION The NE/SA600 is a combined low noise amplifier LNA and mixer designed for high-performance low-power communication systems from 800-1200MHz. The low-noise preamplifier has a 2dB noise
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NE/SA600
NE/SA600
800-1200MHz.
900MHz
-10dBm
900MHz.
SR00096
SR00097
1316D
VHF lna with agc
GSM LNA
NE600D
SA600D
vco fm 100mhz to 1ghz
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CAPACITOR 10UF THROUGH HOLE
Abstract: ne10
Text: FEATURES High Efficiency: 94.0% @ 12Vin, 5V/10A out Size: Vertical : 10.4mm x 16.5mm x 11.0 mm 0.41” x 0.65” × 0.43” Horizontal : 10.4mm x 16.5mm x 11.5 mm (0.41” × 0.65” × 0.45”) Wide input range: 3.0V~13.8V Output voltage programmable from
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12Vin,
V/10A
59Vdc
QS9000,
OHSAS18001
EN60950)
10Aout
NE12S10A
CAPACITOR 10UF THROUGH HOLE
ne10
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Untitled
Abstract: No abstract text available
Text: FEATURES High Efficiency: 94.0% @ 12Vin, 5V/20A out Size: Vertical: 30.5x15.5x12.0mm 1.20”x0.61”x0.47” Horizontal: 30.5x15.5x12.5mm (1.20”x0.61”x0.49”) Wide input range: 4.5V~13.8V Output voltage programmable from 0.59Vdc to 5.1Vdc via external resistors
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12Vin,
V/20A
59Vdc
QS9000,
OHSAS18001
EN60950)
NE12S20A
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Rechargeable BATTERY AA 1.5V
Abstract: No abstract text available
Text: AOZ9004B Single-Cell Battery Protection IC with Integrated MOSFET General Description Features The AOZ9004B is a battery protection IC with integrated dual common-drain N-channel MOSFET. The device includes accurate voltage detectors and delay circuits, and is suitable for protecting single-cell lithium-ion / lithium-polymer rechargeable
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AOZ9004B
AOZ9004B
300mm
500mm
Z9004B
Rechargeable BATTERY AA 1.5V
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Untitled
Abstract: No abstract text available
Text: Voltage Regulators AN30210A Power supply control IC for a digital still camera • Overview Unit: mm 9.00±0.20 7.00±0.20 48 33 32 1.00 0.15 0° to10° 0.50±0.25 LQFP064-P-0707 Note) The package of this product will be changed to lead-free type (LQFP064-P-0707B). See the
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AN30210A
AN30210A
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Untitled
Abstract: No abstract text available
Text: STB22NE03L N - CHANNEL 30V - 0.034£2 - 22A TO-263 _ STripFET POWER MOSFET P R ELIM IN ARY DATA TYPE STB22N E03L V dss RDS on Id 30 V < 0 .0 5 Q. 22 A . . . . . TYPICAL R D S (on) = 0.034 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED
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STB22NE03L
O-263
STB22N
P011P6/E
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TR40-10
Abstract: SA SOT-23 MARKING CODE 028a sot 23 Q62702-SS12
Text: BEE D • û23b32G 0017155 5 « S I P SIPMOS N Channel MOSFET SIEMEN S/ SPCL-, SEMICONDS t * " 3 S *- 2S " BSS123 _ ~_ • SIPMOS - enhancement mode • Draln-source voltage Vf>« = 100V • Continuous drain current I o - 0.17A • Draln-source on-reslstance
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23b32G
BSS123
Q62702-SS12
OQ171bO
TR40-10
SA SOT-23
MARKING CODE 028a sot 23
Q62702-SS12
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CA3080T
Abstract: ed 3b diod a 3140 12 diod full wave bridge rectifier ic BA 10B FULL WAVE RECTIFIER a3140 CA3130 ica ca3130 ca 3140a a3140 equivalent
Text: CA3140, CA3140A Semiconductor September 1998 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output The CA3140A and CA3140 are integrated circuit operational am plifiers that com bine the advantages of high voltage PM O S transistors with high voltage bipolar transistors on a single
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CA3140,
CA3140A
CA3140A
CA3140
CA3080T
ed 3b diod
a 3140
12 diod full wave bridge rectifier ic
BA 10B FULL WAVE RECTIFIER
a3140
CA3130
ica ca3130
ca 3140a
a3140 equivalent
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FZH 191
Abstract: FZJ 101 FZH 261 fzh 111 fzh 171 FZH111 FZH 101 FZH 161 fzh 141 fzh 281
Text: Elektronik. Wir bauen die Elemente. • VflLVO Professionelle Integrierte Schaltungen, Mikroprozessoren Produktprogramm Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die M ikroelektronik - entwickelt sich im m er rascher zum M otor für eine
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Integrie8510.
FZH 191
FZJ 101
FZH 261
fzh 111
fzh 171
FZH111
FZH 101
FZH 161
fzh 141
fzh 281
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k408
Abstract: No abstract text available
Text: _ SÌ6562DQ Vishay Siliconix N- and P-Channel 2.5-V G-S MOSFET lü U U im M y K V o s *vj N -Ch an n el R D8(ON> P I Id (A) 0.030 @ V GS = 4.5 V ± 4.5 0.040 V GS = 2.5 V ± 3.9 20 P-C ha n ne i 0.050 @ V Gs = -4 .5 V ± 3.5
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6562DQ
6562DQ_
S-56944--
23-Nov-98
k408
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PDF
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Untitled
Abstract: No abstract text available
Text: Zjï SGS-THOMSON ¡ILIOTI^OKinei STP22NE03L N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE " POWER MOSFET TYPE STP22NE03L . . . . . V dss R dS oii Id 30 V < 0.05 Q. 22 A TYPICAL RDs(on) = 0.034 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 °C
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STP22NE03L
O-220
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Untitled
Abstract: No abstract text available
Text: APT40M70JVR • R A dvanced W 'æ p o w e r Te c h n o l o g y ' 400v 53a 0.070q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT40M70JVR
OT-227
E145592
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IRLRU120N
Abstract: b0350 IRL520
Text: PD - 9.1541 A International IQ R Rectifier IRLR/U120N PRELIMINARY HEXFET Power MOSFET • Surface Mount IRLR120N • Straight Lead (IRLU120N) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated V dss = 100V R ü S (o n ) = 0 . 1 8 5 H
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IRLR120N)
IRLU120N)
IRLR/U120N
IRLRU120N
b0350
IRL520
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PDF
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Untitled
Abstract: No abstract text available
Text: APT8056BVR A dvanced P ow er Te c h n o l o g y ' 800V 16A 0.560Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT8056BVR
O-247
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802R4BN
Abstract: 752r 802R4 APT752R4BN APT752R8BN APT802R4BN APT802R8BN
Text: A D V A N C ED PO W ER Te c h n o l o g y O D APT802R4BN APT752R4BN APT802R8BN APT752R8BN O S POWER MOS IVe 800V 750V 800V 750V 5.5A 5.5A 5.0A 5.0A 2.40Q 2.40Q 2.80Q 2.80Í2 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tr = 25°C unless otherwise specified.
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APT802R4BN
APT752R4BN
APT802R8BN
APT752R8BN
752R4BN
802R4BN
752R8BN
802R8BN
O-247AD
752r
802R4
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PDF
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STB55NE06 N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE ” POWER MOSFET TYP E V S TB55N E06 dss 60 V R d S ( o ii) Id < 0.0 22 Q. 55 A . . TYPICAL Ros(on) =0.019 £2 EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED
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STB55NE06
TB55N
O-263
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