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ne3512s02 s2p Abstract: NE3512S02 NE3512 lnb ku-band NE3512S02-T1C-A NE3512S02-T1D NE3512S02-T1D-A HS350 NE3512S02-T1C NE3512S02-T1 Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package	Original	PDF	NE3512S02 NE3512S02-T1C NE3512S02-T1C-A NE3512S02-T1D NE3512S02-T1D-A ne3512s02 s2p NE3512S02 NE3512 lnb ku-band NE3512S02-T1C-A NE3512S02-T1D NE3512S02-T1D-A HS350 NE3512S02-T1C NE3512S02-T1
NE3512S02-T1D-A and s2p Abstract: rt/duroid 5880 NE3512 NE3512S02-T1C ne3512s02 s2p d marking Micro-X maximum gain s2p NE3512S02-T1C-A NE3512S02-T1D-A HS350 Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package APPLICATIONS	Original	PDF	NE3512S02 NE3512S02-T1C NE3512S02-T1C-A NE3512S02-T1D NE3512S02-T1D-A NE3512S02-T1D-A and s2p rt/duroid 5880 NE3512 NE3512S02-T1C ne3512s02 s2p d marking Micro-X maximum gain s2p NE3512S02-T1C-A NE3512S02-T1D-A HS350
NE3512S02 Abstract: RT DUROID 5880 HS350 NE3512S02-T1C NE3512S02-T1C-A NE3512S02-T1D NE3512S02-T1D-A ir260 NE3512S0 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	NE3512S02 NE3512S02-T1C NE3512S02-T1C-A NE3512S02-T1D NE3512S02-T1D-A PG10592JJ01V0DS IR260 HS350 NE3512S02 RT DUROID 5880 HS350 NE3512S02-T1C NE3512S02-T1C-A NE3512S02-T1D NE3512S02-T1D-A ir260 NE3512S0
ne3512s02 s2p Abstract: gaas fet micro-X Package NE3512S02-T1D-A NE3512S02-T1D-A and s2p rogers 5880 HS350 NE3512S02 NE3512S02-T1C NE3512S02-T1C-A NE3512S02-T1D Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
ne3511s02 s2p Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan	Original	PDF	07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
SMD M05 sot Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial	Original	PDF	08/2M SMD M05 sot NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters