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    NE5520379A-T1 Search Results

    NE5520379A-T1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    FIDO5100BBCZ Analog Devices REM Switch Visit Analog Devices Buy
    FIDO5200CBCZ Analog Devices REM Switch with EtherCAT Visit Analog Devices Buy
    ADIN1300CCPZ Analog Devices Industrial Ethernet Gigabit PH Visit Analog Devices Buy
    ADIN1200BCP32Z Analog Devices Industrial Ethernet 10 100 PHY Visit Analog Devices Buy
    FIDO5110CBCZ Analog Devices REM Switch Software enabled Visit Analog Devices Buy
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    NE5520379A-T1 Price and Stock

    California Eastern Laboratories (CEL) NE5520379A-T1A-A

    RF MOSFET LDMOS 3.2V 79A
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    DigiKey NE5520379A-T1A-A Cut Tape
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    Renesas Electronics Corporation NE5520379AT1A

    3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA NE5520379AT1A 13,000
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    NE5520379A-T1 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE5520379A-T1 NEC 3.2 V Operation Silicon RF Power LDMOS FET for GSM/DCS Dual-Band Phone Transmission Amplifiers Original PDF
    NE5520379A-T1A California Eastern Laboratories 3.2 V 3 W L&s Band Medium Power Silicon LD-MOSFET(261) Original PDF
    NE5520379A-T1A California Eastern Laboratories Transistor - Datasheet Reference Original PDF
    NE5520379A-T1A NEC 3.2 V Operation Silicon RF Power LDMOS FET for GSM/DCS Dual-Band Phone Transmission Amplifiers Original PDF
    NE5520379A-T1A NEC NECs 3.2 V, 3 W, L/S band medium power silicon LD-MOSFET. Original PDF
    NE5520379A-T1A-A California Eastern Laboratories NECs 3.2v 3w L/s Band Medium Power Silicon Ld-mosfet Original PDF