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    NE55410GR Price and Stock

    Rochester Electronics LLC NE55410GR-T3-AZ

    RF MOSFET LDMOS 28V 16HTSSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NE55410GR-T3-AZ Bulk 30,892 58
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    California Eastern Laboratories (CEL) NE55410GR-AZ

    RF MOSFET LDMOS 28V 16HTSSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
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    California Eastern Laboratories (CEL) NE55410GR-T3-AZ

    RF MOSFET LDMOS 28V 16HTSSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NE55410GR-T3-AZ Reel
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    Renesas Electronics Corporation NE55410GR-T3-AZ

    NE55410GR - RF Power Field-Effect Transistor, 2-Element, S Band, N-Channel MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics NE55410GR-T3-AZ 30,892 1
    • 1 $5.27
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    • 100 $4.95
    • 1000 $4.48
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    NE55410GR Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE55410GR California Eastern Laboratories N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER Original PDF
    NE55410GR California Eastern Laboratories N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER Original PDF
    NE55410GR-AZ California Eastern Laboratories RF FETs, Discrete Semiconductor Products, MOSFET LD N-CHAN 28V 16-HTSSOP Original PDF
    NE55410GR-T3-AZ California Eastern Laboratories N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER Original PDF
    NE55410GR-T3-AZ California Eastern Laboratories RF FETs, Discrete Semiconductor Products, MOSFET LD N-CHAN 28V 16-HTSSOP Original PDF

    NE55410GR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE5511279A

    Abstract: NE5520279A NE5520379A NE552R479A NE55410GR 25VVGS
    Text: NEC Silicon LD-MOS FETs www.cel.com Silicon LD-MOSFETs Typical Specifications @ TC = 25°C Part Number POUT dBm TYP NE552R479A NE5511279A NE5520279A NE5520379A NE55410GR 26.0 11 40.0 32.0 35.5 33.0 40.4 VDS (V) IDSQ (mA) Package Code 19 3.0 200 79A 0.9 27


    Original     		PDF NE552R479A NE5511279A NE5520279A NE5520379A NE55410GR NE5511279A NE5520279A NE5520379A NE552R479A NE55410GR 25VVGS

    ldmos nec

    Abstract: No abstract text available
    Text: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different


    Original     		PDF NE55410GR NE55410GR ldmos nec

    NE55410GR-T3-AZ

    Abstract: TL15 NE55410GR NE55410 ldmos nec
    Text: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different


    Original     		PDF NE55410GR NE55410GR NE55410GR-T3-AZ TL15 NE55410 ldmos nec

    ne554

    Abstract: NE55410GR NE55410GR-T3-AZ TL12 TL13 TL15
    Text: LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different


    Original     		PDF NE55410GR NE55410GR ne554 NE55410GR-T3-AZ TL12 TL13 TL15

    ldmos nec

    Abstract: No abstract text available
    Text: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different


    Original     		PDF NE55410GR NE55410GR ldmos nec

    Untitled

    Abstract: No abstract text available
    Text: LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different


    Original     		PDF NE55410GR NE55410GR PU10542EJ02V0DS IR260 WS260 HS350

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


    Original     		PDF 07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N

    transistor marking T79 ghz

    Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority


    Original     		PDF PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book

    ic isl 887

    Abstract: 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03
    Text: RF & マイクロ波デバイス システムブロック www.renesas.com 2010.04 目 次 1. はじめに •··········································································································································· 3


    Original     		PDF PA86x PG2158T5K PC3218T5Y NES1823M-45, NES1823M-180, NES1823M-240, NES1823S-45, NES1823S-90 R09CA0001JJ0100 PX10020JJ42V0PF ic isl 887 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03

    mc10087f1

    Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
    Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.


    Original     		PDF IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059

    TL15

    Abstract: NE55410GR NE55410GR-T3-AZ TL12 TL13 5503 GM ldmos nec S6575
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF NE55410GR PU10542JJ03V0DS IR260 WS260 HS350 M8E02 TL15 NE55410GR NE55410GR-T3-AZ TL12 TL13 5503 GM ldmos nec S6575

    GSM based home appliance control circuit diagram

    Abstract: NE55410GR NE55410GR-T3-AZ TL12 TL13 TL15
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    UPC8236

    Abstract: 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ39V0PF UPC8236 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic

    SMD M05 sot

    Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
    Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial


    Original     		PDF 08/2M SMD M05 sot NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters

    UPC8236

    Abstract: 2SC5508 2SC3357/NE85634 CATV MODULATOR NE5510279A upg2406t6r Microwave GaAs FET catalogue NE3515S02 NE662M04 NE3514S02
    Text: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.04 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4


    Original     		PDF R09CA0001EJ0100 PX10020EJ42V0PF UPC8236 2SC5508 2SC3357/NE85634 CATV MODULATOR NE5510279A upg2406t6r Microwave GaAs FET catalogue NE3515S02 NE662M04 NE3514S02

    2SC5508

    Abstract: UPC3243 UPC8236 NE3509 NE3517S03 transistor 20107 800 Mhz Cordless Phone circuit diagram NESG270034 2SC4226 APPLICATION NOTES NE5510279A
    Text: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.10 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4


    Original     		PDF R09CA0001EJ0300 2SC5508 UPC3243 UPC8236 NE3509 NE3517S03 transistor 20107 800 Mhz Cordless Phone circuit diagram NESG270034 2SC4226 APPLICATION NOTES NE5510279A