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    NE6510179A Price and Stock

    California Eastern Laboratories (CEL) NE6510179A-A

    RF MOSFET GAAS HJ-FET 3.5V 79A
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    DigiKey NE6510179A-A Bulk
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    California Eastern Laboratories (CEL) NE6510179A-T1-A

    RF MOSFET GAAS HJ-FET 3.5V 79A
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    DigiKey NE6510179A-T1-A Reel
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    California Eastern Laboratories (CEL) NE6510179A-EVPW24

    EVAL BOARD NE6510179A 2.4GHZ
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    NEC Electronics Group NE6510179A-T1-A

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    Bristol Electronics NE6510179A-T1-A 125
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    Quest Components NE6510179A-T1-A 100
    • 1 $10.206
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    Component Electronics, Inc NE6510179A-T1-A 4
    • 1 $8.46
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    NEC Electronics Group NE6510179A-EVPW24

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    Quest Components NE6510179A-EVPW24 9
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    NE6510179A Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE6510179A California Eastern Laboratories NECs 3W L&S-BAND MEDIUM POWER GaAs HJ-FET Original PDF
    NE6510179A NEC 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET Original PDF
    NE6510179A NEC Semiconductor Selection Guide Original PDF
    NE6510179A NEC 1 W L-BAND POWER GaAs HJ-FET Original PDF
    NE6510179A NEC 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET Scan PDF
    NE6510179A-A NEC TRANS JFET N-CH 8V 720MA BULK Original PDF
    NE6510179A-EVPW19 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE6510179A 1.9GHZ Original PDF
    NE6510179A-EVPW24 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE6510179A 2.4GHZ Original PDF
    NE6510179A-EVPW26 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE6510179A 2.6GHZ Original PDF
    NE6510179A-EVPW35 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE6510179A 3.5GHZ Original PDF
    NE6510179A-T1 California Eastern Laboratories NECs 3W L&S-BAND MEDIUM POWER GaAs HJ-FET Original PDF
    NE6510179A-T1 NEC 1 W L-BAND POWER GaAs HJ-FET Original PDF
    NE6510179A-T1 NEC 1 W L-Band Power GaAs HJ-FET Original PDF
    NE6510179A-T1 NEC 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET Scan PDF
    NE6510179A-T1-A California Eastern Laboratories RF FETs, Discrete Semiconductor Products, HJ-FET GAAS 1.9GHZ 1W 79A Original PDF
    NE6510179A-T1-AZ NEC FET Transistor: 1W L-BAND POWER GaAs HJ-FET: Tape And Reel Original PDF

    NE6510179A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1E-16

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE6510179A SCHEMATIC Q1 RDX 0.2 ohms LGX LG 0.001 nH 0.75 nH LD 0.65 nH LDX 0.01 nH DRAIN RDBX 400 ohms GATE CDS PKG 0.1 pF CBSX 100 pF CGS PKG 0.1 pF RSX 0.05 ohms LSX 0.001 nH SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1


    Original     		PDF NE6510179A 1e-16 10e-12 5e-12 20e-12 4e-12 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: POUT = +31.5 dBm TYP at VDS = 3.5 V, f = 900 MHz POUT = +32.5 dBm TYP at VDS = 3.5 V, f = 1900 MHz


    Original     		PDF NE6510179A 24-Hour

    NE6510179A

    Abstract: NE6510179A-T1
    Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 1 W of output power CW with high linear


    Original     		PDF NE6510179A NE6510179A NE6510179A-T1

    NE6510179A

    Abstract: No abstract text available
    Text: 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: POUT = +31.5 dBm TYP at VDS = 3.5 V, f = 900 MHz POUT = +32.5 dBm TYP at VDS = 3.5 V, f = 1900 MHz


    Original     		PDF NE6510179A 24-Hour

    NE6510179A

    Abstract: No abstract text available
    Text: 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,


    Original     		PDF NE6510179A IMT-2000, 24-Hour

    MCR03J

    Abstract: IMT-2000 NE6510179A NE6510179A-A 100A4R7CP150X AF127 IC 13700 NE6510179AT1A
    Text: NEC's 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,


    Original     		PDF NE6510179A IMT-2000, MCR03J IMT-2000 NE6510179A NE6510179A-A 100A4R7CP150X AF127 IC 13700 NE6510179AT1A

    NE6510179A

    Abstract: No abstract text available
    Text: 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • HIGH OUTPUT POWER: POUT = +31.5 dBm TYP at VDS = 3.5 V, f = 900 MHz POUT = +32.5 dBm TYP at VDS = 3.5 V, f = 1900 MHz


    Original     		PDF NE6510179A 24-Hour

    nec 772

    Abstract: NE6510179A NE6510179A-T1
    Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 1 W of output power CW with high linear


    Original     		PDF NE6510179A NE6510179A nec 772 NE6510179A-T1

    NE6510179A

    Abstract: NE65 ms 16881
    Text: 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,


    Original     		PDF NE6510179A IMT-2000, 24-Hour NE65 ms 16881

    NE6510179A

    Abstract: NE650103M NE651R479A
    Text: NEC Discrete Power Devices www.cel.com GaAs Driver Devices Typical Specifications @ TC = 25°C Power & Gain Frequency Linear Range P1dB POUT PIN Gain GHz (dBm) (dBm) (dBm) (dB) Part Number NE651R479A 0.8 to 3.7 — NE6510179A 0.8 to 3.7 — NE650103M 0.8 to 2.7


    Original     		PDF NE651R479A NE6510179A NE650103M NE6510179A NE650103M NE651R479A

    NE6510179A

    Abstract: NE6510179A-T1
    Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 1 watt of output power CW with high linear


    Original     		PDF NE6510179A NE6510179A NE6510179A-T1

    NE6510179A

    Abstract: No abstract text available
    Text: NEC's 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,


    Original     		PDF NE6510179A IMT-2000,

    NE6510179A

    Abstract: No abstract text available
    Text: 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • HIGH OUTPUT POWER: POUT = +31.5 dBm TYP at VDS = 3.5 V, f = 900 MHz POUT = +32.5 dBm TYP at VDS = 3.5 V, f = 1900 MHz


    Original     		PDF NE6510179A 24-Hour

    NEC k 1760

    Abstract: NE6510179A California Eastern Laboratories OR NEC NE6510179A-T1 ne651
    Text: PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER NE6510179A GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +31.5 dBm TYP @ VDS = 3.5 V, IDSQ = 150 mA, f = 850 MHz, Pin = +20 dBm


    Original     		PDF NE6510179A 200ure NE6510179A-T1 24-Hour NEC k 1760 NE6510179A California Eastern Laboratories OR NEC NE6510179A-T1 ne651

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711

    NEC k 1760

    Abstract: NE6510179A
    Text: PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET OUTLINE DIMENSIONS FEATURES NE6510179A Units in mm LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A HIGH OUTPUT POWER: +31.5 dBm TYP @ V d s = 3.5 V, Id s q = 150 mA, f = 850 MHz, Pin = +20 dBm


    OCR Scan     		PDF NE6510179A NE6510179A-T1 24-Hour NEC k 1760 NE6510179A

    a 1232 nec

    Abstract: NE6510179A nec 1565 NEC TANTALUM
    Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1YV GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 1 watt of output power CW with high linear gain, high efficiency


    OCR Scan     		PDF NE6510179A NE6510179A a 1232 nec nec 1565 NEC TANTALUM

    NE6510179A

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS NE6510179A Units in mm LOW COST PLASTIC SURFACE MOUNT PACKAGE HIGH OUTPUT POWER: +31.5 dBm TYP @ Vds = 3.5 V, Idsq = 150 mA, 1 = 850 MHz, Pin = +20 dBm +32.0 dBm TYP @ V ds = 3.2 V, Idsq = 200 mA,


    OCR Scan     		PDF NE6510179A NE6510179A-T1 NE6510179A

    NE6510179A

    Abstract: hjfet
    Text: PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET OUTLINE DIMENSIONS FEATURES NE6510179A Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER:+31.5 dBm TYP @ Vds = 3.5 V, Idsq = 150 mA, f = 850 MHz, Pin = +20 dBm


    OCR Scan     		PDF NE6510179A NE6510179A hjfet

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ N-CHANNEL GaAs HJ-FET N E 6 5 1 1 7 9 A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 1 watt of output power CW with high linear gain, high efficiency


    OCR Scan     		PDF NE6510179A NE6510179A

    GRM40X7R104K025BL

    Abstract: IC 14553 PT 1017 T5.5 murata NE6510179A NE6510179A-T1 ma 17393 atc 11
    Text: 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET OUTLINE DIMENSIONS FEATURES_ • LOW COST PLASTIC SURFACE MOUNT PACKAGE NE6510179A NCDO lu 1 Units in mm PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: P o u t = + 31.5 dBm T Y P at V ds = 3.5 V, f = 900 MHz


    OCR Scan     		PDF NE6510179A 24-Hour GRM40X7R104K025BL IC 14553 PT 1017 T5.5 murata NE6510179A NE6510179A-T1 ma 17393 atc 11

    x 1535 ce

    Abstract: 0537
    Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The N E 651R 479A .is a 0.4 W G a A s HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power CW with high linear gain, high


    OCR Scan     		PDF NE651R479A NE6510179A NE6510379A. x 1535 ce 0537