Untitled
Abstract: No abstract text available
Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 3 24 • HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz 2.5 21 Noise Figure, NF dB • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µm • EPITAXIAL TECHNOLOGY • LOW PHASE NOISE
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NE71300
NE71300
NE71300N
NE71300M
NE71300L
24-Hour
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C10535E
Abstract: NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B NE71383
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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73E-12
Abstract: 20771 NE71300 NE71300L NE71300M NE71300N lg 8838 LS 7642
Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 3 24 • HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz 2.5 21 Noise Figure, NF dB • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µm • EPITAXIAL TECHNOLOGY • LOW PHASE NOISE
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NE71300
NE71300
6e-12
15e-12
5e-12
04e-12
24-Hour
73E-12
20771
NE71300L
NE71300M
NE71300N
lg 8838
LS 7642
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C10535E
Abstract: NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B
Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION
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NE713
NE71300-N
NE71300-M
NE71300-L
NE71383B
NE71383B]
C10535E
NE713
NE71300
NE71300-L
NE71300-M
NE71300-N
NE71383B
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NE71300
Abstract: NE71300L NE71300M NE71300N 0460 lg 8838
Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz Noise Figure, NF dB • HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µm • EPITAXIAL TECHNOLOGY • LOW PHASE NOISE DESCRIPTION
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NE71300
NE71300
6e-12
15e-12
5e-12
04e-12
24-Hour
NE71300L
NE71300M
NE71300N
0460
lg 8838
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Untitled
Abstract: No abstract text available
Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 NOISE FIGURE & A S SO C IA T E D GAIN v s. FR EQ U EN C Y Vds = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 G Hz HIGH ASSOCIATED GAIN m G a = 9.5 dB T Y P at f = 12 G Hz Lg = 0.3 |_im, Wg = 280 |_im
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NE71300
NE71300
NE71300N
NE71300M
NE71300L
24-Hour
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JE 1692
Abstract: No abstract text available
Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 NOISE FIGURE & A S SO C IA T E D GAIN v s. FR EQ U EN C Y Vds = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 G Hz HIGH ASSOCIATED GAIN GA = 9 . 5 d B T Y P a t f = 12 G H z m Lg = 0.3 |_im, W g = 280 |_im
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NE71300
JE 1692
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NEC D 809 F
Abstract: NEC D 809 71383B NEC D 809 k
Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 4 GHz • High associated gain Ga = 14 dB TYP. a t f = 4 G H z • Gate width: Wg = 280 fim • Gate Length: Lg = 0.3 /xm
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NE713
NE71300-N
NE71300-M
NE71300-L
NE71383B
NE71383B]
NE71300]
NEC D 809 F
NEC D 809
71383B
NEC D 809 k
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sg 6822
Abstract: ne71383B sg 8841 ku-band oscillator D 1307
Text: L to Ku Band Low Noise N-Channel GaAs MESFET NE71383B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ a tf = 12 GHz m • HIGH ASSOCIATED GAIN: < 5 14 dB typ at f = 4 GHz ro • GATE WIDTH: Wg = 280 jim
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NE71383B
NE71383B
NE71300L
24-Hour
sg 6822
sg 8841
ku-band oscillator
D 1307
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z 0607
Abstract: No abstract text available
Text: L to Ku Band Low Noise N-Channel GaAs MESFET NE71383B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ at f = 12 GHz • HIGH ASSOCIATED GAIN: 14 dB typ at f = 4 GHz • GATE WIDTH: Wg = 280 \im
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NE71383B
NE71383B
NE71300L
NE71383
24-Hour
z 0607
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Untitled
Abstract: No abstract text available
Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, I ds = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz HIGH ASSOCIATED GAIN Ga = 9.5 dB TYP at f = 12 GHz ffl 2. L g = 0.3 urn, W g = 280 nm <
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NE71300
TheNE71300
NE71300
3e-12
6e-12
15e-12
5e-12
04e-12
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