Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NE760 Search Results

    SF Impression Pixel

    NE760 Price and Stock

    NEC Electronics Group NE76038-T1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics NE76038-T1 620
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    NEC Electronics Group NE76084-2.4T1

    KU BAND, GAAS, N-CHANNEL, RF SMALL SIGNAL, MESFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NE76084-2.4T1 209
    • 1 $12
    • 10 $12
    • 100 $4.8
    • 1000 $4.8
    • 10000 $4.8
    		Buy Now

    NEC Electronics Group NE76083A

    RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, KU BAND, GALLIUM ARSENIDE, N-CHANNEL, METAL SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NE76083A 40
    • 1 $9
    • 10 $4.5
    • 100 $4.5
    • 1000 $4.5
    • 10000 $4.5
    		Buy Now

    NEC Electronics Group NE76038D

    IN STOCK SHIP TODAY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Component Electronics, Inc NE76038D 3
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    NE760 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE76000 NEC C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET Original PDF
    NE76000 NEC Semiconductor Selection Guide Original PDF
    NE76000 NEC Low noise K to Ku band GaAs MESFET. Original PDF
    NE76000 NEC 90 GHz, low noise Ku-K band GaAs MESFET Scan PDF
    NE76000L NEC Low noise K to Ku band GaAs MESFET. Original PDF
    NE76038 NEC Semiconductor Selection Guide Original PDF
    NE76038 NEC Low noise K to Ku band GaAs MESFET. Original PDF
    NE76038 Unknown FET Data Book Scan PDF
    NE76038-T1 NEC Low noise K to Ku band GaAs MESFET. Original PDF
    NE76083A NEC LOW NOISE L TO Ku BAND GaAs MESFET Original PDF
    NE76083A NEC Semiconductor Selection Guide Original PDF
    NE76083A NEC 90 GHz, low noise Ku-K band GaAs MESFET Scan PDF
    NE76084 NEC Semiconductor Selection Guide Original PDF
    NE76084 NEC Semiconductor Selection Guide 1995 Original PDF
    NE76084 NEC 90 GHz, low noise Ku-K band GaAs MESFET Scan PDF
    NE76084-2.4 NEC 90 GHz, low noise Ku-K band GaAs MESFET Scan PDF
    NE76084S NEC Low noise K to Ku band GaAs MESFET. Original PDF
    NE76084-SL NEC C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET Original PDF
    NE76084S-T1 NEC Low noise K to Ku band GaAs MESFET. Original PDF
    NE76084-T1 NEC C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET Original PDF

    NE760 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NE76038

    Abstract: uPC2710 uPC2721 AN1015 UPC2710T UPC2721GR low noise block down converter 1 henry INDUCTOR POWER AMPLIFIER CIRCUIT DIAGRAM 10000 L4* Low noise
    Text: California Eastern Laboratories AN1015 APPLICATION NOTE Low Cost, High Performance Receiver For Wireless Applications INTRODUCTION down converter. The LNA was designed using a discrete low noise GaAs MESFET NE76038 with a matching structure made using discrete components. The NE76038 is fabricated


    Original     		AN1015 NE76038) NE76038 uPC2710 uPC2721 AN1015 UPC2710T UPC2721GR low noise block down converter 1 henry INDUCTOR POWER AMPLIFIER CIRCUIT DIAGRAM 10000 L4* Low noise PDF

    transistor nec D78

    Abstract: D78 NEC NEC D73 d3055 J100 J150 NE76000 transistor d176
    Text: DATA SHEET GaAs MES FET NE76000 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • CHIP DIMENSIONS Unit: Pm Low noise figure NF = 1.6 dB TYP. at f = 12 GHz High associated gain 450 57 Ga = 9.0 dB TYP. at f = 12 GHz DRAIN DRAIN VDS 5.0 V


    Original     		NE76000 transistor nec D78 D78 NEC NEC D73 d3055 J100 J150 NE76000 transistor d176 PDF

    NE76038

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE76038 SCHEMATIC see Page 2 FET NONLINEAR MODEL PARAMETERS (1) UNITS Parameters Q1 Parameters Q1 Parameter VTO -0.73 RG capacitance picofarads VTOSC RD inductance nanohenries ALPHA 4 RS resistance ohms BETA 0.063 RGMET GAMMA KF GAMMADC(2)


    Original     		NE76038 98e-11 2e-12 11e-12 4e-12 04e-12 24-Hour NE76038 PDF

    low noise, hetero junction fet

    Abstract: NE76038 UPB1506 NE721S01 UPC2711 2,5GHz oscillator Prescalers NE329S01 NE429M01 NE696M01
    Text: DBS Receiver NEW! NEW! NE429M01 Hetero Junction FET NE76038 MESFET • 6 pin super minimold package • Available on tape and reel • Low cost plastic package • Available on tape and reel UPC2711/12TB IF Amplifiers • Now available in smaller, lower cost SOT-363 packages


    Original     		NE429M01 NE76038 UPC2711/12TB OT-363 NE696M01 NE329S01 NE721S01 UPC2781GR 520MHz 20MHz low noise, hetero junction fet NE76038 UPB1506 NE721S01 UPC2711 2,5GHz oscillator Prescalers NE329S01 NE429M01 NE696M01 PDF

    ne325

    Abstract: small signal GaAs FET RF Transistor Selection ne324
    Text: Small Signal GaAs FET Selection Graph Minimum Noise Figure, NF Min dB 2 NE332 1 NE324 NE325 1 4 2 6 8 10 12 16 20 30 Frequency, f (GHz) Gain, GA (dB) 20 NE325 10 NE324 NE332 NE760 NE761 1 2 4 6 8 10 12 16 20 30 Frequency, f (GHz) EXCLUSIVE NORTH AMERICAN AGENT FOR


    Original     		NE332 NE324 NE325 NE760 NE761 24-Hour ne325 small signal GaAs FET RF Transistor Selection ne324 PDF

    gs 069 0605

    Abstract: NE76084 marking code t1a nec 2571 NE76084-T1 C10535E NE76084-SL NE76084-T1A 6-18GHz NEC Ga FET marking V
    Text: DATA SHEET GaAs MES FET NE76084 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES PACKAGE DIMENSIONS Unit: mm • Low noise figure & High associated gain NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz 1.78 ± 0.2 • Gate length: L g = 0.3 µ m


    Original     		NE76084 NE76084-T1 NE76084-T1A gs 069 0605 NE76084 marking code t1a nec 2571 NE76084-T1 C10535E NE76084-SL NE76084-T1A 6-18GHz NEC Ga FET marking V PDF

    NEC D2217

    Abstract: D1647 D1426 TRANSISTOR D1546 d2422 transistor d1647 d1426 transistor D1427 D1664 transistor d1065
    Text: DATA SHEET GaAs MES FET NE76083A C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • PACKAGE DIMENSIONS Low noise figure Unit : mm NF = 1.6 dB TYP. at f = 12 GHz (NE76083A) NF = 2.4 dB MAX. at f = 12 GHz (NE76083A-2.4) 1.88±0.3 High associated gain


    Original     		NE76083A NE76083A) NE76083A-2 NEC D2217 D1647 D1426 TRANSISTOR D1546 d2422 transistor d1647 d1426 transistor D1427 D1664 transistor d1065 PDF

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76083A NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V d s = 3 V , I d s = 1 0 mA LOW NOISE FIGURE NF= 1.6 d B T Y P a tf = 12GHz HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz 24 21 Lg = 0.3 |xm, Wg = 280 |im


    OCR Scan     		12GHz NE76083A NE76083A IS22I PDF

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NE76000 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP a tf = 12 GHz HIGH ASSOCIATED GAIN 0Q ;o Ga = 9 dB TYP at f = 12 GHz < O c La = 0.3 |xm, Wa = 280 um ro


    OCR Scan     		NE76000 NE76000 NE760 lS22l IS12I 20jim NE76000L NE76000N PDF

    HA 12058

    Abstract: 9971GI nec 2561-2 NEC Ga FET marking A NEC Ga FET marking Rf
    Text: DATA SHEET GaAs MES FET NE76038 G ENERAL PURPOSE N-CHANNEL GaAs MES FET DESCRIPTION NE76038 is a N-channel GaAs MES FET housed in plastic package. The device is fabricated by ion implantation for im proved RF and DC performance reliability and uniform ­ ity. Its excellent low noise and high associated gain make


    OCR Scan     		NE76038 NE76038 HA 12058 9971GI nec 2561-2 NEC Ga FET marking A NEC Ga FET marking Rf PDF

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NE76000 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 3 V, Ids = 10 mA FEATURES LOW NO ISE FIG URE NF = 1 .6 dB TYP at f = 12 GHz HIG H A S S O C IA TED GAIN Ga = 9 dB TYP at f = 12 GHz m ;o < D ç m Lg = 0.3 |im , W g = 280 |im


    OCR Scan     		NE76000 E76000 NE760 04e-12 NE76000 140nm NE76000L PDF

    0544S

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NE76084S NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V d s = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz 24 HIGH ASSOCIATED GAIN G a = 9 dB TYP at f = 12 GHz 21 CO L g = 0.3 ^m , W g = 280 jam


    OCR Scan     		NE76084S NE76084S IS12I IS12I IS22I NE76084-T1 0544S PDF

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE LTO Ku BAND GaAs MESFET FEATURES NE76084 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, I ds = 10 mA LOW NOISE FIGURE NF - 1.6 dB TYP at f - 12 GHz HIGH ASSOCIATED GAIN G a = 9 dB TYP at f = 12 GHz m 33 , L g = 0.3 jim, Wg = 280 jim <


    OCR Scan     		NE76084 E76084 IS12S21I NE76084S NE76084-T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76083A NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V d s = 3 V, I d s = 1 0 mA L O W N O IS E F IG U R E NF = 1.6 dB TYP at f = 12 GHz H IG H A S S O C IA T E D G A IN G a = 9 d B TYP at f = 12 GHz m m "O T3


    OCR Scan     		NE76083A NE76083A PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET GaAs MES FET NE76000 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • CHIP DIMENSIONS Unit: //m Low noise figure NF = 1.6 dB TYP. at f = 12 GHz • High associated gain Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: Lg = 0 .3 //m


    OCR Scan     		NE76000 PDF

    TC2260

    Abstract: KU 506 transistor NEC D 809 F NE76083A low noise FET NEC U C band FET transistor s-parameters
    Text: DATA SHEET GaAs MES FET NE76083A C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • P A C K A G E D IM E N S IO N S Low noise figure Unit : mm NF = 1.6 dB TYP. at f = 12 GHz (NE76083A) NF = 2.4 dB MAX. at f = 12 GHz (NE76083A-2.4) • High associated gain


    OCR Scan     		NE76083A NE76083A) NE76083A-2 TC2260 KU 506 transistor NEC D 809 F NE76083A low noise FET NEC U C band FET transistor s-parameters PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET G a As MES FET NE76000 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • CHIP DIMENSIONS Unit: /u rn Low noise figure NF = 1.6 dB TYP. at f = 12 GHz High associated gain 450 - Ga = 9.0 dB TYP. at f : 12 GHz Gate length: Lg


    OCR Scan     		NE76000 PDF

    yx 861

    Abstract: yx 801 BUH 508 VAUC GT 1083 NE76084-T1 NE76083A NE76084S L to Ku Band Low Noise GaAs MESFET x band GaAs MESFET 261
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NE76084S NOISE FIGURE ANO ASSOCIATED GAIN vs FREQUENCY Vos = 3 V, Id s • 10 mA FEATURES LOW NOISE FIGURE NF * 1,6 d8 TYP a! f = 12 GHz HIGH ASSOCIATED GAIN G a = 9 0 0 TYP at f • 12 GHz LG • 0.3 ¿im. W g = 280 S LOW COST METAL/CERAMIC PACKAGE


    OCR Scan     		NE76084S NE76064S NE76084S test1342 NE76084-T1 yx 861 yx 801 BUH 508 VAUC GT 1083 NE76083A L to Ku Band Low Noise GaAs MESFET x band GaAs MESFET 261 PDF

    NE76084

    Abstract: NE760 NE76000 NE76083A S221 y427
    Text: N E C / CALIFORNIA 1SE D NEC □4S7414 G D O l t m LOW NOISE Ku-K BAND G aAs MESFET 7 - r - 3 h 4 S NE760 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz The NE76000 provides a low noise figure and high associated


    OCR Scan     		4E7414 NE760 NE76000 NE76084 NE76083A S221 y427 PDF

    NE76038

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku-BAND Ga As MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, I ds = 10 mA LOW NOISE FIGURE: 1.8 dB typical at 12 GHz 4 HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz 24 3.5 21 Ga 18 3 Lg = 0.3 im, Wg = 280 )im


    OCR Scan     		NE76038 NE76038 NE76038-T1 24-Hour PDF

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76000 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, I d s = 10 m A LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz HIGH ASSOCIATED GAIN tn T> G a = 9 dB TYP at f = 12 GHz L g = 0.3 |im , W g = 2 80 Jim


    OCR Scan     		NE76000 NE76000 NE760 IS12S21I NE76000L PDF

    NE76000

    Abstract: 3079 alpha wire G1225
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NE76000 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES V ds = 3 V, Id s = 1 0 m A LOW NOISE FIGURE NF = 1.6 dB TYP a t f = 12GHz 24 21 HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz 18 < Lg = 0.3 im, W g = 280 jam


    OCR Scan     		12GHz NE76000 NE76000 NE760 140jjm 20jjjm NE76000L 3079 alpha wire G1225 PDF

    NE67383

    Abstract: No abstract text available
    Text: General Purpose GaAs FETs Typical Specifications @ T a = 25°C Pw t m a '4 m . I NEW^ Güw> |N EW *> I NEW > I N Ew V I NEW ^ »»a Vus Id s M ÊM mA (mA) p p fc M NE33200 NE67300 NE71300 NE76000 NE76100 0.3 0.3 0.3 0.3 1.0 280 280 280 280 400 0.1 0.1 0.1


    OCR Scan     		NE33200 NE67300 NE71300 NE76000 NE76100 NE76083A NE33284A NE25118 NE25139 NE25339 NE67383 PDF

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE LTO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, Ids = 10 mA LOW NOISE FIGURE: 1.8 dB typical at 12 G H z 24 HIGH ASSOCIATED GAIN: 21 7 .5 dB typical at 12 G H z Lg = 0.3 |im, Wg = 280 }im 1H m •Q


    OCR Scan     		NE76038 IS12I b427S25 NE76038 NE76038-T1 aab5503 PDF