NEC 424260 Search Results

Contextual Info: * *C -.s, IPD42S4260 |aPD42S4260L 262.144x16 Bit Dynamic CMOS DRAM NEC NEC Electronics Inc. ! Preliminary Information October 1991 Description Pin Configuration The jiPD42S4260/L is a fast page dynamic RAM organized as a 262,244 words by 16 bits and designed

42S4260

Abstract: D4242 D424* NEC d424260 D424260LG5-A60
Contextual Info: NEC NEC Electronics Inc. Description The /JPD424260A/L and ^PD42S4260A/L are fast-page dynamic RAMs organized as 262,144 words by 16 bits and designed to operate from a single power supply: Optional features are power supply voltage +5 V or +3.3 V and a new refresh mode called “self-refresh.”

TRW J500

Abstract: k45752 52S marking
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4260L, 424260L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The fiPD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page mode and

42s4260

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PP42S4260AL, 424260AL 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S4260AL, 424260AL are 262,144 words by 16 bits CMOS dynamic RAMs. The fast page mode and

424260L

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / juPD42S4260L, 424260L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿iPD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page m ode and

tosi 818

Abstract: PD424260AL
Contextual Info: DATA SHEET NEC / / /IPD42S4260AL, 424260AL MOS INTEGRATED CIRCUIT 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿/PD42S4260AL, 424260A L are 262,144 w ords by 16 bits C M OS dynam ic RAMs. The fast page mode and

42S4260

Abstract: nec 42s4260 wwS marking 424260-70
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /iPD42S4260, 424260 are 262,144 words by 16 bits dynamic CMOS RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.

424260-70 nec japan

Abstract: 424260-70 424260-80 uPD424260 424260 NEC mpd42s4260 TRW 1043
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD42S4260, 424260 4M -BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿¡PD42S4260, 424260 are 262,144 words by 16 bits dynamic CMOS RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.

D42S4260

Abstract: 424260 424260 NEC 424260-60 42S4260
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT /¿PD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿xPD42S4260, 424260 are 262,144 words by 16 bits dynamic CMOS RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.

424260 NEC

Abstract: D4242 EZ 938 D424260 PD42S4260-80 BH27 nec 424260 424260-70 PD424260
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D escription The /¿PD42S4260, 424260 are 262,144 words by 16 bits dynamic CMOS RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.

dd417

Contextual Info: 'd a t a b427525 GÜM17SE ST2 « N E C E NEC sh eet MOS INTEGRATED CIRCUIT f juPD42S4260L, 424260L 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The /¿PD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs with optional fast page mode

D42S4260

Abstract: 424260 NEC PD42S4260-70 424260-70
Contextual Info: NEC MOS INTEGRATED CIRCUIT juPD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿iPD42S4260, 424260 are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page m ode and byte read/w rite m ode capability realize high speed access and lo w pow er consum ption.

UPD424260

Abstract: 424260-70 42S4260
Contextual Info: NEC MOS INTEGRATED CIRCUIT /¿PD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The jiPD42S4260, 424260 are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page m ode and byte read/w rite m ode ca p a bility realize high speed access and lo w pow er consum ption.

Contextual Info: 1^ 1 W NEC Electronics Inc. pPD424260A/L, 42S4260A/L 262,144 X 16-Bit Dynamic CMOS RAM Preliminary Information Description The /L/PD424260A/L and /JPD42S4260A/L are fast-page dynamic RAMs organized as 262,144 words by 16 bits and designed to operate from a single power supply:

D4242

Contextual Info: SEC fiPD424260A/L, 42S4260A/L 262,144 X 16-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The /yPD424260A/L and /JPD42S4260A/L are fast-page dynamic RAMs organized as 262,144 words by 16 bits and designed to operate from a single power supply: Optional features are power supply voltage +5 V or

42s4260

Contextual Info: N E C ELECTRONICS INC blE D N EC NEC Electronics Inc. • b427525 0033037 053 « N E C E #iPD424260A/L, 42S4260A/L 262,144 X 16-Bit Dynamic CMOS RAM 17 Description The /JPD424260A/L and /JPD42S4260A/L are fast-page dynam ic RAMs organized as 262,144 words by 16 bits

lz 02 1068

Abstract: TEA 1091
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ju P D 4 2 S 4 2 6 0 A L , 4 2 4 2 6 0 A L 3.3 V O PERATIO N 4 M-BIT DYNAMIC RAM 256 K-WORD B Y 16-BIT, FA ST PA G E MODE, B Y T E READ/W RITE MODE Description Th e /tPD 42S4260AL, 424260A L are 2 62,144 words by 16 bits CM O S dynamic RAM s. T h e fast page mode and

IR351C

Abstract: D42S4260G5
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT ¿¿PD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description T h e ¿ IP D 4 2 S 4 26 0 , 4 2 4 2 6 0 a re 2 6 2 ,1 4 4 w o rd s b y 16 b its d y n a m ic C M O S R A M s . T h e fa s t p a g e m o d e and b yte

424260AL

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT f juPD42S4260AL, 424260AL 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /xPD42S4260AL, 424260AL are 262,144 words by 16 bits CMOS dynamic RAMs. The fast page mode and

42S4260

Abstract: upd 40pin
Contextual Info: DATA SHEET M O S INTEGRATED CIRCUIT juPD42S4260AL, 424260AL 3.3 V OPERATION 4 M BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The juPD42S4260AL, 424260AL are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page mode and

424260-60

Abstract: TAA 691 uPD42S4260-60 UPD424260-60 P40L PD424260
Contextual Info: DATA SHEET I V I F f " / M O S I N T E G R A T E D C IR C U IT />PD42S4260-60, 424260-60 4M -B IT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /jPD42S4260-60, 424260-60 are 262,144 words by 16 bits CMOS dynam ic RAMs. The fast pago mode

424260-70

Abstract: 424260-80 42S4260 JPD42S4260-70 424260-70 nec japan upd424260
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S4260, 424260 4M -B IT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿ PD42S4260, 424260 are 262,144 words by 16 bits dynam ic CMOS RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consum ption.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT f / PD42S4260AL, 424260AL 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿¡PD42S4260AL, 424260A L are 262,144 w ords by 16 bits CMOS dynam ic RAMs. The fast page mode and

42S4260

Abstract: 42S4260-70 NEC 42S4260-70
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT jUPD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE The ^PD42S4260, 424260 are 262,144 words by 16 bits dynamic CMOS RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.