Untitled
Abstract: No abstract text available
Text: INDUSTRIAL AUTOMATION & PROCESS CONTROL CABLES 15.57 Instrumentation Cable 600V Tray Cables Description Part No. No. of Triads Color Code Standard Lengths Ft. m Standard Unit Weight Lbs. Jacket Thickness kg Inch mm Nominal OD Inch mm Maximum Pull Tension Minimum
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2SC5006
Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Text: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5006
2SC5006
2SC5006-T1
"Small Signal Amplifiers"
P1038
TD-2399
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2N4007 diode
Abstract: Transistor NEC 12d KT501A 2U diode PB6015A PB6015B KT209B 2u 85 kts3103b 2SA1362Y
Text: LOW-POWER SILICON PNP Item Number Part Number HA7806 HA7808 HA7808 MPSH69 2N2005 2N2334 2N2335 2N3318 2N917 2Nl024 10 ~~~~;~ 2S3021 2S3021 2N2004 2N1228 2N2370 2N2372 2S3221 2Nl027 15 20 ~~~~H 2N862 KT209A KT501A KT501B BCY49 2N1229 2N4007 A5T5221 2N5221 2N995
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HA7806
HA7808
MPSH69
2N2005
2N2334
2N2335
2N3318
2N917
2Nl024
2N4007 diode
Transistor NEC 12d
KT501A
2U diode
PB6015A
PB6015B
KT209B
2u 85
kts3103b
2SA1362Y
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nec 2532
Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. in millimeters • Low Noise, High Gain
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2SC5014
2SC5014)
2SC5014-T2
nec 2532
NEC JAPAN 282 110 01
NEC 282 185 01
816-102
2SC5014
2SC5014-T1
2SC5014-T2
NEC 2134 transistor
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pt 2399
Abstract: 2SC5006 2SC5006-T1
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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nec 2401 831
Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and
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2SC5010
2SC5010
nec 2401 831
nec 2401
2SC5010-T1
437 20000
marking 83
7749 transistor
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nec 2401 831
Abstract: nec 2401 2SC5010 nec 2035 744 2SC5010-T1 3699 npn
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: NEC ffPD46251 262,144 X 1-Bit Static BiCMOS RAM NEC Electronics Inc. Description Pin Configuration The ¿PD46251 is a 262,144 x 1-bit static RAM featuring a fast access time made possible by ultra-high-speed BiCMOS technology. Fully static operation requires no
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ffPD46251
PD46251
24-Pln
fiPD46251
24-pin
/JPD46251
83IH-5773B
JJPD46251
-5775B
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5006
2SC5006
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2sc2888
Abstract: 2SC2926 2SC2166 2sc1047 2sc1907 2SC387A 2SD1270 2Sd917 2SC787 2sc2314
Text: - 96 - sa € * * * * * * Type No. 2SC 740 2SC 7 412SC 742 2SC 743 2SC 745 2SC 746 2SC 748 * 2SC 749 * 2SC 751 2SC 752 * 2SC 753 * 2SC 754 * 2SC 755 * 2SC 756A a € Manuf. z m SANYO # z m Z «±ii t±M «±S 2SC2183 S drài 2SC2999 2SC4455 s 0 s V — —
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2SC740
2SC741
2SC742
2SC743
2SC745
2SC746
2SC748
2SC387A
2SC998
2SC549
2sc2888
2SC2926
2SC2166
2sc1047
2sc1907
2SD1270
2Sd917
2SC787
2sc2314
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761b nec
Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
Text: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338
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2SB927
2SB739
2SB1010
2SA1705
2SB740
2SA684
2SB1035
2SB1041
2SA133S
2SA1313
761b nec
2SB1010
2sb1041
761a
2sa684 nec
2SB737
2SB927
2SB686
761-B
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transistor 2sc 1586
Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5006
2SC5006
transistor 2sc 1586
B 660 TG
TRANSISTOR 2Sc 2525
L 3705
2sc 1364 transistor
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NEC 2532 n 749
Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation
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2SC5014
2SC5014-T1
2SC5014-T2
2SC5014)
NEC 2532 n 749
NEC 2532
PT1060
transistor NEC D 822 P
transistor NEC D 587
NEC 2134 transistor
transistor c 6091
transistor sp 772
SP 2822
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nec 2501 904
Abstract: AN 17821 audio nec 303 j fet nec 7912
Text: DATA SHEET GaAs MES FET NE721S01 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 7dBTYP. @ f = 1 2 G H z • Gate Length: Lg = 0.8 /xm recessed gate • Gate Width: Wg = 330 • fim Plastic package ORDERING INFORMATION
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NE721S01
NE721S01-T1
E721S01-T1B
nec 2501 904
AN 17821 audio
nec 303 j fet
nec 7912
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LA 7693
Abstract: ic CD 4047 7737 transistor
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain
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2SC5014
2SC5014-T1
2SC5014-T2
LA 7693
ic CD 4047
7737 transistor
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U11047E
Abstract: 28PIN IC 8-bit Microcontroller U1168
Text: PRELIMINARY PRODUCT INFORMATION NEC MOS INTEGRATED CIRCUIT 8-BIT SINGLE-CHIP MICROCONTROLLER The /iPD789806Y is a /iPD789806Y subseries product of the 78K/0S series. In addition to an 8-bit CPU, it incorporates a comprehensive set of hardware such as I/O ports, timers, serial
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uPD789806Y
78K/0S
PD789806Y
78K/0
//PD78F9806Y,
b427525
PD789806Y
C10943X
C10535J
U11047E
28PIN IC 8-bit Microcontroller
U1168
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transistor NEC B 617
Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and
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2SC5010
2SC5010
transistor NEC B 617
nec 2035 744
zo 607 p 408
7749 transistor
ic 151 811
transistor 3568
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4800L
Abstract: IC-3052B uPD424800 UPD42S480
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD42S4800L, 424800L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD42S4800L, 424800L are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD42S4800L
uPD424800L
PD42S4800L,
424800L
PD42S4800L
28-pin
//PD42S4800L-A70,
424800L-A70
/JPD42S4800L-A80,
4800L
IC-3052B
uPD424800
UPD42S480
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Untitled
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT juPD42S4400L, 424400L 3.3 V OPERATION 4 M BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The /¿PD42S4400L, 424400L are 1 048 576 w ords by 4 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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juPD42S4400L
424400L
PD42S4400L,
424400L
PD42S4400L
26-pin
//PD42S4400L
PD42S4400L
cycles/128
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET CMOS INTEGRATED CIRCUIT jt iP D 4 2 S 1 7 4 0 5 , 4 2 1 7 4 0 5 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE Description The /iPD42S17405, 4217405 are 4 194 304 words by 4 bits CMOS dynam ic RAM s with optional hyper page
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/iPD42S17405,
iPD42S17405,
26-pin
iPD42S17405-60,
673to
016to
008to
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from
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2SC5010
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4218160
Abstract: NEC 4218160 nec A2C UPD42S18160
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /JPD42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /tPD42S18160, 4218160 are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.
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uPD42S18160
16-BIT,
/tPD42S18160,
/xPD42S18160
50-pin
42-pin
iPD42S18160-60,
iPD42S18160-70,
VP15-207-2
M27S25
4218160
NEC 4218160
nec A2C
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NEC 4216160
Abstract: No abstract text available
Text: M O S INTEGRATED CIRCUIT ju P D 4 2 S 16 1 6 0 ,4 2 1 6 1 6 0 ,4 2 S 1 8 1 6 0 ,4 2 18 16 0 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The fiPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 w ords by 16 bits dynam ic CM O S RAMs.
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16-BIT,
uPD42S16160
uPD4216160
uPD42S18160
uPD4218160
42S18160
50-pin
42-pin
/tPD42S16160,
NEC 4216160
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Untitled
Abstract: No abstract text available
Text: _ PRELIMINARY DATA SHEET N EC MOS INTEGRATED CIRCUIT MC-428000A36 SERIES 8M -WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-428000A36 series is a 8 388 608 words by 36 bits dynamic RAM module on which 16 pieces of 16M DRAM uPD 4217400 and 8 pieces of 4M
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MC-428000A36
36-BIT
uPD424100
72B-50A50
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