NEC CAPACITORS VOL
Abstract: No abstract text available
Text: Multilayer Ceramic Capacitors Standard Products NEC TOKIN’s multilayer ceramic capacitors are high-dielectric capacitors fabricated by sintering at low temperature. NEC TOKIN was the world's first to employ these capacitors, using NEC TOKIN’s unique low-temperature sintered
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UL94V0
NEC CAPACITORS VOL
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smt 35rv
Abstract: smd code marking NEC tantalum capacitor DN0J101M1S NRA225M10 smd code marking NEC capacitor MARKING CODE SMD JW DN0J 35rv transistor horizontal c 5936 104 TANTALUM capacitor nec
Text: CAPACITORS DATA BOOK NEC Corporation 1995 PREFACE Since the development of solid electrolyte tantalum capacitor having excellent performance in 1955, NEC has been advancing research into new materials and improved production technologies, and has introduced
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VIC3151,
smt 35rv
smd code marking NEC tantalum capacitor
DN0J101M1S
NRA225M10
smd code marking NEC capacitor
MARKING CODE SMD JW
DN0J
35rv
transistor horizontal c 5936
104 TANTALUM capacitor nec
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nec eN8 capacitor
Abstract: qa solar 3722 9l 476 Tantalum Capacitor NEC TOKIN TANTALUM CAPACITORS nec jj8 nec gJ8 tantalum ca7 ne gj8 Samsung Tantalum Capacitor marking code je8
Text: CAPACITORS DATA BOOK 2005 Correct Use of Tantalum Chip Capacitors Be sure to read this before using NEC TOKIN Tantalum Capacitors. [Notes] ● Be sure to read "PRECAUTIONS FOR TANTALUM CAPACITOR USE" p56 - p66 before commencing circuit design or using the capacitor.
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D-81829
0622EDTM01VOL02E
nec eN8 capacitor
qa solar 3722 9l
476 Tantalum Capacitor
NEC TOKIN TANTALUM CAPACITORS
nec jj8
nec gJ8
tantalum ca7
ne gj8
Samsung Tantalum Capacitor
marking code je8
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tokin multilayer ceramic capacitor
Abstract: marking X5T
Text: Precautions for Use ● Soldering Leaded type capacitors ● Reflow soldering (Chip type capacitors) Soldering of multilayer ceramic capacitors should be carried out under the conditions of less than 260°C and not more than 5 sec. NEC TOKIN’s multilayer ceramic capacitors employ hightemperature solder for connecting the capacitor element
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nec jj8
Abstract: nec gJ8 NEC TOKIN TANTALUM CAPACITORS ne gJ8 NE y JE8 marking code je8 jN8 datasheet ne jn8 nec JS7 ne jj8
Text: 02 Correct Use of Chip Tantalum Capacitors Be sure to read this before using NEC TOKIN Tantalum Capacitors. [Notes] ● Be sure to read "Notes on Using The Solid Tantalum Capacitor" p33 - p43 and "Cautions" (p43) before commencing circuit design or using the capacitor.
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0255EDNE02VOL02E
nec jj8
nec gJ8
NEC TOKIN TANTALUM CAPACITORS
ne gJ8
NE y JE8
marking code je8
jN8 datasheet
ne jn8
nec JS7
ne jj8
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nec eN8 capacitor
Abstract: ne jj8 marking code je8 nec jj8 ne8 je8 new jn8 ne jn8 NE y JE8 capacitor ne je8 nec en8
Text: Vol.02 C a p a c i t o r s Correct Use of Tantalum Chip Capacitors Be sure to read this before using NEC TOKIN Tantalum Capacitors. [Notes] ● Be sure to read "Notes on Using The Solid Tantalum Capacitor" p34 - p42 and "Cautions" (p43) before commencing circuit design or using the capacitor.
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NEC Tokin ultra low esr
Abstract: NEC tantalum capacitor
Text: TANTALUM CAPACITORS Description NEC TOKIN’s tantulum capacitors offer the designer advanced technological design and excellent performance c h a r a c t e r i s t i c s fo r f i l t e r i n g , by p a s s i n g , c o u p l i n g , decoupling, blocking, and R C timing circuits. They are
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marking code B2 NEC
Abstract: NEC tantalum capacitor 104 TANTALUM capacitor nec date code marking NEC 105M C105 SVHA1A225M SVHB21A475M SVHC1A156M DIP capacitor tantalum electronic corporation
Text: DATA SHEET TANTALUM CAPACITOR SV/H SERIES SURFACE MOUNT RESIN MOLDED TANTALUM CHIP CAPACITORS HIGH RELIABILITY NEC’s SV/H series solid tantalum capacitor has developed for automotive application. Comparing to the former type R Series , the higher reliability and the higher performance have been built in the
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DE0202
marking code B2 NEC
NEC tantalum capacitor
104 TANTALUM capacitor nec
date code marking NEC
105M
C105
SVHA1A225M
SVHB21A475M
SVHC1A156M
DIP capacitor tantalum electronic corporation
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PG2415T6X-E2-A
Abstract: marking 6-PIN PLASTIC TSON HS350
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2415T6X 0.05 to 6.0 GHz SPDT SWITCH DESCRIPTION The μPG2415T6X is a GaAs MMIC SPDT Single Pole Double Throw switch for 0.05 to 6.0 GHz applications, including dual-band wireless LAN. This device operates with dual control switching voltages of 2.7 to 3.3 V. This device can operate at frequencies
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PG2415T6X
PG2415T6X
PG2415T6X-E2-A
marking 6-PIN PLASTIC TSON
HS350
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HS350
Abstract: PG2415T6X
Text: GaAs INTEGRATED CIRCUIT PG2415T6X 0.05 to 6.0 GHz SPDT SWITCH DESCRIPTION The μPG2415T6X is a GaAs MMIC SPDT Single Pole Double Throw switch for 0.05 to 6.0 GHz applications, including dual-band wireless LAN. This device operates with dual control switching voltages of 2.7 to 3.3 V. This device can operate at frequencies
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PG2415T6X
PG2415T6X
HS350
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2406TB 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from
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PG2406TB
PG2406TB
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2406T6R 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from
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PG2406T6R
PG2406T6R
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HS350
Abstract: package T6R
Text: GaAs INTEGRATED CIRCUIT PG2406T6R 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from
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PG2406T6R
PG2406T6R
HS350
package T6R
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2406TK 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from
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PG2406TK
PG2406TK
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UPG2158T5K-E2-A
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2158T5K L, S-BAND SPDT SWITCH DESCRIPTION The µPG2158T5K is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from
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PG2158T5K
PG2158T5K
UPG2158T5K-E2-A
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Marking G2
Abstract: HS350
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2158T5K L, S-BAND SPDT SWITCH DESCRIPTION The µPG2158T5K is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from
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PG2158T5K
PG2158T5K
Marking G2
HS350
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2415T6X 0.05 to 6.0 GHz SPDT SWITCH DESCRIPTION The μPG2415T6X is a GaAs MMIC SPDT Single Pole Double Throw switch for 0.05 to 6.0 GHz applications, including dual-band wireless LAN. This device operates with dual control switching voltages of 2.7 to 3.3 V. This device can operate at frequencies
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PG2415T6X
PG2415T6X
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marking g3p
Abstract: HS350 VP215
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2030TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG2030TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 2.7 to 3.0 V. This device can operate frequency from
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PG2030TB
PG2030TB
marking g3p
HS350
VP215
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2030TK L, S-BAND SPDT SWITCH <R> DESCRIPTION The μPG2030TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and other L, S-band applications. This device can operate 2 control switching by control voltage 2.7 to 5.3 V, at frequencies from 0.5 to 2.5 GHz,
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PG2030TK
PG2030TK
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Untitled
Abstract: No abstract text available
Text: Tantalum Capacitors SVZ Series SV Z SER IES NEC’s SVZ series solid tantalum capacitors have low ESR value. These capacitors are suitable for noise reduction in a high-frequency application with its low ESR. FEATURES • Low Impedance ESR • Same case sizes as NEC’s R series are available
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22/iF/6
100/iF/10
100//F/10V
22//F/6
100/iF/10V
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d7343
Abstract: No abstract text available
Text: Tantalum Capacitors SVF Series SVF SERIES NEC’s SVF series capacitors feature a built-in fuse to minimize circuit damage from over current. Thers fuse-protected capacitors are suitable for noise absorption applications such as those required for computers, terminals and measuring instruments.
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33/zF/10V
d7343
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d424256
Abstract: PD424256 uPD424256 B31h D4242
Text: m ¿IPD424256 262,144 X 4-Bit Dynamic CMOS RAM e NEC E lectronics Inc. Description The ¡j PD424256 is a fast-page dynamic RAM organized as 262,144 words by 4 bits and designed to operate from a single + 5-volt power supply. Advanced polycide technology using trench capacitors minimizes silicon
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uPD424256
PD424256
PPD424256
PD424256
JLIPD424256
d424256
B31h
D4242
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VA140
Abstract: No abstract text available
Text: JJPD424102 4,194,304 X 1-Bit Dynamic CMOS RAM F l Mlí V NEC Electronics Inc. Pin Identification The pPD424102 is a static-column dynamic RAM orga nized as 4,194,304 words by 1 bit and designed to operate from a single +5-volt power supply. Advanced polycide technology using trench capacitors mini
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uPD424102
pPD424102
PD424102
JJPD424102
ffPD424102
fiPD424102
pPD424102
JPD424102
VA140
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83FM-6613A
Abstract: No abstract text available
Text: SEC NEC Electronics Inc. Description The /JPD424102 is a static-colum n dynam ic RAM orga nized as 4,194,304 words by 1 bit and designed to o p e ra te from a single + 5 -v o lt pow er supply. Advanced polycide technology using trench capacitors mini m izes silicon area and provides high s to ra g e cell c a
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uPD424102
63IH-6921B
JUPD424102
83FM-6613A
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