EPBAD45
Abstract: ul508a EPBCD45 feeder UL508 EPBAD42 EPBCD42
Text: IEC Enclosed Listed Power Distribution Blocks Features and Approvals: 1 UL Listed UL1953 2 Flexible Stranded Wire Approval 3 High Short Circuit Current Rating UL508A 4 Integral dovetail features for multi-line stackup 5 Meets Feeder spacing requirements of UL508A
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UL1953)
UL508A
6485K
SK-BH/8-09/2
EPBAD45
ul508a
EPBCD45
feeder
UL508
EPBAD42
EPBCD42
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d768 transistor
Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent
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NE32584C
NE32584C
d768 transistor
3-pin D128 transistor
transistor D128
transistor D586
D1515
ne32584c application note
transistor d436
d388 transistor
D832 transistor
transistor D442
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DMD43301
Abstract: NL10276BC30-17 SM02
Text: DMD43301 Specifications and Applications Information 10/17/06 Four Lamp DC to AC Inverter Preliminary The ERG DMD43301 DMD Series DC to AC inverter DMD Series features onboard connectors and can be easily dimmed using the onboard PWM Dimming or an external PWM
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DMD43301
DMD43301
NL10276BC30-17.
NL10276BC30-17
SM02
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NL10276BC30-18
Abstract: DMD43584F SM02
Text: DMD43584F Specifications and Applications Information 07/02/07 Four Lamp DC to AC Inverter Preliminary The ERG DMD43584F DMD Series DC to AC inverter DMD Series features onboard connectors and can be easily dimmed using the onboard PWM Dimming or an external PWM
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DMD43584F
DMD43584F
NL10276BC30-18.
NL10276BC30-18
SM02
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NL10276BC30-17
Abstract: No abstract text available
Text: DMD43471 Specifications and Applications Information Four Lamp DC to AC Inverter 01/19/11 Package Configuration 1.03 [26,2] MAX .809 [20,54] PCB components are shown for reference only. Actual product may differ from that shown. The ERG DMD43471 DMD Series DC to AC inverter
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DMD43471
DMD43471
NL10276BC30-17,
NL10276BC30-18,
NL12876BC26-25
NL10276BC30-17
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NL10276BC30-18
Abstract: NL10276BC30-17 IS NL12876BC26-25 DMD43471 NL10276BC30-17 SM02
Text: DMD43471 Specifications and Applications Information 06/04/09 Four Lamp DC to AC Inverter Preliminary Package Configuration 1.03 [26,2] MAX .809 [20,54] PCB components are shown for reference only. Actual product may differ from that shown. The ERG DMD43471 DMD
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DMD43471
DMD43471
NL10276BC30-17,
NL10276BC30-18,
NL12876BC26-25.
NL10276BC30-18
NL10276BC30-17 IS
NL12876BC26-25
NL10276BC30-17
SM02
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DMD42696
Abstract: NL12876BC26-21
Text: DMD42696 Specifications and Applications Information 05/01/04 Four Tube DC to AC Inverter Preliminary Package Configuration 1.03 [26,2] MAX .809[20,54] Output 2x 1 Powered by a regulated +12 Volt DC source, the DMD42696 is designed to power the backlight of the NEC
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DMD42696
DMD42696
NL12876BC26-21.
NL12876BC26-21
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uc2801
Abstract: pc2801 PH302 MPD6122G-XXX PH302B upc2801 SE303A-C SE313 mpd6122 NEC D 809 F
Text: DATA S H E E T SEC BIPOLAR ANALOG INTEGRATED CIRCU ITS E L E C T R O N DE VI C E u P C 2 8 A , u P C 2 8 1 IN FR A RED R EM O TE CO N TR O L P R E A M P L IF IE R S The /iPC2800A and fxPC2801 A are bipolar analog ICs specifically developed for use in infrared remote control
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uPC2800A
uPC2801
006-OOO2
SE303A-C
SE307-C
SE1003-C
SE313
2SC3616,
2SD1615,
2SC2001
uc2801
pc2801
PH302
MPD6122G-XXX
PH302B
mpd6122
NEC D 809 F
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product • Low Noise, High Gain • Low Voltage Operation
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2SC5011
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transistor NEC D 882 p
Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain
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2SC5011
2SC5011-T1
transistor NEC D 882 p
393AN
transistor 2sc 3203
nec d 1590
2sc 1329
transistor NEC b 882
nec a 634
e50p
NEC D 822 P
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613 GB 123 CT
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S
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uPA812T
2SC4227)
/xPA812T
613 GB 123 CT
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21134 015
Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
Text: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz
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NE38018
NE38018-T1
NE38018-T2
21134 015
nec K 3570
T 318 TE 2395
marking v67
of ic ST 4051
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NE32584C-T1
Abstract: nec 3435 transistor am 4428
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.
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NE32584C
NE32584C-T1A
NE32584C-T1
nec 3435 transistor
am 4428
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IC SEM 2105
Abstract: 3771 nec
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
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2SC5008
2SC5008
IC SEM 2105
3771 nec
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transistor NEC B 617
Abstract: nec. 5.5 473
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5007
2SC5007
transistor NEC B 617
nec. 5.5 473
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2SC 968 NPN Transistor
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from
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2SC5007
2SC 968 NPN Transistor
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NEC 424400
Abstract: D424400GS 424400-70 NEC 424400-70 424400 60 d424400 424400-60 424400 424400-70 nec uPD424400
Text: DATA SHEET MOS INTEGRATED CIRCUIT ,uPD42S4400, 424400 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿¡PD42S4400, 424400 are 1,048,576 w ords by 4 bits CMOS dynam ic RAMs. The fast page mode capability realize high speed access and low power consum ption.
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uPD42S4400
uPD424400
PD42S4400,
PD42S4400
26-pin
uPD42S4400-60
uPD42S4400-70
NEC 424400
D424400GS
424400-70
NEC 424400-70
424400 60
d424400
424400-60
424400
424400-70 nec
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NE850R5
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device
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NE850R5
NE850R599
CODE-99
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NE33284A
Abstract: NE33284A-SL NE33284AS
Text: SUPER LOW NOISE HJ FET NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz <n • GATE LENGTH: 0.3 pm • GATE WIDTH: 280 pm
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NE33284A
NE33284A
24-Hour
NE33284A-SL
NE33284AS
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63000-000
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device
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NE850R5
E850R599
CODE-99
63000-000
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2sc5194-t1
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR P A C K AG E D R A W IN G S FEATU RES • Low Voltage O peration, Low Phase D istortion • Low Noise Unit: mm N F = 1.5 dB TYP. @ V ce = 3 V, Ic = 7 mA, f = 2 GHz
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2SC5194
2SC5194-T2
2sc5194-t1
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hp 502 cold transistor
Abstract: 1H4 tube pc-9801 iw 1688 NL128102AC31-01 3460G
Text: DOD-H-6024 l/3g NEC T F T Type C O L O R . No . L O O M O D U L E N L 1 2 S 1 0 2 A G 3 1 — O 1 5 1 c m C2 O 1 Type . S X G A A n a 1 o s . F u i 1 — c o 1 ox* First editiOQ DATA SHEET Al 1 information io this docunent are subject to change without prior notice.
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DOD-H-6024
NL1281
hp 502 cold transistor
1H4 tube
pc-9801
iw 1688
NL128102AC31-01
3460G
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MC-422000A36FK-70
Abstract: MC-422000A36F-70 422000A36 MC-422000A36B-70 MC422000A36FK70 MC-422000A36FK nec mc-422000a36fk-70 MC-422000A36BK-70
Text: NEC MOS INTEGRATED CIRCUIT MC-422000A32, 422000A36 SERIES 2 M-WORD BY 32-BIT, 2 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE D escription The MC-422000A32 series is a 2 097 152 w ords by 32 bits dynam ic RAM m odule on which 16 pieces o f 4 M DRAM jiPD424400 are assembled.
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MC-422000A32,
422000A36
32-BIT,
36-BIT
MC-422000A32
uPD424400
MC-422000A36
jPD424400)
PD421000)
0055L
MC-422000A36FK-70
MC-422000A36F-70
MC-422000A36B-70
MC422000A36FK70
MC-422000A36FK
nec mc-422000a36fk-70
MC-422000A36BK-70
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SIT8103AC-13-33E-24.00000T
Abstract: No abstract text available
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT _ I1PD42S1780QL, 42178QQL 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The jUPD42S17800L, 4217800L are 2,097,152 w ords by 8 bits CMOS dynamic RAMs. The fast page mode
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uPD42S1780QL
42178QQL
jUPD42S17800L,
4217800L
PD42S17800L
28-pin
jiPD42S17800L-A60
4217800L-A60
/JPD42S17800L-A70,
SIT8103AC-13-33E-24.00000T
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