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    NEC LI ION Search Results

    NEC LI ION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MHM411-21 Murata Manufacturing Co Ltd Ionizer Module, 100-120VAC-input, Negative Ion Visit Murata Manufacturing Co Ltd
    ISL9219IRZ Renesas Electronics Corporation Li-ion Battery Charger Visit Renesas Electronics Corporation
    ISL9205BIRZ Renesas Electronics Corporation Li-ion Battery Charger Visit Renesas Electronics Corporation
    ISL9205AIRZ-T Renesas Electronics Corporation Li-ion Battery Charger Visit Renesas Electronics Corporation
    ISL9205DIRZ-T Renesas Electronics Corporation Li-ion Battery Charger Visit Renesas Electronics Corporation

    NEC LI ION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PA2721GR

    Abstract: PA2721GR-E2-A
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2721GR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2721GR is N-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.


    Original     		PDF PA2721GR PA2721GR PA2721GR-E1 PA2721GR-E1-A PA2721GR-E2 PA2721GR-E2-A PA2721GR-E2-A

    nec li ion

    Abstract: FET 8PIN equivalent of mosfet in computer mother board Pch MOS FET uPA1714 PA1700 PA1700A PA1702 PA1703 PA1712
    Text: LINEUP LINEUP OF 8-PIN SOP POWER MOSFET Toshihiko Ooishi DMOS Planer structure Source UMOS (U-Groove) structure Gate Source n+ Rch Gate n+ RJFET lower P Rch RJFET REPI n- REPI Rbulk Rbulk n+ Drain nn+ Drain Fig. 1 Comparison of Structure of Power MOSFET


    Original     		PDF PA1851 PA1853 PA1850 PA1810 PA1811 PA1812 PA1852 PA1801 PA1800 PA1802 nec li ion FET 8PIN equivalent of mosfet in computer mother board Pch MOS FET uPA1714 PA1700 PA1700A PA1702 PA1703 PA1712

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2353 DUAL N-CHANNEL MOSFET FOR SWITCHING OUTLINE DRAWING Unit: mm DESCRIPTION The μ PA2353 is a Dual N-channel MOSFET designed for Lithium-Ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection


    Original     		PDF PA2353 PA2353

    PA1754

    Abstract: PA1754G
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1754 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING Unit : mm DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for Li-ion battery applications 8 5 1 ; Source 1 2 ; Gate 1


    Original     		PDF PA1754 PA1754 PA1754G

    PA1715

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1715 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.


    Original     		PDF PA1715 PA1715G PA1715

    PA1715

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1715 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.


    Original     		PDF PA1715 PA1715G PA1715

    CHMC IC

    Abstract: chmc chmc sh D6002 wwvb CHMC receiver ST CHN 230
    Text: Silicore RADIO CONTROLLED RECEIVER IC DESCRIPTI ON D6002 O ut li ne D ra wi ng Th e D6 00 2 i s a bi po la r in teg r ate d str aig h t th r ou g h r ec eiv er c ir cu it in th e f r equ en cy r an ge f r om 40 k Hz u p t o 2 00 kH z w it h A S K m od u la tio n .


    Original     		PDF D6002 CHMC IC chmc chmc sh D6002 wwvb CHMC receiver ST CHN 230

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ NEC BiCMOS INTEGRATED CIRCUIT uPC1933 DC-DC CONVERTER CONTROL IC DESCRIPTION The ^¡PC1933 is an IC that controls a low-voltage Input DC-DC converter. This IC Is suitable for an operation with 3-V, 3.3-V Input or a lithium ion secondary battery Input, because the minimum operating supply voltage Is 2.5 V.


    OCR Scan     		PDF uPC1933 PC1933 13690EJ2V

    FTG 1087 S

    Abstract: aot 127 D17108 D1710S 17p107 ZC07 UPD 552 C sje 607 TK 9107 ltg 551
    Text: M O S jfc ît [lE § M O S Integ rated C ircu it / ¿ 4 ti-y h ° ->> ï'Jls?- 7 7"* v - f i ' P P D 1 7 1 I 'D - 7 A i t f c 1 7 K 7 “ * r ? f - ^ è Î R f f l L ’0 ' £ f c ft, 5 y ^ ^ ’S T i b T ' t ' o 1 '^ T i 0 ^ r ^ î i l 6 t '- y h 1 £ t L T v> £ 1 " 0


    OCR Scan     		PDF uPD17108 FTG 1087 S aot 127 D17108 D1710S 17p107 ZC07 UPD 552 C sje 607 TK 9107 ltg 551

    BUX 127 VDO

    Abstract: 7ROM LM082 ABB BOD 1-17 r 7136a sga 0552 KRY 112 89 1-01 UH1 GW 9n jln4
    Text: M O S In te g ra te d C ircuit PD17136A A1 /iPD17136A(A1) li, 8 t ' 7 hA/D3>A'-i> SS, , 2-f v f f i g ( 3 S1-f 7-Jl,) , AC-te'n-?n*fêtH 0 • U-b7 h !S , v U ^ JI- • < > 5 7 x - ^ ê r t i ® U T i , '5 4 t '7 h • •>>'7;U5i 7 y * 7 < ^ P 3 > h P - 7 T t,


    OCR Scan     		PDF uPD17136A /iuPD17136A PD17136A 17P136A PD17134AÌ BUX 127 VDO 7ROM LM082 ABB BOD 1-17 r 7136a sga 0552 KRY 112 89 1-01 UH1 GW 9n jln4

    cd 6283 cs

    Abstract: cd 6283 ic ic cd 6283 cd 6283 2SJ134 d 6283 ic IC tl 082 cn TEA-509 IC cd 6283 cs
    Text: MOS M O S Field Effect P o w e r Transistor p 2 S J1 3 4 i , P * -v MOS <? \\\ h (•- J : ó x * > t i t t / i ; <, w / ^ f « k, — MOS F E T x ï 4 / ^ v f-> 7 î v VET X , 5 V ^1),'^; I C > i i x t f , t+s• o M O CO * - ? . t v % 10.6 MAX. 10.0 , 0 3.6±0.2


    OCR Scan     		PDF 2SJ134 cd 6283 cs cd 6283 ic ic cd 6283 cd 6283 2SJ134 d 6283 ic IC tl 082 cn TEA-509 IC cd 6283 cs

    mec crystal oscillator 1 MHz 4 pins

    Abstract: MS122125
    Text: NEC * 9. /•¿PP7SP03Q8Y ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS Ta = 25°C Parameter Supply voltage Input voltage Symbol Test Conditions Voo Ratings Unit -0 .3 to +7.0 V V pp -0 .3 to +13.5 V AV ref —0.3 to V do + 0.3 V AVss -0 .3 to +0.3


    OCR Scan     		PDF PP7SP03Q8Y P00-P05, P10-P17, P25-P27, P30-P37, P70-P72, P80-P87, P90-P97, P100-P103, P110-P117, mec crystal oscillator 1 MHz 4 pins MS122125

    NEC Ga FET marking Rf

    Abstract: nec gaas fet marking
    Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION N E76184B is a N-channel GaAs MES FET housed in ce­ ram ic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity.


    OCR Scan     		PDF NE76184B NE76184B NE76184B-T1 NE76184B-T1A IR30-00 NEC Ga FET marking Rf nec gaas fet marking

    LT 5251

    Abstract: L30C uPD17202A AS1720 DC-7AP IC-8110 plj1
    Text: M O S Î& S I0 S& M O S In te g ra ted C ircuit ï /V T Z t ¿ ¿ P D 1 7 P 2 2 A L C D z iv h a — h 'Z iv b n — 7 4 AìPD17P202A l i , ^ P D 1 7 2 0 2 A C O [^ ^ X ^ R O M £ 7 > • ^ ^ A PROM t i ¿¿PD17P202A t i , jl- LT W z U r o ^7 * |^ n ar t t ' t 0


    OCR Scan     		PDF uPD17P202A uPD17202A O//PD17202A PD17P202AGF-001-3BE PDI7P202AGF-002-3BE PD17P202AGF-003-3BE PlJ15S5# LT 5251 L30C AS1720 DC-7AP IC-8110 plj1

    Untitled

    Abstract: No abstract text available
    Text: DOD-H-4 5 8 6 T F T G Type No. 2 O 6 cm S L O F L I\T I _ S < 1 ]R E G L 4 O - I F 4 C D S M A O D U G S 3 — 4 type „ "V" G I O A T T I O N L 2 1/ao E 4 A. S P R E L I MI NARY Rev. 4 This document is preliminary. Al l informations in t h i s document a r e s u b j e c t to change without p r i o r not i ce.


    OCR Scan     		PDF b4E7525 GGbb313 105x10. DF9M-31S-1R 16CLK 48CLK 96CLK 48CLK( Q0bb334

    DC7P

    Abstract: JLH 94 V0 PD27C256 MLT 22 452 NEC FVD 817 CN PD78P218A 9w cfl circuit DM 0265 R nec k 813
    Text: M O S £MXIH% M O S In te g ra te d C irc u it //P D 7 8 P 2 1 8 A /¿PD78P218A J, 78K/II •> U -X '(7 S nnnT , ¿¿PD78218A CDv * ? ROM & 9 > • i : I ? M / : 8 t '7 « > , v X x A M f~ • ->> :50U ^ -y 7° • f g B t O T r f f f i f f l f c <£ A PROM i


    OCR Scan     		PDF uPD78P218A 78K/II uPD78218A PD78218A-tfTf' IEM-755 IEU-754 PD78214-y-7 PD78218A DC7P JLH 94 V0 PD27C256 MLT 22 452 NEC FVD 817 CN PD78P218A 9w cfl circuit DM 0265 R nec k 813

    Untitled

    Abstract: No abstract text available
    Text: NEC ¿¿PP75P4308 m b 4 2 75 25 QOfiôSTH 123 • MS-DOS is a trademark of Microsoft Corporation. IBM DOS, PC/AT, and PC DOS are trademarks of International Business Machines Corporation. The export of this product from Japan is regulated by the Japanese government. To export this product may be prohibited


    OCR Scan     		PDF PP75P4308 b427525 00flflfc

    TFK 526

    Abstract: msc 5511 d17010gf sol 4011 be pd1701 ptv 1444 IJ40 AF53 ti77
    Text: 7 s— % • V — h S / Ë M o s ü s s m is M O S In te g ra te d C ircuit ft P ^ IW H F M , D 1 MWg PLLÜ >$§& v > ir y ° 'J v > ^ V l/5 1 'y ~ f • v < ^ p 7 1 G F - 1 1 < if, IF *^> £l*3lÌ z i > H P D17010G F-011 té, EWflOTFM, MW, L W A ''S ff P Ïffë & P L L Ü të S fcv


    OCR Scan     		PDF D17010G F-011 TFK 526 msc 5511 d17010gf sol 4011 be pd1701 ptv 1444 IJ40 AF53 ti77

    d7227g

    Abstract: CJ910 LCD 8x40 UPD7227 PD7227 D7227G-11 d7227 pd7225 MPD7227 LCD DOTS
    Text: IV O S " < 1 E }iPD7225 LCD 7/14 Segment Controller/Driver C D E S C R IP T IO N T h e ^ P D 7 2 2 5 is a p r o g r a m m a b l e pe rip h e ra l device c o n t a i n i n g all th e c i r c u i t r y i neces sary fo r in t e r f a c in g a m ic r o p r o c e s s o r to a w i d e v a r i e t y o f a l p h a - n u m e r i c L i q u i d


    OCR Scan     		PDF uPD7225 iPD7227 64-Pin d7227g CJ910 LCD 8x40 UPD7227 PD7227 D7227G-11 d7227 pd7225 MPD7227 LCD DOTS

    LEM LC 500-S

    Abstract: KL SN 102 94v SCR M21C STM CL-70 scr ky 202 TFK S 417 T LX 2272 fcf - 4 94v - 0 _ 1 2ty nte tfk 914
    Text: M O S S * l5 ]ï& M O S Integrated Circuit PD17010 7 " '- f Jls • i F 4^ 7 — — >*f • h • '> > ? V =3- 7 7 ° * 7 ^ □ □ > h □ - ^ //P D 1 7 0 1 0 f i , x - i v ? J U ••J-D - — - > ? ' • 4 t'-y i- • ■> > 'y 7° C M O S v - i ÿ - p z i > h □ — -ÿT 'T o


    OCR Scan     		PDF uPD17010 LEM LC 500-S KL SN 102 94v SCR M21C STM CL-70 scr ky 202 TFK S 417 T LX 2272 fcf - 4 94v - 0 _ 1 2ty nte tfk 914

    sdc 603

    Abstract: h s 772 je p 2SK2479 MP-25 D1027
    Text: h 7 > y '7 $ M O S Field Effect T ran s is to r 2SK2479 M OS FET x - r v u ^ x / m s 2SK24791ÎN5L + ^ J H É S /\or7 - MOS FETI?, * -f -y 51 > # tlT is U -f -y 51 > ÎS O f f - h B E E ± 3 0 V ÎS IŒ T 'fo O Î S A ^ S m T '- T o C is s = 4 8 5 p F ii*


    OCR Scan     		PDF 2SK2479 2SK24791Ã 485pFii* O-220AB MP-25 O-220) D10271JJ1V0DS00 sdc 603 h s 772 je p 2SK2479 MP-25 D1027

    F2HD

    Abstract: IC-8303 54IH KT 203A IBM 7HY upd17203 PD17P203A C349 PD17204
    Text: i. i i IK N E C ^ ^ M O S S Î m [US& M O S In teg rated C ircu it //PD 1 7 P 2 0 3 A , 1 7 P 2 0 4 3 7 ^ ra m , "71*1/^ «; ^e — h - = i > h n - 7 f f l 4 ti'y h n —^ ? ROM £ V > • 9 4 A PRO M r l l } | .« P D 1 7 P 2 0 3 A i //P D 1 7 2 0 3 A ¿0, /¿ P D 1 7 P 2 0 4 ! i .« P D 1 7 2 0 4


    OCR Scan     		PDF uPD17P203A uPD17203A uPD17P204 uPD17204 //PD17P203A PD17203A PD17P204 PD17204 /iPD17P203A) F2HD IC-8303 54IH KT 203A IBM 7HY upd17203 PD17P203A C349 PD17204

    c3478

    Abstract: 2Sc3478 y 3f
    Text: y ' > y = i > Silicon T ra n sisto rs 2 S C 3 4 7 8 ,3 4 7 8 A # -Ç -fô o ü f f i t t o V ceo 180 V /2 0 0 V (2 S C 3 4 7 8 /2 S C 3 4 7 8 A : : mm) 5 . 2 MAX. o hFE « » i M W - i i t i T ^ t t o O / J ^ - c - ^ Î l ^ ^ Ë ^ o : 0 .7 5 W P t o 2 S A 1 3 7 6 /2 S A 1 3 7 6 A t ? > 7°<) 9 y ?


    OCR Scan     		PDF 2SC3478 2SC3478A c3478 2Sc3478 y 3f

    lwm 1602 d

    Abstract: PR101 N044 PAW k-5 J2JF cd7y FM11 RF 08 ks-49 msc sdf TP1Y
    Text: M O S » » 0 S& M OS Integrated Circuit j u P D FM, MW, 1 7 1 2 G F - 0 5 2 # tt m P L L J I 3 ? J i§ & > ' h P ~ 7 / ¿ P D 1 7 0 1 2 G F - 0 5 2 ( i : £ t £ # & J f c < & P L L J i & & v > ^ i M i f ; £ 5 £ F M f MW , L W 5 ^ J i f c C M O S LSI


    OCR Scan     		PDF OAM77 lwm 1602 d PR101 N044 PAW k-5 J2JF cd7y FM11 RF 08 ks-49 msc sdf TP1Y