81E TRANSISTOR
Abstract: 2SC3282 2SC3282A NEC J 302 2SC3283A 2SC3283 J349 J475 NEM080481-12 NEM081081-12
Text: NEC/ CALIFORNIA NEC SbE ]> • b4B7414 0002552 22b — CLASS C, 800-960 MHz, 12 VOLT POWER TRANSISTOR INECC \ ' Z Z -I s NEM080481-12 NEM081081-12 NEM082081B-12 NEM084081B-12 FEATURES DESCRIPTION AND APPLICATIONS • LOW OPERATING VOLTAGE: 13.5 V NEC’s NEM0800 series of NPN epitaxial UHF power
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b427414
0002SS2
NEM080481-12
NEM081081-12
NEM082081B-12
NEM084081B-12
NEM0800
NEM080481E-12
NEM081081E-12
81E TRANSISTOR
2SC3282
2SC3282A
NEC J 302
2SC3283A
2SC3283
J349
J475
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2SC2558
Abstract: 2SC2558K 2SC2559K ne0800 2SC2850K 2SC2850 2SC2559 bM274m NE080190 NE080490
Text: NEC/ NEC b M 2 7 4 m GQOESa6! ÔTS » N E C C 5bE D CALIFORNIA CLASS C, 860 MHz, 12 VOLT POWER TRANSISTOR NE0800-12 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW OPERATING VOLTAGE Vcc = 13.5 V NEC’s NE0800 series of NPN epitaxial UHF power transistors
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bM274m
NE0800-12
NE0800
DG0E54E
NE0801
NE0804
NE0810
NE080190
2SC2558
2SC2558K
2SC2559K
2SC2850K
2SC2850
2SC2559
NE080490
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PA101B
Abstract: PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00
Text: Application Note HIGH FREQUENCY NPN TRANSISTOR ARRAYS µPA101 µPA102 µPA103 µPA104 Document No. P10944EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) Printed in Japan 1995, 1999 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
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PA101
PA102
PA103
PA104
P10944EJ2V0AN00
PA101B
PA103
PA104
MICRO-X TRANSISTOR MARK Q6
4 npn transistor ic 14pin
upa101g
PA102B
UPA101
P10944EJ2V0AN00
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2SC1449
Abstract: S10ms
Text: NEC SILICON POWER TRANSISTOR ELEC T R O N DEVICE 2SC 1449 AF POWER AMPLIFIER AND RF POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC1449 is an NPN general purpose transistor designed for use in audio and radio frequency power amplifiers.
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2SC1449
2SC1449
S10ms
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2sC4703
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4703 MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage V ce = 5 V . This low distortion
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2SC4703
2SC4703
OT-89)
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2SC107
Abstract: 2SC1070
Text: NEC NPN SILICON TRANSISTORS ELECTRON DEVICE DESCRIPTION 2SC1070 1 , 2SC1070(2) The 2SC1070(1) is specifically designed for UHF RF amplifier applications. The 2SC1070(2> is specifically designed fo r UHF mixer applications. They feature high power gain, low noise
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2SC1070
2SC107
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2SC4087
Abstract: 2SC4090 NE73439 NE73439B
Text: NEC/ 5bE D CALIFORNIA NEC b427414 00024btì b4T • N E C C T - 'S l- is NPN SILICO N GENERAL PU RPO SE TRANSISTO R NE73439 NE73439B OUTLINE DIMENSIONS FEATURES • H IG H G A IN BA N D W ID T H P R O D U C T : Units in mm OUTLINE 39 (SOT-143) 2.0 GHz (TYP)
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b457414
NE73439
NE73439B
NE73439B
2SC4087
2SC4090
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4 ghz transistor
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC NPN SILICON TRANSISTOR NE688M03 OUTLINE DIMENSIONS Units in mm FEATURES • • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance
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NE688M03
NE688M03
4 ghz transistor
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC NPN SILICON TRANSISTOR NE688M03 FEATURES • OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance
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NE688M03
NE688M03
24-Hour
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2SC1070
Abstract: s parameters RF NPN POWER TRANSISTOR 100MHz Tma UHF
Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC1070 B RF AMP. FOR UHF TV TUNER NPN SILICON TRANSISTOR DISK MOLD The 2SC1070(B) is specifically designed fo r UHF RF amplifier PACKAGE DIMENSIONS (Unit : mm) applications. The 2SC1070(B) features high power gain, low
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2SC1070
s parameters RF NPN POWER TRANSISTOR 100MHz
Tma UHF
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2SC2758
Abstract: No abstract text available
Text: NEC SILICON TRANSISTORS ELECTRON DEVICE 2SC2758,2SC2758R RF AM P. FOR UHF TV TUNER NPN SILICON TRANSISTOR The 2SC2758, 2SC2758R are specifically designed fo r U HF RF am p lifie r PACKAGE DIMENSIONS applications. The 2SC2758 and 2SC2758R feature high power gain, low
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2SC2758
2SC2758R
2SC2758,
2SC2758R
25x5x0
2758R
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CHIP transistor 348
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC NPN SILICON TRANSISTOR NE680M03 FEATURES • OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance
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NE680M03
NE680M03
NE680
CHIP transistor 348
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NEC 1357
Abstract: 1357 transistor NEC nec transistor 1357 transistor NEC 1357
Text: PRELIMINARY DATA SHEET NEC NPN SILICON TRANSISTOR NE688M03 FEATURES • OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance
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NE688M03
NE688M03
24-Hour
NEC 1357
1357 transistor NEC
nec transistor 1357
transistor NEC 1357
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PDF
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K 2645 transistor
Abstract: NEC 9724 transistor LC 7011 E 9547
Text: PRELIMINARY DATA SHEET NEC NPN SILICON RF TRANSISTOR NE662M04 FEATURES_ • HIGH GAIN BANDWIDTH: f r = 22 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 19.5 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE:
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OT-343
NE662M04
E662M04
NE662M04
11l--
24-Hour
K 2645 transistor
NEC 9724 transistor
LC 7011
E 9547
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / ELECTRON DEVICE SILICO N TRAN SISTO R / ^ ^ 2SC4179 FM /A M RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DIMENSIONS in m illim eters • High G ain B a ndw idth P rodu ct: f j = 250 M Hz TYP.
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2SC4179
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2SC4179
Abstract: NF NPN Silicon Power transistor TO-3
Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC4179 FM /AM RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIALTRANSISTOR FEATURES PACKAGE DIMENSIONS in m illim eters • High Gain Bandwidth Product: f j = 250 MHz TYP. . ± 2 1 0.1 • Low Output Capacitance: CQb = 1.8 pF TYP.
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2SC4179
2SC4179
NF NPN Silicon Power transistor TO-3
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e981-08
Abstract: 2SC1658 2SC1656 NE98100 NE98108 NE98141 NE981
Text: NEC/ CALIFORNIA SEC SbE D b 4 2 7 4 m 0002525 2Tfl « N E C C NE98100 NE98108 NE98141 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H G AIN B A NDW IDTH PRO DU CT: fr = 7 GHz The NE981 series of NPN silicon transistors is designed for mi
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b4274m
NE98100
NE98108
NE98141
NE981
NE98141
chip09
e981-08
2SC1658
2SC1656
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PS2705-4
Abstract: PS270S4 PS2705
Text: NEC HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP MULTI OPTOCOUPLER PS2705-1 PS2705-2 pS2705-4 FEATURES_ DESCRIPTION • PS2705-1, -2 and -4 are optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor.
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PS2705-1
PS2705-2
pS2705-4
PS2705-1,
PS2705-4
24-Hour
PS270S4
PS2705
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2SC1070
Abstract: 9011 npn
Text: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCRIPTION 2 S C 1 0 7 0 B The 2SC1070(B) is specifically designed for UHF RF amplifier applications. The 2SC1070(B) features high PACKAGE DIMENSIONS power gain, low noise, and excellent forward AGC in m illim e te rs (inches)
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2SC1070
2SC1070
9011 npn
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2sc2026
Abstract: al 232 nec transistor 2sc2026
Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC2026 RF LOW NOISE AM PLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Suitable fo r low noise a m p lifie r in the V H F to UH F band. in m illim eter inches 5.2MAX. FEATURES NF 3.0dB TYP. @f = 500M Hz
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2SC2026
500MHz
2sc2026
al 232 nec
transistor 2sc2026
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k 3531 transistor
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA826TF OUTLINE DIMENSIONS Units FEATURES • • • LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: • SMALL PACKAGE STYLE: in mm P ackage Outline T S 06 (Top View)
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UPA826TF
NE685
UPA826TF
for-27
UPA826TF-T1
24-Hour
k 3531 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: NEC ELECTRON DEVICE SILICON TRANSISTOR / ^ ^ ^ ^ ^ ^ _ 2S C 1009A F M /A M RF AM PLIFIER, M IXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • High Gain B a ndw idth P rodu ct: f j = 250 M H z TY P.
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / SILICON TRANSISTOR _ / 2SC2780 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SC2780 is designed fo r audio frequency pre a m p lifie r app lica tion, especially in H y b rid Integrated Circuits, FEATURES PACKAGE DIMENSIONS
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2SC2780
2SC2780
A1173
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PS2002B
Abstract: NEC photo coupler PS2002 NEC PS2002B transistor 2002b PS2002B NEC PS200-2 nec reed relay
Text: NEC PHOTO COUPLER ELECTRON DEVICE PS2002B PHOTO COUPLER INDUSTRIAL USE - NEPOC SERIES - DESCRIPTION The PS2002B is an o p tic a lly coupled isolator containing a GaAsP lig h t em ittin g diode and an NPN silicon da rlingto n- connect ed phototransistor.
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PS2002B
PS2002B
NEC photo coupler
PS2002
NEC PS2002B
transistor 2002b
PS2002B NEC
PS200-2
nec reed relay
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