44-PIN
Abstract: HS350 VP215 6 GHZ nec
Text: DATA SHEET BIPOLAR ANALOG + DIGITAL INTEGRATED CIRCUIT µPB1009K REFERENCE FREQUENCY 16.368/16.384/19.2/14.4/26 MHz, 2ndIF FREQUENCY 4.092/2.556 MHz RF/IF FREQUENCY DOWN-CONVERTER + PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER DESCRIPTION The µPB1009K is a silicon monolithic IC developed for GPS receivers. This IC integrates a full VCO, second IF
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PB1009K
PB1009K
Hz/16
44-PIN
HS350
VP215
6 GHZ nec
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nec vt 575
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG + DIGITAL INTEGRATED CIRCUIT µPB1009K REFERENCE FREQUENCY 16.368/16.384/19.2/14.4/26 MHz, 2ndIF FREQUENCY 4.092/2.556 MHz RF/IF FREQUENCY DOWN-CONVERTER + PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER DESCRIPTION The µPB1009K is a silicon monolithic IC developed for GPS receivers. This IC integrates a full VCO, second IF
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PB1009K
PB1009K
Hz/16
nec vt 575
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receiver IC 14 MHz
Abstract: 44-PIN HS350 VP215
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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HS350
Abstract: NE696M01 VP215 K3140
Text: DATA SHEET BIPOLAR ANALOG + DIGITAL INTEGRATED CIRCUIT µPB1008K REFERENCE FREQUENCY 27.456 MHz, 2ndIF FREQUENCY 132 kHz RF/IF FREQUENCY DOWN-CONVERTER + PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER DESCRIPTION The µPB1008K is a silicon monolithic integrated circuit for GPS receiver. This IC is designed as double conversion
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PB1008K
PB1008K
36-pin
HS350
NE696M01
VP215
K3140
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HS350
Abstract: NE696M01 VP215 K3140
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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MC-458CA727
Abstract: MC-458CA727EFA-A75 MC-458CA727PFA-A75 PD45128163
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CA727 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE ★ Description The MC-458CA727EFA and MC-458CA727PFA are 8,388,608 words by 72 bits synchronous dynamic RAM module on which 5 pieces of 128M SDRAM : µPD45128163 are assembled.
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MC-458CA727
72-BIT
MC-458CA727EFA
MC-458CA727PFA
PD45128163
MC-458CA727
MC-458CA727EFA-A75
MC-458CA727PFA-A75
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PB6350
Abstract: ECL-10KH 208PGA L100K BA17T
Text: N E c ELECTRONICS INC bM27SaS 0011677 D J~~ 6427525 N E C ELECTRONICS INC 91D 11877 D T-42-IH3 E C L -3 A b ip o la r g a te a r r a y s NEC Electronics Inc. PRELIM INARY INFORMATION June 1987 D escription Features The E C L-3 A series consists of two ultra-high-speed
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bM27SaS
T-42-IH3
4000-gate
uPB6340
5000-gate
uPB6350
ECL-10KH,
L100K,
b427525
ECL-100K
PB6350
ECL-10KH
208PGA
L100K
BA17T
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2SK736
Abstract: No abstract text available
Text: _ 525 N E C N E C ELECTRONICS INC EL EC TR ONI CS /j INC_ 98D 18908 D Tfi D e | ^ 57555 □□IflTOfl ñ N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK736 DESCRIPTION FEA TU R ES The 2SK736 is N-Channel MOS Field Effect Power Transistor
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R427525
2SK736
2SK736
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dd417
Abstract: No abstract text available
Text: 'd a t a b427525 GÜM17SE ST2 « N E C E NEC sh eet MOS INTEGRATED CIRCUIT f juPD42S4260L, 424260L 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The /¿PD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs with optional fast page mode
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b427525
M17SE
juPD42S4260L
424260L
16-BIT,
PD42S4260L,
424260L
/1PD42S4260L.
PD42S4260L
//PD424260L
dd417
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ELECTRON DEVICE UPD3733 2088-BIT CCD LINEAR IMAGE SENSOR WITH PERIPHERAL CIRCUIT . The pPD3733 is a 2088-bit high sensitivity CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal.
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UPD3733
2088-BIT
pPD3733
PD3733
2088-bhen
jiPD3733
PD3733
b427525
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454CA726 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454CA726 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 5 pieces of 64M
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MC-454CA726
72-BIT
MC-454CA726
uPD4564163
M168S-50A95
MC-454CA726LFA]
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Untitled
Abstract: No abstract text available
Text: P R E LIM IN A R Y DATA S H E E T NEC MOS INTEGRATED CIRCUIT MC-422000LAB72F 3.3 V OPERATION 2M -WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-422000LAB72F is a 2 097 152 words by 72 bits dynamic RAM module on which 9 pieces of 16M DRAM ( /xPD 4217800L) are assembled.
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MC-422000LAB72F
72-BIT
MC-422000LAB72F
4217800L)
422000AB72-60
5752s
LM27555
005a3i
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d5205g
Abstract: No abstract text available
Text: DATA SHEET NEC / ELECTRON DEVICE MOS INTEGRATED C IR C U IT / ¿ ¿ P D 5 2 5 C M O S ANALOG M ULTIPLEXER DESCRIPTION The ¿¿PD5205 is 8-channel C-MQS analog m u ltip le x e r. A single-pole 8-position m ode and double-pole 4-position m ode are settable by 8 /4 te rm in a l.
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uPD5205
-50-300B
d5205g
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Untitled
Abstract: No abstract text available
Text: DATA SHEET M O S INTEGRATED CIRCUIT MC-42S2000LAB32S SERIES 2 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The M C -4 2S2000LA B 32S series is a 2,097,152 w ords by 32 bits dynamic R A M m odule (Small Outline D IM M ) on which 4 pieces of 16 M DRA M : iiPD42S17800L are assembled.
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MC-42S2000LAB32S
32-BIT
2S2000LA
iiPD42S17800L
72PIN
M72S-50A1-2
b4S752S
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574 nec
Abstract: ft 4a
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT ¿¿P D 4 2 1 8 0 5 1 M-BIT DYNAMIC RAM 128K-WORD BY 8-BIT, HYPER PAGE MODE EDO Description The ¿¿PD421805 is a 131,072 words by 8 bits CMOS dynamic RAM with optional hyper page mode (EDO). Hyper page mode (EDO) is a kind of the page mode and is useful for the read operation.
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128K-WORD
uPD421805
PD421805
28-pin
PD421805-25-A
J/PD421805-30-A
/iPD421805-25
iPD421805-30
MPD421805-35
574 nec
ft 4a
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NEC C1875
Abstract: UPC1875CT UPC1875 L427S2
Text: PRELIMINARY DATA SHEET NEC BIPOLAR ANALOG INTEGRATED C IR C U IT • ELECTRON DEVICE b4E752S 004^3*15 ÔÔ3 « N E C E ju PC1875 STEREO-ONLY US MTS DECODER The ¿iPC1875 is an LSI used for stereo-only US MTS Multi Channel Television Sound . The ¿/PC1875 includesall functions
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b4E752S
uPC1875
iuPC1875
/uPC1875
/iuPC1875,
izPC1871)
b42752S
GG41421
30PIN
NEC C1875
UPC1875CT
L427S2
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4264800, 4265800 64 M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, FAST PAGE MODE D e s c rip tio n The /¡P D 42 6480 0,4265800 are 8,388,608 words by 8 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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PD4264800,
32-pin
/iPD4264800-A70
//PD4265800-A70
//PD4265800-A80
P32LE-400A
0-20i8:
b457525
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424800-70
Abstract: 42s4800 2716D nec 42s4800 UPD 552 C 424800-80 NEC D 553 C 574 nec uPD424800 nec 2716d
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / ¿¿PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The J2PD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD42S4800
uPD424800
J2PD42S4800,
mPD42S4800
28-pin
/iPD42S4800-70,
/iPD42S480Q-8Q,
VP15-207-2
424800-70
42s4800
2716D
nec 42s4800
UPD 552 C
424800-80
NEC D 553 C
574 nec
nec 2716d
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The ¿iPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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PD42S4800,
iPD42S4800,
PD42S4800
28-pin
PD42S4800-70,
VP15-207-2
L42752S
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Untitled
Abstract: No abstract text available
Text: DATA SHEET M O S INTEGRATED CIRCUIT /1PD42S4800, 424800 4 M-BIT DYNAM IC RAM 512 K-WORD BY 8-BIT, FA ST PAGE M ODE Description The /¿PD42S4800, 424800 are 524,288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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/1PD42S4800,
PD42S4800,
jiPD42S4800
28-pin
/IPD42S4800-60,
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454CA726 4M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454CA726 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 5 pieces of 64M
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MC-454CA726
72-BIT
MC-454CA726
uPD4564163
C-454CA726-A80
-454C
A726-A10
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nec A2C
Abstract: kmxx nec vt 575
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT _ / ¿ P D 4 2 1 1 6 5 1 M-BIT DYNAMIC RAM 64K-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D escription The î î PD421165 is a 65,536 words by 16 bits CMOS dynamic RAM with optional hyper page mode (EDO).
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64K-WORD
16-BIT,
uPD421165
/iPD421165
44-pin
40-pin
/jPD421165-25-A
pPD421165-30-A
pPD421165-25
jPD42
nec A2C
kmxx
nec vt 575
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nec A2C
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT _ ¿ ¿ P P 421165 1 M-BIT DYNAMIC RAM 64K-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The ¿¿PD421165 is a 65,536 words by 16 bits CMOS dynamic RAM with optional hyper page mode (EDO).
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64K-WORD
16-BIT,
uPD421165
PD421165
44-pin
40-pin
1PD421165-25-A
/iPD421165-30-A
/iPD421165-25
/jPD421165-30
nec A2C
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Untitled
Abstract: No abstract text available
Text: I • b 4 2 7 5 5 5 D O M l ^ 5 7 b M N E C E À T A NEC S H E E T MOS INTEGRATED CIRCUIT /¿PD42S4900, 424900 4 M BIT DYNAMIC RAM 512 K-WORD BY 9-BIT, FAST PAGE MODE DESCRIPTION ★ The /iPD42S4900, 424900 are 524 288 w ords by 9 bits dynam ic CMOS RAMs. The fast page m ode cap ab ility
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PD42S4900,
/iPD42S4900,
PD42S4900
28-pin
bMg75a5
PD42S4900G5,
424900G5
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