NSP5665
Abstract: sat 1205
Text: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *
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2N1479
2N1480
2N1481
2N1482
2N1483
2N1484
2N1485
2N1486
O-254
NSP6340
NSP5665
sat 1205
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NES3716Z
Abstract: No abstract text available
Text: NES3716Z NPN SILICON POWER TRANSISTOR 10 A M P E R E P O W E R T R A N S IS T O R NPN S ILIC O N • • • • Medium Speed Switiching Amplifier Excellent Safe Operating Area Total Switching Time @ 3A, 1.15|is M A X IM U M R A T IN G S R a tin g C o lle c to r-E m itte r V oltage
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NES3716Z
NES3716Z
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Untitled
Abstract: No abstract text available
Text: Back to Bipolar Power Transistors NES3716Z NPN SILICON POWER TRANSISTOR • • • • 10 AMPERE POWER TRANSISTOR NPN SILICON Medium Speed Switiching Amplifier Excellent Safe Operating Area Total Switching Time @ 3A, 1.15|is MAXIMUM RATINGS Rating Collector-Emitter Voltage
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NES3716Z
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Untitled
Abstract: No abstract text available
Text: T im e s ? ^PP NES3716Z ^NEW ENGLAND SEMICONDUCTOR NPN SILICON POWER TRANSISTOR • • • • 10 AMPERE POWER TRANSISTOR NPN SILICON Medium Speed Switching Amplifier Excellent Safe Operating Area Total Switching Time @ 3A, 1.15|is MAXIMUM RATINGS Rating
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NES3716Z
3716Z
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