TG12

Abstract: SMBJ58A
Contextual Info: 4 3 SS-7188S-A-NF SS-7188S-A-NF DATA2 RT1 75 RT2 75 RT3 75 RT4 75 RT5 75 RT6 75 RT7 75 RT8 75 SPARE2 RV1 SD4-90 OPT RV2 SD4-90 OPT RV3 SD4-90 OPT CT1 CT2 CT3 CT4 0.01uF 0.01uF 0.01uF 0.01uF RV4 SD4-90 200V 200V 200V 200V 0805S 0805S 0805S 0805S OPT CG2 1000pF

pin diagram of ic 7494

Abstract: SBFP540M 74945 cbc 547
Contextual Info: SBFP540M Ordering number : ENN7494A NPN Epitaxial Planar Silicon Transistor SBFP540M UHF to C Band Low Noise Amplifier, Low Phase Noise Oscillation Applications Features • • • • Low noise : NF=0.9dB typ f=1.8GHz . High cut-off frequency : fT=20GHz typ (VCE=1V).

pin diagram of ic 7493

Abstract: ic 7493 pin function of ic 7493 7493 IC 7493 pc data sheet IC 7493 TRANSISTOR cBC 415 marking MD 7493 7493 APPLICATION
Contextual Info: Ordering number : ENN7493 SBFP450M SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor SBFP450M High-Frequency Medium-Output Amplifier, RF Driver / Power Amp Applications Features • • • • Low noise : NF=1.25dB typ f=1.8GHz . High cut-off frequency : fT=24GHz typ

npn UHF transistor 2N5179

Contextual Info: 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB max @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 • 1 Characterized with S-Parameters

Contextual Info: Preliminary MMA001AA DC-20GHz, 16dB Gain Low-Noise Wideband Amplifier Features • Excellent combination of wide bandwidth, low noise and high associated gain • 1.7dB NF with >15.5dB gain at 10GHz • Output IP3 ~26-29dBm • Input and output matched to 50Ω

Contextual Info: MMA001AA DC-22GHz, 16dB Gain Low-Noise Wideband Distributed Amplifier Features • Excellent combination of wide bandwidth, low noise and high associated gain • 1.7dB NF with >15.5dB gain at 10GHz • Output IP3 ~26-29dBm • Input and output matched to 50Ω

74945

Abstract: cbc 547 SBFP540M TRANSISTOR cBC 449 74948 26.701 pin diagram of ic 7494 811 0305 01 12 mje t 5029 74947
Contextual Info: SBFP540M Ordering number : ENN7494A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor SBFP540M UHF to C Band Low Noise Amplifier, Low Phase Noise Oscillation Applications Features • • • • Low noise : NF=0.9dB typ f=1.8GHz . High cut-off frequency : fT=20GHz typ (VCE=1V).

transistor NEC D 587

Abstract: transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1±0.1 • Low Voltage Use 1.25±0.1 • Low Cob : 0.9 pF TYP. Emitter to Base Voltage

NE38018 V68

Abstract: transistor NEC D 587 NE38018 NE38018-T1 NE38018-T2 VP15-00-3 37792
Contextual Info: PRELIMINARY DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm V67 , OIP3 = 23 dBm (V68) typ. at f = 2 GHz

FMM5702X

Abstract: FMM5702
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for

Contextual Info: BUZ 172 I nf ineon tachnologies SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type Vds b flDS on Package Ordering Code BUZ 172 -100 V -5.5 A 0.6 £2 TO-220 AB C67078-S1451-A2 Maximum Ratings Parameter Symbol Continuous drain current

TRANSISTOR nf 842

Abstract: D 843 Transistor transistor su 312
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ±0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz 1.25 ± 0.1 HIGH GAIN:

874 561 0 4V

Abstract: FMM5702 FMM5702X FUJITSU MMIC LNA
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for

TC236

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES Excellent Low NF in Low Frequency Band 2 .1± 0.1 Low Voltage Use 1.25±0.1 Low Cob : 0 .9 pF T Y P . Low Noise Voltage : 90 mV TYP.

874 561 0 4V

Abstract: FMM5702X FMM5702
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for

2N5179

Abstract: npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10

21134 015

Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
Contextual Info: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10

LB 1639

Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
Contextual Info: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SPACE QUALIFIED NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10m A FEATURES • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz 24 • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical a tf = 12 GHz

JESD51-7

Abstract: MABAES0029 MAX2029 MAX2031 MAX2031ETP MAX2039 MAX2041 911MHz
Contextual Info: 19-0248; Rev 1; 6/09 KIT ATION EVALU E L B AVAILA High-Linearity, 650MHz to 1000MHz Upconversion/ Downconversion Mixer with LO Buffer/Switch Features The MAX2031 high-linearity passive upconverter or downconverter mixer is designed to provide +36dBm IIP3, 7dB NF, and 7dB conversion loss for a 650MHz to

MAX2032

Abstract: tuned oscilator 1029-TC BPF filter rf JESD51-7 MABAES0029 MAX2029 MAX2039 MAX2041
Contextual Info: KIT ATION EVALU E L B AVAILA 19-4965; Rev 0; 9/09 High-Linearity, 650MHz to 1000MHz Upconversion/ Downconversion Mixer with LO Buffer/Switch Features The MAX2032 high-linearity passive upconverter or downconverter mixer is designed to provide +33dBm IIP3, 7dB NF, and 7dB conversion loss for a 650MHz to

Contextual Info: NEC ULTRA LOW NOISE PSEUDOMORPHIC HJ FET l>,co^ uu FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Voss 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: G a = 11.0 dB typical at f = 12 GHz m •

rf frequency oscilator tuned 2.3 ghz

Abstract: BPF filter rf JESD51-7 MABAES0029 MAX2029 MAX2031 MAX2031ETP MAX2039 MAX2041
Contextual Info: KIT ATION EVALU E L B AVAILA 19-0248; Rev 1; 6/09 High-Linearity, 650MHz to 1000MHz Upconversion/ Downconversion Mixer with LO Buffer/Switch Features The MAX2031 high-linearity passive upconverter or downconverter mixer is designed to provide +36dBm IIP3, 7dB NF, and 7dB conversion loss for a 650MHz to