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    NGB8206AN Search Results

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    NGB8206AN Price and Stock

    Rochester Electronics LLC NGB8206ANT4G

    IGBT, 20A, 390V, N-CHANNEL
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    DigiKey NGB8206ANT4G Bulk 32,020 1
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    Littelfuse Inc NGB8206ANT4G

    IGBT 390V 20A 150W D2PAK3
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    DigiKey NGB8206ANT4G Reel 800
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    Rochester Electronics LLC NGB8206ANSL3G

    IGBT
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    Littelfuse Inc NGB8206ANSL3G

    IGBT 390V 20A 150W D2PAK3
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    DigiKey NGB8206ANSL3G Tube 50
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    Littelfuse Inc NGB8206ANTF4G

    IGBT 390V 20A 150W D2PAK3
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    DigiKey NGB8206ANTF4G Reel 700
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    Find more NGB8206AN price and stock on Findchips.com

    NGB8206AN Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NGB8206ANSL3G On Semiconductor NGB8206 - TRANSISTOR IGBT, Insulated Gate BIP Transistor Original PDF
    NGB8206ANT4G On Semiconductor NGB8206 - TRANSISTOR 20 A, 390 V, N-CHANNEL IGBT, LEAD FREE, CASE 418B-04, D2PAK-3, Insulated Gate BIP Transistor Original PDF
    NGB8206ANTF4G On Semiconductor NGB8206 - TRANSISTOR IGBT, Insulated Gate BIP Transistor Original PDF

    NGB8206AN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    418B-04

    Abstract: GB8206
    Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8206N, NGB8206AN NGB8206N/D 418B-04 GB8206

    Untitled

    Abstract: No abstract text available
    Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8206N, NGB8206AN NGB8206N/D

    GB8206

    Abstract: NGB8206A NGB8206NG
    Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8206N, NGB8206AN NGB8206N/D GB8206 NGB8206A NGB8206NG

    GB8206

    Abstract: No abstract text available
    Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8206N, NGB8206AN NGB8206N/D GB8206