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    onsemi NGTB40N120IHRWG

    IGBT 1200V 80A 384W TO247
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    DigiKey NGTB40N120IHRWG Tube 31 1
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    Rochester Electronics NGTB40N120IHRWG 74 1
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    NGTB40N120IHRWG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NGTB40N120IHRWG On Semiconductor NGTB40N120I - IGBT 1200V 40A FS2-RC Induction Heating Original PDF

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    Abstract: No abstract text available
    Text: NGTB40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering


    Original     		PDF NGTB40N120IHRWG NGTB40N120IHR/D

    40N120IHR

    Abstract: No abstract text available
    Text: NGTB40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering


    Original     		PDF NGTB40N120IHRWG NGTB40N120IHR/D 40N120IHR