Untitled
Abstract: No abstract text available
Text: October 12, 2012 Nihon Dempa Kogyo Co., Ltd. President: Hiroshi Takeuchi Compact, low-profile, high-performance 920 MHz band SAW filter for HEMS appliances and smart meters developed Nihon Dempa Kogyo Co., Ltd. has developed a compact, high-performance 920 MHz band SAW
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WFC11B0922CG
WFD79C0925FG
WFC48C0924CF
924MHz
12MHz
WFD14C0925CG
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Untitled
Abstract: No abstract text available
Text: NEWS RELEASE Contact: Kazuhiko Hoshino NIHON DEMPA KOGYO CO., LTD. Phone: +81-3-5453-6736 e-mail: hoshino@ndk.com “New biomolecular interaction QCM analyzers NAPiCOS series with new twin sensor will be showcased at Pittcon 2012 NIHON DEMPA KOGYO CO., LTD will showcase its new biomolecular interaction analyzers, “NAPiCOS” with
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Untitled
Abstract: No abstract text available
Text: December 6, 2012 Hiroshi Takeuchi President & representative director Nihon Dempa Kogyo Co., Ltd. Development of compact light Crystal Sensor module detecting gravity, acceleration, declination, displacement with high sensitivity and wide dynamic range Nihon Dempa Kogyo Co., Ltd., a crystal device manufacturer, announces that the company
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000Gal
50kGal
001Gal
pp265-269,
Page57-61
JPY150
000/1set
50kGal)
H75mm
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Untitled
Abstract: No abstract text available
Text: September 24, 2014 Nihon Dempa Kogyo Co., Ltd. President: Hiroshi Takeuchi New product developed; Smaller VCXO 5.0 x 3.2 mm with high-frequency range and low phase noise, for base stations and optical network devices Nihon Dempa Kogyo Co., Ltd. (NDK) has developed a new compact high-performance
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NV5032SC,
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Untitled
Abstract: No abstract text available
Text: June 25, 2015 Nihon Dempa Kogyo Co., Ltd. Representative Director & Chairman of the Board, President and CEO Toshiaki Takeuchi Development of DuCULoN – an ultra-low-phase-noise crystal oscillator for high-end digital audio device master clocks Nihon Dempa Kogyo Co., Ltd. NDK has developed DuCULoN®*1 – an
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NH47M47LA
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Nihon Inter Electronics
Abstract: No abstract text available
Text: Safe Using on NIEC Products In the interest of product improvement, Nihon Inter Electronics Corporation NIEC reserves the right to change specifications without notice, and so use of the updated version of Date Book or Specifications and Catalog are requested.
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MB111
Abstract: marking JB SCHOTTKY BARRIER DIODE 25CC
Text: 10A120VTm150V Fully Molded similar to TO-220AC FSHS10A12 ft«» Nihon Inter Electronics Corporation Specification yT y i/ayh Construction Schottky Barrier Diode Application High Frequency Rectification 1 j ir—K MAXIMUM RATINGS Ta=25'C: Unless otherwise specified
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10A120VTM150V
O-22QAC
FSHS10A12
UL94V-0fi.
UL94V-0
MB111
marking JB SCHOTTKY BARRIER DIODE
25CC
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10a45
Abstract: marking WMM
Text: S BD Anode camman 10A 45V Tjw150V FRQS10A045 Fully Molded sim ilar to TO-22QAB ttíf# 0 * ^ Nihon Inter Electronics Corporation Specification. mm ^ Construction '> 3 y Schottky Barrier Diode Application High FVequenty Rectification MAXIMUM RATINGS Ta=25°C: Unless otherwise specified
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Tjw150V
TQ-220AB
FRQS10A045
FRQS10A045
20mVRMs
100kHz
UL94V-0ISÂ
UL94V-0
10a45
marking WMM
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FCQS30A045
Abstract: No abstract text available
Text: 30A 45V Tjw150V # y — h '= i* y SBD Fully Molded similar to TO-22QAB Cathode common FC Q S30A045 tt ti* Nihon Inter Electronics Corporation Specification ' > h -y h y T Hr— K Construction Schottky B arrier Diode Application H igh Frequency Rectification
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Tjw150V
O-22QAB
FCQS30A045
1181C
FCQS30Ar
UL94V-0I
UL94V-0
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TM 5503
Abstract: UCU20C20 co140 5S24
Text: 20A 200V 31ns Similar to TO-263 # y — Fast Recovery Cathode common UCU20C20 ttif* Nihon Inter Electronics Corporation Specification. mm fr d Construction Diffusion Type Silicon Diode iWi/ r I implication High Frequency Rectification MAXIMUM RATINGS T a= 2 5 t: Unless otherwise specified
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O-263
UCU20C20
III11IIM
c40-3
UL94V-0
UCU20Crj
TM 5503
UCU20C20
co140
5S24
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5A45V
Abstract: FSHS05A045 1331C FC7 marking
Text: 5A45VTm150V ' Ííj J'¡L Fully Molded similar to TO-220AC ' FSHS05A045 tttf* Nihon Inter Electronics Corporation Specification Construction '> 3 -y T Schottky Barrier Diode Application High Frequency Rectification fflìÉ ÿA Jr-Y MAXIMUM RATINGS Ta—25 C- Unless otherwise specified
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5A45V
Tjw150V
-220AC
FSHS05A045
1331C
FSHS05A045
25oCIVm
20mVRMs
100kHzlTypical
FC7 marking
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diode 1G8
Abstract: nihon diode 1G8
Text: 1A 8 0 0V Axial Lead Type 1 /4 : Type : 1 G8 Nihon Inter Electronics Corporation : I* Constraction: Axial Lead, Diffusion-type Silicon Diode : -«Sniffi Application : For General Use l ü ; * Æ f ê / Maximum Rating m / Voltage Ratings ia * f s Symbol
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11M0JU,
diode 1G8
nihon diode 1G8
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ci 4502
Abstract: ECT180
Text: 4A 35V Tjw150V 7¿Zfr n íZ h FSQS04A035 Fully Molded similar to TO-220AC ttfl» Nihon Inter Electronics Corporation Specification. Construction '> 3 * Schottky Barrier Diode Application High Frequency Rectification I I MAXIMUM RATINGS Ta=25cC: Unless otherwise specified
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35VTjw150V
FSQS04A035
50HzIESmffiKftÃ
FSQS04A035
20mVrms
100kHz
UL94V-0
ci 4502
ECT180
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l55a
Abstract: T0220AB
Text: # y ~ F = i^ e > - 8A 35VTjw150V S B D Fully Molded similar to TO-22QAB Cathode common FCQS08A035 tttis 0 * ^ f c ïtè tt Nihon Inter Electronics Corporation Specification. s' Construction ilii Application Schottky B arrier Diode H igh Frequency Rectification
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35VTjw150V
T0220AB
FCQS08A035
20mVRMs
100kHz
FCQS08A035
FCQS08Ar
UL94V-0
l55a
T0220AB
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FSQS15A045
Abstract: 118T
Text: 15A 45V Tjw150V Fully Molded simitar to TO-220 FSQ S15A 045 tti* * Nihon Inter Electronics Corporation Specification -y h yT Schottky B arrier Diode Application H igh Frequency Rectification • I K Construction MAXIMUM RATINGS Ta=25°C: U nless otherw ise specified
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Tjw150V
O-220
FSQS15A045
/l-50Hz
FSQS15Ar
UL94V-0
118T
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UCU20C30
Abstract: marking WMM UCU20C
Text: # y— Fast Recovery Cathode common 20A 300V 33ns UCU20C30 Similar to TO-263 i± m m Nihon Inter Electronics Corporation Specification. FRD Construction ff lìÉ Application Diflusion Type Silicon Diode High Frequency Rectification MAXIMUM RATINGS Ta=25°C: Unless otherwise specified
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O-263
UCU20C30
c40-3
UL94V-0
UCU20Crj
UCU20C30
marking WMM
UCU20C
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FCHS20A
Abstract: WH 1602 K FCHS20A045 RECT18
Text: 20A 45V Tjw150V Fully Molded similar to TO-220AB FCHS20A045 0 * ^ Nihon Inter Electronics Corporation Specification «5t 'y 3 y h Construction ff lii Application J iy Ç /iË fê y r^V K Schottky Barrier Diode rWijRliiSSIifliiffl High Frequency Rectification
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Tjw150V
O-220AB
FCHS20A045
20mVRMs
100kHz
FCHS20A045
FCHS20Ar
UL94V-0m
UL94V-0
FCHS20A
WH 1602 K
RECT18
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fcqs10a045
Abstract: 10a45 IMTIA
Text: SBD Cathode common 10A 45V Tjw150V Fully Molded similar to TO-22QAB FCQS10A045 Nihon Inter Electronics Corporation Specification. mm Construction v ' s y h y 7 y j Schottky B arrier Diode Application H igh Frequency Rectification k MAXIMUM RATINGS T a = 25°C U nless otherw ise specified
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10A45VTjw150t
TQ-220AB
FCQS10A045
UL94V-0
10a45
IMTIA
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DIODE w2x
Abstract: No abstract text available
Text: 15A 8 0 V Tjvt1 5 0 V Fully Molded sim ilar* TO-220 FSHS15A08 ttfl* 0 * ^ > $ —fc lté í± Nihon Inter Electronics Corporation Specification yr I Schottky Barrier Diode Application High Frequency Rectification ïK^CÆi'fê' I MAXIMUM RATINGS Ta=25°C: Unless otherwise specified
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80VTjw150V
O-220
FSHS15A08
FSHS15A08
20mVRMS
100kHz
FSHS15ATJ
UL94V-0f
UL94V-0
DIODE w2x
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Untitled
Abstract: No abstract text available
Text: nil Nihon Inter Electronics Corporation 1.7A Avg 100 Volts ~X SBD EA20QS10 EA20QS10-F ) (~ MAXIMUM RATINGS •OUTLINE DRAWING(mm) ' ' ' Type S y m b o r\^ Rating < v> & L l -}ifi ',ti h. Repetitive Peak Reverse Voltage f- fl* i/i P.C.Board mounted * Average
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EA20QS10
EA20QS10-F
EA20QSI0
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Untitled
Abstract: No abstract text available
Text: GaN 600V SBD < m Nihon Inter Electronics Corporation Gallium Nitride 600V SBD Vr-V Characteristics H //// -PFC Circuit Applied Reverse Voltage [V] -Reduce VF rise due to current collapse to below 20% Recovery waveform GaN vs Si Si GaN FSU05A60 SÌ-FRD/5A/600V
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FSU05A60
-FRD/5A/600V)
40ns/div
FSA06A60
GaN-SBD/6A/600V)
FSA04B60
O-220
FSA06B60
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Diodo Schottky
Abstract: DIODO
Text: 4A 65VT»150t Fully Molded similar to TO-220AC FSQS04A065 ttfl« 0 * ^ Nihon Inter Electronics Corporation Specification. lie 'S3 y Construction f f lìÉ Application h K ' 7 ? ' 4 Schottky Barrier Diode High Frequency Rectification MAXIMUM RATINGS Ta=25cC Unless otherwise specified
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65VTjw150V
O-22QAC
FSQS04A065
50Hzhalf
FSQS04A065
20mVRMS
100kHz
UL94V-0
Diodo Schottky
DIODO
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diode F 82 bp
Abstract: DIODE BP ZF8.2 EC10QSO ZF-8.2 Zf12 smd zener bp ZF24 ZF30 Q05CT
Text: QUANTUM MARKETING INTERNATIONA* a n Nihon Inter Electronics Corporation AUTHORIZED AGENT Case Style Type Circuit E C 10DS1 EC10DS2 EC10DS4 EC10DS6 R ectifier Diode D 64 lo V FM (A) (V) 1.0 1.1 .55 EC10Q S03 EC10QSO_4 Schottky Barrier Diode (S.B.D.) Single C hip
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10DS1
EC10DS2
EC10DS4
EC10DS6
EC10Q
EC10QSO
10QS05
10QS06
EC10QS10
EC15Q
diode F 82 bp
DIODE BP
ZF8.2
ZF-8.2
Zf12
smd zener bp
ZF24
ZF30
Q05CT
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FSQS05A065
Abstract: No abstract text available
Text: 5A 65V Tm 150V FulfyMoHeä similar to TO-220AC FSQS05A065 tt« * 0 * ^ Nihon Inter Electronics Corporation Specification. Construction ’> 3 y h 3 r — /< V 7 y 4 3 r — K Schottky Barrier Diode Application High Frequency Rectification MAXIMUM RATINGS T a= 25 C: Unless otherwise specified
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65VTjw150V
TQ-220AC
FSQS05A065
20mVRMs,
100kHz
FSQS05A065
FSQS05Arj
UL94V-0
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