MA190
Abstract: 25-KHz UA102
Text: 2SK1033 MA111 Switching Diodes MA190 Silicon epitaxial planer type For switching circuits Unit : mm f0.56 max. 1 • Features ● Small capacity between pins, Ct 1st Band 2nd Band ■ Absolute Maximum Ratings Ta= 25˚C Symbol Rating Unit Reverse voltage (DC)
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2SK1033
MA111
MA190
DO-35
30MHz
MA190
25-KHz
UA102
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MA2B190
Abstract: NIHON PULSE "cathode indication" NIHON koshuha
Text: Switching Diodes MA2B190 Silicon epitaxial planar type Unit : mm φ 0.56 max. For switching circuits 1 • Features • Low forward dynamic resistance rf 24 min. COLORED BAND INDICATES CATHODE 1st Band 2nd Band Reverse voltage DC Symbol Rating Unit VR 35
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MA2B190
DO-35
MA2B190
NIHON PULSE
"cathode indication"
NIHON koshuha
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MA859
Abstract: "cathode indication" black
Text: MA111 Band Switching Diodes MA859 Silicon epitaxial planer type Unit : mm For band switching φ0.45 max. DHD envelope, enabling 5mm pitch insertion ● Less voltage dependence of the capacity Ct between pins ● Low forward dynamic resistance rf 2.2±0.3 1st Band
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MA111
MA859
DO-34
1000MHz
YHP4191A
MA859
"cathode indication" black
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Untitled
Abstract: No abstract text available
Text: 2SK1036 Switching Diodes MA194 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 1.45 • Features 1 0.5 0.95 4 0.95 2 3 +0.1 +0.2 Unit Reverse voltage DC VR 40 V Repetitive peak reverse voltage
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2SK1036
MA194
100mA
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Cathode indicated by blue band
Abstract: TDC-121A YHP4191A MA2C859 "cathode indication" black
Text: Band Switching Diodes MA2C859 Silicon epitaxial planar type Unit : mm For band switching φ 0.45 max. • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Reverse voltage DC VR 35 V Forward current (DC) IF 100 mA Operating ambient temperature
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MA2C859
DO-34
INDICATE-121A
TDC-121A
Cathode indicated by blue band
TDC-121A
YHP4191A
MA2C859
"cathode indication" black
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MA4X194
Abstract: No abstract text available
Text: Switching Diodes MA4X194 Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 1 0.4 − 0.05 0.5 0.95 4 V 40 V + 0.1 0.16 − 0.06 40 0.1 to 0.3 0 to 0.1 VR VRRM 0.8 Unit + 0.2 Rating 1.1 − 0.1 Symbol 0.4 ± 0.2 Average forward
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MA4X194
MA4X194
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marking RF 98
Abstract: MA4X862 YHP4191A
Text: Band Switching Diodes MA4X862 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 + 0.1 1.5 − 0.05 0.4 − 0.05 1.45 0.65 ± 0.15 0.5 R 35 V IF 100 mA 75 mA/Unit Operating ambient temperature Topr −25 to +85 °C Storage temperature
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MA4X862
marking RF 98
MA4X862
YHP4191A
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MA862
Abstract: NIHON marking diodes marking diodes nihon
Text: MA111 Band Switching Diodes MA862 Silicon epitaxial planer type Unit : mm For band switching +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 1.45 • Features 0.5R 0.5 Parameter Reverse voltage DC Forward current (DC) Single Double
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MA111
MA862
1000MHz
TDC-121A
YHP4191A
MA862
NIHON marking diodes
marking diodes nihon
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MA196
Abstract: MA2C196
Text: Switching Diodes MA2C196 MA196 Silicon epitaxial planar type For switching circuits Unit: mm • Features 13.0 min. 2.3±0.3 2.2±0.3 0.2 max. φ 1.6±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit VR 50 V Repetitive peak reverse voltage
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MA2C196
MA196)
MA196
MA2C196
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MA190
Abstract: MA2B190 panasonic ma190
Text: Switching Diodes MA2B190 MA190 Silicon epitaxial planar type Unit : mm φ 0.56 max. For switching circuits 1 • Features • Low forward dynamic resistance rf 24 min. COLORED BAND INDICATES CATHODE 1st Band 2nd Band Reverse voltage (DC) Symbol Rating Unit
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MA2B190
MA190)
DO-35
MA190
MA2B190
panasonic ma190
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA2C196 (MA196) Silicon epitaxial planar type For switching circuits Unit: mm • Features 13.0 min. 2.3±0.3 2.2±0.3 0.2 max. φ 1.6±0.2 ■ Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
MA2C196
MA196)
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MA194
Abstract: MA4X194
Text: Switching Diodes MA4X194 MA194 Unit: mm Silicon epitaxial planar type 2.90+0.20 –0.05 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) For switching circuits 0.5R 2 0.40+0.10 –0.05 Repetitive peak reverse voltage Single Forward current (Average) Double Repetitive peak
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MA4X194
MA194)
SC-61
MA194
MA4X194
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Untitled
Abstract: No abstract text available
Text: Band Switching Diodes MA4X862 MA862 Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For band switching 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 0.5R 2 1 0.60+0.10 –0.05 Reverse voltage Rating Unit VR 35 V IF 100 mA Operating ambient temperature *2
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MA4X862
MA862)
SC-61
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Untitled
Abstract: No abstract text available
Text: Switching Diodes MA2B190 MA190 Silicon epitaxial planar type Unit : mm φ 0.56 max. For switching circuits 1 • Features M Di ain sc te on na tin nc ue e/ d • Low forward dynamic resistance rf 24 min. COLORED BAND INDICATES CATHODE 1st Band 2nd Band Repetitive peak reverse voltage
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MA2B190
MA190)
TDC-121A
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MA194
Abstract: MA4X194
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X194 (MA194) Unit: mm Silicon epitaxial planar type 2.90+0.20 –0.05 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) • Features 0.5R 2 0.40+0.10 –0.05 Repetitive peak reverse voltage
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2002/95/EC)
MA4X194
MA194)
SC-61
MA194
MA4X194
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MA4X862
Abstract: MA862 YHP4191A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA4X862 (MA862) Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For band switching 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 0.5R 2 1 0.60+0.10 –0.05 Reverse voltage
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2002/95/EC)
MA4X862
MA862)
MA4X862
MA862
YHP4191A
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MA194
Abstract: MA4X194
Text: Switching Diodes MA4X194 MA194 Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 1 0.4 − 0.05 0.5 0.95 4 V 40 V + 0.1 0.16 − 0.06 40 0.1 to 0.3 0 to 0.1 VR VRRM 0.8 Unit + 0.2 Rating 1.1 − 0.1 Symbol 0.4 ± 0.2
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MA4X194
MA194)
MA194
MA4X194
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MA2C859
Abstract: MA859 YHP4191A PANASONIC MA2C859
Text: Band Switching Diodes MA2C859 MA859 Silicon epitaxial planar type Unit : mm For band switching φ 0.45 max. • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Reverse voltage (DC) VR 35 V Forward current (DC) IF 100 mA Operating ambient temperature
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MA2C859
MA859)
DO-34
MA2C859
MA859
YHP4191A
PANASONIC MA2C859
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MA860
Abstract: YHP4191A TDC-121
Text: MA111 Band Switching Diodes MA860 Silicon epitaxial planer type Unit : mm For band switching • Features φ1.4±0.1 cylindrical package, optimum for high-density mounting M Di ain sc te on na tin nc ue e/ d ● Extra-small voltage dependence of the capacity Ct between pins
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MA111
MA860
MA860
YHP4191A
TDC-121
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MA190
Abstract: MA2B190
Text: Switching Diodes MA2B190 MA190 Silicon epitaxial planar type Unit : mm φ 0.56 max. For switching circuits 1 • Features ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Reverse voltage (DC) VR 35 V Repetitive peak reverse voltage VRRM
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MA2B190
MA190)
MA190
MA2B190
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MA2C859
Abstract: MA859 YHP4191A
Text: Band Switching Diodes MA2C859 MA859 Silicon epitaxial planar type Unit: mm For band switching • Features 13.0 min. 2.3±0.3 2.2±0.3 0.2 max. 13.0 min. φ 0.40±0.05 • Extra-small DHD envelope, allowing to insert into a 5 mm pitch hole • Less voltage dependence of the terminal capacitance Ct
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MA2C859
MA859)
DO-34-A1
MA2C859
MA859
YHP4191A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X194 (MA194) Unit: mm Silicon epitaxial planar type 2.90+0.20 –0.05 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) • Features 0.5R 2 0.40+0.10 –0.05 Repetitive peak reverse voltage
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2002/95/EC)
MA4X194
MA194)
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MA862
Abstract: YHP4191A MA4X862
Text: Band Switching Diodes MA4X862 MA862 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 + 0.1 1.5 − 0.05 0.4 − 0.05 1.45 0.65 ± 0.15 0.5 R 35 V IF 100 mA 75 mA/Unit Operating ambient temperature Topr −25 to +85 °C Storage temperature
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MA4X862
MA862)
MA862
YHP4191A
MA4X862
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MA4X862
Abstract: MA862 YHP4191A NIHON koshuha
Text: Band Switching Diodes MA4X862 MA862 Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For band switching 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 4 2 1 0.60+0.10 –0.05 Forward current (DC) Single Symbol Rating Unit VR 35 V IF 100 mA 75 mA/Unit Double
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MA4X862
MA862)
MA4X862
MA862
YHP4191A
NIHON koshuha
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