NMOS 2147H Search Results

NMOS 2147H Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
D8087-1		Rochester Electronics LLC	Math Coprocessor, 16-Bit, NMOS, CDIP40, CERDIP-40
P8251A-G		Rochester Electronics LLC	P8251A - Serial I/O Controller, NMOS
P8085AH-2-G		Rochester Electronics LLC	P8085 - Microprocessor, 8-Bit, 5MHz, NMOS, PDIP40
D8031AH		Rochester Electronics LLC	Microcontroller, 8-Bit, 6MHz, NMOS, CDIP40, CERDIP-40
C8231A		Rochester Electronics LLC	Math Coprocessor, 8-Bit, NMOS, CDIP24, DIP-24

NMOS 2147H Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
4000 series CMOS Logic ICs Abstract: 74HCT-series 74HCT IC family spec AP-252 hmos mosfet disadvantages of intel 8051 8051s 74c SERIES cmos logic data pressure measurement with 8051 AP252 Text: AP-252 APPLICATION NOTE Designing With The 80C51BH TOM WILLIAMSON MCO APPLICATIONS ENGINEER March 1985 Order Number 270068-002 Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or copyright for sale and use of Intel products except as provided in	Original	PDF	AP-252 80C51BH AP-125 2147H AP-74 4000 series CMOS Logic ICs 74HCT-series 74HCT IC family spec AP-252 hmos mosfet disadvantages of intel 8051 8051s 74c SERIES cmos logic data pressure measurement with 8051 AP252
2147 intel Abstract: Intel 2147H 2147-6 2141L-3 2141L-5 2147H 2147H-1 2147H-2 2147H-3 2147H-4 Text: 14 4 K • ■ ■ n X ïâfèïïïs m « it ^ CC TAAC max <ns) A TCAC max ns) TOE max (ns) "/ TOH min (ns) nMOS fTOD max (ns) > S t a t i c 7' TWP min (ns) RAM ( 4 0 9 6 X 1 ) tí TBS min (ns) « TDH Ss) T*D rain (ns) TWR max (ns) V D D or V C C (V) 18 P I N	OCR Scan	PDF	4096X1) Am90440 Am9044D Am9044E C2147A C2147A-3 C2147AL C2147AL-3 C2147II-2 2147 intel Intel 2147H 2147-6 2141L-3 2141L-5 2147H 2147H-1 2147H-2 2147H-3 2147H-4
Lpel Abstract: Intel 2147H 2147H HM6147HLP-35 HM6147HLP-45 HM6147HLP-55 HM6147HP-35 HM6147HP-45 HM6147HP-55 hc5v1 Text: H M 6147H S e r ie s Maintenance Only 4096-word x 1-bit High Speed CMOS Static RAM FEATURES » High Speed: Fast Access Time 35ns/45ns/55ns (max. » Low Power Standby and Low Power Operation, Standby: 100juW (typ.)/5 p W (typ.) (L-version), O peration: 150mW typ.	OCR Scan	PDF	HM6147H 4096-word 35ns/45ns/55ns 100juW 150mW 2147H Ta-25 Lpel Intel 2147H HM6147HLP-35 HM6147HLP-45 HM6147HLP-55 HM6147HP-35 HM6147HP-45 HM6147HP-55 hc5v1
NMOS 2147H Abstract: intel h55 intel 2147 intel h55 circuit diagram K 4096 cross reference data MBM2147H Text: F U JIT SU MBM2147H-70 MBM2147H-55 M IC R O E L E C T R O N IC S MOS 4096-BIT STATIC RANDOM ACCESS MEMORY MBM2M7B35 DESCRIPTION single +5V DC supply. For ease of use, chip select C5 permits the selection of an individual package when outputs are ORtied, and automatically powers	OCR Scan	PDF	MBM2147H-70 MBM2147H-55 4096-BIT MBM2147H MBM2147H. NMOS 2147H intel h55 intel 2147 intel h55 circuit diagram K 4096 cross reference data
triac tag 8518 Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference	OCR Scan	PDF
HM6147 Abstract: NMOS 2147H 2147H HM6147H-35 HM6147HLP-35 HM6147HLP-45 HM6147HLP-55 HM6147HP-35 HM6147HP-45 HM6147HP-55 Text: Maintenance Only HM6147H Series 4096-word x 1-bit High Speed CMOS Static RAM •FEATURES • • • High Speed: Fast Access Time 35ns/45ns/55ns max. Low Power Standby and Low Power Operation, Standby: 100juW (typ.)/5/nW (typ.) (L-version), O peration: 150mW typ.	OCR Scan	PDF	HM6147H 4096-word 35ns/45ns/55ns 100juW 150mW 2147H INFOR10 -HM6147H HM6147 NMOS 2147H HM6147H-35 HM6147HLP-35 HM6147HLP-45 HM6147HLP-55 HM6147HP-35 HM6147HP-45 HM6147HP-55
INTEL H55 Abstract: 551h MBM2147H MBM2147 H-3570 NMOS 2147H intel 2147 intel h55 circuit diagram Text: MBM2147H-70 MBM2147H-55 MBM2147H-45 MBM2I47H-35 FUJITSU M IC R O E L E C T R O N IC S MOS 4096-BIT STATIC RANDOM ACCESS MEMORY DESCRIPTION single +5V DC supply. For ease of use, chip select C3 perm its the selection of an individual package when outputs are ORtied, and autom atically powers	OCR Scan	PDF	4096-BIT MBM2147H-70 MBM2147H-55 MBM2147H-45 MBM2147H-35 MBM2147H MBM2147H-70: MBM2147H-55: MBM2147H-45: MBM2147H-35: INTEL H55 551h MBM2147 H-3570 NMOS 2147H intel 2147 intel h55 circuit diagram
2114D Abstract: ET2147H-1 Text: G fl7I S-THOMSON The E T 214 7H is a 409 6-w o rd by 1 -bit static random access memory fabricated usin g N-channel silicon-gate technology X -M O S . All internal circuits are fully static and therefore require no clocks or refreshing for operation. The data is read out non destructively and	OCR Scan	PDF	ET2147H 4096-w 100i0 2114D ET2147H-1
HN462532G Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4 Text: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .	OCR Scan	PDF
TCA965 equivalent Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401 Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated	OCR Scan	PDF	DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Untitled Abstract: No abstract text available Text: p w io M M o n r in t e r M27C512 512K 64K x 8 UV ERASABLE PROM Military • Fast Access Time — M27C512-15 150 ns — M27C512-20 200 ns — M27C512-25 250 ns ■ Two-Line Control ■ CMOS and TTL Compatible ■ Low Power — 30 mA max. Active — 1.0 mA max. Standby	OCR Scan	PDF	M27C512 M27C512-15 M27C512-20 M27C512-25 M27C512
intel 27c512 eprom Abstract: 27C512-200V10 i27C512 d27c512 27C512-120V10 I27C256 intel 27c512 29022 27C512-1 27C512-2 Text: INTEL CORP MEMORY/LOGIC 50E D • 4fl2hl7b GObböOH 4 ■ In te l' T -V L -lS -tS 27C512 T“-V6-/3 -29 512K (64K x 8) CHMOS PRODUCTION AND UV ERASABLE PROMS ■ Software Carrier Capability ■ 120 ns Access Time ■ Two-Line Control ■ Inteligent identifier Mode	OCR Scan	PDF	27C512 27C512 288-bit T-46-13-29 intel 27c512 eprom 27C512-200V10 i27C512 d27c512 27C512-120V10 I27C256 intel 27c512 29022 27C512-1 27C512-2
intel 27C011 Abstract: 27C128 INTEL 27C513 27C128 st make 27C011 27C128 27C256 27C64 27CS12 87C64 Text: in te i 27C513 PAGE-ADDRESSED 512K 4 x 16K x 8 UV ERASABLE PROM • Paged Organization — Reduced Physical Address Requirement — No Bank Switching Logic Needed ■ Software Carrier Capacity ■ Automatic Page Clear — Resets to Page 0 on Power Up and	OCR Scan	PDF	27C513 7128A 28-Pin 27C513 288-bit 27CS13 intel 27C011 27C128 INTEL 27C128 st make 27C011 27C128 27C256 27C64 27CS12 87C64
k5m capacitor Abstract: 27C128 INTEL eprom 27c64 PROGRAMMER CIRCUIT ic 27c64 intel 27C011 27CS12 2732A TVR 07 spec 27C011 27C128 Text: in te i 27C513 PAGE-ADDRESSED 512K 4 x 16K x 8 UV ERASABLE PROM • Paged Organization — Reduced Physical Address Requirement — No Bank Switching Logic Needed ■ 170 ns Access Time ■ Two Line Control ■ Low Power — 30 mA max. Active — 100 f i A max. Standby	OCR Scan	PDF	27C513 7128A 28-Pin 27C513 288-bit 27CS13 k5m capacitor 27C128 INTEL eprom 27c64 PROGRAMMER CIRCUIT ic 27c64 intel 27C011 27CS12 2732A TVR 07 spec 27C011 27C128

intel 27f64 Abstract: 27F64 P2764A AP-314 2764A 2764a eprom PINOUT 294005 27C64 D27F64-150V05 D27F64-170V05 Text: inteT A iu o li» « ? 27F64 64K 8K x 8 CHMOS FLASH MEMORY Quick-Erase Algorithm — Two Second Typical Array Electrical Erasure On-Board Program/Erase — New Modes Simplify In-Module Firmware Upgrades High Performance Speeds — 150 ns Maximum Access Time	OCR Scan	PDF	27F64 27C64 27F64 8192ry 2147H, 27F64, AP-314 intel 27f64 P2764A AP-314 2764A 2764a eprom PINOUT 294005 D27F64-150V05 D27F64-170V05
290153 Abstract: No abstract text available Text: ir r t e T 64K 8K X 57F64 8 CHMOS FLASH EPROM • Flash-Erase — Two Second Typical Array Electrical Erasure On-Board Program/Erase — New Modes Simplify In-Module Firmware Upgrades ■ High Performance Speeds — 150 ns Maximum Access Time 2764A and 27C64 JEDEC Pinout	OCR Scan	PDF	57F64 27C64 290153
transistor cross reference Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466 Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC	OCR Scan	PDF
P80A49H Abstract: 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel Text: COMPONENT DATA CATALOG JANUARY 1982 Intel C orporation makes no w arranty fo r the use of its products and assumes no re sponsib ility fo r any e rrors w hich may appear in th is docum ent nor does it make a com m itm ent to update the info rm atio n contained herein.	OCR Scan	PDF	RMX/80, P80A49H 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel