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    NMOS ENHANCEMENT AND DEPLETION MODE Search Results

    NMOS ENHANCEMENT AND DEPLETION MODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE812NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE812NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, Fixed Over Voltage Clamp, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    NMOS ENHANCEMENT AND DEPLETION MODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BJT with V-I characteristics

    Abstract: P-Channel Depletion Mosfets ECE60L IN60L depletion MOSFET compute voltage in kcl n channel depletion MOSFET P-Channel Depletion Mode FET P-Channel Depletion Mosfet datasheet P-Channel Depletion Mode Field Effect Transistor
    Text: Field-Effect FET transistors References: Hayes & Horowitz (pp 142-162 and 244-266), Rizzoni (chapters 8 & 9) In a field-effect transistor (FET), the width of a conducting channel in a semiconductor and, therefore, its current-carrying capability, is varied by the application of an electric field (thus,


    Original     		ECE60L BJT with V-I characteristics P-Channel Depletion Mosfets IN60L depletion MOSFET compute voltage in kcl n channel depletion MOSFET P-Channel Depletion Mode FET P-Channel Depletion Mosfet datasheet P-Channel Depletion Mode Field Effect Transistor PDF

    CMOS

    Abstract: No abstract text available
    Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications


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    NMOS depletion pspice model

    Abstract: NMOS MODEL PARAMETERS SPICE "X-Fab" Core cell library PSPICE MODEL R2R bsim3 ADS bsim3 model SPECTRE MODEL QS 100 NPN Transistor RP20 analog devices transistor tutorials
    Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications


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    U2550

    Abstract: u560100 ZMD U2510 U560244 Bosch Common Rail Sensor U2400 6v to 7.5v dc power supply circuit project U560048 U2100 u5601
    Text: Mixed-signal ASICs - brilliant ideas developed through dialogue with our customers Mixed-signal ICs from ZMD - system solutions that meet exacting requirements, containing a high proportion of analog circuit components. These ICs typically provide cost-effective on-chip calibration,


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    FET pair n-channel p-channel

    Abstract: P-Channel Depletion-Mode MOSFET
    Text: An introduction to Depletion-mode MOSFETs By Linden Harrison Since the mid-nineteen seventies the “enhancement-mode” MOSFET has been the subject of almost continuous global research, development, and refinement by both the semiconductor industry and academia. As a result it has become the predominant


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    0.18 um CMOS parameters

    Abstract: poly silicon resistor pepi c 0.18 um CMOS technology World transistors
    Text: 1.0 µm CMOS Process XC10 1.0 µm Mixed Signal CMOS Technology Schematic cross section NMOS Poly-Poly-CAP Broad variety of combinable process elements available: PMOS - Double poly capacitor Source Drain Source Drain Gate n+ - High ohmic and low TC resistors


    Original     		10-3/K] 0.18 um CMOS parameters poly silicon resistor pepi c 0.18 um CMOS technology World transistors PDF

    BSP149 equivalent

    Abstract: DC chopper n mosfet depletion pspice model parameters BUZ MOSFET kp1022 BSP149 depletion mode mosfet 100 MHz NMOS depletion pspice model SIPMOS SPICE BSS SPICE
    Text: SPICE Models for SIPMOS Components Version: Purpose: Author: 3.1 Clarification of SIPMOS - SPICE models Dr. P. Türkes, Dr. M. März 1 Introduction Powerful new-generation personal computers with a fast main processor and a math-coprocessor allow circuit developers to benefit inexpensively from CAD methods, since such computers make it


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    BUZ12

    Abstract: SIPMOS application note depletion MOSFET SPICE n mosfet depletion note BUZ12AL BSP149 equivalent BUZ MOSFET kp1022 SIPMOS BUZ41A
    Text: Power Semiconductor Application Note AN_PSM1e SPICE Models for SIPMOS Components Purpose: Author: Clarification of SIPMOS - SPICE models V1.0 Dr. P. Türkes, Dr. M. März, P. Nance 1 Introduction Powerful new-generation personal computers with a fast main processor and a math-coprocessor


    Original     		compon99 BUZ12 SIPMOS application note depletion MOSFET SPICE n mosfet depletion note BUZ12AL BSP149 equivalent BUZ MOSFET kp1022 SIPMOS BUZ41A PDF

    n mosfet depletion pspice model parameters

    Abstract: TRANSISTOR SDM M6 STP40N03L-20 transistor m6 l6 NMOS depletion pspice model SDM M6 tt20n 19E-02
    Text: STP40N03L-20 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STP40N03L-20 30 V < 0.02 Ω 40 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.016 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP40N03L-20 175oC O-220 n mosfet depletion pspice model parameters TRANSISTOR SDM M6 STP40N03L-20 transistor m6 l6 NMOS depletion pspice model SDM M6 tt20n 19E-02 PDF

    STP38N06

    Abstract: n mosfet depletion pspice model parameters NMOS depletion pspice model 19E-02
    Text: STP38N06 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STP38N06 60 V < 0.03 Ω 38 A (*) • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP38N06 100oC 175oC O-220 STP38N06 n mosfet depletion pspice model parameters NMOS depletion pspice model 19E-02 PDF

    intel 80188

    Abstract: ab37 AB-37 80188 80188 application Pierce oscillator 80186 80186 intel x1 transistor 7641 equivalent
    Text: AB-37 APPLICATION BRIEF 80186 80188 EFI Drive and Oscillator Operation STEVE FARRER APPLICATIONS ENGINEER February 1996 Order Number 270526-001 Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or copyright for sale and use of Intel products except as provided in


    Original     		AB-37 intel 80188 ab37 AB-37 80188 80188 application Pierce oscillator 80186 80186 intel x1 transistor 7641 equivalent PDF

    OMNIFET

    Abstract: VB020-4 Depletion MOSFET VB020 VN02N equivalent depletion mode current limiter VB921ZVFI equivalent VN02NSP equivalent VN02H VN370B
    Text: SMART HIGH SIDE DRIVERS OMNIFETs - AUTOPROTECTED POWER MOSFETs Type VCLAMP RDS on (V) (mΩ) VNW100N04 • VNW50N04 ■ VNP49N04 VNP49N04FI VNV49N04 VNB49N04 VNP35N07 VNP35N07FI VNV35N07 VNB35N07 VNP28N04 VNP28N04FI VNV28N04 VNB28N04 VNP20N07 VNP20N07FI VNV20N07


    Original     		VNW100N04 VNW50N04 VNP49N04 VNP49N04FI VNV49N04 VNB49N04 VNP35N07 VNP35N07FI VNV35N07 VNB35N07 OMNIFET VB020-4 Depletion MOSFET VB020 VN02N equivalent depletion mode current limiter VB921ZVFI equivalent VN02NSP equivalent VN02H VN370B PDF

    Untitled

    Abstract: No abstract text available
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD210800/ALD210800A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS th = +0.00V QUAD HIGH DRIVE ZERO THRESHOLD MATCHED PAIR GENERAL DESCRIPTION FEATURES & BENEFITS ALD210800A/ALD210800 precision N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These


    Original     		ALD210800/ALD210800A ALD210800A/ALD210800 ALD110800A/ALD110800 PDF

    Untitled

    Abstract: No abstract text available
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD212900/ALD212900A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS th = +0.00V DUAL HIGH DRIVE ZERO THRESHOLD MATCHED PAIR GENERAL DESCRIPTION FEATURES & BENEFITS ® ALD212900A/ALD212900 precision N-Channel EPAD MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These


    Original     		ALD212900/ALD212900A ALD212900A/ALD212900 ALD110900A/ALD110900 ALD212900A/ ALD212900 PDF

    Untitled

    Abstract: No abstract text available
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD212900/ALD212900A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS th = +0.00V DUAL HIGH DRIVE ZERO THRESHOLD MATCHED PAIR GENERAL DESCRIPTION FEATURES & BENEFITS ® ALD212900A/ALD212900 precision N-Channel EPAD MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These


    Original     		ALD212900/ALD212900A ALD212900A/ALD212900 ALD110900A/ALD110900 ALD212900A/ ALD212900 PDF

    ST VIPER application notes

    Abstract: schematic SMPS set top box off-line power supply based on Viper 22 smps lead acid battery charger VIPer Design Software APPLICATION NOTES LM7812 VIPER 22 schematic ST VIPER 22 application notes viper dvd player smps
    Text: April 2000 ST's revolutionary VIPer series of off-line switch mode power supply regulators combines an optimized, high voltage, avalanche rugged Vertical Power MOSFET with state-of-the-art PWM circuitry. The result is truly innovative AC to DC conversion that is simpler, quicker and - with component count halved - less expensive.


    Original     		PowerSO-10 ST VIPER application notes schematic SMPS set top box off-line power supply based on Viper 22 smps lead acid battery charger VIPer Design Software APPLICATION NOTES LM7812 VIPER 22 schematic ST VIPER 22 application notes viper dvd player smps PDF

    80C51

    Abstract: transistor s6p
    Text: Phlips Semiconductors 80C51 Family 80C51 family hardware description • The Serial Interface • The Interrupt System • Reset • The Reduced Power Modes in CMOS devices • The EPROM version of the 80C51 HARDWARE DESCRIPTION This chapter provides a detailed description of the 80C51


    Original     		80C51 80C51 SU00559 SU00560 transistor s6p PDF

    IC 2267

    Abstract: mec 5025 NEC JAPAN upd7011 c dy128 uPD7011 PD7720 7011c 8085A-2 HPD7720 NVR2
    Text: D A T A SHEET NEC M OS INTEGRATED C IR C U IT ELECTRON DEVICE . / / P D - 7 0 1 1 8 -B IT N M O S D / A C O NVERTER The /jPD7011 is a low cost 8-bit NMOS digital-to-analog converter using Enhancement Depletion ED technology. The /-iPD7011 features single +5 V power supply operation and on board voltage reference.


    OCR Scan     		uPD7011 /PD7720 PD7011 juCOM-87, /JPD7720 IC 2267 mec 5025 NEC JAPAN upd7011 c dy128 PD7720 7011c 8085A-2 HPD7720 NVR2 PDF

    IC 2267

    Abstract: 7011-C PD7011C 7011c UD701 OF 8 pin DIP IC 7011c
    Text: D A TA SH EET SEC M O S INTEGRATED C IR C U IT ELECTRON DEVICE / / P D 7 0 1 1 8 -B IT N M O S D /A C O N VERTER The /iPD7011 is a low cost 8-bit NMOS digital-to-analog converter using Enhancement Depletion ED technology. The /j PD70 11 features single +5 V power supply operation and on board voltage reference.


    OCR Scan     		uPD7011 HPD7720 PD7011 1988M IC 2267 7011-C PD7011C 7011c UD701 OF 8 pin DIP IC 7011c PDF

    til 701

    Abstract: photodiode die WAFER MAGNATEC LATERAL MOSFET magnatec mosfets depletion mode mosfet 100 MHz semefab Power MOSFET Wafer pps 501 semelab mosfet lateral
    Text: til// 'rr* 'WWr Semefab SILICON DESIGN — WAFER FABRICATION SEMEFAB SCOTLAND LTD. is the Group's wafer fabrication facility based in Glenrothes, Fife. Located adjacent to Compugraphics, Europe's largest independent mask manufacturer, SEMEFAB has a capacity of


    OCR Scan     		100mm 10OOnm til 701 photodiode die WAFER MAGNATEC LATERAL MOSFET magnatec mosfets depletion mode mosfet 100 MHz semefab Power MOSFET Wafer pps 501 semelab mosfet lateral PDF

    PN channel MOSFET 10A

    Abstract: 1S71 1S74 C035 STD20N06 TJ50D NMOS depletion pspice model diode 935 lg
    Text: S G S -T H O M S O N HUSCTIiMOÛS STD20N06 N - CHANNEL ENHANCEMENT MODE ’’ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TYPE V dss RDS on Id STD20N06 60 V < 0.03 n 20 A (*) . . • . . . . ■ TYPICAL RDS(on) = 0.026 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    OCR Scan     		STD20N06 STD20N06 O-251) O-252) O-251 O-252 0068771-E 0068772-B PN channel MOSFET 10A 1S71 1S74 C035 TJ50D NMOS depletion pspice model diode 935 lg PDF

    G52020-0

    Abstract: VSC10000
    Text: PRELIMINARY I H T ÏJ Q Ir VSC10000 mm High Performance SEMICONDUCTOR CORPORATION j 0 0 () A fm y Features • High Performance Characteristics VLSI GaAs Gate Array - D flip-flop; Clk to Q: 480 ps, toggle rate > 1GHz; Clk to Q = 588 ps, worst case (F.O. = 3 ,1 .5mm wire)


    OCR Scan     		VSC10000 100K/10K/10KH 10K/1 G52020-0 VSC10000 PDF

    poly silicon resistor

    Abstract: PD43256A Signal Path Designer 630048
    Text: *^ ^ APPLICATION NOTE 5 0 BATTERY BACKUP c ir c u it s f o r s ra m s w NEC Electronics Inc. Introduction The evolution of low-power, high-capacity, high-speed memory technologies has led the system designer to novel and highly portable computer designs. As tech­


    OCR Scan     		2N3904 poly silicon resistor PD43256A Signal Path Designer 630048 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY VITESSE VSC10000 High Performance 10000 Gate Array SEMICONDUCTOR CORPORATION Features >VLSI GaAs Gate Array • High Performance Characteristics - 13,376 2 input NOR gates in the internal array - Cell architecture is optimized for up to 1100 high drive buffered D-type flip-flops


    OCR Scan     		VSC10000 100K/10K/10KH 10K/10KH PDF