BJT with V-I characteristics
Abstract: P-Channel Depletion Mosfets ECE60L IN60L depletion MOSFET compute voltage in kcl n channel depletion MOSFET P-Channel Depletion Mode FET P-Channel Depletion Mosfet datasheet P-Channel Depletion Mode Field Effect Transistor
Text: Field-Effect FET transistors References: Hayes & Horowitz (pp 142-162 and 244-266), Rizzoni (chapters 8 & 9) In a field-effect transistor (FET), the width of a conducting channel in a semiconductor and, therefore, its current-carrying capability, is varied by the application of an electric field (thus,
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ECE60L
BJT with V-I characteristics
P-Channel Depletion Mosfets
IN60L
depletion MOSFET
compute voltage in kcl
n channel depletion MOSFET
P-Channel Depletion Mode FET
P-Channel Depletion Mosfet datasheet
P-Channel Depletion Mode Field Effect Transistor
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CMOS
Abstract: No abstract text available
Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications
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NMOS depletion pspice model
Abstract: NMOS MODEL PARAMETERS SPICE "X-Fab" Core cell library PSPICE MODEL R2R bsim3 ADS bsim3 model SPECTRE MODEL QS 100 NPN Transistor RP20 analog devices transistor tutorials
Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications
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U2550
Abstract: u560100 ZMD U2510 U560244 Bosch Common Rail Sensor U2400 6v to 7.5v dc power supply circuit project U560048 U2100 u5601
Text: Mixed-signal ASICs - brilliant ideas developed through dialogue with our customers Mixed-signal ICs from ZMD - system solutions that meet exacting requirements, containing a high proportion of analog circuit components. These ICs typically provide cost-effective on-chip calibration,
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FET pair n-channel p-channel
Abstract: P-Channel Depletion-Mode MOSFET
Text: An introduction to Depletion-mode MOSFETs By Linden Harrison Since the mid-nineteen seventies the “enhancement-mode” MOSFET has been the subject of almost continuous global research, development, and refinement by both the semiconductor industry and academia. As a result it has become the predominant
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0.18 um CMOS parameters
Abstract: poly silicon resistor pepi c 0.18 um CMOS technology World transistors
Text: 1.0 µm CMOS Process XC10 1.0 µm Mixed Signal CMOS Technology Schematic cross section NMOS Poly-Poly-CAP Broad variety of combinable process elements available: PMOS - Double poly capacitor Source Drain Source Drain Gate n+ - High ohmic and low TC resistors
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10-3/K]
0.18 um CMOS parameters
poly silicon resistor
pepi c
0.18 um CMOS technology
World transistors
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BSP149 equivalent
Abstract: DC chopper n mosfet depletion pspice model parameters BUZ MOSFET kp1022 BSP149 depletion mode mosfet 100 MHz NMOS depletion pspice model SIPMOS SPICE BSS SPICE
Text: SPICE Models for SIPMOS Components Version: Purpose: Author: 3.1 Clarification of SIPMOS - SPICE models Dr. P. Türkes, Dr. M. März 1 Introduction Powerful new-generation personal computers with a fast main processor and a math-coprocessor allow circuit developers to benefit inexpensively from CAD methods, since such computers make it
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BUZ12
Abstract: SIPMOS application note depletion MOSFET SPICE n mosfet depletion note BUZ12AL BSP149 equivalent BUZ MOSFET kp1022 SIPMOS BUZ41A
Text: Power Semiconductor Application Note AN_PSM1e SPICE Models for SIPMOS Components Purpose: Author: Clarification of SIPMOS - SPICE models V1.0 Dr. P. Türkes, Dr. M. März, P. Nance 1 Introduction Powerful new-generation personal computers with a fast main processor and a math-coprocessor
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compon99
BUZ12
SIPMOS application note
depletion MOSFET SPICE
n mosfet depletion note
BUZ12AL
BSP149 equivalent
BUZ MOSFET
kp1022
SIPMOS
BUZ41A
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n mosfet depletion pspice model parameters
Abstract: TRANSISTOR SDM M6 STP40N03L-20 transistor m6 l6 NMOS depletion pspice model SDM M6 tt20n 19E-02
Text: STP40N03L-20 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STP40N03L-20 30 V < 0.02 Ω 40 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.016 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STP40N03L-20
175oC
O-220
n mosfet depletion pspice model parameters
TRANSISTOR SDM M6
STP40N03L-20
transistor m6 l6
NMOS depletion pspice model
SDM M6
tt20n
19E-02
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STP38N06
Abstract: n mosfet depletion pspice model parameters NMOS depletion pspice model 19E-02
Text: STP38N06 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STP38N06 60 V < 0.03 Ω 38 A (*) • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STP38N06
100oC
175oC
O-220
STP38N06
n mosfet depletion pspice model parameters
NMOS depletion pspice model
19E-02
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intel 80188
Abstract: ab37 AB-37 80188 80188 application Pierce oscillator 80186 80186 intel x1 transistor 7641 equivalent
Text: AB-37 APPLICATION BRIEF 80186 80188 EFI Drive and Oscillator Operation STEVE FARRER APPLICATIONS ENGINEER February 1996 Order Number 270526-001 Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or copyright for sale and use of Intel products except as provided in
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AB-37
intel 80188
ab37
AB-37
80188
80188 application
Pierce oscillator
80186
80186 intel
x1 transistor
7641 equivalent
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OMNIFET
Abstract: VB020-4 Depletion MOSFET VB020 VN02N equivalent depletion mode current limiter VB921ZVFI equivalent VN02NSP equivalent VN02H VN370B
Text: SMART HIGH SIDE DRIVERS OMNIFETs - AUTOPROTECTED POWER MOSFETs Type VCLAMP RDS on (V) (mΩ) VNW100N04 • VNW50N04 ■ VNP49N04 VNP49N04FI VNV49N04 VNB49N04 VNP35N07 VNP35N07FI VNV35N07 VNB35N07 VNP28N04 VNP28N04FI VNV28N04 VNB28N04 VNP20N07 VNP20N07FI VNV20N07
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VNW100N04
VNW50N04
VNP49N04
VNP49N04FI
VNV49N04
VNB49N04
VNP35N07
VNP35N07FI
VNV35N07
VNB35N07
OMNIFET
VB020-4
Depletion MOSFET
VB020
VN02N equivalent
depletion mode current limiter
VB921ZVFI equivalent
VN02NSP equivalent
VN02H
VN370B
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Untitled
Abstract: No abstract text available
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD210800/ALD210800A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS th = +0.00V QUAD HIGH DRIVE ZERO THRESHOLD MATCHED PAIR GENERAL DESCRIPTION FEATURES & BENEFITS ALD210800A/ALD210800 precision N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These
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ALD210800/ALD210800A
ALD210800A/ALD210800
ALD110800A/ALD110800
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Untitled
Abstract: No abstract text available
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD212900/ALD212900A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS th = +0.00V DUAL HIGH DRIVE ZERO THRESHOLD MATCHED PAIR GENERAL DESCRIPTION FEATURES & BENEFITS ® ALD212900A/ALD212900 precision N-Channel EPAD MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These
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ALD212900/ALD212900A
ALD212900A/ALD212900
ALD110900A/ALD110900
ALD212900A/
ALD212900
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Untitled
Abstract: No abstract text available
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD212900/ALD212900A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS th = +0.00V DUAL HIGH DRIVE ZERO THRESHOLD MATCHED PAIR GENERAL DESCRIPTION FEATURES & BENEFITS ® ALD212900A/ALD212900 precision N-Channel EPAD MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These
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ALD212900/ALD212900A
ALD212900A/ALD212900
ALD110900A/ALD110900
ALD212900A/
ALD212900
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ST VIPER application notes
Abstract: schematic SMPS set top box off-line power supply based on Viper 22 smps lead acid battery charger VIPer Design Software APPLICATION NOTES LM7812 VIPER 22 schematic ST VIPER 22 application notes viper dvd player smps
Text: April 2000 ST's revolutionary VIPer series of off-line switch mode power supply regulators combines an optimized, high voltage, avalanche rugged Vertical Power MOSFET with state-of-the-art PWM circuitry. The result is truly innovative AC to DC conversion that is simpler, quicker and - with component count halved - less expensive.
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PowerSO-10
ST VIPER application notes
schematic SMPS set top box
off-line power supply based on Viper 22
smps lead acid battery charger
VIPer Design Software
APPLICATION NOTES LM7812
VIPER 22 schematic
ST VIPER 22 application notes
viper
dvd player smps
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80C51
Abstract: transistor s6p
Text: Phlips Semiconductors 80C51 Family 80C51 family hardware description • The Serial Interface • The Interrupt System • Reset • The Reduced Power Modes in CMOS devices • The EPROM version of the 80C51 HARDWARE DESCRIPTION This chapter provides a detailed description of the 80C51
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80C51
80C51
SU00559
SU00560
transistor s6p
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IC 2267
Abstract: mec 5025 NEC JAPAN upd7011 c dy128 uPD7011 PD7720 7011c 8085A-2 HPD7720 NVR2
Text: D A T A SHEET NEC M OS INTEGRATED C IR C U IT ELECTRON DEVICE . / / P D - 7 0 1 1 8 -B IT N M O S D / A C O NVERTER The /jPD7011 is a low cost 8-bit NMOS digital-to-analog converter using Enhancement Depletion ED technology. The /-iPD7011 features single +5 V power supply operation and on board voltage reference.
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uPD7011
/PD7720
PD7011
juCOM-87,
/JPD7720
IC 2267
mec 5025
NEC JAPAN upd7011 c
dy128
PD7720
7011c
8085A-2
HPD7720
NVR2
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IC 2267
Abstract: 7011-C PD7011C 7011c UD701 OF 8 pin DIP IC 7011c
Text: D A TA SH EET SEC M O S INTEGRATED C IR C U IT ELECTRON DEVICE / / P D 7 0 1 1 8 -B IT N M O S D /A C O N VERTER The /iPD7011 is a low cost 8-bit NMOS digital-to-analog converter using Enhancement Depletion ED technology. The /j PD70 11 features single +5 V power supply operation and on board voltage reference.
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uPD7011
HPD7720
PD7011
1988M
IC 2267
7011-C
PD7011C
7011c
UD701
OF 8 pin DIP IC 7011c
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til 701
Abstract: photodiode die WAFER MAGNATEC LATERAL MOSFET magnatec mosfets depletion mode mosfet 100 MHz semefab Power MOSFET Wafer pps 501 semelab mosfet lateral
Text: til// 'rr* 'WWr Semefab SILICON DESIGN — WAFER FABRICATION SEMEFAB SCOTLAND LTD. is the Group's wafer fabrication facility based in Glenrothes, Fife. Located adjacent to Compugraphics, Europe's largest independent mask manufacturer, SEMEFAB has a capacity of
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100mm
10OOnm
til 701
photodiode die WAFER
MAGNATEC LATERAL MOSFET
magnatec mosfets
depletion mode mosfet 100 MHz
semefab
Power MOSFET Wafer
pps 501
semelab mosfet lateral
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PN channel MOSFET 10A
Abstract: 1S71 1S74 C035 STD20N06 TJ50D NMOS depletion pspice model diode 935 lg
Text: S G S -T H O M S O N HUSCTIiMOÛS STD20N06 N - CHANNEL ENHANCEMENT MODE ’’ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TYPE V dss RDS on Id STD20N06 60 V < 0.03 n 20 A (*) . . • . . . . ■ TYPICAL RDS(on) = 0.026 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STD20N06
STD20N06
O-251)
O-252)
O-251
O-252
0068771-E
0068772-B
PN channel MOSFET 10A
1S71
1S74
C035
TJ50D
NMOS depletion pspice model
diode 935 lg
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G52020-0
Abstract: VSC10000
Text: PRELIMINARY I H T ÏJ Q Ir VSC10000 mm High Performance SEMICONDUCTOR CORPORATION j 0 0 () A fm y Features • High Performance Characteristics VLSI GaAs Gate Array - D flip-flop; Clk to Q: 480 ps, toggle rate > 1GHz; Clk to Q = 588 ps, worst case (F.O. = 3 ,1 .5mm wire)
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VSC10000
100K/10K/10KH
10K/1
G52020-0
VSC10000
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poly silicon resistor
Abstract: PD43256A Signal Path Designer 630048
Text: *^ ^ APPLICATION NOTE 5 0 BATTERY BACKUP c ir c u it s f o r s ra m s w NEC Electronics Inc. Introduction The evolution of low-power, high-capacity, high-speed memory technologies has led the system designer to novel and highly portable computer designs. As tech
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2N3904
poly silicon resistor
PD43256A
Signal Path Designer
630048
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY VITESSE VSC10000 High Performance 10000 Gate Array SEMICONDUCTOR CORPORATION Features >VLSI GaAs Gate Array • High Performance Characteristics - 13,376 2 input NOR gates in the internal array - Cell architecture is optimized for up to 1100 high drive buffered D-type flip-flops
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VSC10000
100K/10K/10KH
10K/10KH
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