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    NODE Search Results

    NODE Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    SC14SPNODE SF01T Renesas Electronics Corporation Wireless Sensors, Actuators and Base Station Devices Visit Renesas Electronics Corporation
    SN65HVD101RGBT Texas Instruments IO-Link PHY for device nodes 20-VQFN -40 to 105 Visit Texas Instruments Buy
    SN65HVD102RGBT Texas Instruments IO-Link PHY for device nodes 20-VQFN -40 to 105 Visit Texas Instruments Buy
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    NODE Price and Stock

    Allied Vision Technologies GmbH ADAPTER-BOARD-ORIN-NANO-DEV-KIT

    ADAPTER BOARD FOR NVIDIA JETSON
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    DigiKey ADAPTER-BOARD-ORIN-NANO-DEV-KIT Bag 2 1
    • 1 $87.17
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    Thingmagic, A JADAK Brand M6E-NANO-DEVKIT

    EVAL BOARD FOR M6E-NANO
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    DigiKey M6E-NANO-DEVKIT Bulk 1 1
    • 1 $1155.55
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    Cynergy3 Components IWTT-NODE-J

    TRANSMITTER WIRELESS 2.4GHZ TEMP
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    DigiKey IWTT-NODE-J Bulk 1
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    Cynergy3 Components IWTT-NODE-K

    TRANSMITTER WIRELESS 2.4GHZ TEMP
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    DigiKey IWTT-NODE-K Bulk 1
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    NXP Semiconductors SLN-RPK-NODE

    RAPID IOT PROTOTYPING KIT
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    DigiKey SLN-RPK-NODE Bulk 1
    • 1 $62.13
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    Avnet Americas SLN-RPK-NODE Box 15 Weeks 1
    • 1 $64.99151
    • 10 $63.52554
    • 100 $59.12762
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    Newark SLN-RPK-NODE Bulk 2 1
    • 1 $62.17
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    Avnet Silica SLN-RPK-NODE 17 Weeks 1
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    New Advantage Corporation SLN-RPK-NODE 10 1
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    Find more NODE price and stock on Findchips.com

    NODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TAT7469

    Abstract: RES_0402
    Text: TAT7469 CATV 75 Ω pHEMT Dual RF Amplifier Applications • • • • Edge QAM gain stage MDU Output Distribution amplifiers Node Transimpedance Amplifier Product Features • • • • • SOIC-8 package Functional Block Diagram 75 Ω, 50 MHz to 1200 MHz Bandwidth


    Original     		PDF TAT7469 TAT7469 RES_0402

    25CL64B-GA

    Abstract: 25CL64BGA 25cl64 FM25CL64B-Ga
    Text: AEC Q100 Grade 1 Compliant FM25CL64B – Automotive Temp. 64Kb FRAM Serial 3V Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25CL64B FM25CL64B MS-012 FM25CL64B, L3502G1, 25CL64BGA AL3502G1 RIC1104 25CL64B-GA 25cl64 FM25CL64B-Ga

    FM28V100-TG

    Abstract: FM28V100-TGTR tca 335 A
    Text: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM28V100 128Kx8 33MHz 128Kx8 32-pin FM28V100 FM28V100, FM28V100-TG A9482296TG FM28V100-TGTR tca 335 A

    fm25v05-g

    Abstract: FM25V05 fm25v05g
    Text: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V05 512Kb FM25VN05) FM25V05-G FM25VN05-G FM25V05-GTR FM25VN05-GTR FM25V05 fm25v05g

    rg5H20

    Abstract: fm25h20-g FM25H20-DG FM25H20-GTR FM25H20G
    Text: Pre-Production FM25H20 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM • Organized as 256K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25H20 rg5H20 fm25h20-g FM25H20-DG FM25H20-GTR FM25H20G

    vp485

    Abstract: VP485 IC 65HVD485 SN65HVD485E application notes ADM485 application note
    Text: SN65HVD485E DGK D P www.ti.com SLLS612C – JUNE 2004 – REVISED MARCH 2007 HALF-DUPLEX RS-485 TRANSCEIVER FEATURES • • • • • • • DESCRIPTION Bus-Pin ESD Protection Up to 15 kV 1/2 Unit Load–Up to 64 Nodes on a Bus Bus-Open-Failsafe Receiver


    Original     		PDF SN65HVD485E SLLS612C RS-485 TIA/EIA-485A SN75176 SN65HVD485E 10Mbps vp485 VP485 IC 65HVD485 SN65HVD485E application notes ADM485 application note

    tja1080

    Abstract: TJA1080A active suspension TJA1041 TJA1054 Steer-by-Wire
    Text: FlexRay node and star transceiver TJA1080 A Robust communications for complete FlexRay architectures Building on the success of our TJA1080 – the world’s first silicon solution for the FlexRay electrical physical layer – NXP Semiconductors has enhanced its performance to create the


    Original     		PDF TJA1080 TJA1080 TJA1080A. TJA1080A active suspension TJA1041 TJA1054 Steer-by-Wire

    TJA1080A

    Abstract: AEC-Q100 MO-150 SSOP16 TJA1081 guardian
    Text: TJA1081 FlexRay node transceiver Rev. 01 — 15 April 2009 Preliminary data sheet 1. General description The TJA1081 is a FlexRay node transceiver that is fully compliant with the FlexRay electrical physical layer specification V2.1 Rev. A see Ref. 1 and partly complies with


    Original     		PDF TJA1081 TJA1081 TJA1080A AEC-Q100 MO-150 SSOP16 guardian

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		PDF FM28V020 256Kbit FM28V020 FM28V020-TG, FM28V020-TG A9482296TG 32Kx8

    MCF5222X

    Abstract: No abstract text available
    Text: ColdFire Embedded Controllers Specification Sheet MCF5222x Family MCF5222x Applications > ZigBee Control Nodes > 4-channel, 16-bit or 8-channel, 8-bit PWM generator > Security/Access Control Panels > Two periodic interrupt timers PITs for alarm and countdown timing


    Original     		PDF MCF5222x 16-bit 12-bit 32-bit 16-bit 12-bit MCF5222XSPECFS

    Untitled

    Abstract: No abstract text available
    Text: SN65HVD30 – SN65HVD39 www.ti.com SLLS665C – SEPTEMBER 2005 – REVISED JULY 2006 3.3V FULL-DUPLEX RS-485 DRIVERS AND RECEIVERS FEATURES • • • • • • • • • • 1 1/8 Unit-Load Option Available (Up to 256 Nodes on the Bus) Bus-Pin ESD Protection Exceeds 15 kV HBM


    Original     		PDF SN65HVD30 SN65HVD39 SLLS665C RS-485 TIA/EIA-485-A RS-422 SN65HVD50-59

    k1404

    Abstract: transistor k1404 remote control tx-2b TX-2B RX-2B rx 2b DML4 DML4 Calibration tx-2b equivalent RX-2B TX-2B RX-2B, TX-2B
    Text: Preliminary Data Sheet November 2000 T9000 ISDN Network Termination Node NTN Device 1 Description • The T9000 is an ISDN network termination node device that is highly integrated and provides a lowcost solution to support the following: General-purpose I/O (GPIO) ports with interrupt


    Original     		PDF T9000 T9000 Hz--200 DS01-037ISDN DS00-181ISDN) k1404 transistor k1404 remote control tx-2b TX-2B RX-2B rx 2b DML4 DML4 Calibration tx-2b equivalent RX-2B TX-2B RX-2B, TX-2B

    CRC16

    Abstract: DS2502 DS2502P
    Text: DS2502–E64 PRELIMINARY DS2502–E64 IEEE EUI–64 Node Address Chip FEATURES TO–92 TSOC PACKAGE factory programmed 64–bit node address chip EUI–64 with 768 bits user–programmable OTP–EPROM communicates with the economy of one signal plus ground


    Original     		PDF DS2502 CRC16, CRC16 DS2502P

    AD8429

    Abstract: RFI filter schematic diagram 12v AD8235 AD8236 AD8428
    Text: FEATURES Fixed gain of 2000 Access to internal nodes provides flexibility Low noise: 1.5 nV/√Hz input voltage noise High accuracy dc performance Gain drift: 5 ppm/°C Offset drift: 0.3 V/°C Gain accuracy: 0.05% CMRR: 140 dB min Excellent ac specifications


    Original     		PDF AD8428 AD8428ARZ AD8428ARZ-RL AD8428BRZ AD8428BRZ-RL 12407-A D09731-0-4/12 AD8429 RFI filter schematic diagram 12v AD8235 AD8236 AD8428

    RLDRAM

    Abstract: content addressable memory low power ternary "Content Addressable Memory" ternary
    Text: RLDRAM 2 Memory: Addressing Networking Memory Requirements ISSI’s RLDRAM 2 Memory is a reduced-latency DRAM that offers fast random access 20ns tRC , making RLDRAM ideal for communication applications ranging from access nodes to core routers. table applications. Additionally, RLDRAM’s large density


    Original     		PDF 288Mb 576Mb 400MHz 400MHz RLDRAM content addressable memory low power ternary "Content Addressable Memory" ternary

    Untitled

    Abstract: No abstract text available
    Text: OPTO SIEM ENS MME D • ÖE3b32b DD OM b^ M S IE X h RP-12C Mask-Diffused GaAsP LED PART NO. 2680-7075 W '9? P -m e ta l a node D iffu sio n Barrier Epita xia l La y e r Substrate N -m e ta i (cathode) DESCRIPTION TYPICAL DEVICE PARAMETERS Siemens RP-12C is a mask-diffused GaAsP lightemitting diode. With a bright and uniform 655 nm


    OCR Scan     		PDF E3b32b RP-12C -10nA

    AP-700

    Abstract: No abstract text available
    Text: • Single Digit Displays Part Number Shape 0 5" l2.7mm 0 52"(13 2mm) fiSr jfiïJ 0.56"(14.2mm) jfml b i Emitting Color Emitting Material Wave Length (nm) Luminous Intensity IF=10mA (ucd) Min. Max. Common D H R 12A / DHR12C Red GaP 700 900 - 2200 A node / C athode


    OCR Scan     		PDF DHR12C DUR12C DUG12C DUY12C DHR13C DUR13C DMR13C DUG13C DUY13C -UG14C-1 AP-700

    Untitled

    Abstract: No abstract text available
    Text: 2 4 5 7 REVISIONS ISS r DESCRIPTION\RER REQUEST\DATE ZONE I C\l ' - • F 1 -0 1 RECOMMENDED CABLE STRIPPING D IM ’S E RECOMMENDED MOUNTING NODE D CABL ES : - -FERRULE R G - 1 79 L910 /2 2 LX 2 2 LX 2 LLEX 2 C R IM PIN G TO OLS C P/''LI 2 2 7 - 9 + 4 M 2 2 5 2 0 / 5- 01


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: BIGG HR SIZL SING I L C O L O R L t D DI SPLAYS C h ip P a r t N> -1 Peak D ig it S iz e E', rn i 1 1 c d Cummon Common A node C athode B S -A F 0 1 R D B S -C F 0 1 R D B S -A F 0 5 R D B S -C F 0 5 R D B S -A F 0 5 R E B S -C F 0 5 R E B S -A F 0 2 R D


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: m o le x FEATURES AND SPECIFICATIONS Network Size D eviceNet is a low-cost communications link to connect industrial devices such as lim it switches, photoelectric sensors, U p to 6 4 nodes Net work length Selectable end-to-end netw ork distance varies with speed


    OCR Scan     		PDF

    COL-12

    Abstract: No abstract text available
    Text: MULT] - C O L O R 5*7 D O T P a r t Ko. Digit C o lum n Common A node Si;e 1.20" H igh ; ! 1 ; Chip Column Co m m o n catnoue BM -10EG57M D E m itted o o o o o o o o o o o o o o Peak 635 45 100 30 150 1.9 2.5 8.0 G reen 568 30 100 30 150 2.1 25 9.0 O range


    OCR Scan     		PDF -10EG57M -10EG57ND -20EG57M -20EG57ND -10EG -20EC COL-12

    Untitled

    Abstract: No abstract text available
    Text: HFM1200 Ethernet Receiver APPLICATION continued Resistor R a d j adjusts the SQ threshold upward. A 70 [jA current from this node to ground increases the threshold by 1 dB of optical power. R a d j ' s high side is at 4.3 V (nominal). The open collector output (PKT) indicates presence of a


    OCR Scan     		PDF HFM1200 HFM1200 HFM1200-331 0U2227M

    "Rectifier Tube"

    Abstract: No abstract text available
    Text: EL C1K GRID CONTROL RECTIFIER TUBE T A N T A L U M AN OD E AND X E N O N GAS F IL L IN G M ax im u m R a te d A node C u rre n t D -c . M e te r V a lu e -C o n tin u o u s A v erag in g T im e O sc illo g ra p h P eak -C o n tin u o u sly r e c u rr in g


    OCR Scan     		PDF A4-10 "Rectifier Tube"

    thyratron

    Abstract: Scans-0017384
    Text: 2D2I In d u s tr ia l T y p e 4 MAX A TYPE 2D2I " 1 MINIATURE H OT C A T H O D E MCO II III GAS FILLED T H YR A T R O N R A T IN G S Heater V o l t a g e . Heater C u r r e n t . Cathode Heating Tim e . Peak Forward A node Voltage Peak Inverse Voltage


    OCR Scan     		PDF