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    NPN/SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE Search Results

    NPN/SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6E3KJ152MN4A Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ101KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ331KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    NPN/SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    n24 transistor

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION „ The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are


    Original     		MMDT8050S MMDT8050S MMDT8050SL-AL6-R MMDT8050SG-AL6-R OT-363 MMDT8050SL-AL6-R QW-R218-012 n24 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION „ The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE SAT performance and the transistor elements are


    Original     		MMDT8150 MMDT8150 MMDT8150L-AL6-R MMDT8150G-AL6-R MMDT8150L-AL6-R OT-363 QW-R218-017 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD TC200 Preliminary NPN EPITAXIAL SILICON TRANSISTOR EPITAXIAL PLANAR NPN TRANSISTOR „ DESCRIPTION The UTC TC200 is an epitaxial planar NPN transistor; it uses UTC’s advanced technology to provide the customers with high DC


    Original     		TC200 TC200 TC200L-x-T92-B TC200G-x-T92-B TC200L-x-T92-K TC200G-x-T92-K QW-R201-087 PDF

    Silicon NPN Epitaxial Planar Type

    Abstract: NPN Silicon Epitaxial Planar Transistor 2SD2098
    Text: 2SD2098 NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 Description The 2SD2098 is an epitaxial planar type NPN silicon transistor. Features * Excellent DC Current Gain Characteristics * Low Saturation Voltage, Typically VCE SAT =0.25V


    Original     		2SD2098 OT-89 2SD2098 100MHz 01-Jun-2002 Silicon NPN Epitaxial Planar Type NPN Silicon Epitaxial Planar Transistor PDF

    e50u

    Abstract: 2SD2098 BCP2098 NPN Silicon Epitaxial Planar Transistor
    Text: BCP2098 NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogan & lead-free Description SOT-89 The BCP2098 is an epitaxial planar type NPN silicon transistor. Features * Excellent DC Current Gain Characteristics


    Original     		BCP2098 OT-89 BCP2098 50VEB 100MHz 01-Jun-2002 2SD2098 e50u 2SD2098 NPN Silicon Epitaxial Planar Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. 1 FEATURES *Low VCE sat : VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) *Complement the 2SB1132. SOT-89 1:EMITTER


    Original     		2SD1664 2SD1664 500mA/50mA) 2SB1132. OT-89 QW-R208-025 PDF

    2SD1664

    Abstract: 2SB1132
    Text: UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. 1 FEATURES *Low VCE sat : VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) *Complement the 2SB1132. SOT-89 1:EMITTER


    Original     		2SD1664 2SD1664 500mA/50mA) 2SB1132. OT-89 QW-R208-025 2SB1132 PDF

    BCP2098

    Abstract: No abstract text available
    Text: BCP2098 NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 DESCRIPTION The BCP2098 is an epitaxial planar type NPN silicon transistor. 4 1 FEATURES   2 3


    Original     		BCP2098 OT-89 BCP2098 BCP2098-Q BCP2098-R 100MHz 19-May-2011 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3834 NPN SILICON TRANSISTOR SWITCH NPN TRANSISTOR  DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicon transistor.  FEATURES * Humidifier, DC-DC converter, and general purpose  ORDERING INFORMATION


    Original     		2SC3834 2SC3834 2SC3834L-TA3-T 2SC3834G-TA3-T O-220 2SC3834L-T3P-T 2SC3834G-T3P-T QW-R203-026 PDF

    2SC3834

    Abstract: No abstract text available
    Text: UTC 2SC3834 NPN EPITAXIAL SILICON TRANSISTOR SWITCH NPN TRANSISTOR DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicon transistor. APLLICATION 1 *Humidifier,DC-DC converter,and general purpose. TO-220 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C


    Original     		2SC3834 2SC3834 O-220 QW-R203-026 PDF

    Untitled

    Abstract: No abstract text available
    Text: Qs.iisy <£fLmi-Conciuctoi '[P'loducti., Una. 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1324 is a silicon NPN epitaxial planar type transistor designed


    Original     		2SC1324 770MHz 770MHz. 500MH2. PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3834 NPN SILICON TRANSISTOR SWITCH NPN TRANSISTOR „ DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicon transistor. „ FEATURES * Humidifier, DC-DC converter, and general purpose „ ORDERING INFORMATION Ordering Number


    Original     		2SC3834 2SC3834 2SC3834L-TA3-T 2SC3834G-TA3-T O-220 QW-R203-026 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3834 NPN SILICON TRANSISTOR SWITCH NPN TRANSISTOR „ DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicon transistor. „ FEATURES * Humidifier, DC-DC converter, and general purpose Lead-free: 2SC3834L Halogen-free: 2SC3834G


    Original     		2SC3834 2SC3834 2SC3834L 2SC3834G 2SC3834-TA3-T 2SC3834L-TA3-T 2SC3834G-TA3-T O-220 QW-R203-026 PDF

    transistor 12v 1A NPN

    Abstract: 2sc3834 Silicon NPN Epitaxial Planar Type
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3834 NPN SILICON TRANSISTOR SWITCH NPN TRANSISTOR „ DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicon transistor. „ FEATURES * Humidifier, DC-DC converter, and general purpose Lead-free: 2SC3834L Halogen-free: 2SC3834G


    Original     		2SC3834 2SC3834 2SC3834L 2SC3834G 2SC3834-TA3-T 2SC3834L-TA3-T 2SC3834G-TA3-T O-220 QW-R203-026 transistor 12v 1A NPN Silicon NPN Epitaxial Planar Type PDF

    2SC2312

    Abstract: 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb
    Text: MITSUBISHI SILICON TRANSISTOR RF POWER TRANSISTOR' 2SC2312 27MHz,12V, 17W NPN Epitaxial •MITSUBISHI ELECTRIC CORP. Planar Type GENERAL DISCRIPTION ' MITSUBISHI 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operating


    OCR Scan     		2SC2312 27MHz 27MHz, -30dB -62dB -65dB. 2SC2312 100mA 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb PDF

    2SC1947 equivalent

    Abstract: 2sc1947 RF Power Amplifiers 1P H transistor
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1947 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm


    OCR Scan     		2SC1947 175MHz 175MHz 2SC1947 2SC1947 equivalent RF Power Amplifiers 1P H transistor PDF

    air variable capacitor

    Abstract: POWER TRANSISTOR 2sC3102 2sc3102 transistor CAPACITOR MURATA tta series 2SC3102 2SC310 mica capacitor mica material capacitor murata pir
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi­ OUTLINE DRAWING cally designed for high power amplifiers applications in UHF band. Dimensions in mm R1 FEATURES


    OCR Scan     		2SC3102 2SC3102 PoS60W, 520MHz, 520MHz. 520MHz) 100pF to10pF air variable capacitor POWER TRANSISTOR 2sC3102 2sc3102 transistor CAPACITOR MURATA tta series 2SC310 mica capacitor mica material capacitor murata pir PDF

    2SC1729

    Abstract: 1 w NPN EPITAXIAL PLANAR TYPE
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1729 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio amplications. Dimensions in mm FEATURES • •


    OCR Scan     		2SC1729 175MHz 175MHz. T-31E 175MHz 1 w NPN EPITAXIAL PLANAR TYPE PDF

    transistor D 2331

    Abstract: 2331 TRANSISTOR T31B
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed fo r RF power amplifiers in 1.65GHz. 4 + 0.5 C1.5MAX C1.5MAX FEATURES


    OCR Scan     		2SC4838 2SC4838 65GHz. 65GHz, transistor D 2331 2331 TRANSISTOR T31B PDF

    Untitled

    Abstract: No abstract text available
    Text: Central" CZT3019 Sem iconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT3019 type isan NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded inasurfacemountpackage,designedforhigh current general purpose amplifier applications.


    OCR Scan     		CZT3019 TheCENTRALSEMICONDUCTORCZT3019 OT-223 100jliA 150mA, 500mAJ 500mA PDF

    2SC1324

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1324 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1324 is a silicon NPN epitaxial planar type transistor designed for industrial use RF broadband amplifiers from VHF to UHF band. Dim ensions in mm FEATURES •


    OCR Scan     		2SC1324 2SC1324 770MHz PDF

    12w 5d

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band 7.2 volts operation applications. Dimensions in mm FEATURES


    OCR Scan     		2SC3629 2SC3629 520MHz, 12w 5d PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1968A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1968A is a silicon NPN epitaxial planar type transistor de­ signed for RF power amplifiers on UHF band mobile radio applications. Dimensions in mm FEATURES •


    OCR Scan     		2SC1968A 2SC1968A 470MHz 470MHz. PDF

    2sc1968

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1968A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1968A is a silicon NPN epitaxial planar type transistor de­ signed for RF power amplifiers on UHF band mobile radio applications. Dimensions in mm FEATURES •


    OCR Scan     		2SC1968A 2SC1968A 470MHz 470MHz. 2sc1968 PDF