transistor bc238
Abstract: BC239 NPN transistor BC238 datasheet transistor bc237 bc337 BC237 BC238 BC239 BC238 NPN transistor download datasheet BC239 NPN transistor download datasheet 15KHZ
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC237 A, B, C BC238 A, B, C BC239 B, C TO-92 Plastic Package General Purpose Transistor, Best Suited For use In Driver Stages Of Audio
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BC237
BC238
BC239
BC237
BC238
BC239
C-120
transistor bc238
BC239 NPN transistor
BC238 datasheet
transistor bc237 bc337
BC238 NPN transistor download datasheet
BC239 NPN transistor download datasheet
15KHZ
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BC238 NPN transistor download datasheet
Abstract: lowest noise audio NPN transistor bc237 bc337 bc239 BC239 NPN transistor download datasheet BC238 TRANSISTOR W2 bc238 data sheet BC238 datasheet transistor bc237 datasheet
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC237 A, B, C BC238 A, B, C BC239 B, C TO-92 Plastic Package General Purpose Transistor, Best Suited For use In Driver Stages Of Audio
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BC237
BC238
BC239
BC237
BC238
BC239
C-120
BC238 NPN transistor download datasheet
lowest noise audio NPN
transistor bc237 bc337
BC239 NPN transistor download datasheet
TRANSISTOR W2
bc238 data sheet
BC238 datasheet
transistor bc237 datasheet
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y 331 Transistor
Abstract: No abstract text available
Text: PN918 / MMBT918 MMBT918 PN918 C C B E TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*
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PN918
MMBT918
PN918
OT-23
y 331 Transistor
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marking xa
Abstract: XA MARKING CODE CMPTA29 sot 23 marking code c29
Text: Central C M P T A 29 Sem iconductor Corp. HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: T he CENTRAL S E M IC O N D U C TO R CMPTA29 is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount
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CMPTA29
OT-23
CMPTA29
100mA,
100mA
100mA
100MHz
marking xa
XA MARKING CODE
sot 23 marking code c29
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transistor smd zG
Abstract: npn smd zg smd transistor 513 BFG17 BFG17A smd jpS SMD transistor ZG
Text: „. e . . . • P hilips Sem iconductors DDEM7S1 D5b BIAPX N AUER PHIL I P S / D I S C R E T E P roduct specification L7E D NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with
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BFG17A
OT143.
transistor smd zG
npn smd zg
smd transistor 513
BFG17
BFG17A
smd jpS
SMD transistor ZG
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bfq34 application note
Abstract: ON4497 BFQ34 sf 122 transistor
Text: Philips Semiconductors h ^ 5 3 1 3 1 DD3 1 S5 Û G3 Ö • A P X ^ P r o d u c ts p e c ific a t i^ NPN 4 GHz wideband transistor BFQ34 N AriER P H I L I P S / D I S C R E T E fc.'JE » PINNING DESCRIPTION NPN transistor encapsulated in a 4 lead SOT 122A envelope with a
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DD31S5Ã
BFQ34
OT122A
ON4497)
bfq34 application note
ON4497
BFQ34
sf 122 transistor
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philips bfq
Abstract: BFQ263 BFQ263A RK 100
Text: Product specification Philips S em iconductors - r & 3 ~ DESCRIPTION > 5 BFQ263; BFQ263A NPN 1 GHz video transistors • 5bE D PHILIPS IN TE RNATIONAL c 711062t. 0045b4û 331 « P H I N PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with
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BFQ263;
BFQ263A
711062b
0045biÂ
711Qfl2b
T-33-05
philips bfq
BFQ263
BFQ263A
RK 100
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3004x
Abstract: antenna amplifiers Transistor BFX 25 BFX55 63310-A Q60206-X55
Text: BFX55 NPN Transistor for VHF output stages in antenna amplifiers B F X 5 5 is an epitaxial NPN silicon planar transistor in a case 5 C 3 DIN 41 873 T O -39 . The colle cto r has been electrically connected to the case. The transistor is especially suitable fo r use in the VHF o u tp u t stages o f channel- and w ideband antenna
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BFX55
BFX55
Q60206-X55
50ff1A
3004x
antenna amplifiers
Transistor BFX 25
63310-A
Q60206-X55
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1581m
Abstract: nec ps2021 PS2021 M5010
Text: PHOTO CO U PLER PS2021 PHOTO CO U PLER High Isolation Voltage Single Transistor — n epo c s e r ie s - D E S C R IP T IO N The PS2021 is an optically coupled Isolator containing a G aA s light emitting diode and an NPN silicon photo transistor. FEA TU RES
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PS2021
PS2021
J22686
1581m
nec ps2021
M5010
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2N3738
Abstract: 3302N
Text: * 2 N 3738 NPN SILICON TR AN SISTO R , D IFFU SED M ESA TRANSISTOR NPN SILICIUM, MESA DIFFUSE Preferred device Dispositif recommandé L F large signal power amplification Amplification B F grands signaux de puissance 225 V v C EO High voltage switching Commutation haute tension
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CB-72on
CB-72
2N3738
3302N
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bbS3T31 0015273 0 ObE » RZ3135B50W T -33-13 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power amplifier w ith a frequency range o f 3,1 to 3,5 GHz.
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bbS3T31
RZ3135B50W
33-ia.
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transistor NEC D 822 P
Abstract: transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic
Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R FEATURES • PACKAGE DIMENSIONS High gain in millimeters | S 21 | 2 = 12 dB TYP, @ f = 1 GHz, V c e = 10 V , Ic = 20 mA
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2SC5336
2SC3357
transistor NEC D 822 P
transistor NEC B 617
NEC D 822 P
NEC B 617
NEC D 809
50/transistor NEC D 822 P
NEC D 809 F
P1093
4435 power ic
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Untitled
Abstract: No abstract text available
Text: N E C E L EC T RO NI C S INC 3QE D • b4E7S2S 0 0 2 ^ 4 0 fl ■ 3 PHOTO COUPLER PS2021 PHOTO C O U P LER High Isolation Voltage Single Transistor — n ep o c s e r ie s — D E S C R IP T IO N The PS2021 is an optically coupled isolator containing a G aAs light emitting diode and an NPN silicon photo transistor.
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PS2021
PS2021
T-41-83
J22686
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RX1011B250Y
Abstract: No abstract text available
Text: DEVELOPMENT ObE data D b b S3 T3 1 N AME R 0015175 PH ILIPS/D ISCRETE nr- PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C broadband pulse power amplifiers operating in the 1.03 to 1.09 GHz frequence range.
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DD1S17S
RX1011B250Y
VCB-50
VCE-20
0Q1S17Ã
T-33-15
RX1011B250Y
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE DbE D • ^ 5 3 1 3 1 QD15E37 7 A RZ2731B60W PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base ciass-C broadband pulse power amplifier w ith a frequency range o f 2,7 to 3,1 GHz.
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QD15E37
RZ2731B60W
bbS3T31
DD1S241
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nec ps2021
Abstract: T-AV83 PS2021 1581m
Text: N E C ELECTRONICS INC 3QE D • T - W* f 3 b4E7S2S 002=1^40 fl ■ PHOTO COUPLER P S 2021 PHO TO COUPLER High Isolation Voltage Single Transistor — n e p o c s e r ie s — D E S C R IP T IO N The PS2021 is an optically coupled isolator containing a GaAs light em itting diode and an NPN silicon photo transistor.
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PS2021
PS2021
J22686
nec ps2021
T-AV83
1581m
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c 2579 power transistor
Abstract: c 2579 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Frequency Transistor NPN Silicon M PS5179 M otorola Preferred Device COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating C ollector-Em ltter Voltage Symbol Value Unit Vdc Vdc VCEO 12 C ollector-B ase Voltage VCBO 20 E m itter-B ase Voltage
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PS5179
334fl
c 2579 power transistor
c 2579 transistor
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samsung tv
Abstract: 4142
Text: SAMSUNG INC S EM I C ON D U C T O R KSC1520A IME 0007542 NPN EPITAXIAL SILICON TRANSISTOR " r-3 2 > - c n ~ COLOR TV CHROMA OUTPUT TO-202 • High Collector-Emitter \foltaga Veto =300V • Current Gain-Bandwldth Product fT=80MHz Typ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSC1520A
O-202
80MHz
GQG77fe
samsung tv
4142
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KSD569
Abstract: KSB601 KSB708 KSD560 KSD568 C 3311 transistor
Text: ^SAMSUNG S E M I C O N D U C T O R m e I NC d I oaoTboa NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 T ~ LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol
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KSD560
KSB601
-r-55
O-220
T-33-11
KSD569
KSB601
KSB708
KSD560
KSD568
C 3311 transistor
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2SC5012-T1
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •
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2SC5012
2SC5012-T1
2SC5012-T2
2SC5012-T1
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TRANSISTOR GB 558
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •
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2SC5013
2SC5013-T1
2SC5013-T2
TRANSISTOR GB 558
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RZ2833B15W
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE Oh E D UÈ t a b 's T ^ l X 0D1SE43 S • “ T - 33-13 MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power am plifier, operating in the 2.8 to 3.3 GHz frequency range.
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0015E43
RZ2833B15W
T-33-13
RZ2833B15W
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Untitled
Abstract: No abstract text available
Text: SAMSUNG S E M IC O N D U C T O R INC KSC1098 1ME D | 7^1.4142 0007S33 4 NPN EPITAXIAL SILICON TRANSISTOR ' - 3 5 - c n LOW FREQUENCY AMPLIFIER • • • • Complement to KSA636 Collector-Base Voltage Vcao=7UV Collector Current lc =2 A Collector Dissipation Pc=10W Tc=25<,C
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0007S33
KSC1098
KSA636
GQG77fe
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transistor PT 4500
Abstract: No abstract text available
Text: 17 E D • TS'JÛTbM □□□□331 T POliJERTECH INC "BIG IDEAS IN BIG POWER” ■ PowerTecri 150AMPERES PT-4500 T-SVIS HIGH VOLTAGE SILICON NPN TRANSISTOR FEATURES V c E s a t . 0.75 @ 100 A hF E .
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PT-4500
300/Ltsec
100/iA
transistor PT 4500
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