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    NPN 1.5A Search Results

    NPN 1.5A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    NPN 1.5A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor pnp VCEO 12V Ic 1A

    Abstract: ZXTD6717E6 ZXTD6717E6TA ZXTD6717E6TC transistor pnp 12V 1A Continuous Current Peak
    Text: ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE sat =0.1V; IC= 1.5A; PNP: VCEO=-12V; VCE(sat)=-0.175V; IC= -1.25A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very


    Original     		PDF ZXTD6717E6 OT23-6 OT23-6 transistor pnp VCEO 12V Ic 1A ZXTD6717E6 ZXTD6717E6TA ZXTD6717E6TC transistor pnp 12V 1A Continuous Current Peak

    Untitled

    Abstract: No abstract text available
    Text: ZXTD6717E6 COM PLEM ENTARY NPN/ PNP LOW SATURATION DUAL TRANSISTORS SUM M ARY NPN: V CEO=15V; V CE sat =0.1V; IC= 1.5A; PNP: V CEO=-12V; V CE(sat)=-0.175V; IC= -1.25A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very


    Original     		PDF ZXTD6717E6 OT23-6

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD D4120P Preliminary NPN SILICON TRANSISTOR MEDIUM VOLTAGE FAST-SWITCHING NPN TRANSISTOR „ DESCRIPTION The UTC D4120P is a medium voltage fast-switching NPN power transistor. It is characterized by medium breakdown voltage, high


    Original     		PDF D4120P D4120P D4120PL-T92-B D4120PG-T9s

    D4120PL

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD D4120P Preliminary NPN SILICON TRANSISTOR MEDIUM VOLTAGE FAST-SWITCHING NPN TRANSISTOR „ DESCRIPTION The UTC D4120P is a medium voltage fast-switching NPN power transistor. It is characterized by medium breakdown voltage, high


    Original     		PDF D4120P D4120P D4120PL-T92-B D4120PG-T92-B QW-R201-084 D4120PL

    VCEO80V

    Abstract: FMMT620 FMMT620TA FMMT620TC
    Text: FMMT620 SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 1.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users


    Original     		PDF FMMT620 INFORMA26100 VCEO80V FMMT620 FMMT620TA FMMT620TC

    transistor D4203D

    Abstract: D4203D D4203 d4203d TRANSISTOR QW-R204-026 D4203DL-T60-K to-126 npn switching transistor 400v npn transistor 400V
    Text: UNISONIC TECHNOLOGIES CO., LTD D4203D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC D4203D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high


    Original     		PDF D4203D D4203D QW-R204-026 transistor D4203D D4203 d4203d TRANSISTOR D4203DL-T60-K to-126 npn switching transistor 400v npn transistor 400V

    CPH3215

    Abstract: SC-95
    Text: CPH6539 Ordering number : ENA1756 SANYO Semiconductors DATA SHEET CPH6539 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Features • Small-sized package with two NPN transistors CPH3215 equivalency contained in one package • VCEO=30V, IC=1.5A


    Original     		PDF CPH6539 ENA1756 CPH3215 A1756-4/4 SC-95

    Untitled

    Abstract: No abstract text available
    Text: CPH6539 Ordering number : ENA1756A SANYO Semiconductors DATA SHEET CPH6539 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Features • Small-sized package with two NPN transistors CPH3215 equivalency contained in one package • VCEO=30V, IC=1.5A


    Original     		PDF CPH6539 ENA1756A CPH3215 A1756-6/6

    CPH6539

    Abstract: marking 62712
    Text: CPH6539 Ordering number : ENA1756A SANYO Semiconductors DATA SHEET CPH6539 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Features • Small-sized package with two NPN transistors CPH3215 equivalency contained in one package • VCEO=30V, IC=1.5A


    Original     		PDF ENA1756A CPH6539 CPH3215 A1756-6/6 CPH6539 marking 62712

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003DH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003DH 13003DH 13003DHL-x-TM3-T 13003DHL-x-T60-K QW-R223-011

    13003ADA

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003ADA 13003ADA 13003ADAL-TM3-T 13003ADAL-T60-K QW-R223-016

    13003AD

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003ADA 13003ADA 13003ADAL-TM3-T 13003ADAL-T60-F-at QW-R223-016 13003AD

    4124DL

    Abstract: 4124dl power transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD 4124D NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC 4124D is a middling voltage NPN power transistor. it uses UTC’s advanced technology to provide customers with high


    Original     		PDF 4124D 4124D 4124DL-T92-B 4124DG-T92-B 4124DL-T92-K 4124DG-T92-K 4124DL-T92-R 4124DG-T92-R 4124DL-T60-K 4124DL 4124dl power transistor

    13003ad

    Abstract: 13003ADA
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003ADA 13003ADA 13003ADAL-TM3-T 13003ADAL-T60-F-K 13003ADAL-T92-F-B 13003ADAL-T9at QW-R223-016 13003ad

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003DH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003DH 13003DH 13003DHL-x-TM3-T 13003DHL-x-T60-F-K 13003DHL-x-T92-A-B 13003DHL-x-Tat QW-R223-011

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DW Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003DW is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003DW 13003DW 13003DWL-x-TM3-T 13003DWL-x-T60-K 13003DWL-x-T92-B 13003DWL-x-T92-K QW-R223-012

    he8050l

    Abstract: audio output TRANSISTOR NPN
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8050 HE8050 HE8550 O-92NL HE8050L HE8050-x-T9N-A-B HE8050L-x-T9N-A-B HE8050-x-T9N-A-K HE8050L-x-T9N-A-K O-92NL he8050l audio output TRANSISTOR NPN

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8051 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR „ DESCRIPTION The UTC HE8051 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8051 HE8051 HE8551 HE8051L-x-T92-B HE8051L-x-T92-K HE8051G-x-T92-B HE8051G-x-T92-K QW-R201-046 HE80lues

    he8050

    Abstract: HE8550 HE8050G
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR „ DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8050 HE8050 HE8550 HE8050-x-AB3-R HE8050-x-AE3-R HE8050-x-T92-B HE8050-x-T92-K HE8050-x-T9N-B HE8050-x-T9N-K HE8050L-x-AB3-R HE8550 HE8050G

    he8050l

    Abstract: he8050 HE8050-x-AB3-R HE8050G DA QW he8050 d HE8550
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR „ DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8050 HE8050 HE8550 HE8050L HE8050G HE8050-x-AB3-R HE8050-x-AE3-R HE8050-x-T92-B HE8050-x-T92-K HE8050-x-T9N-B he8050l HE8050-x-AB3-R HE8050G DA QW he8050 d HE8550

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8050 HE8050 HE8550 HE8050L-x-AB3-R HE8050G-x-AB3-R HE8050L-x-AE3-R HE8050G-x-AE3-R HE8050L-x-T92-B HE8050G-x-T92-B HE8050L-x-T92-K

    bd139 application note

    Abstract: BD139 NPN BD139 application
    Text: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES *High current max.1.5A *Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS


    Original     		PDF BD139 O-126 Tmb70 QW-R204-007 bd139 application note BD139 NPN BD139 application

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8050 HE8050 HE8550 HE8050L-x-AB3-R HE8050G-x-AB3-R OT-89 HE8050L-x-AE3-R HE8050G-x-AE3-R OT-23 HE8050L-x-T92-B

    Untitled

    Abstract: No abstract text available
    Text: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES *High current max.1.5A *Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-251 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS


    Original     		PDF BD139 O-251 150mA 500mA 150mA, 100MHz QW-R213-010