NTE2311
Abstract: npn 1000V 15A NPN Transistor VCEO 1000V
Text: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V
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NTE2311
NTE2311
npn 1000V 15A
NPN Transistor VCEO 1000V
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2SC2688
Abstract: 2SC2688L NPN Transistor VCEO 1000V
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES 1 * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF
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2SC2688
2SC2688
2300pF)
50MHz
-10mA)
O-126
2SC2688L
2SC2688-x-T60-A-K
2SC2688L-x-T60-A-K
2SC2688L
NPN Transistor VCEO 1000V
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2SC2688
Abstract: NPN Transistor VCEO 1000V TRANSISTOR 023
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF
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2SC2688
2SC2688
2300pF)
50MHz
-10mA)
2SC2688L-x-T60-K
2SC2688G-x-T60-K
2SC2688L-x-T6C-K
2SC2688G-x-T6C-K
O-126
NPN Transistor VCEO 1000V
TRANSISTOR 023
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NPN Transistor VCEO 1000V
Abstract: 2SC2688 2SC2688L transistor T 023 XT60
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES 1 * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF
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2SC2688
2SC2688
2300pF)
50MHz
-10mA)
O-126
2SC2688L
2SC2688-x-T60-K
2SC2688L-x-T60-K
NPN Transistor VCEO 1000V
2SC2688L
transistor T 023
XT60
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2SC2688
Abstract: NPN Transistor VCEO 1000V 2SC2688L QW-R204-023 NPN SILICON TRANSISTOR
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF
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2SC2688
2SC2688
2300pF)
50MHz
-10mA)
2SC2688L-x-T60-K
2SC2688G-x-T60-K
O-126
QW-R204-023
NPN Transistor VCEO 1000V
2SC2688L
NPN SILICON TRANSISTOR
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2SC5264
Abstract: 2SC5264LS 2079d
Text: Ordering number:ENN5287A NPN Triple Diffused Planar Silicon Transistor 2SC5264LS Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.
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ENN5287A
2SC5264LS
2079D
2SC5264]
O-220FI
2SC5264
2SC5264LS
2079d
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ta1238
Abstract: TA-1238 2SC5304 2SC5304LS
Text: Ordering number:ENN5883A NPN Triple Diffused Planar Silicon Transistor 2SC5304LS Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.
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ENN5883A
2SC5304LS
2079D
2SC5304]
O-220FI
ta1238
TA-1238
2SC5304
2SC5304LS
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ta1238
Abstract: TA-1238 2SC5304 EN5883
Text: Ordering number:EN5883 NPN Triple Diffused Planar Silicon Transistor 2SC5304 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm
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EN5883
2SC5304
2079B
2SC5304]
O-220FI
ta1238
TA-1238
2SC5304
EN5883
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2069B
Abstract: 2SC5420
Text: Ordering number:EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm
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EN5762
2SC5420
2069B
2SC5420]
2069B
2SC5420
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d 5287
Abstract: 2SC5264
Text: Ordering number:ENN5287 NPN Triple Diffused Planar Silicon Transistor 2SC5264 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm
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ENN5287
2SC5264
2079C
2SC5264]
O-220FI-LS
10Ltd.
d 5287
2SC5264
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2069B
Abstract: 2SC5420
Text: Ordering number:EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm
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EN5762
2SC5420
2069B
2SC5420]
2069B
2SC5420
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NPN Transistor VCEO 1000V
Abstract: 2SC5420 1000V 20A transistor
Text: Ordering number : EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . • High reliability (Adoption of HVP process). • Adoption of MBIT process.
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EN5762
2SC5420
2069B-SMP-FD
2SC5420]
NPN Transistor VCEO 1000V
2SC5420
1000V 20A transistor
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Untitled
Abstract: No abstract text available
Text: ^Szmi-Conduetoi ^Products., {Inc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MJF18006 Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- 2 :V(BR)CBO=1000V(Min)
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MJF18006
O-220F
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Untitled
Abstract: No abstract text available
Text: *L, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJE18008 Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- •>. ^ :V (B R)CBo= 1000V(Min) • High Switching Speed
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MJE18008
O-220C
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Untitled
Abstract: No abstract text available
Text: , Una. LS TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJE18004 Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage: V(BR)CBO= 1000V(Min) • High Switching Speed PIN 1.BASE
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MJE18004
O-220C
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Untitled
Abstract: No abstract text available
Text: , One. u TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 Silicon NPN Power Transistor MJF18004 DESCRIPTION • Collector-Base Breakdown Voltage:V(BR)CBO=1000V(Min) • High Switching Speed *W ! •?''••
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MJF18004
O-220F
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2sc2688
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD 2SC2688 NPN SILICON TRANSISTOR N PN SI LI CON T RAN SI ST OR ̈ DESCRI PT I ON The UTC 2SC2688 is designed for use in Color TV chroma output circuits. ̈ FEAT U RES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF
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2SC2688
2SC2688
2300pF)
50MHz
-10mA)
2SC2688L-x-T60-K
2SC2688G-x-T60-K
2SC2688L-x-T6C-K
2SC2688G-x-T6C-K
O-126
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NPN Transistor VCEO 1000V
Abstract: 1000v, NPN NTE2310 transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A
Text: NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings:
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NTE2310
NTE2310
100mA,
NPN Transistor VCEO 1000V
1000v, NPN
transistor VCE 1000V
transistor VCEO 1000V
TO218 package
transistor 1000V 6A
high voltage fast switching npn 4A
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NPN Transistor VCEO 1000V
Abstract: NTE2327 250V transistor npn 2a transistor VCE 1000V
Text: NTE2327 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2327 is a silicon NPN transistor in a TO126 type package designed for use in converters, inverters, switching regulators, motor control systems and switching applications. Absolute Maximum Ratings:
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NTE2327
NTE2327
100mA,
NPN Transistor VCEO 1000V
250V transistor npn 2a
transistor VCE 1000V
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npn 1000V 15A
Abstract: NPN Transistor VCEO 1000V diode 1000V 10a MJW16010A transistor 1000V 6A transistor VCE 1000V transistor 1000V vbe 10v, vce 500v NPN Transistor transistor VCEO 1000V
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJW16010A DESCRIPTION •Low Collector Saturation Voltage ·Collector-Emitter Sustaining Voltage: VCEO SUS = 500V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high-voltage, high-speed,power switching in
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MJW16010A
npn 1000V 15A
NPN Transistor VCEO 1000V
diode 1000V 10a
MJW16010A
transistor 1000V 6A
transistor VCE 1000V
transistor 1000V
vbe 10v, vce 500v NPN Transistor
transistor VCEO 1000V
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2SC3060
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC3060 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Ultra-fast switching ·Wide area of safe operation ·High breakdown voltage APPLICATIONS ·Switching regulators ·Motor controls ·Ultrasonic oscillators
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2SC3060
2SC3060
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TIC125
Abstract: 2N6925A ic 921 transistor VCE 1000V 2N6678 2N6921A 2N6923A 2N6924A MJ16018 SFT6925A
Text: *— t t u ' - -— SFT5925A NPN HIGH VOLTAGE HIGH SPEED POUJER TRANSISTOR 60 AMPS, 1000V 5TYLE CASE TO —3 WI TH JEDEC .060 PINS ► ► ► ► ► R A X SSDI 14849 F I R E S T O N E BLVD. LA MIRADA, CA. 9 0 6 3 8 FAX 213 9 2 1 - 9 6 6 0
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SFT5925A
100KHz)
2N6678,
2N6921A,
2N6923A,
2N6924A,
2N6925A,
MJ16018
60AMPS
SFT6925A
TIC125
2N6925A
ic 921
transistor VCE 1000V
2N6678
2N6921A
2N6923A
2N6924A
MJ16018
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BUX47A
Abstract: BUX47 BUX47B BY205-400
Text: T E X A S I N S T R -COPTO} Ô3&1726 T e x a s b5 instr DE | 0 T b l 7 5 b 003t.b41 fc, D 62C 36641 <o p t o > B U X 4 7, B U X 4 7A , BU X47B N-P-N SILICON POW ER TRANSISTORS 3 3 ' S 3 REVISED OCTOBER 1 9 8 4 125 W at 2 5 ° C Case Temperature 9 A Continuous Collector Current
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003bb41
BUX47,
BUX47A,
BUX47B
BUX47
BUX47A
BY205-400
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BUX47A
Abstract: BUX47 BUX47B BY205-400 silicon power transistors T35 ET
Text: TEXAS IN STR -COPTO} Ô 3Ô 1726 T EX A S TË IN S T R DE | 0 T b l 7 5 b 003t.b41 62C 3 6 6 4 1 <OPTO> BUX47, BUX47A, BUX47B N-P-N SILICON POWER TRANSISTORS 3 3 ' S 3 R E V IS E D O C TO B E R 1 9 8 4 125 W at 2 5 °C Case Temperature 9 A Continuous Collector Current
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tbl75b
BUX47,
BUX47A,
BUX47B
bux47a
1ux47b
BUX47
t-35-/s
BUX47A
BY205-400
silicon power transistors
T35 ET
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