2sc3090
Abstract: npn 10a 800v 10A Switching Regulator
Text: SavantIC Semiconductor Product Specification 2SC3090 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High breakdown voltage VCBO 800V ·Fast switching speed ·Wide ASO Safe Operating Area APPLICATIONS ·500V/10A Switching Regulator Applications
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2SC3090
00V/10A
2sc3090
npn 10a 800v
10A Switching Regulator
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2SC3090
Abstract: 2SC309 npn 10a 800v 10A Switching Regulator
Text: JMnic Product Specification 2SC3090 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage VCBO≥800V ・Fast switching speed ・Wide ASO(Safe Operating Area) APPLICATIONS ・500V/10A Switching Regulator Applications
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2SC3090
VCBO800V)
00V/10A
2SC3090
2SC309
npn 10a 800v
10A Switching Regulator
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npn 10a 800v
Abstract: 2SC3090
Text: Inchange Semiconductor Product Specification 2SC3090 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage VCBO≥800V ・Fast switching speed ・Wide ASO(Safe Operating Area) APPLICATIONS ・500V/10A Switching Regulator Applications
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2SC3090
VCBO800V)
00V/10A
npn 10a 800v
2SC3090
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2SC3090
Abstract: ITR05351 ITR05352 ITR05353 ITR05354 ITR05355
Text: Ordering number:EN1013C NPN Triple Diffused Planar Silicon Transistor 2SC3090 500V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3090] 15.6
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EN1013C
2SC3090
00V/10A
VCBO800V)
2SC3090]
2SC3090
ITR05351
ITR05352
ITR05353
ITR05354
ITR05355
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN1013C NPN Triple Diffused Planar Silicon Transistor 2SC3090 500V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3090] 15.6
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ENN1013C
2SC3090
00V/10A
VCBO800V)
2SC3090]
PW300
cycle10%
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EN1013C
Abstract: 2SC3090
Text: Ordering number:EN1013C NPN Triple Diffused Planar Silicon Transistor 2SC3090 500V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · Fast switching speed. · Wide ASO. unit:mm 2022 [2SC3090] E : Emitter
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EN1013C
2SC3090
00V/10A
VCBO800V)
2SC3090]
PW300
EN1013C
2SC3090
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BUX80
Abstract: npn 10a 800v 1N5802 npn transistors 400V low power
Text: BUX80 POWER TRANSISTORS 10A, 800V, Fast Switching, Silicon NPN Mesa FEATURES DESCRIPTION • • • • These high voltage triple diffused glass passivated power transistors combine fast switching, low saturation voltage and rugged E s/b capability. They are designed for use in
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BUX80
500nS
250iiS;
50//S;
BUX80
npn 10a 800v
1N5802
npn transistors 400V low power
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T10H 250V
Abstract: 2N5877 equivalent tektronix 475 2N6406 2N6408 2N5877 npn 10a 800v 2N5875 BUX82 IN4933
Text: BUX82 POWER TRANSISTORS 6A, 800V, Fast Switching, Silicon NPN Mesa FEATURES DESCRIPTION • Collector-Base Voltage: up to 800V • Peak Collector Current: 10A • On Time: < 500nS @ 2.5A These high voltage glass passivated power tra n sisto rs c o m b in e fa s t sw itching, low
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BUX82
500nS
180/tH
500kHz
1N5820
T10H 250V
2N5877 equivalent
tektronix 475
2N6406
2N6408
2N5877
npn 10a 800v
2N5875
BUX82
IN4933
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222A Transistor
Abstract: 222A 22a ic npn 10a 800v BU4530AW transistor 800V 1A NPN Transistor 1500V
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU4530AW DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color
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BU4530AW
100mA;
222A Transistor
222A
22a ic
npn 10a 800v
BU4530AW
transistor 800V 1A
NPN Transistor 1500V
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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Untitled
Abstract: No abstract text available
Text: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications
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KSC5302DM
O-126
KSC5302DMTU
KSC5302DMSTU
KSC5302DM
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Diode GP 514
Abstract: pnp 500v KA9282B DARLINGTON 1A 60V npn to92 2N3904TA DARLINGTON 3A 100V npn to92 8A SOT23 SOT23 NPN KA9220B diode 60V 8A
Text: PRODUCT GUIDE PART NO. 2N3904TA/3904 2N3906/3906AT 2N4400/4401 2N4402/4403 2N6515 2N6517 2N652Q KSP05/06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP55 KSP92 KST06TF KST10TF KST14TF KST2222ATF KST2907ATF KST3904TF KST3906TF KST42TF KST4401TF KST4403TF
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2N3904TA/3904
2N3906/3906AT
2N4400/4401
2N4402/4403
2N6515
2N6517
2N652Q
KSP05/06
KSP10
KSP13
Diode GP 514
pnp 500v
KA9282B
DARLINGTON 1A 60V npn to92
2N3904TA
DARLINGTON 3A 100V npn to92
8A SOT23
SOT23 NPN
KA9220B
diode 60V 8A
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KSC5302D
Abstract: No abstract text available
Text: KSC5302D KSC5302D High Voltage High Speed Power Switch Application • • • • High Breakdown Voltage : BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time
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KSC5302D
O-220
KSC5302DTU
KSC5302D
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npn 10a 800v
Abstract: 2SC3949 2SC394 npn vce 850 transistors
Text: JMnic Product Specification 2SC3949 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage ,high speed APPLICATIONS ・For TV horizontal output and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter
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2SC3949
npn 10a 800v
2SC3949
2SC394
npn vce 850 transistors
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2SC3993
Abstract: No abstract text available
Text: Ordering number:EN2236D NPN Triple Diffused Planar Silicon Transistor 2SC3993 800V/16A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process.
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EN2236D
2SC3993
00V/16A
2048B
2SC3993]
2SC3993
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npn 10a 800v
Abstract: 2SC3949
Text: Inchange Semiconductor Product Specification 2SC3949 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage ,high speed APPLICATIONS ・For TV horizontal output and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector
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2SC3949
npn 10a 800v
2SC3949
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NTE386
Abstract: npn 10a 800v
Text: NTE386 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE386 is a silicon NPN power transistor in a TO3 type package designed for high voltage, high– speed power switching in inductive circuit where fall time is critical. This device is particularly suited
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NTE386
NTE386
300ms,
npn 10a 800v
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LB-008
Abstract: lc08a LB 125 transistor Triple Diffused
Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION • • • • • Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time
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KSC5338D/KSC5338DW
O-220
LB-008
lc08a
LB 125 transistor
Triple Diffused
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Untitled
Abstract: No abstract text available
Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION * * * * * TO-220 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time
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KSC5338D/KSC5338DW
O-220
T0-220
C35siÃ
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PDF
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triacs bt 804 600v
Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa tion for maintaining an unusually high level of quality, perfor
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Comp27-1296
triacs bt 804 600v
UR720
1N4465
AO110
diode 1N539
2N3750
Unitrode discrete databook
2N6138
CM104
unitrode 679 BRIDGE rectifier
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NTE2584
Abstract: npn 10a 800v
Text: NTE2584 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide ASO Range Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
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NTE2584
NTE2584
npn 10a 800v
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NB 20 transistor
Abstract: 250V transistor npn 2a 300V transistor npn 2a npn 10a 800v KSC5338D
Text: KSC5338D NPN SILICON TRANSISTOR TO-220 z z z z HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION Wide S.O.A. Built-in Free-wheel Diode Suitable for ballast App;ication Low Variable Storage-time spread ABSOLUTE MIXIMUM RATING Characteristic Collector Base Voltage
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KSC5338D
O-220
NB 20 transistor
250V transistor npn 2a
300V transistor npn 2a
npn 10a 800v
KSC5338D
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RVEFB340150
Abstract: No abstract text available
Text: Motor Controllers Variable Frequency AC Drives Type VariFlex2 RVEF • AC variable speed drive for use with AC induction motors • Sensorless vector control or V/F mode, high starting torque • Input voltage ranges: 1-ph 110VAC, 1- ph 230VAC, 3-ph 230VAC, 3-ph 480VAC
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110VAC,
230VAC,
480VAC
RS232
RS485
FB120220
RVEFB120150F*
RVEFB120220F*
RVEFB320150
RVEFB340150
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