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    NPN 20A Search Results

    NPN 20A Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy

    NPN 20A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN Transistor 1500V

    Abstract: transistor tl 187 187 npn transistor NPN Transistor 1500V 20a NTE238
    Text: NTE238 Silicon NPN Transistor Color TV, Horizontal Output Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: D VCEX = 1500V D Safe Operating Area @ 50µs = 20A, 400V


    Original     		PDF NTE238 NTE238 Cont00V, NPN Transistor 1500V transistor tl 187 187 npn transistor NPN Transistor 1500V 20a

    BUV50

    Abstract: No abstract text available
    Text: BUV50 HIGH POWER NPN SILICON TRANSISTOR • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERISED AT 125oC APPLICATION SWITCHING REGULATORS ■ MOTOR CONTROL ■ DESCRIPTION The BUV50 is a Multiepitaxial planar NPN


    Original     		PDF BUV50 125oC BUV50

    BUV50

    Abstract: BUV50 AT MICROELECTRONICS HIGH POWER NPN SILICON TRANSISTOR
    Text: BUV50 HIGH POWER NPN SILICON TRANSISTOR • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERISED AT 125oC APPLICATION SWITCHING REGULATORS ■ MOTOR CONTROL ■ DESCRIPTION The BUV50 is a Multiepitaxial planar NPN


    Original     		PDF BUV50 125oC BUV50 BUV50 AT MICROELECTRONICS HIGH POWER NPN SILICON TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20A B BUJ303A NPN power transistor Rev. 6 — 8 February 2012 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT78 TO-220AB plastic package. 1.2 Features and benefits


    Original     		PDF BUJ303A O-220AB)

    curve tracer specifications

    Abstract: No abstract text available
    Text: TO -2 20A B BUJ303A NPN power transistor Rev. 6 — 8 February 2012 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT78 TO-220AB plastic package. 1.2 Features and benefits


    Original     		PDF BUJ303A O-220AB) curve tracer specifications

    NTE251

    Abstract: Darlington 40A
    Text: NTE251 NPN & NTE252 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications.


    Original     		PDF NTE251 NTE252 NTE251) NTE252) NTE251 Darlington 40A

    NPN Transistor VCEO 1000V

    Abstract: 1000v, NPN NTE2310 transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A
    Text: NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings:


    Original     		PDF NTE2310 NTE2310 100mA, NPN Transistor VCEO 1000V 1000v, NPN transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A

    BUW48

    Abstract: BUW49 80V 1A NPN Transistor
    Text: BUW48 BUW49 HIGH POWER NPN SILICON TRANSISTORS • ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VERY LOW SATURATION VOLTAGE AND HIGH GAIN 3 APPLICATION SWITCHING REGULATORS ■ MOTOR CONTROL


    Original     		PDF BUW48 BUW49 BUW48 BUW49 O-218 O-218 80V 1A NPN Transistor

    TO63 package

    Abstract: NTE71
    Text: NTE71 Silicon NPN Transistor High Current Amp, Fast Switch Description: The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that provides surface stabilization for high voltage operation and enhances long term reliability.


    Original     		PDF NTE71 NTE71 TO63 package

    BU208A equivalent

    Abstract: BD237 similar IC 3843 8 Pin BU108 BU208 2N4347 BD-31 2n3055 motorola bdx54c equivalent MJ13330
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ13333  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERE NPN SILICON POWER TRANSISTORS 400–500 VOLTS 175 WATTS The MJ13333 transistor is designed for high voltage, high–speed, power switching


    Original     		PDF MJ13333 MJ13333 AMP32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU208A equivalent BD237 similar IC 3843 8 Pin BU108 BU208 2N4347 BD-31 2n3055 motorola bdx54c equivalent MJ13330

    BUW48

    Abstract: BUW49
    Text: BUW48 BUW49 HIGH POWER NPN SILICON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VERY LOW SATURATION VOLTAGE AND HIGH GAIN • ■ ■ ■ ■ 3 APPLICATION SWITCHING REGULATORS ■ MOTOR CONTROL


    Original     		PDF BUW48 BUW49 BUW48 BUW49 O-218 O-218

    BUW48

    Abstract: BUW49
    Text: BUW48 BUW49 HIGH POWER NPN SILICON TRANSISTORS • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VERY LOW SATURATION VOLTAGE AND HIGH GAIN APPLICATION ■ SWITCHING REGULATORS ■ MOTOR CONTROL


    Original     		PDF BUW48 BUW49 O-218 BUW48 BUW49 O-218

    darlington NPN 600V 12a transistor

    Abstract: darlington NPN 600V 20a transistor NPN 600V transistor NPN 600V transistor darlington application MJ10023 NPN Transistor 600V MJ10023 NPN POWER DARLINGTON darlington NPN 600V
    Text: DATA SHEET MJ10023 NPN SILICON POWER DARLINGTON TRANSISTOR JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJ10023 is a Silicon NPN Power Darlington Transistor, mounted in a hermetically sealed metal case, designed for high voltage, high speed, power applications.


    Original     		PDF MJ10023 MJ10023 darlington NPN 600V 12a transistor darlington NPN 600V 20a transistor NPN 600V transistor NPN 600V transistor darlington application MJ10023 NPN Transistor 600V NPN POWER DARLINGTON darlington NPN 600V

    NTE478

    Abstract: No abstract text available
    Text: NTE478 Silicon NPN Transistor RF Power Output, PO = 100W @ 175MHz Description: The NTE478 is a 12.5 Volt epitaxial silicon NPN planar transistor designed primarily for VHF communications. This device utilizes diffused emitter resistors to achieve infinite VSWR under operating


    Original     		PDF NTE478 175MHz NTE478

    2N3772

    Abstract: 2N3772G
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N3772 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS „ DESCRIPTION The UTC 2N3772 is a silicon power transistor in TO-3 metal case. It is designed for linear amplifiers, series pass regulators, and inductive switching applications.


    Original     		PDF 2N3772 2N3772 2N3772L-T30-Y 2N3772G-T30-Y QW-R205-002 2N3772G

    NTE2311

    Abstract: npn 1000V 15A NPN Transistor VCEO 1000V
    Text: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V


    Original     		PDF NTE2311 NTE2311 npn 1000V 15A NPN Transistor VCEO 1000V

    2S322

    Abstract: No abstract text available
    Text: 2S322 Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.


    Original     		PDF 2S322 O205AA) 20-Aug-02 2S322

    CV7440L

    Abstract: No abstract text available
    Text: CV7440L Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.


    Original     		PDF CV7440L O205AA) 20-Aug-02 CV7440L

    B904

    Abstract: D1213 2SB904 D152 2SD121
    Text: Ordering number ¡EN1022A 2SB 904/2SD 1213 PNP/NPN Epitaxial Planar Silicon Transistors 30V/20A High-Speed Switching Applications Use • Large current switching of relay drivers, high-speed inverters, converters Features • Low collector-to-emitter saturation voltage: VcE sat =~0-5V{PNP), 0.4(NPN) max.


    OCR Scan     		PDF eN1022A 2SB904/2SD1213 0V/20A 2SB904 B904 D1213 2SB904 D152 2SD121

    BUW48

    Abstract: Asg TRANSISTOR
    Text: T SCS-THOMSON BUW48 ^ 7 # Meiamiigra@BtiiB8_ BUW49 HIGH POWER NPN SILICON TRANSISTORS . . . . . SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VER Y LOW SATURATION VOLTAGE AND HIGH GAIN APPLICATION


    OCR Scan     		PDF BUW48 BUW49 BUW48 BUW49 O-218 Asg TRANSISTOR

    2N5038

    Abstract: 2N5039 2N6039 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND
    Text: NPN SILICON POWER TRANSISTORS NPN 2N5038 2N5039 . fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial and commercial applications. FEATURES:


    OCR Scan     		PDF 2N5038 2N5039 2N5039 2N6039 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND

    BUX98P

    Abstract: No abstract text available
    Text: /= 7 SCS-THOMSON ^7# iüaoeœiiLieTîB i«e8 BUX98P HIGH VOLTAGE^FAST-SWITCHING NPN POWER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS . SWITCH MODE POWER SUPPLIES


    OCR Scan     		PDF BUX98P BUX98P O-218 100mA

    C 828 Transistor

    Abstract: marking code 20A iC 828 Transistor LB1200
    Text: Central CZT5338 Semiconductor Corp. NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5338 type is an NPN silicon power transistor manufac­ tured by the epitaxial planar process, epoxy mold­ ed in a surface mount package, designed for


    OCR Scan     		PDF CZT5338 OT-223 CP219 26-September OT-223 C 828 Transistor marking code 20A iC 828 Transistor LB1200

    BUV50

    Abstract: No abstract text available
    Text: SGS-THOMSON BUV50 im HIGH POWER NPN SILICON TRANSISTOR . . • . ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERISED AT 125°C APPLICATIO N . SWITCHING REGULATORS ■ MOTOR COISTTROL D ESCRIP TIO N


    OCR Scan     		PDF BUV50 BUV50