NPN 250W Search Results

NPN 250W Result Highlights (5)

Part	Manufacturer	Description
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)

NPN 250W Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NTE335 Abstract: J341 NPN 250W NTE336 n-p-n r.f. power transistors J201 equivalent Text: NTE335 & NTE336 Silicon NPN Transistor RF Power Output Description: The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:	Original	NTE335 NTE336 NTE335 NTE336 30MHz. 30MHz 1817pF 777pF J341 NPN 250W n-p-n r.f. power transistors J201 equivalent	PDF
NTE352 Abstract: w65 transistor RF POWER TRANSISTOR NPN Text: NTE352 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment	Original	NTE352 NTE352 175MHz. 175MHz 175MHz 175MHz, w65 transistor RF POWER TRANSISTOR NPN	PDF
transistor f421 Abstract: SGSF421 Text: SGSF321IF321 SGSF421/IF421 SGS-T110MS0N FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS • HIGH S W ITC H IN G SPEED NPN POWERTRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLICA TIONS ■ 70kHz SWITCHING SPEED • LOW COST DRIVE CIRCUITS	OCR Scan	SGSF321IF321 SGSF421/IF421 SGS-T110MS0N 70kHz O-220 ATT220 140Wto 500ms transistor f421 SGSF421	PDF
to63 Abstract: NTE70 180v 250w Text: NTE70 Silicon NPN Transistor High Voltage Power Amp, Switch Description: The NTE70 is a silicon NPN transistor in a TO63 type case utilizing C2R processing which describes a manufacturing technology that provides surface stabilization for high voltage operation and enhances long term reliability.	Original	NTE70 NTE70 to63 180v 250w	PDF
BUF405 Abstract: BUF405A 400V 5A NPN 100W Text: BUF405 BUF405A SGS-THOMSON FASTSWiTCH EASY-TO-DRIVE ETD NPN TRANSISTORS PR ELIM IN A R Y DATA > HIGH SWITCHING SPEED NPN POWER TRANSISTORS * EASY TO DRIVE • HIGH VOLTAGE FOR OFF-LINE APPLICA TIONS ■ 100KHZ SWITCHING SPEED ■ LOW COST DRIVE CIRCUITS	OCR Scan	BUF405 BUF405A 100KHZ 100KHz BUF405/405A --SC-B355 400V 5A NPN 100W	PDF
NPN Transistor 50A 400V Abstract: NTE99 NPN 400V 40A npn darlington 400v 15a Text: NTE99 Silicon NPN Transistor Darlington w/Base–Emitter Speed–up Diode Description: The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. This device is particularly	Original	NTE99 NTE99 NPN Transistor 50A 400V NPN 400V 40A npn darlington 400v 15a	PDF
250w npn Abstract: NPN 250W NTE60 NTE61 NTE61MCP Text: NTE60 NPN & NTE61 (PNP) Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications.	Original	NTE60 NTE61 500mA 500mA, 250w npn NPN 250W NTE60 NTE61 NTE61MCP	PDF
NTE388 Abstract: NPN 250W NTE68 NTE68MCP Text: NTE388 NPN & NTE68 (PNP) Silicon Complementary Transistors General Purpose High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE388 (NPN) and NTE68 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications.	Original	NTE388 NTE68 NTE388 NPN 250W NTE68 NTE68MCP	PDF
Untitled Abstract: No abstract text available Text: *57 BUF405 BUF405A SCS-THOMSON i u FASTSWITCH EASY-TO-DRIVE ETD NPN TRANSISTORS P R ELIM IN A R Y DATA • HIGH SWITCHING SPEED NPN POWER TRANSISTORS ■ EASY TO DRIVE ■ HIGH VOLTAGE FOR OFF-LINE APPLICA TIONS ■ 100KHZ SWITCHING SPEED ■ LOW COST DRIVE CIRCUITS	OCR Scan	BUF405 BUF405A 100KHZ 100KHz F105A	PDF
BU808DFH Abstract: ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH Text: Power Bipolar Transistors Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions P/N NPN PNP STX112 STBV68 STBV45 STBV42 STBV32 STX13003 100 400 400 400 400 400 P/N NPN PNP BSS44 BFX34 2N5153 2N5681 2N5682 2N5415 BUY49S 2N3440 2N5416	Original	STX112 STBV68 STBV45 STBV42 STBV32 STX13003 BSS44 BFX34 2N5153 2N5681 BU808DFH ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH	PDF
NPN Transistor 1A 400V Abstract: 405a BUF405 BUF405A 02JJ Text: 7^5^537 00555^5 b • T~-3>3~1^ BUF405 BUF405A SGS-THOMSON ¡[L iC T l iD i S Q S-THOMSON 30 E ]> FASTSWITCH EASY-TO-DRIVE ETD NPN TRANSISTORS P R EL IM IN A R Y DATA ■ HIGH SWITCHING SPEED NPN POWER TRANSISTORS ■ EASY TO DRIVE ■ HIGH VOLTAGE FOR OFF-LINE APPLICA	OCR Scan	-33-l? BUF405 BUF405A 100KHZ 100KHz BUF405/405A NPN Transistor 1A 400V 405a BUF405 BUF405A 02JJ	PDF
transistor f423 Abstract: sgsf323 Text: 7qgqg37 o o s g is q ^ T * 3 M S SGSF323/IF323 SGSF423/IF423 S G S -T H O M S O N !D=D S G S-THOMSON 30E P FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS • HIG H S W ITC H IN G SPEED NPN POWER TRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY ■ FOR FAST SWITCHING ■ HIGH VOLTAGE FOR OFF-LINE APPLICA	OCR Scan	7qgqg37 SGSF323/IF323 SGSF423/IF423 70kHz 500ms transistor f423 sgsf323	PDF
SGSF32 Abstract: transistor f421 F421 Transistor Text: 7 T 2 T B 3 7 o o a ' î i s a i m SGSF321/IF321 SGSF421/IF421 SGS-THOMSON [i$ 0 g ^ ( 5 i[ L [ i( g T O ( M ( g S S G S-THOMSON 3GE » FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS • HIG H SW IT C H IN G SPEED NPN PO W ER TRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY	OCR Scan	SGSF321/IF321 SGSF421/IF421 70kHz 500ms SGSF32 transistor f421 F421 Transistor	PDF
NPN 250W Abstract: 250w npn MRF448 transistor 250W Text: MRF448 The RF Line NPN Silicon Power Transistor 250W, 30MHz, 50V M/A-COM Products Released - Rev. 07.07 Designed primarily for high–voltage applications as a high–power linear amplifiers from 2.0 to 30 MHz. Ideal for marine and base station equipment.	Original	MRF448 30MHz, NPN 250W 250w npn MRF448 transistor 250W	PDF

NPN VCEO 800V Abstract: NTE2533 Text: NTE2533 Silicon NPN Transistor High–Definition Color Display Horizontal Deflection Output Features: D High Speed: tf = 100ns Typ D High Breakdown Voltage: VCBO = 1500V D High Reliability Absolute Maximum Ratings: TA = +25°C unless otherwise specified	Original	NTE2533 100ns 100mA, NPN VCEO 800V NTE2533	PDF
NTE387MP Abstract: NTE387 Text: NTE387 Silicon NPN Transistor Power Amp, Switch Features: D High Collector–Emitter Sustaining Voltage D High DC Current Gain D Low Collector–Emitter Saturation Voltage D Fast Switching Times Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V	Original	NTE387 NTE387MP NTE387	PDF
IC 5369 Abstract: BUV18 to-204ae NPN 160v 250W transistors TO-204AE Package BUV19 Text: BUV18 BUV19 MECHANICAL DATA Dimensions in mm NPN HIGH CURENT SWITCHING TRANSISTORS Designed for high energy applications 25.15 0.99 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) requiring robust fast switching devices 1.52 (0.06) 3.43 (0.135)	Original	BUV18 BUV19 O-204AE) IC 5369 BUV18 to-204ae NPN 160v 250W transistors TO-204AE Package BUV19	PDF
BUV18 Abstract: No abstract text available Text: BUV18 BUV19 MECHANICAL DATA Dimensions in mm NPN HIGH CURENT SWITCHING TRANSISTORS Designed for high energy applications 25.15 0.99 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) requiring robust fast switching devices 1.52 (0.06) 3.43 (0.135)	Original	BUV18 BUV19 O-204AE) BUV18	PDF
Untitled Abstract: No abstract text available Text: BUV18 BUV19 MECHANICAL DATA Dimensions in mm NPN HIGH CURENT SWITCHING TRANSISTORS Designed for high energy applications 25.15 0.99 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) requiring robust fast switching devices 1.52 (0.06) 3.43 (0.135)	Original	BUV18 BUV19 O-204AE)	PDF
induction cooker schematic diagram Abstract: schematic diagram induction heating schematic diagram induction cooker diagram induction cooker schematic induction heating induction cooker circuit diagram induction cooker schematic induction heating schematic induction cooker Darlington NPN 250W Text: NTE2558 Silicon NPN Transistor Darlington, High Voltage, High Speed Switch w/ Damper Diode TO3PBL Type Package Features: D High Reliability D High Collector−Base Breakdown Voltage D On−Chip Damper Diode Applications: D High−Voltage, High−Power Switching	Original	NTE2558 100mA induction cooker schematic diagram schematic diagram induction heating schematic diagram induction cooker diagram induction cooker schematic induction heating induction cooker circuit diagram induction cooker schematic induction heating schematic induction cooker Darlington NPN 250W	PDF
induction cooker schematic diagram Abstract: schematic diagram induction cooker diagram induction cooker induction cooker schematic induction cooker DARLINGTON 5A 1500V Darlington NPN 250W induction heating schematic NTE2558 schematic diagram induction heating Text: NTE2558 Silicon NPN Transistor Darlington, High Voltage, High Speed Switch w/ Damper Diode Features: D High Reliability D High Collector–Base Breakdown Voltage D On–Chip Damper Diode Applications: D High–Voltage, High–Power Switching D Induction Cookers	Original	NTE2558 100mA induction cooker schematic diagram schematic diagram induction cooker diagram induction cooker induction cooker schematic induction cooker DARLINGTON 5A 1500V Darlington NPN 250W induction heating schematic NTE2558 schematic diagram induction heating	PDF
NPN VCEO 800V Abstract: NTE2533 NPN Transistor 1500V 20a Text: NTE2533 Silicon NPN Transistor High−Definition Color Display Horizontal Deflection Output TO3PBL Type Package Features: D High Speed: tf = 100ns Typ D High Breakdown Voltage: VCBO = 1500V D High Reliability Absolute Maximum Ratings: TA = +25°C unless otherwise specified	Original	NTE2533 100ns 100mA, NPN VCEO 800V NTE2533 NPN Transistor 1500V 20a	PDF
BUV62 Abstract: LE17 Text: FAST SWITCHING NPN POWER TRANSISTOR BUV62 • Fast Switching Times • Low Switching Losses • Low Saturation Voltage • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • High Reliability Screening Options Available	Original	BUV62 O-204AE) BUV62 LE17	PDF
NPN Transistor 15A 400V to3 Abstract: BUV62A NPN 400V 40A NPN 250W LE17 transistor IC 12A 400v Text: FAST SWITCHING NPN POWER TRANSISTOR BUV62A • Fast Switching Times • Low Switching Losses • Low Saturation Voltage • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • High Reliability Screening Options Available	Original	BUV62A O-204AE) NPN Transistor 15A 400V to3 BUV62A NPN 400V 40A NPN 250W LE17 transistor IC 12A 400v	PDF

NPN 250W Search Results

NPN 250W Result Highlights (5)

NPN 250W Datasheets Context Search

NTE335

NTE352

transistor f421

to63

BUF405

NPN Transistor 50A 400V

250w npn

NTE388

Untitled

BU808DFH

NPN Transistor 1A 400V

transistor f423

SGSF32

NPN 250W

NPN VCEO 800V

NTE387MP

IC 5369

BUV18

Untitled

induction cooker schematic diagram

induction cooker schematic diagram

NPN VCEO 800V

BUV62

NPN Transistor 15A 400V to3