2SD612
Abstract: 2SD612K
Text: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD612 2SD612K DESCRIPTION •With TO-126 package ·Complement to type 2SB632/632K ·High collector dissipation ·Wide area of safe operation APPLICATIONS ·25V/35V, 2A low-frequency power
|
Original
|
PDF
|
2SD612
2SD612K
O-126
2SB632/632K
5V/35V,
2SD612
500mA
2SD612K
|
2SD612
Abstract: 2SD612K
Text: Inchange Semiconductor Product Specification 2SD612 2SD612K Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SB632/632K ·High collector dissipation ·Wide area of safe operation APPLICATIONS ·25V/35V, 2A low-frequency power
|
Original
|
PDF
|
2SD612
2SD612K
O-126
2SB632/632K
5V/35V,
2SD612
500mA
2SD612K
|
TSB772
Abstract: BVceo-50V TSD882 TSD882CK
Text: TSD882 Low Vce sat NPN Transistor TO-126 Pin assignment: BVCEO = 50V Ic = 3A VCE (SAT), = 0.25V(typ.) @Ic / Ib = 2A / 0.2A TO-126 1. Emitter 2. Collector 3. Base Features Ordering Information Low VCE (SAT). Part No. Excellent DC current gain characteristics
|
Original
|
PDF
|
TSD882
O-126
TSD882CK
TSB772
100MHz
380uS,
TSB772
BVceo-50V
TSD882
TSD882CK
|
TRANSISTOR 434
Abstract: NPN 2A TO 126
Text: TSD882 Low Vcesat NPN Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 50V BVCEO 50V IC 3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSB772
|
Original
|
PDF
|
TSD882
O-126
200mA
TSB772
TSD882CK
O-126
250pcs
TRANSISTOR 434
NPN 2A TO 126
|
NPN Transistor 450v 1A To-92
Abstract: No abstract text available
Text: TS13003A High Voltage NPN Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 450V BVCBO 700V IC VCE SAT Features 2A 0.5V @ IC=1A, IB=0.25A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type
|
Original
|
PDF
|
TS13003A
O-126
TS13003ACK
NPN Transistor 450v 1A To-92
|
Untitled
Abstract: No abstract text available
Text: TS13003A High Voltage NPN Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 450V BVCBO 700V IC VCE SAT Features 2A 0.5V @ IC=1A, IB=0.25A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type
|
Original
|
PDF
|
TS13003A
O-126
TS13003ACK
50pcs
|
Untitled
Abstract: No abstract text available
Text: TS13005CK High Voltage NPN Transistor TO-126 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 3A 0.17V @ IC=1A, IB=0.2A Block Diagram ● Low spread of dynamic parameters ● High switching speed ●
|
Original
|
PDF
|
TS13005CK
O-126
TS13005CK
50pcs
|
BD131
Abstract: BD132 2A 50V NPN
Text: SavantIC Semiconductor Product Specification BD131 Silicon NPN Power Transistors DESCRIPTION •Complement to type BD132 ·With TO-126 package ·High current Max: 3A ·Low voltage (Max: 45V) APPLICATIONS ·For general purpose power applications PINNING PIN
|
Original
|
PDF
|
BD131
BD132
O-126
100MHz
BD131
BD132
2A 50V NPN
|
bd131 equivalent
Abstract: BD131 EQUIVALENT IC bd131 BD132
Text: Inchange Semiconductor Product Specification BD131 Silicon NPN Power Transistors • DESCRIPTION ·Complement to type BD132 ·With TO-126 package ·High current Max: 3A ·Low voltage (Max: 45V) APPLICATIONS ·For general purpose power applications PINNING
|
Original
|
PDF
|
BD131
BD132
O-126
100MHz
bd131 equivalent
BD131 EQUIVALENT IC
bd131
BD132
|
BD681
Abstract: BD675A 679a BD679A BD677A HFE BD681 677a
Text: SavantIC Semiconductor Product Specification BD675A/677A/679A/681 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD676A/678A/680A/682 ·DARLINGTON APPLICATIONS ·For medium power linear and switching applications PINNING
|
Original
|
PDF
|
BD675A/677A/679A/681
O-126
BD676A/678A/680A/682
BD675A
BD677A
BD679A
BD681
BD681
BD675A
679a
BD679A
BD677A
HFE BD681
677a
|
BD437
Abstract: BD433 ic 437 BD434 BD435 437 ic
Text: SavantIC Semiconductor Product Specification BD433/435/437 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD434/436/438 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter
|
Original
|
PDF
|
BD433/435/437
O-126
BD434/436/438
BD433
BD435
BD437
BD437
BD433
ic 437
BD434
BD435
437 ic
|
2SD1691
Abstract: 2SD1691L 2SB1151 TO-220F1 NPN
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 TO-220F1 1 TO-126 1 TO-126C ORDERING INFORMATION Ordering Number Lead Free Plating
|
Original
|
PDF
|
2SD1691
O-220
2SB1151
O-220F1
O-126
O-126C
2SD1691L-x-T60-K
2SD1691G-x-T60-K
2SD1691L-x-T6C-K
2SD1691G-x-T6C-K
2SD1691
2SD1691L
2SB1151
TO-220F1 NPN
|
BD441
Abstract: BD439 BD440 BD442
Text: SavantIC Semiconductor Product Specification BD439 BD441 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD440,BD442 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2
|
Original
|
PDF
|
BD439
BD441
O-126
BD440
BD442
BD439
BD441
BD442
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 1 1 TO-220F1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 1 TO-126 TO-126C 1 ORDERING INFORMATION Ordering Number Lead Free Plating
|
Original
|
PDF
|
2SD1691
O-220F1
O-220
2SB1151
O-126
O-126C
2SD1691L-x-TA3-T
2SD1691G-x-TA3-T
2SD1691L-x-TF1-T
2SD1691G-x-TF1-T
|
|
|
ic 803
Abstract: mje800 mje802
Text: SavantIC Semiconductor Product Specification MJE800/801/802/803 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type MJE700/701/702/703 ·High DC current gain ·DARLINGTON APPLICATIONS ·Designed for general–purpose amplifier
|
Original
|
PDF
|
MJE800/801/802/803
O-126
MJE700/701/702/703
MJE800/801
MJE802/803
MJE800/802
MJE801/803
ic 803
mje800
mje802
|
2N6039
Abstract: 2N6037 2N6038 2n6034
Text: SavantIC Semiconductor Product Specification 2N6037 2N6038 2N6039 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2N6034/6035/6036 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for general-purpose amplifier
|
Original
|
PDF
|
2N6037
2N6038
2N6039
O-126
2N6034/6035/6036
2N6037
2N6038
2N6039
2n6034
|
MJE800
Abstract: pc 801 ic 701 ic 803
Text: Inchange Semiconductor Product Specification MJE800/801/802/803 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type MJE700/701/702/703 ・High DC current gain ・DARLINGTON APPLICATIONS ・Designed for general–purpose amplifier
|
Original
|
PDF
|
MJE800/801/802/803
O-126
MJE700/701/702/703
MJE800/801
MJE802/803
MJE801/803
MJE800
pc 801
ic 701
ic 803
|
BD681
Abstract: BD679A BD677A 2a 100v NPN HFE BD681 npn 100v 1.5a BD675A 680A 679A BD677-A
Text: Inchange Semiconductor Product Specification BD675A/677A/679A/681 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD676A/678A/680A/682 ・DARLINGTON APPLICATIONS ・For medium power linear and switching applications
|
Original
|
PDF
|
BD675A/677A/679A/681
O-126
BD676A/678A/680A/682
BD675A
BD677A
BD679A
BD681
BD681
BD679A
BD677A
2a 100v NPN
HFE BD681
npn 100v 1.5a
BD675A
680A
679A
BD677-A
|
BD435
Abstract: ic 435 BD433 BD437
Text: Inchange Semiconductor Product Specification BD433/435/437 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD434/436/438 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1
|
Original
|
PDF
|
BD433/435/437
O-126
BD434/436/438
BD433
BD435
BD437
BD435
ic 435
BD433
BD437
|
K*D1691
Abstract: KSB1151 KSD1691
Text: KSD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT TO-126 • HIGH POWER DISSIPATION: PC = 1.3W TA=25°C • Complementary to KSB1151 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector- Base Voltage Collector-Emitter Voltage
|
Original
|
PDF
|
KSD1691
O-126
KSB1151
PW10ms,
Cycle50%
K*D1691
KSB1151
KSD1691
|
2N6039
Abstract: 2N6037 2N6038 2N603 2n6034
Text: Inchange Semiconductor Product Specification 2N6037 2N6038 2N6039 Silicon NPN Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type 2N6034/6035/6036 ・DARLINGTON ・High DC current gain APPLICATIONS ・Designed for general-purpose amplifier
|
Original
|
PDF
|
2N6037
2N6038
2N6039
O-126
2N6034/6035/6036
2N6037
2N6038
2N6039
2N603
2n6034
|
NPN 2A TO 126
Abstract: 2SC1847 2SA886
Text: SavantIC Semiconductor Product Specification 2SC1847 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA886 ·Low collector saturation APPLICATIONS ·For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter
|
Original
|
PDF
|
2SC1847
O-126
2SA886
200MHz
NPN 2A TO 126
2SC1847
2SA886
|
2SC1847
Abstract: 2SA886
Text: JMnic Product Specification 2SC1847 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA886 ・Low collector saturation APPLICATIONS ・For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to
|
Original
|
PDF
|
2SC1847
O-126
2SA886
200MHz
2SC1847
2SA886
|
cb 237
Abstract: BD235 bd233
Text: TO-126 Plastic-Encapsulate T ra n s is to rs ^ ^ BD233/235/237 TRANSISTOR NPN FEATU RES Pcm: 1.25 W (Tamb=25lC) Ic m : 2A V(BR)cbo : BD233 : 45V BD235 : 60V BD237: 100V ion temperature range T s tg : -65TC to + 1501c T j: 150°C ELECTRICAL CHARACTERISTICS
|
OCR Scan
|
PDF
|
O-126
BD233/235/237
BD233
BD235
BD237:
-65TC
1501c
BD233
B0235
BD237
cb 237
BD235
|
