NPN 331 Search Results

2N3904DCSM

Abstract: 2N2222ADCSM 2N3965
Contextual Info: 61 33167 0G00105 S 37E D SEMELAB LTD BS/CECC Polarity Package v CEO •c cont 50003-017 50003-017 50003-017 50003-017 NPN NPN NPN NPN NPN T077 Dual T03 T03 T03 T03 50 60 80 60 80 0.03 10 10 10 10 •150-600 25-90 25-90 50-150 50-150 NPN NPN NPN NPN NPN T039

123AP

Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
Contextual Info: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge

sfh 3310

Abstract: IEC 61760-1
Contextual Info: 2007-05-29 Silicon NPN Phototransistor with Vλ Characteristics NPN-Silizium-Fototransistor mit Vλ-Charakteristik Version 1.0 SFH 3310 Features: Besondere Merkmale: • Spectral range of sensitivity: 350 . 970 nm • Spektraler Bereich der Fotoempfindlichkeit:

Contextual Info: 2014-01-14 Silicon NPN Phototransistor with Vλ Characteristics NPN-Silizium-Fototransistor mit Vλ-Charakteristik Version 1.1 SFH 3310 Features: Besondere Merkmale: • Spectral range of sensitivity: typ 350 . 970 nm • Package: 3mm Radial (T 1), Epoxy

GH1-231QG

Abstract: GH1-231QH GH1-231QK GH1-231QX GH1-331QA GH1-331QB GH1-331QD GH1-331QE GH1-431QC GH1-431QF
Contextual Info: GH1 电感式接近开关 31 5 外形编号 检测距离 Sn[mm] NPN 常开 NPN 常闭 GH1-331QA GH1-331QB NPN 一开一闭 DC PNP 常开 备 型 PNP 常闭 PNP 一开一闭 型 二线制 常开 具 二线制 常闭 号 二线制 常开 AC 二线制 常闭

sfh 3310

Abstract: 560nm GEOY6446 OHLY0598 npn phototransistor 560nm
Contextual Info: NPN-Si-Fototransistor mit Vλ Charakteristik Silicon NPN Phototransistor with Vλ Characteristics Lead Pb Free Product - RoHS Compliant SFH 3310 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 970 nm • Angepasst an die Augenempfindlichkeit (Vλ)

GEOY6446

Abstract: OHLY0598 npn phototransistor 560nm
Contextual Info: NPN-Si-Fototransistor mit Vλ Charakteristik Silicon NPN Phototransistor with Vλ Characteristics Lead Pb Free Product - RoHS Compliant SFH 3310 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 970 nm • Angepasst an die Augenempfindlichkeit (Vλ)

Contextual Info: NPN-Si-Fototransistor mit Vλ Charakteristik Silicon NPN Phototransistor with Vλ Characteristics Lead Pb Free Product - RoHS Compliant SFH 3310 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 970 nm • Angepasst an die Augenempfindlichkeit (Vλ)

philips bfq

Abstract: BFQ263 BFQ263A RK 100
Contextual Info: Product specification Philips S em iconductors - r & 3 ~ DESCRIPTION > 5 BFQ263; BFQ263A NPN 1 GHz video transistors • 5bE D PHILIPS IN TE RNATIONAL c 711062t. 0045b4û 331 « P H I N PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with

Contextual Info: NPN-Si-Fototransistor mit Vλ Charakteristik Silicon NPN Phototransistor with Vλ Characteristics Lead Pb Free Product - RoHS Compliant SFH 3310 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 970 nm • Angepasst an die Augenempfindlichkeit (Vλ)

npn transistor dc 558

Abstract: BFQ22S transistor dc 558 npn BFQ24 Transistor 5331 BFQ22
Contextual Info: Philips Semiconductors • ^ 53*331 Q O B IS Ü T 4 4 e! M APX Product specification NPN 6 GHz wideband transistor " ■111,1 BFQ22S b'IE J> N AMER PHILIPS/DISCRETE DESCRIPTION PINNING NPN transistor in a TO-72 métal envelope with insulated electrodes and a shield lead connected to the

40411 transistor

Abstract: transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39
Contextual Info: 880 0 0 79 8 8 2 5 4 0 2 2 S IL IC O N TRANSISTOR CORP. NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued flö Polarity lc Max Amps 2N6465 2N6466 2N6468 2N6469 2N6470 NPN NPN PNP PNP NPN 4.0 4.0 4.0 15.0 15.0 110 130 130 50 50 TO-66 TO-66 TO-66

Contextual Info: Product specification Philips Semiconductors NPN general purpose transistor BC846W; BC847W; BC848W PIN CONFIGURATION FEATURES • S- mini package. n* n1 DESCRIPTION NPN transistor in a plastic SOT323 SC70 package. PINNING - SOT323 PIN Top view DESCRIPTION

Contextual Info: ri7 SGS-THOMSON ^ 7# usiieBsiiLEeraoiiies BUL67 HIGH VOLTAGE FAST-SWITCHING NPN POW ER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH RUGGEDNESS NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED

Contextual Info: 2N5004 Silicon NPN Transistor Data Sheet Description Applications • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5004J

2N5002

Abstract: 2N5002J 2N5002JV 2N5002JX 2N5003
Contextual Info: 2N5002 Silicon NPN Transistor Data Sheet Description Applications Complement to the 2N5003 • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E

2N5004

Abstract: 2N5004 JANTXV NPN/transistor C 331 switching transistor 331 2N5004J 2N5004JV 2N5005
Contextual Info: 2N5004 Silicon NPN Transistor Data Sheet Description Applications Complement to the 2N5005 • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E

2N5004

Contextual Info: 2N5004 Silicon NPN Transistor Data Sheet Description Applications Complement to the 2N5005 • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E

Contextual Info: @ OFTEK Product Bulletin OP593A June 1996 NPN Plastic Silicon Phototransistors Types OP593, OP598 Series Features • Wide receiving angle • Variety of sensitivity ranges • TO-18 equivalent package style Description The OP593/598 series consist of NPN

Contextual Info: 0 . OPTEK Product Bulletin OP593A June 1996 NPN Plastic Silicon Phototransistors Types OP593, OP598 Series Features • Wide receiving angle • Variety of sensitivity ranges • TO-18 equivalent package style Description The OP593/598 series consist of NPN

Contextual Info: BCX56-10R1 Preferred Device NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-89 package, which is designed for medium power surface mount applications.

Contextual Info: Central CMPTA29 Sem iconductor Corp. HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA29 is a Silicon NPN Darlington T ransistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring

2N2222A 331

Contextual Info: I lll iF t i mi 2N2222ACSM4 SEME LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN

Tfk 880

Abstract: TFK 804 TFK 802 S45C tfk bfx89 BFX89 tfk 332 ir tfk case BFX89
Contextual Info: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Allgem ein bis in den GHz-Bereich Applications: General, up to the GHz ränge Besondere Merkmale: Features: • Leistungsverstärkung 7 dB • Power gain 7 dB