F343
Abstract: NPN 350W SGS transistors if443 npn 1000V 100a 10101DC SGS-Thomson TO3 HEATSINK f443
Text: • S 3 -< 3 SGS-THOMSON ilL i D ir i^ K lD ( D i SGSF343/IF343 SGSF443/IF443/F543 S G S-THOMSON 3GE J> FASTS WITCH HOLLOW-EMITTER NPN TRANSISTORS ■ HIGH SWITCHING SPEED NPN POWER TRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR O FF-LINE APPLIC A
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SGSF343/IF343
SGSF443/IF443/F543
70kHz
500ms
F343
NPN 350W
SGS transistors
if443
npn 1000V 100a
10101DC
SGS-Thomson
TO3 HEATSINK
f443
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NPN 350W
Abstract: TACAN transistor 350w TACAN transistor MRF10350 MRF10
Text: MRF10350 Microwave Pulse Power Silicon NPN Transistor 350W peak , 1025–1150MHz M/A-COM Products Released - Rev. 07.07 Product Image Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed performance @ 1090 MHz
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MRF10350
1150MHz
NPN 350W
TACAN transistor 350w
TACAN transistor
MRF10350
MRF10
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NPN 350W
Abstract: J22 transistor SP1150
Text: MAPR-001090-350S00 Avionics Pulsed Power Transistor 350W, 1025-1150 MHz, 10µs Pulse, 1% Duty M/A-COM Products Released, 14 Sep 2007 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration
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MAPR-001090-350S00
NPN 350W
J22 transistor
SP1150
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Untitled
Abstract: No abstract text available
Text: MAPR-001090-350S00 Avionics Pulsed Power Transistor 350W, 1025-1150 MHz, 10µs Pulse, 1% Duty M/A-COM Products Released, 14 Sep 2007 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration
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MAPR-001090-350S00
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Untitled
Abstract: No abstract text available
Text: MAPRST0912-350 Avionics Pulsed Power Transistor 350W, 960-1215 MHz, 10µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation
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MAPRST0912-350
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PH1090-350L
Abstract: NPN 350W RF POWER TRANSISTOR NPN 350WF HIGH POWER NPN SILICON TRANSISTOR
Text: PH1090-350L Avionics Pulsed Power Transistor 350W, 1090 MHz, 250µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation
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PH1090-350L
PH1090-350L
NPN 350W
RF POWER TRANSISTOR NPN
350WF
HIGH POWER NPN SILICON TRANSISTOR
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40w electronic ballast
Abstract: MAPRST0912-350 diode gp 421 NPN 350W 072s
Text: MAPRST0912-350 Avionics Pulsed Power Transistor 350W, 960-1215 MHz, 10µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation
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MAPRST0912-350
40w electronic ballast
MAPRST0912-350
diode gp 421
NPN 350W
072s
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NPN 350W
Abstract: No abstract text available
Text: PH1090-350L Avionics Pulsed Power Transistor 350W, 1090 MHz, 250µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation
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PH1090-350L
NPN 350W
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PDF
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Untitled
Abstract: No abstract text available
Text: an A M P company Avionics Pulsed Power Transistor, 350W, 250ns Pulse, 10% Duty 1030 -1090 MHz PH1090-350L V2.00 Features • • • • • • • • NPN Silicon Microwave Pow er Transistor C om m on Base Configuration Broadband Class C O peration High Efficiency Interdigitated G eom etry
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250ns
PH1090-350L
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Untitled
Abstract: No abstract text available
Text: BIG IDEAS IN BIG POWER " • PowerTech 150 AMPERES PT-4500 HIGH VOLTAGE SILICON NPN TRANSISTOR FEATURES V C E s a t . 0.7 5 @ 1 0 0 A h p E . V ß E . 1.5 @
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PT-4500
300/Jsec
100/xA
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BUX20
Abstract: NPN 350W LE17
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX20 • High Current, Fast Switching. • Hermetic Metal TO3 Package. • Ideally suited for Motor Control and Power Switching Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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BUX20
O-204AE)
BUX20
NPN 350W
LE17
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Untitled
Abstract: No abstract text available
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX20 • High Current, Fast Switching. • Hermetic Metal TO3 Package. • Ideally suited for Motor Control and Power Switching Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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BUX20
O-204AE)
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CM631
Abstract: No abstract text available
Text: MG50N2CK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain
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MG50N2CK1
CM631
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PDF
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Untitled
Abstract: No abstract text available
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUR50 • High Pulse Power, Fast Switching. • Hermetic Metal TO3 Package. • Ideally suited for Motor Control and Power Switching Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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BUR50
O-204AE)
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TRANSISTOR C 5928
Abstract: PT8502 NPN 350W powertech 2N5928
Text: BIG IDEAS IN PowerTech BIG POWER ’’ • 150 AMPERES 2N5928 PT-85D2 SILICON NPN TRANSISTOR FEATURES: V C E s a t . 1.0 V @ 100 A i p E . V B E . 2.0 V @ 100 A t r .
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2N5928
PT-85D2
TRANSISTOR C 5928
PT8502
NPN 350W
powertech
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Untitled
Abstract: No abstract text available
Text: ^£.m.L-donaactoi Lproducti., Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUX25 NPN SILICON POWER TRANSISTOR 25.15(0.99] 26.67(1,05) 1067 (0.42) 11.18(0.44} 1,52(006) 343(0135) FEATURES
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BUX25
O-204AE
10MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: ^£mi-L.onauctoi L/-* 10 duets., line. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUX23 NPN MULTI - EPITAXIAL POWER TRANSISTOR 6.SSIU2S. 5.151036. 10.07 |0,«. 11.IS 10.44' 1.5210.06. 3.43I0.13S.
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BUX23
144IU
O204AA)
10MHz
300ns
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NPN 350W
Abstract: BUR52
Text: BUR52 MECHANICAL DATA Dimensions in mm inches HIGH CURRENT NPN SILICON TRANSISTOR 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) FEATURES 1 • HIGH PULSE POWER 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063)
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BUR52
O204AE)
NPN 350W
BUR52
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NPN 350W
Abstract: BUR52
Text: BUR52 MECHANICAL DATA Dimensions in mm inches HIGH CURRENT NPN SILICON TRANSISTOR 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) FEATURES 1 • HIGH PULSE POWER 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063)
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BUR52
O204AE)
NPN 350W
BUR52
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PDF
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Untitled
Abstract: No abstract text available
Text: BUR52 MECHANICAL DATA Dimensions in mm inches HIGH CURRENT NPN SILICON TRANSISTOR 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) FEATURES 1 • HIGH PULSE POWER 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063)
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BUR52
O204AE)
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transistor PT 4500
Abstract: No abstract text available
Text: 17 E D • TS'JÛTbM □□□□331 T POliJERTECH INC "BIG IDEAS IN BIG POWER” ■ PowerTecri 150AMPERES PT-4500 T-SVIS HIGH VOLTAGE SILICON NPN TRANSISTOR FEATURES V c E s a t . 0.75 @ 100 A hF E .
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PT-4500
300/Ltsec
100/iA
transistor PT 4500
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NPN 350W
Abstract: TO276AB TO276AA BUX53 NTC1330-12.8MHZ 8MHZ BUX41N
Text: Search Results Part number search for devices beginning "BUW75" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BUW75 NPN TO3 300V 12A 10 - 1.5/5 10MHz 120W
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BUW75"
BUW75
10MHz
BUX23"
BUX23
BUX23CECC
BUX23-JQR-B
BUX53"
BUX53
BUX53SMD
NPN 350W
TO276AB
TO276AA
NTC1330-12.8MHZ
8MHZ
BUX41N
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BUS11-JQR-B
Abstract: 400V 5A NPN 100W BUV19 PNP 8A 400V TO-3
Text: Search Results Part number search for devices beginning "BUS12" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BUS12 NPN TO3 400V 8A 15 - 5/1 - 125W BUS12A
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BUS12"
BUS12
BUS12A
BUS12ACECC
BUS12A-JQR-B
BUS12CECC
BUS12-JQR-B
BUS11"
BUW49"
BUW49
BUS11-JQR-B
400V 5A NPN 100W
BUV19
PNP 8A 400V TO-3
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NPN 350W
Abstract: powertech NPN Transistor VCEO 1000V CO111
Text: "BIG IDEAS IN BIG POWER” PowerTech • 500 AMPERES L R -1 0 0 2 SILICON NPN TRANSISTOR ABSOLUTE MAXIMUM RATINGS LR-10Q2 SYMBOL Collector-Base Voltage VC 80 100V Collector-Emitter Voltage VCEO 80V Emitter-Base Voltage vebo 10V Peak Collector Current >CM*
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LR-10Q2
-650C
LPH-150
SYMBOL500
200ma
NPN 350W
powertech
NPN Transistor VCEO 1000V
CO111
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