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    NPN 500 VOLTS 15 AMPERE 100 WATTS NPN SILICON PO Search Results

    NPN 500 VOLTS 15 AMPERE 100 WATTS NPN SILICON PO Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation

    NPN 500 VOLTS 15 AMPERE 100 WATTS NPN SILICON PO Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tip122 tip127 audio amp schematic

    Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
    Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.


    Original     		PDF DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier

    transistor MJL21194

    Abstract: mjl21194 mjl21193 NPN 200 VOLTS 20 Amps POWER TRANSISTOR transistor mjl21193
    Text: ON Semiconductort PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. *ON Semiconductor Preferred Device


    Original     		PDF MJL21193 MJL21194 MJL21193* MJL21194* MJL21194 transistor MJL21194 NPN 200 VOLTS 20 Amps POWER TRANSISTOR transistor mjl21193

    NPN 200 VOLTS 20 Amps POWER TRANSISTOR

    Abstract: mjl21195
    Text: ON Semiconductort PNP MJL21195 * NPN MJL21196 * Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. • • •


    Original     		PDF MJL21195 MJL21196 MJL21195 MJL21196 NPN 200 VOLTS 20 Amps POWER TRANSISTOR

    transistor Mj21194

    Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR MJ21194 MJ21193
    Text: ON Semiconductort PNP MJ21193 * NPN MJ21194 * Silicon Power Transistors The MJ21193 and MJ21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. *ON Semiconductor Preferred Device


    Original     		PDF MJ21193 MJ21194 MJ21193 MJ21194 transistor Mj21194 NPN 200 VOLTS 20 Amps POWER TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductor Plastic Medium Power NPN Silicon Transistor BD159 . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 20 WATTS • Suitable for Transformerless, Line−Operated Equipment


    Original     		PDF BD159

    NPN 200 VOLTS 20 Amps POWER TRANSISTOR

    Abstract: No abstract text available
    Text: ON Semiconductort PNP MJ21195 * NPN MJ21196 * Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. *ON Semiconductor Preferred Device


    Original     		PDF MJ21195 MJ21196 MJ21195 MJ21196 NPN 200 VOLTS 20 Amps POWER TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: PNP MJ11021 (NPN) MJ11022 Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. http://onsemi.com • High dc Current Gain @ 10 Adc − • • •


    Original     		PDF MJ11021 MJ11022 MJ11022,

    2n5684

    Abstract: No abstract text available
    Text: ON Semiconductort PNP High−Current Complementary Silicon Power Transistors 2N5684 NPN 2N5686 . . . designed for use in high−power amplifier and switching circuit applications. • High Current Capability − • • IC Continuous = 50 Amperes. DC Current Gain −


    Original     		PDF 2N5684 2N5686 2n5684

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort NPN MJH6284 Darlington Complementary Silicon Power Transistors PNP MJH6287 . . . designed for general−purpose amplifier and low−speed switching motor control applications. ON Semiconductor Preferred Devices • Similar to the Popular NPN 2N6284 and the PNP 2N6287


    Original     		PDF MJH6284 MJH6287 2N6284 2N6287

    2N6488 power amplifier circuit

    Abstract: 2n6488
    Text: ON Semiconductor NPN Complementary Silicon Plastic Power Transistors 2N6487 2N6488 * PNP . . . designed for use in general−purpose amplifier and switching applications. 2N6490 • DC Current Gain Specified to 15 Amperes — • • • 2N6491* hFE = 20 −150 @ IC = 5.0 Adc


    Original     		PDF 2N6487 2N6488 2N6487, 2N6490 2N6488, 2N6491 O-220AB 2N6490 2N6491* 2N6488 power amplifier circuit 2n6488

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductor NPN BD787 Complementary Plastic Silicon Power Transistors PNP BD788 . . . designed for lower power audio amplifier and low current, high−speed switching applications. • Low Collector−Emitter Sustaining Voltage — • • 4 AMPERE


    Original     		PDF BD787 BD788 BD787, BD788 BD787

    mje243

    Abstract: mje253 mje253 transistor 200 watts audio amp power transistors
    Text: ON Semiconductor NPN MJE243 * PNP MJE253 * Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low−current, high−speed switching applications. *ON Semiconductor Preferred Device • High Collector−Emitter Sustaining Voltage —


    Original     		PDF MJE243 MJE253 MJE243, MJE253 mje243 mje253 transistor 200 watts audio amp power transistors

    MJH11021

    Abstract: No abstract text available
    Text: ON Semiconductort PNP MJH11017 * Complementary Darlington Silicon Power Transistors MJH11019 * . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11021 * • High DC Current Gain @ 10 Adc — •


    Original     		PDF MJH11017 MJH11019 MJH11021 MJH11018 MJH11020 MJH11022 MJH11018, MJH11020, MJH11022, MJH11017 MJH11021

    2N6488 MOTOROLA

    Abstract: 1N5825 221A-06 2N6487 2N6488 2N6490 2N6491 2N6497 MSD6100 ISS-20
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6487 Com plem entary Silicon P lastic Power Transistors 2N 6488* PNP . . . designed for use in general-purpose amplifier and switching applications. 2N 6490 2 N6491* • DC Current Gain Specified to 15 Amperes —


    OCR Scan     		PDF 2N6487 2N6490 2N6488 2N6491 O-220AB 2N6490 2N6491 2N6488 MOTOROLA 1N5825 221A-06 2N6497 MSD6100 ISS-20

    2N3716

    Abstract: 2N3714 2N3713 2N3715 2N3789 2N3792
    Text: ÆàMOS PEC SILICON NPN POWER TRANSISITORS NPN 2N3713 Thru 2N3716 . designed for medium-speed switching and amplifier applications FEATURES * * * * Gain Ranged Specified at 1A and 3A. Low VCE sat : typically 0.5 V @ lc=5 A , lB=0.5A Excellent Safe Operating Areas


    OCR Scan     		PDF 2N3789 2N3792 2N3713 2N3716 2N3713 2N3715 2N3714 2N3716

    bdx340

    Abstract: BDX330 BDX33C LJ e 34b SILICON COMPLEMENTARY transistors darlington 221A-06 BDX33B BDX34B BDX34C NPN bipolar junction transistors max hfe 2000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDX33B Darlington Com plem entary Silicon Power Transistors BDX33C* PNP . . . designed for general purpose and low speed switching applications. BDX34B • High DC Current Gain — hFE = 2500 typ. at Iq = 4.0 • Collector-Emitter Sustaining Voltage at 100 mAdc


    OCR Scan     		PDF BDX33B, BDX33C, 33C/34B, O-220AB BDX33B BDX33C" BDX34B BDX34C bdx340 BDX330 BDX33C LJ e 34b SILICON COMPLEMENTARY transistors darlington 221A-06 BDX34C NPN bipolar junction transistors max hfe 2000

    2N3716

    Abstract: 2N3713 2N3714 2N3715 2N3789 2N3792
    Text: SILICON NPN POWER TRANSISITORS NPN 2N3713 Thru 2N3716 . designed for medium-speed switching and amplifier applications FEATURES * * * * Gain Ranged Specified at 1A and 3A. Low VCE sat : typically 0.5 V @ lc=5 A , lB=0.5A Excellent Safe Operating Areas Complementary PNP Types Available 2N3789 thru 2N3792


    OCR Scan     		PDF 2N3789 2N3792 2N3713 2N3716 2N3713 2N3715 2N3714 2N3716 2N3713, 2N3792

    2N6547

    Abstract: 2N654 12 volt 200 Amp PWM 2N6546
    Text: SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS The 2N6546 and 2N6547 transistors are designed for high- NPN 2N6546 2N6547 voltage .high-speed,power switching inductive circuits where fail time is criticai.they are particularly, suited for 115 and 220 volt line


    OCR Scan     		PDF 2N6546 2N6547 2N6546 2N654? 2N654Speratures, F0R2N6546 VCFXARE100 2N6S46, 2N654 12 volt 200 Amp PWM

    2N3716

    Abstract: 3715 transistor 2N3791 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 3715 2N 3716 Silicon NPN Pow er Transistors . . . designed for medium-speed switching and amplifier applications. These devices feature: ♦Motorola P rtfrre d D«vlc» Total Switching Time at 3 A typically 1.15 us


    OCR Scan     		PDF 2N3791 2N3715 2N3716 3715 transistor 2N3791 MOTOROLA

    2N6547

    Abstract: 2N6546 12 volt 200 Amp PWM
    Text: Æ&m o s p e c SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS NPN The 2N6546 and 2N6547 transistors are designed for highvoltage .high-speed,power switching inductive circuits where fail 2N6546 2N6547 time is criticai.they are particularly, suited for 115 and 220 volt line


    OCR Scan     		PDF 2N6546 2N6547 2N654S F0R2N6546 VCFXARE100 2N6S46, 12 volt 200 Amp PWM

    MJL21103

    Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR JL21193 MJL21194 transistor MJL21194 MJL21193MJL21194
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M JL21193* NPN M JL21194* Silicon Power Transistors T h e M J L 2 1 1 9 3 a n d M J L 2 1 1 9 4 u tiliz e P e rfo ra te d E m itte r te c h n o lo g y a n d a re sp e c ific a lly d e s ig n e d fo r high p o w e r a u d io o utp ut, d is k h ea d p o s itio n e rs a nd lin e a r


    OCR Scan     		PDF JL21193* JL21194* MJL21193 JL21194 MJL21103 MJL21194 NPN 200 VOLTS 20 Amps POWER TRANSISTOR JL21193 transistor MJL21194 MJL21193MJL21194

    Untitled

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JH6282 Darlington Com plem entary Silicon Power Transistors M JH 6283* . . . designed for general-purpose amplifier and low-apeed switching motor control applications. M JH 6284* • M JH6285 PNP Similar to the Popular NPN 2N6282, 2N6283,2N6284 and the PNP 2N6285,


    OCR Scan     		PDF 2N6282, 2N6283 2N6284 2N6285, 2N6286 2N6287 JH6282 JH6285 MJH6287

    npn darlington transistor 150 watts

    Abstract: transistor MJH 11020 Motorola Bipolar Power Transistor Device Data MJH11017 MJH11020 mj10012 motorola MJH11022 oasis MJ10012 MJH10012
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JH 10012 S e » M M 1 0 0 1 2 Complementary Darlington Silicon Power Transistors PNP MJH11017* MJH11019* MJH11021* NPN MJH11018* MJH11020* MJH11022* , . . designed for use as general purpose amplifiers, low frequency switching and


    OCR Scan     		PDF MJH10012 MM10012) MJH11018 MJH11020 MJH11022 MJH11017 MJH11019 MJH11021 npn darlington transistor 150 watts transistor MJH 11020 Motorola Bipolar Power Transistor Device Data mj10012 motorola oasis MJ10012 MJH10012

    D45H7

    Abstract: D44H7 D45H4 D44H D44H1 D44H10 D44H4 D45H D45H1 D44H1.2
    Text: ÆàMOSPEC COMPLEMENTARY SILICON POWER TRANSISTORS PNP D45H Series NPN D44H Series .designed for various specific and general purpose application such as;output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0MHz; series,shunt and switching regulators; low


    OCR Scan     		PDF D44H1 D44H4 D45H4 D44H7 D45H7 D44H10 D4SH10 rb-10 D44H/45H1 D44H/45H4 D44H D45H D45H1 D44H1.2