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    NPN BIAS ESM Search Results

    NPN BIAS ESM Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy

    NPN BIAS ESM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RN1107F

    Abstract: RN1108F RN1109F RN2107F
    Text: RN1107F~RN1109F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1107F,RN1108F,RN1109F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors.


    Original     		PDF RN1107F RN1109F RN1108F RN2107F 2109F RN1107F RN1108F RN1109F

    RN1114F

    Abstract: RN1115F RN1116F RN1117F RN1118F RN2114F
    Text: RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors. Simplify circuit design


    Original     		PDF RN1114F RN1118F RN1115F RN1116F RN1117F RN2114F 2118F RN1114F RN1118F

    Untitled

    Abstract: No abstract text available
    Text: RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors. Simplify circuit design


    Original     		PDF RN1114F RN1118F RN1115F RN1116F RN1117F RN2114F 2118F RN1114F

    RN1114F

    Abstract: RN1115F RN1116F RN1117F RN1118F RN2114F
    Text: RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design


    Original     		PDF RN1114F RN1118F RN1115F RN1116F RN1117F RN2114F 2118F RN1114F RN1118F

    Untitled

    Abstract: No abstract text available
    Text: RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design


    Original     		PDF RN1114F RN1118F RN1115F RN1116F RN1117F RN2114F 2118F

    RN1114F

    Abstract: RN1115F RN1116F RN1117F RN1118F RN2114F
    Text: RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design


    Original     		PDF RN1114F RN1118F RN1115F RN1116F RN1117F RN2114F 2118F RN1114F RN1118F

    marking x2

    Abstract: RN1130F RN2130F MARKINGX2
    Text: RN1130F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1130F Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original     		PDF RN1130F RN2130F marking x2 RN1130F RN2130F MARKINGX2

    RN2101F

    Abstract: 1104F 1106F RN1101F RN1102F RN1103F RN1104F RN1105F RN1106F RN2106F
    Text: RN1101F~RN1106F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1101F,RN1102F,RN1103F RN1104F,RN1105F,RN1106F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm z With built-in bias resistors z Simplify circuit design


    Original     		PDF RN1101FRN1106F RN1101F RN1102F RN1103F RN1104F RN1105F RN1106F RN2101F RN2106F RN1101F 1104F 1106F RN1103F RN1106F RN2106F

    Untitled

    Abstract: No abstract text available
    Text: RN1131F,RN1132F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131F,RN1132F Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original     		PDF RN1131F RN1132F RN2131F, RN2132F

    RN1131F

    Abstract: RN1132F RN2131F RN2132F
    Text: RN1131F,RN1132F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131F,RN1132F Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original     		PDF RN1131F RN1132F RN2131F, RN2132F RN1132F RN2131F RN2132F

    406E

    Abstract: KRC401E KRC402E KRC403E KRC404E KRC405E KRC406E NPN bias ESM
    Text: SEMICONDUCTOR KRC401E~KRC406E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. D H G A 2 ᴌReduce a Quantity of Parts and Manufacturing Process.


    Original     		PDF KRC401E KRC406E KRC405E KRC403E KRC404E KRC402E KRC401E RC406E 406E KRC402E KRC403E KRC404E KRC405E KRC406E NPN bias ESM

    ESM 310

    Abstract: KRC407E KRC408E KRC409E NPN bias ESM
    Text: SEMICONDUCTOR KRC407E~KRC409E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ᴌWith Built-in Bias Resistors ᴌSimplify Circuit Design D H G A 2 ᴌReduce a Quantity of Parts and Manufacturing Process


    Original     		PDF KRC407E KRC409E KRC408E KRC407E ESM 310 KRC408E KRC409E NPN bias ESM

    RN1130F

    Abstract: RN2130F
    Text: RN1130F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1130F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z z z z Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original     		PDF RN1130F RN2130F RN1130F RN2130F

    ESM 310

    Abstract: KRC407E KRC408E KRC409E NPN bias ESM
    Text: SEMICONDUCTOR KRC407E~KRC409E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors Simplify Circuit Design D H G A 2 Reduce a Quantity of Parts and Manufacturing Process


    Original     		PDF KRC407E KRC409E KRC408E KRC407E ESM 310 KRC408E KRC409E NPN bias ESM

    RN1130F

    Abstract: RN2130F
    Text: RN1130F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1130F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z z z z Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original     		PDF RN1130F RN2130F RN1130F RN2130F

    kra421

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC416E~KRC422E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B ・With Built-in Bias Resistors. ・Simplify Circuit Design. D H G A 2 ・Reduce a Quantity of Parts and Manufacturing Process.


    Original     		PDF KRC416E KRC422E KRC416E KRC417E KRC418E KRC419E KRC420E KRC421E kra421

    RN2130F

    Abstract: No abstract text available
    Text: RN1130F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1130F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z z z z Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original     		PDF RN1130F RN2130F

    RN1112F

    Abstract: RN1113F RN2112F RN2113F
    Text: RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process


    Original     		PDF RN1112F RN1113F RN2112F RN2113F RN1113F RN2113F

    KRC411E

    Abstract: KRC410E KRC412E KRC413E KRC414E NPN bias ESM
    Text: SEMICONDUCTOR KRC410E~KRC414E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. D G A 2 C H Reduce a Quantity of Parts and Manufacturing Process.


    Original     		PDF KRC410E KRC414E KRC413E KRC411E KRC412E KRC413E KRC414E NPN bias ESM

    KRC407E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC407E~KRC409E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ・With Built-in Bias Resistors ・Simplify Circuit Design D G A 2 C H ・Reduce a Quantity of Parts and Manufacturing Process


    Original     		PDF KRC407E KRC409E KRC408E KRC409E KRC408E

    KRC403e

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC401E~KRC406E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ・With Built-in Bias Resistors. ・Simplify Circuit Design. D G A 2 C H ・Reduce a Quantity of Parts and Manufacturing Process.


    Original     		PDF KRC401E KRC406E KRC402E KRC403E KRC404E KRC405E KRC405E

    Untitled

    Abstract: No abstract text available
    Text: RN1131F,RN1132F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131F,RN1132F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process


    Original     		PDF RN1131F RN1132F RN2131F, RN2132F

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC410E~KRC414E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ・With Built-in Bias Resistors. ・Simplify Circuit Design. D G A 2 C 3 1 H ・Reduce a Quantity of Parts and Manufacturing Process.


    Original     		PDF KRC410E KRC414E KRC413E KRC413E KRC414E

    KRC416E

    Abstract: KRC422E 422E KRC417E KRC418E KRC419E KRC420E KRC421E r2kq
    Text: KRC416EKRC422E SEMICONDUCTOR EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.


    OCR Scan     		PDF KRC416E-KRC422E KRC416E KRC417E KRC418E KRC419E KRC420E KRC421E KRC422E KRC418E 422E r2kq