Untitled
Abstract: No abstract text available
Text: I PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS MCT2200 MCT2201 MCT2202 PACKAGE DIMENSIONS DESCRIPTION The MCT2200, MCT2201 and MCT2202 are optoisolators with phototransistor output. A gallium arsenide infrared emitting diode is selectively coupled with an NPN
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MCT2200
MCT2201
MCT2202
MCT2200,
MCT2201
MCT2202
E90700
C2079
C1683
C1296A
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C1679
Abstract: C1680 C2079 MCT2200 MCT2201 MCT2202 C1682 transistor NPN C1685 C1685 transistor transistor c1684 NPN
Text: tsO PHOTOTRANSISTOR OPTOCOUPLERS OPTOELEETBöHStS MCT2200 MCT2201 MCT2202 PACKAGE DIMENSIONS DESCRIPTION The MCT2200, MCT2201 and MCT2202 are optoisolators with phototransistor output. A gallium arsenide infrared emitting diode is selectively coupled with an NPN
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MCT2200
MCT2201
MCT2202
l2-54!
C2079
STI603A
MCT2200,
E90700
C1679
C1680
C1682 transistor
NPN C1685
C1685 transistor
transistor c1684 NPN
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Untitled
Abstract: No abstract text available
Text: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT270 PACKAGE DIMENSIONS DESCRIPTIO N The MCT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor. WWW
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MCT270
MCT270
E90700
ST1603A
C1682
C1681
C1683
C1685
C1296A
74bfc
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C1684 r
Abstract: C1684R C1680 C1685 R transistor
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT274 PACKAGE DIMENSIONS The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN high-gain silicon phototransistor. r ~
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MCT274
MCT274
E50151
C2090
C1681
C1682
C1684
C1683
100/is
C1685
C1684 r
C1684R
C1680
C1685 R transistor
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C1681
Abstract: transistor c1684 c1685 NPN C1685 transistor t051
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT272 PACKAGE DIMENSION! The MCT272 is a phototransistor-type optically coupled Isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. r ~ 6.86 6.35
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MCT272
MCT272
Ratio--75%
time--10
E50151
C2090
C1683
C1684
C1294
C1681
transistor c1684
c1685
NPN C1685
transistor t051
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C1685 transistor
Abstract: C1684 r .85 transistor C1685 transistor c1684 C1680 C1681 TRANSISTOR C1685 C1679 C1682 C1683
Text: L y 1 • PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT2 PACKAGE DIMENSIONS DESCRIPTION The MCT2 is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS AC line/digital logic isolator
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E90700
ST1603A
C2079
C1296A
c1294
C1685 transistor
C1684 r .85 transistor
C1685
transistor c1684
C1680
C1681
TRANSISTOR C1685
C1679
C1682
C1683
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4N35 QUALITY TECHNOLOGIES
Abstract: 4n35 equivalent C1684 r .85 transistor
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS 4N35 4N36 4N37 DESCRIPTION PACKAGE DIMENSIONS The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. t 6.86
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E50151
TYP20
C1685
C1296A
C1294
4N35 QUALITY TECHNOLOGIES
4n35 equivalent
C1684 r .85 transistor
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NPN C1685
Abstract: C1685 transistor
Text: EO PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N35 4N36 4N37 PACKAGE DIMENSIONS DESCRIPTION Æ db tft The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.
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E90700
NPN C1685
C1685 transistor
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C1684 r .85 transistor
Abstract: 100JjA optocouplers 4n35 25CC 4N35 4N36 4N37 C1684 transistor transistor c1684
Text: PHOTOTRANSISTOR OPTOCOUPLERS 0FT8ELECTB0HICS 4N35 4N36 4N37 DESCRIPTION PACKAGE DIMENSIONS “T h e 4N 35,4N 36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS
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ST1603A
C2Q79
E90700
hu1685
C1296A
C1S94
VCEat10
C1684 r .85 transistor
100JjA
optocouplers 4n35
25CC
4N35
4N36
4N37
C1684 transistor
transistor c1684
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Untitled
Abstract: No abstract text available
Text: su PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is
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TIL111
TIL111
E90700
ST1603A
C2079
74bbfiÂ
C1684
C1683
C1685
C1294
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4N25 APPLICATION NOTE
Abstract: 4N25 RFT 100k
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS 1 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS ffc rft cii The 4N25, 4N26, 4N27, and 4N28 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide diode. WWW FEATURES & APPLICATION!
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E50151
C1685
C1296A
C1294
4N25 APPLICATION NOTE
4N25
RFT 100k
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C1685 transistor
Abstract: C1685 R transistor H11A1Z transistor c1684 TRANSISTOR C1685 transistor c2090 C1685 C1682 transistor
Text: QUALITY TECHNOLOGIES VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z T The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor in a standard plastic
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H11A1
H11A1Z
E50151
C2090
C1683
C1684
C1685
C1296A
C1685 transistor
C1685 R transistor
H11A1Z
transistor c1684
TRANSISTOR C1685
transistor c2090
C1685
C1682 transistor
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Untitled
Abstract: No abstract text available
Text: [£Ö PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONI CS 3 CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE DIMENSION! DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. WWW High isolation voltage 5300 VAC RMS— 1 m inute
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CNY17-1
CNY17-3
CNY17-2
CNY17-4
CNY17
CNY17-1:
CNY17-2:
CNY17-3:
CNY17-4:
E90700
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C1681
Abstract: C1680 C1682 transistor C1243 C1686 MCT6 equivalent C1684 r .85 transistor C1682 MCT66 MCT66 QUALITY
Text: QUALITY TECHNOLOGIES DUAL PHOTOTRANSISTOR OPTOCOUPLERS 1 MCT6 MCT62 MCT61 MCT66 DESCRIPTION The MCT6X optoisolators have two channels for high density applications. For four channel applications, two-packages fit into a standard 16-pin DIP socket. Each channel is an NPN silicon planar phototransistor
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MCT62
MCT61
MCT66
16-pin
E50151
C1681
C1682
C1681
C1680
C1682 transistor
C1243
C1686
MCT6 equivalent
C1684 r .85 transistor
C1682
MCT66
MCT66 QUALITY
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C1684 r .85 transistor
Abstract: transistor c1684
Text: mm QUALITY PHOTOTRANSISTOR OPTOCOUPLER • [ te c h n o lo g ie s MCT275 DESCRIPTION The M CT275 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with a high voltage NPN silicon phototransistor.
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MCT275
MCT275
E50151
C1683
C1684
C1685
C1284
C1296A
C1684 r .85 transistor
transistor c1684
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GNY17-3
Abstract: CNV17 NPN C1685 c1685 C1685 npn GNY17 C1684 C1685 transistor CNY17-2 C1243
Text: [«51 PHOTOTRANSISTOR OPTOCOUPLERS OPTOE L E CTRONI CS CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE DIMENSIONS DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. rib rih rSi FEATURES 1.9 TYP ~ ï— 4.06 J twLTI
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CNY17-1
CNY17-3
CNY17-2
CNY17-4
ST1603A
C2079
CNY17
CNY17-1:
CNY17-2:
CNY17-3:
GNY17-3
CNV17
NPN C1685
c1685
C1685 npn
GNY17
C1684
C1685 transistor
C1243
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M0C8113
Abstract: OC8112 M0C8111 OC811 m0c8112
Text: E PHOTOTRANSISTOR OPTOCOUPLERS U OPTOELECTRONICS MOC8111 MOC8112 MOC8113 PACKAGE DIMENSIONS DESCRIPTION db Æ Æ The MOC series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. Î “ « t I l 03 I V c p _ g ì 8.89 8.38 ~ -J _ 2.3;
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MOC8111
MOC8112
MOC8113
MOC8111:
MOC8112:
MOC8113:
E90700
I2-54!
HT111
M0C8113
OC8112
M0C8111
OC811
m0c8112
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Untitled
Abstract: No abstract text available
Text: BQ PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS 1 MCT2 PACKAG E DIMENSIONS DESCRIPTION The M C T 2 is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting t t diode. • a SS I Œ 8.89 8.38 “ J FEATURES & APPLICATIONS
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ST1603A
74bbfl51
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C1680
Abstract: C1685 ci684 C1685 npn optocoupler 1123 C1243 C1679 C1681 C1682 C1683
Text: £ PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS V y A ^ / V ' v ' V v 'v v ^ // MCT2 DESCRIPTION PACKAGE DIMENSIONS ” t o I $ T ~ J S FEATURES & APPLICATIONS I ® 8.89 _ 8.38 ~ The MCT2 is a NPN silicon planar phototransistor 1optically coupled to a gallium arsenide infrared emitting
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c2079
E90700
C1296A
100MS
C1680
C1685
ci684
C1685 npn
optocoupler 1123
C1243
C1679
C1681
C1682
C1683
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CNY17 pulse circuit
Abstract: C1685 transistor transistor c1684 opt 300 cny17-3 NPN C1685 c1685 CNY17-2 equivalent transistor C1681 cny171 11
Text: s o PHOTOTRANSISTOR OPTOCOUPLERS M TK LEtm iltS CNY17-1 CNY17-3 CNY17-2 CNY17-4 DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. r& rfh dfe FEATURES High isolation voltage 5300 VAC RMS— 1 minute
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CNY17-1
CNY17-3
CNY17-2
CNY17-4
CNY17
STI603A
C2D79
CNY17-1:
CNY17-2:
CNY17-3;
CNY17 pulse circuit
C1685 transistor
transistor c1684
opt 300 cny17-3
NPN C1685
c1685
equivalent transistor
C1681
cny171 11
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Untitled
Abstract: No abstract text available
Text: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 1 CNY17F-1 CNY17F-2 CNY17F-3 PACKAGE DIMENSIONS DESCRIPTION db Æ db The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. FEATURES W W W 8.89 8 .3 8 High isolation voltage 5300 VAC RMS— 1 minute
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CNY17F-1
CNY17F-2
CNY17F-3
CNY17
CNY17F1:
CNY17F2:
CNY17F3:
E90700
ST1603A
C1680
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a4n25
Abstract: C1681 C1685 C1682 IC07 C1685 transistor transistor c1684 TRANSISTOR C1685 Control 4N25 4N26
Text: [ s O PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS DESCRIPTION ft Æ Æ T h e 4N25, 4N26, 4N 27, and 4N 28 se rie s of op tocouplers have an NPN silicon planar phototransistor optically co u pled to a gallium arsen id e diode.
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ST1603A
c2079
E90700
C1685
C1296A
C1294
a4n25
C1681
C1685
C1682
IC07
C1685 transistor
transistor c1684
TRANSISTOR C1685
Control 4N25
4N26
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CHY17
Abstract: CNY17-3 cny17 CHY17-1 CHY17-3 CHY17-2 NY17-3 CNY17 pulse circuit cny17-2 ny17
Text: E O PHOTOTRANSISTOR OPTOCOUPLERS GPTOELECÏRDNICS II CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE db r& The CNY17 series consists of a Gallium Arsenide I RED coupled with an NPN phototransistor. rifa FEATUM S High isolation voltage 5300 VAC RMS— 1 m inute 7500 VAC PEAK— 1 m inute
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CNY17-1
CNY17-3
CNY17-2
CNY17-4
CNY17
CNY17-1:
CNY17-2:
CNY17-3:
CNY17-4:
E90700
CHY17
CHY17-1
CHY17-3
CHY17-2
NY17-3
CNY17 pulse circuit
ny17
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Untitled
Abstract: No abstract text available
Text: G E H PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 1 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS DESCRIPTION The 4N 25 , 4N 26, 4N 27 , and 4 N 2 8 series of optocouplers ' t t H 6.86 MAX B10 w I Πcoupled to a gallium arsenide diode. _ i _ 8.89 8.38 have an NPN silicon planar phototransistor optically
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I2-54!
C1685
C1296A
74bbfl51
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