2SD2439
Abstract: 2SB1588
Text: Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1588 V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA
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2SD2439
2SB1588)
FM100
100max
150min
5000min
55typ
95typ
2SD2439
2SB1588
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PDF
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2SD2439
Abstract: 2SB1588
Text: Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1588 V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA
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2SD2439
2SB1588)
FM100
100max
150min
5000min
55typ
95typ
2SD2439
2SB1588
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PDF
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2SD2390
Abstract: 2SB1560
Text: Equivalent circuit 2SD2390 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1560 VCB=160V 100max µA V IEBO VEB=5V 100max µA V V VCEO 150 5 V V(BR)CEO IC=30mA 150min IC 10 A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA 2.5max
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2SD2390
2SB1560)
MT-100
100max
150min
5000min
55typ
95typ
2SD2390
2SB1560
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PDF
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2SD2390 equivalent
Abstract: 2SD2390 2SB1560
Text: Equivalent circuit 2SD2390 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1560 VCB=160V 100max µA V IEBO VEB=5V 100max µA V V VCEO 150 5 V V(BR)CEO IC=30mA 150min IC 10 A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA 2.5max
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2SD2390
2SB1560)
MT-100
100max
150min
5000min
55typ
95typ
2SD2390 equivalent
2SD2390
2SB1560
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PDF
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2SD2401
Abstract: 2SB1570
Text: C Equivalent circuit 2SD2401 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1570 2SD2401 Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC=30mA 150min IC 12 A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA
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2SD2401
2SB1570)
MT-200
100max
150min
5000min
55typ
2SD2401
2SB1570
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PDF
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sot223 device Marking
Abstract: transistor 355 ZX5T869G ZX5T869GTA ZX5T869GTC
Text: ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 27m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in
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ZX5T869G
OT223
OT223
sot223 device Marking
transistor 355
ZX5T869G
ZX5T869GTA
ZX5T869GTC
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PDF
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ZXTN2005G
Abstract: ZXTN2005GTA ZXTN2005GTC
Text: ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2005G
OT223
OT223
ZXTN2005G
ZXTN2005GTA
ZXTN2005GTC
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PDF
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zxtn
Abstract: sot223 device Marking ZXTN2005GTC ZXTN2005G ZXTN2005GTA
Text: ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2005G
OT223
OT223
R26100
zxtn
sot223 device Marking
ZXTN2005GTC
ZXTN2005G
ZXTN2005GTA
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PDF
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sot223 device Marking
Abstract: npn 20A ZX5T869G ZX5T869GTA ZX5T869GTC
Text: ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in
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ZX5T869G
OT223
OT223
Q26100
sot223 device Marking
npn 20A
ZX5T869G
ZX5T869GTA
ZX5T869GTC
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PDF
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MUN5211DW
Abstract: MUN5212DW MUN5213DW MUN5214DW MUN5215DW 7L Marking
Text: MUN5211DW Series Surface Mount Dual Bias Resistor Transistor NPN Silicon 2 3 1 6 5 P b Lead Pb -Free 1 4 5 6 NPN+NPN Maximum Ratings Symbol VCEO VCBO IC Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current Thermal Characteristics Characteristics (1)
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MUN5211DW
OT-363
SC-88)
29-Dec-05
OT-363
MUN5212DW
MUN5213DW
MUN5214DW
MUN5215DW
7L Marking
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PDF
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ZXTN25020DG
Abstract: TS16949 ZXTN25020DGTA ZXTP25020DG ON950 ZXTN25
Text: ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31mΩ PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor
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ZXTN25020DG
OT223
ZXTP25020DG
OT223
D-81541
ZXTN25020DG
TS16949
ZXTN25020DGTA
ZXTP25020DG
ON950
ZXTN25
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PDF
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X5T849
Abstract: ZX5T849G ZX5T849GTA ZX5T849GTC
Text: ZX5T849G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in
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ZX5T849G
OT223
OT223
X5T849
ZX5T849G
ZX5T849GTA
ZX5T849GTC
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PDF
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Untitled
Abstract: No abstract text available
Text: ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31mΩ PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor
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ZXTN25020DG
OT223
ZXTP25020DG
OT223
D-81541
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PDF
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ZXTN
Abstract: sot223 device Marking ZXTN2007G ZXTN2007GTA ZXTN2007GTC
Text: ZXTN2007G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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Original
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ZXTN2007G
OT223
OT223
ZXTN
sot223 device Marking
ZXTN2007G
ZXTN2007GTA
ZXTN2007GTC
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PDF
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2SC5071
Abstract: No abstract text available
Text: 2SC5071 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA V IEBO VEB=10V 100max µA V VCEO 400 10 V(BR)CEO IC=25mA 400min 12(Pulse24) A hFE VCE=4V, IC=7A 10 to 30 IB 4 A VCE(sat) IC=7A, IB=1.4A 0.5max
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2SC5071
MT-100
100max
400min
10typ
105typ
100mA
200mA
2SC5071
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PDF
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2SC5071
Abstract: No abstract text available
Text: 2SC5071 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA V IEBO VEB=10V 100max µA V VCEO 400 10 V(BR)CEO IC=25mA 400min 12(Pulse24) A hFE VCE=4V, IC=7A 10 to 30 IB 4 A VCE(sat) IC=7A, IB=1.4A 0.5max
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2SC5071
MT-100
100max
400min
10typ
105typ
100mA
200mA
2SC5071
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PDF
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2N5427
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5427 DESCRIPTION •Contunuous Collector Current-IC= 7A ·Low Collector-Emitter Saturation Voltage: VCE sat = 1.2V(Max) @IC= 7A ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching and wide-band amplifier applications.
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2N5427
10MHz
2N5427
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PDF
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2sC2654 data sheet
Abstract: 2SA1129 2SC2654
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2654 DESCRIPTION •High Collector Current: IC= 7A ·Low Collector Saturation Voltage :VCE sat = 0.3(V)(Max)@IC= 3A ·Complement to Type 2SA1129 APPLICATIONS ·Designed for low-frequency power amplifiers and mid-speed
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2SC2654
2SA1129
2sC2654 data sheet
2SA1129
2SC2654
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PDF
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2N542
Abstract: 2N5429 Vce(sat)
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5429 DESCRIPTION •Contunuous Collector Current-IC= 7A ·Low Collector-Emitter Saturation Voltage: VCE sat = 1.2V(Max) @IC= 7A ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching and wide-band amplifier applications.
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2N5429
10MHz
2N542
2N5429
Vce(sat)
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PDF
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Untitled
Abstract: No abstract text available
Text: ZXTN19060CG 60V NPN low sat medium power transistor in SOT223 Summary BVCEO > 60V BVCEX > 160V BVECO > 6V IC cont = 7A VCE(sat) < 50mV @ 1A RCE(sat) = 30mΩ PD = 3.0W Complementary part number ZXTP19060CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor
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ZXTN19060CG
OT223
ZXTP19060CG
OT223
D-81541
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PDF
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log sheet air conditioning
Abstract: ZXT849K ZXT849KTC
Text: ZXT849K 30V NPN LOW SATURATION TRANSISTOR IN D-PAK SUMMARY BVCEO = 30V : RSAT = 33m typical; IC = 7A DESCRIPTION Packaged in the D-Pak outline this high current high performance 30V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits
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ZXT849K
ZXT849KTC
25oad
log sheet air conditioning
ZXT849K
ZXT849KTC
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PDF
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2SC4297
Abstract: No abstract text available
Text: 2SC4297 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 12(Pulse24) A hFE VCE=4V, IC=7A 10 to 30 IB 4 A VCE(sat) IC=7A, IB=1.4A
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2SC4297
100max
400min
Pulse24)
10typ
105typ
10itter
FM100
2SC4297
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PDF
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TS16949
Abstract: ZXTN19060CG ZXTN19060CGTA ZXTP19060CG
Text: ZXTN19060CG 60V NPN low sat medium power transistor in SOT223 Summary BVCEO > 60V BVCEX > 160V BVECO > 6V IC cont = 7A VCE(sat) < 50mV @ 1A RCE(sat) = 30mΩ PD = 3.0W Complementary part number ZXTP19060CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor
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Original
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ZXTN19060CG
OT223
ZXTP19060CG
OT223
D-81541
TS16949
ZXTN19060CG
ZXTN19060CGTA
ZXTP19060CG
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PDF
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Untitled
Abstract: No abstract text available
Text: OBSOLETE ALTERNATIVE IS ZXTN2005G ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in
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Original
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ZXTN2005G
ZX5T869G
OT223
OT223
ZX5T869GTA
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PDF
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