color sensitive PHOTO TRANSISTOR
Abstract: Rise time of photo transistor KDT3002A npn photo transistor 3mm photo transistor
Text: Silicon photo transistor KDT3002A The KDT3002A is high sensitivity NPN silicon photo [Unit : mm] Dimensions transistor mounted in Φ3mm T-1 all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor
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KDT3002A
KDT3002A
color sensitive PHOTO TRANSISTOR
Rise time of photo transistor
npn photo transistor
3mm photo transistor
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Untitled
Abstract: No abstract text available
Text: Silicon photo transistor KDT3002A Dimensions The KDT3002A is high sensitivity NPN silicon photo transistor mounted in [Unit : mm] 3mm T-1 all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor
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KDT3002A
KDT3002A
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PHOTO TRANSISTOR
Abstract: Rise time of photo transistor photo transistor high current
Text: PRODUCTION SPECIFICATION PRODUCT LINE : PHOTO TRANSISTOR TITLE : HI-T70MB 1. GENERAL DESCRIPTION The HI-T70MB is a high sensitive NPN silicon photo transistor mounted in TO-18 type header with clear epoxy encapsulation. This photo transistor have awide angular response and
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HI-T70MB
HI-T70MB
200Lux
2000Lux
PHOTO TRANSISTOR
Rise time of photo transistor
photo transistor high current
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PH101
Abstract: No abstract text available
Text: SEC PHOTO TRANSISTOR ELECTRON DEVICE PH101 NPN EPITAXIAL DARLINGTON PHOTOTRANSISTOR PHOTO DETECTOR -N E P O C SERIES - DESCRIPTION The PH101 is a miniature NPN sillicon phototransistor having exceptionally stable characteristics and high illuminance sensiti
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PH101
PH101
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MAL12 PHOTO
Abstract: MAL12 Mali MAL11
Text: MAL11 MAL12 NPN m. fe ìil SILICON PHOTO DARLINGTON TRANSISTORS CASE T0-18L The M A L 1 1, MALI 2 are NPN silicon photo 0.185 darlington transistors for use in •l e n s 0.209 m a x sensitive photo detector circuits. They are supplied in selected light current groups.
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MAL11
MAL12
T0-18L
100mA
300mW
MAL12 PHOTO
MAL12
Mali
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MEL79
Abstract: 5mm npn phototransistor clear
Text: UKU NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL79 is NPN silicon planar photo transistor with 5mm clear transparent lens. It features ultra high illumination sensitivity and fast response time. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Emitter-Collector Voltage
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MEL79
500iiA
20mW/cm2
5mm npn phototransistor clear
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transistor 0117
Abstract: MDL82
Text: MDL82 NPN SILICON PHOTO DARLINGTON TRANSISTOR DESCRIPTION « .9 7 • 0.117 MDL82 is NPN silicon planar photo darlington transistor. It is encapsulated in a 3mm diameter, low profile and flangeless water clear transparent epoxy package. It features ultra high illumination
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MDL82
100jtiA
100ohm
6S477
transistor 0117
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MRD300
Abstract: MR0300 MR0310 MRD310 mr030 transistor 1247 color sensitive PHOTO TRANSISTOR
Text: MRD300 silicon MRD310 50 V O LT PHOTO TRANSISTOR NPN SILICON NPN SILICO N HIGH S E N S IT IV ITY PHOTO TRANSISTOR . . . designed fo r application in industrial inspection, processing and control, counters, sorters, switching and logic circuits or any design
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MRD300
MRD310
MRD300,
MRD300
MR0300
MR0310
MRD310
mr030
transistor 1247
color sensitive PHOTO TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: N E C t,4S7SHS 002^ 57^ 4 BQE D ELECTRONICS INC T - M r l'ip i r PHOTO TRANSISTOR PH102 NPN EPITAXIAL PHOTOTRANSISTOR PHOTO DETECTOR DESCRIPTION The PH102 is a miniature NPN sillicon pnototransistor having exceptionally stable characteristics mounted in a
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PH102
PH102
1000nm,
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03F1
Abstract: TLN103A TPS603A
Text: TOSHIBA TPS603A TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS603A PHOTO TRANSISTOR FOR PHOTO SENSOR Unit in mm PHOTOELECTRIC COUNTER VARIOUS KINDS OF READERS POSITION DETECTION CONTROLLER OF HOME ELECTRIC EQUIPM ENT DETECTOR FOR STOBOSCOPIC CONTROL
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TPS603A
TLN103A
TLN103A
03F1
TPS603A
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MRD150
Abstract: Photo transistor with open base
Text: MRD150 silicon PLASTIC NPN SILICON PHOTO TRANSISTORS 40 VOLT MICRO-T NPN SILICON PHOTO TRANSISTOR . . . designed fo r application in punched card and tape readers, pattern and character recognition equipm ent, shaft encoders, industrial inspection processing and control, counters, sorters, switching and
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MRD150
MRD150
Photo transistor with open base
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Untitled
Abstract: No abstract text available
Text: DESCRIPTION CRO MEL85 NPN SILICON PHOTO TRANSISTOR MEL85 is NPN silicon planar photo transistor. It is encapsulated in a 3mm diameter, low profile and flat top type water clear transparent epoxy package. It features ultra high illumination sensitivity, fast response time.
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MEL85
MEL85
May-99
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MEL79
Abstract: No abstract text available
Text: MEL79 NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL79 is NPN silicon planar photo transistor with 5mm clear transparent lens. It features ultra high illumination sensitivity and fast response time. ABSOLUTE MAXIMUM RATINGS 30V 5V 50mW -40 to +85°C -40 to + 10QX
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MEL79
100/tA
20mW/cm2
2354QK.
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Untitled
Abstract: No abstract text available
Text: N EC ELECTRONICS INC 30E D L^27S55 0 02T77b b • T " .4 |-7 5 PHOTO INTERRUPTER PS4008 PHOTO INTERRUPTER DESCRIPTION PACKAGE DIMENSIONS The PS4008 photo coupled interrupter module containing a GaAs in millimeters inches light em itting diode and an NPN silicon photo-transistor,
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27S55
02T77b
PS4008
PS4008
T-41-73
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5bb4
Abstract: No abstract text available
Text: NPN SILICON PHOTO-TRANSISTOR 0 4 . 9 8 0 .196 DESCRIPTION j The KEL79D is NPN silicon planar photo-transistor with 5 b b 4>1 ight rejective filter epoxy package. It features ultra high illuaination sensitivity and fast response tine. ABSOLUTE MAXIMUM RATINGS
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XEL79D
l00fik
500jUÃ
5bb4
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G1815
Abstract: g181 LHC-100 MEL709
Text: MEL709 NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL709 is NPN silicon photo-transistor with external base connection and built in a standard T-l 3/4 5mm water clear package. This device is suitable for use in a light sensor of the industrial control application.
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MEL709
100mA
200mW
-55to
MEL709-A
100jk
100/i
100aA
of2854Â
G1815
g181
LHC-100
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Untitled
Abstract: No abstract text available
Text: ¡i, PHOTO TRANSISTOR w- HÿJTÏEÎJi W .W E PH101 NPN EPITAXIAL DARLINGTON PHOTOTRANSISTOR PHOTO DETECTOR -• -N E P O C SERIES - DESCRIPTION The PH101 is a miniature NPN sillicon phototransistor having exceptionally stable characteristics and high illuminance sensiti
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PH101
PH101
J22686
LC-1027A
-1-77M
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MEL709D
Abstract: No abstract text available
Text: MEL709D NPN SILICON PHOTO TRANSISTOR DESCRIPTION 04.98 0.196 MEL709D is NPN silicon photo transistor with external base connection and built in a standard T -l 3/4 (5mm) light rejective epoxy package. Ali dimension in mm(inch) No Scale ToL : +/-0.3mm r0.7(0.03)
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MEL709D
200mW
950nm*
950nm.
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MEL78
Abstract: MIB31T
Text: IVI I KU NPN SILICON PHOTO TRANSISTOR DESCRIPTION M EL78 is NPN silicon planar photo transistor. It features illumination sensitivity, ultra fast high 03.15 0.124 response time. All dimension in mm(inch) No Scale Toi. : +/-0.3mm 5.3 M EL78 is spectrally and mechanically
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MEL78
MIB31T.
100pA
100/iA
MIB31T
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waitrony
Abstract: WPDT-270 photo darlington sensor
Text: Photo Transistor Waitrony Module No.: WPDT-270 1. General Description: The WPDT-270 is a high output NPN photo darlington transistor mounted in a water clear end looking epoxy package. This small photo darlington transistor permits narrow angular response.
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WPDT-270
WPDT-270
PDT-270
waitrony
photo darlington sensor
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TRANSISTOR 2341
Abstract: xp950nm
Text: CRO MEL709D NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL709D is NPN silicon photo transistor with external base connection and built in a standard T -l 3/4 5mm light rejective epoxy package. This device is suitable for use in a light sersor of the industial
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MEL709D
MEL709D
100mA
200mW
950nm
100pA
950nm.
TRANSISTOR 2341
xp950nm
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MEL708
Abstract: No abstract text available
Text: CKO / u o NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL708 is NPN silicon photo-transistor with external base connection and built in a standard T-l 3mm water clear package. This device is suitable for use in a light sensor of the industrial control application.
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MEL708
100mA
200mW
MEL708
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toshiba 4b1
Abstract: 4b1 toshiba photo interrupter darlington sensor TLN107A TPS617 TLN107
Text: TO SHIBA TPS617 TPS617 TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR Unit in mm PHOTO DARINGTON TRANSISTOR FOR PHOTO INTERRUPTER PHOTOELECTRIC COUNTER POSITION DETECTION AUTOMATIC CONTROL UNIT Visible light cut type black package High sensitivity : I l = 1.4mA (TYP.)
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TPS617
TLN107A,
TLN107A
driven40mm
TPS617
toshiba 4b1
4b1 toshiba
photo interrupter darlington sensor
TLN107
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NEC PS2001B
Abstract: PS2001B ps2001
Text: SEC PHOTO BECTM M DEVICE COUPLER PS2001B PHOTO COUPLER INDUSTRIAL USE -NEPO C SERIES - DESCRIPTION The PS2001B is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon photo transistor. FEATURES PACKAGE DIMENSIONS • High isolation voltage
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PS2001B
PS2001B
NEC PS2001B
ps2001
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