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    NPN PHOTOTRANSISTOR PACKAGE Search Results

    NPN PHOTOTRANSISTOR PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    NPN PHOTOTRANSISTOR PACKAGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    sfh siemens

    Abstract: npn phototransistor sfh 309 380nm SFH 309
    Text: SIEMENS NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter SFH 309 SFH 309 F Area not flat 4,5t-” Collector Transistor Cathode (Diode) 'Chip position


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    PCE25° sfh siemens npn phototransistor sfh 309 380nm SFH 309 PDF

    Untitled

    Abstract: No abstract text available
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT277 PACKAGE DIMENSIONS DESCRIPTION! The MCT277 ¡s a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.


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    MCT277 E50151 C1686 C1679 C1243 PDF

    TO46 lens phototransistor

    Abstract: LA12 SLT-50E1A SLT-50E1B SLT-50E1C
    Text: SLT-50E1 Planar Phototransistor Features • Planar NPN phototransistor • Wide acceptance angle • Four sensitivity ranges Emitter 25 min 5.34 Description This planar NPN silicon phototransistor has a response ranging from the visible to the infrared. The package is a modified TO-46 with a clear epoxy


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    SLT-50E1 SLT-50E1C QF-84 TO46 lens phototransistor LA12 SLT-50E1A SLT-50E1B PDF

    Untitled

    Abstract: No abstract text available
    Text: SLT-50E1 Planar Phototransistor Features • Planar NPN phototransistor • Wide acceptance angle • Four sensitivity ranges Emitter 25 min 5.34 Description This planar NPN silicon phototransistor has a response ranging from the visible to the infrared. The package is a modified TO-46 with a clear epoxy


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    SLT-50E1 SLT-50E1C PDF

    f41 marking

    Abstract: No abstract text available
    Text: SIEMENS NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter SFH 303 SFH 303 F Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherwise specified


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Opto Semiconductors NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter SFH 303 SFH 303 FA 9.0 8.2 B C E 11.5 10.9 0.6 0.4 6.9 0.7 0.4 7.8 7.5 25.2


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    GEO06351 PDF

    Untitled

    Abstract: No abstract text available
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT270 PACKAGE DIMENSION! DESCRIPTION The M CT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.


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    MCT270 MCT270 2500VAC 3000VAC E50151 C2090 C1681 C1682 C1683 C1684 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT270 PACKAGE DIMENSIONS DESCRIPTIO N The MCT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor. WWW


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    MCT270 MCT270 E90700 ST1603A C1682 C1681 C1683 C1685 C1296A 74bfc PDF

    Untitled

    Abstract: No abstract text available
    Text: OPTOELECTRONICS I PHOTOTRANSISTOR OPTOCOUPLER MCT271 DESCRIPTION PACKAGE DIMENSIONS db & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.


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    MCT271 MCT271 E90700 C1682 C1681 C1683 C1684 C1296A 74bbfl51 C1294 PDF

    npn phototransistor sfh 309

    Abstract: SFH 256 diode p1000 Fototransistor fototransistor led P1000 diode Q62702-P999 transistor 309 Q62702-P1000 Q62702-P174
    Text: SFH 309 SFH 309 F NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter SFH 309 SFH 309 F Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified


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    IPCE/IPCE25o npn phototransistor sfh 309 SFH 256 diode p1000 Fototransistor fototransistor led P1000 diode Q62702-P999 transistor 309 Q62702-P1000 Q62702-P174 PDF

    mouse Phototransistor

    Abstract: KM-4457 W610MP4BT/BD
    Text: NPN BLACK PLASTIC PHOTOTRANSISTOR W610MP4BT/BD Features Description ! MECHANICALLY AND SPECTRALLY MATCHED Made with NPN silicon phototransistor chips. TO THE KM-4457 INFRARED EMITTING LED LAMP SERIES. ! BLACK PLASTIC PACKAGE. ! COUPLED WITH KM-4457 INFRARED EMITTING


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    W610MP4BT/BD KM-4457 DSAD2239 APR/15/2003 100uA 500uA 940nm mouse Phototransistor W610MP4BT/BD PDF

    C1684 r

    Abstract: C1684R C1680 C1685 R transistor
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT274 PACKAGE DIMENSIONS The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN high-gain silicon phototransistor. r ~


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    MCT274 MCT274 E50151 C2090 C1681 C1682 C1684 C1683 100/is C1685 C1684 r C1684R C1680 C1685 R transistor PDF

    C1685 transistor

    Abstract: transistor c1684 C1681 C2079 KJh transistor TRANSISTOR C1685 C1679 C1680 C1686 MCT271
    Text: [ S PHOTOTRANSISTOR OPTOCOUPLER U OPTOELECTRONICS MCT271 DESCRIPTION PACKAGE DIMENSIONS & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor.


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    MCT271 ST1603A C2079 E90700 C1682 C1683 C1684 C1685 C1296A C1685 transistor transistor c1684 C1681 C2079 KJh transistor TRANSISTOR C1685 C1679 C1680 C1686 MCT271 PDF

    C1681

    Abstract: transistor c1684 c1685 NPN C1685 transistor t051
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT272 PACKAGE DIMENSION! The MCT272 is a phototransistor-type optically coupled Isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. r ~ 6.86 6.35


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    MCT272 MCT272 Ratio--75% time--10 E50151 C2090 C1683 C1684 C1294 C1681 transistor c1684 c1685 NPN C1685 transistor t051 PDF

    ic 8253

    Abstract: phototransistor, 850nm TEKT5400 8239 TEKT5400S TSKS5400S
    Text: TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor Description TEKT5400S is a high sensitive silicon NPN epitaxial planar phototransistor in a flat side view plastic package.A small recessed lens provides a high sensitivity in a low profile case.


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    TEKT5400S TEKT5400S 850nm TSKS5400S D-74025 ic 8253 phototransistor, 850nm TEKT5400 8239 TSKS5400S PDF

    Untitled

    Abstract: No abstract text available
    Text: TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor Description TEKT5400S is a high sensitive silicon NPN epitaxial planar phototransistor in a flat side view plastic package.A small recessed lens provides a high sensitivity in a low profile case.


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    TEKT5400S TEKT5400S 850nm TSKS5400S D-74025 PDF

    C1243

    Abstract: C2090
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS MCT276 PACKAGE IENSIONS The MCT276 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode Is selectively coupled with a high speed NPN silicon phototransistor. r~ 6.86


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    MCT276 MCT276 E5015CAL C1686 C1679 C1680 C1243 C1243 C2090 PDF

    Untitled

    Abstract: No abstract text available
    Text: TEST2600 Vishay Telefunken Silicon NPN Phototransistor Description TEST2600 is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature side view plastic package with cylindrical lens. Its epoxy casting is designed as a infrared filter to


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    TEST2600 TEST2600 950nm) TSSS2600 D-74025 20-May-99 PDF

    1-6732

    Abstract: TEKT5400S TEKT5400S-ASZ
    Text: TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor Description TEKT5400S is a high sensitive silicon NPN epitaxial planar phototransistor in a flat side view plastic package. A small recessed lens provides a high sensitivity in a low profile case.


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    TEKT5400S TEKT5400S TSKS5400S 2002/95/EC 2002/96/EC TEKT5400S-ASZ D-74025 08-Mar-05 1-6732 PDF

    mouse Phototransistor

    Abstract: KDA0529 KM-4457
    Text: NPN BLACK PLASTIC PHOTOTRANSISTOR L-610MP4BT/BD Features Description ! MECHANICALLY AND SPECTRALLY MATCHED Made with NPN silicon phototransistor chips. TO THE KM-4457 INFRARED EMITTING LED LAMP SERIES. ! BLACK PLASTIC PACKAGE. ! COUPLED WITH KM-4457 INFRARED EMITTING


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    L-610MP4BT/BD KM-4457 KDA0529 100uA 500uA SEP/17/2001 940nm mouse Phototransistor KDA0529 PDF

    IC AN 8249

    Abstract: ic 8253 TEKT5400S TEKT5400S-ASZ TSKS5400S
    Text: TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor Description TEKT5400S is a high sensitive silicon NPN epitaxial planar phototransistor in a flat side view plastic package. A small recessed lens provides a high sensitivity in a low profile case.


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    TEKT5400S TEKT5400S TSKS5400S 2002/95/EC 2002/96/EC 08-Apr-05 IC AN 8249 ic 8253 TEKT5400S-ASZ TSKS5400S PDF

    Phototransistor bp 101

    Abstract: fototransistor led bf 252 SFH 207 Q62702-P1057 Q62702-P1058 Q62702-P1192 Q62702-P85-S2 Q62702-P85-S3 Q62702-P85-S4
    Text: SIEMENS NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor NEW: Silicon NPN Phototransistor with Daylight Filter BP 103B BP 103 BF Area not flat Emitter _ 2 5 .2 _ J 2 4.2 Collector 8.2 Approx. weight 0 .2 g


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    /PCEtfpcE25Â 23SL0S oE025Â Phototransistor bp 101 fototransistor led bf 252 SFH 207 Q62702-P1057 Q62702-P1058 Q62702-P1192 Q62702-P85-S2 Q62702-P85-S3 Q62702-P85-S4 PDF

    TEMT 2100

    Abstract: TEMT2100
    Text: TELEFUNKEN Semiconductors TEMT 2100 Silicon NPN Phototransistor Description TEMT2100 is a high speed silicon NPN epitaxial planar phototransistor in miniature SOT–23 package for surface mounting on printed boards. Due to its waterclear epoxy the device is sensitive


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    TEMT2100 D-74025 TEMT 2100 PDF

    MID-18A22

    Abstract: No abstract text available
    Text: 1.8mm PACKAGE NPN PHOTOTRANSISTOR Description MID-18A22 Package Dimensions The MID-18A22 is a NPN silicon phototransistor mounted in a lensed , special dark plastic package.The lensing effect of the package allows an acceptance view Unit : mm inches φ1.80


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    MID-18A22 MID-18A22 40MIN. 940nm) 00MIN. PDF