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    NPN POWER DARLINGTON TO-3 150W Search Results

    NPN POWER DARLINGTON TO-3 150W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    NPN POWER DARLINGTON TO-3 150W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SILICON DARLINGTON NPN TRANSISTOR MJ4035 • Monolithic Darlington Configuration With Integrated Anti-Parallel Collector-Emitter Diode • Hermetic TO3 Metal Package. • Ideally Suited For General Purpose Switching And Amplifier Applications • Screening Options Available


    Original     		PDF MJ4035 300us, O-204AA)

    150w darlington transistor to3 package

    Abstract: LE17 MJ4035 TRANSISTOR C 1177
    Text: SILICON DARLINGTON NPN TRANSISTOR MJ4035 • Monolithic Darlington Configuration With Integrated Anti-Parallel Collector-Emitter Diode • Hermetic TO3 Metal Package. • Ideally Suited For General Purpose Switching And Amplifier Applications • Screening Options Available


    Original     		PDF MJ4035 300us, O-204AA) 150w darlington transistor to3 package LE17 MJ4035 TRANSISTOR C 1177

    transistor darlington package to.3

    Abstract: transistor mj3001 MJ2501 transistor mj3001 to-3 MJ3001 equivalent transistor darlington package to.3 3 pin MJ3001 150w darlington transistor to3 package pnp 150w darlington transistor to3 package
    Text: MJ2501 - PNP MJ3001 - NPN SEME LAB MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . COMPLEMENTARY DARLINGTON POWER TRANSISTOR 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . APPLICATIONS 1 1 .4 3 (0 .4 5 0 )


    Original     		PDF MJ2501 MJ3001 MJ3001 transistor darlington package to.3 transistor mj3001 transistor mj3001 to-3 MJ3001 equivalent transistor darlington package to.3 3 pin 150w darlington transistor to3 package pnp 150w darlington transistor to3 package

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


    Original     		PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E

    150w darlington transistor to3 package

    Abstract: NTE97 NPN Transistor 50A 400V NPN DARLINGTON 10A 500V transistor HV
    Text: NTE97 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE97 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly


    Original     		PDF NTE97 NTE97 150w darlington transistor to3 package NPN Transistor 50A 400V NPN DARLINGTON 10A 500V transistor HV

    Untitled

    Abstract: No abstract text available
    Text: COMPLEMENTARY POWER DARLINGTON BDS 28A,B,C -N2 BDS 29A,B,C -N2 • High DC Current Gain • Hermetic Ceramic Surface Mount Package • Screening Options Available • Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF BDS28A BDS29A BDS28B BDS29B BDS28C BDS29C O-276AB)

    8946

    Abstract: BDS28A BDS28B BDS28C BDS29A BDS29B BDS29C LE17
    Text: COMPLEMENTARY POWER DARLINGTON BDS28A/B/CN2 BDS29A/B/CN2 • High DC Current Gain • Hermetic Ceramic Surface Mount Package • Screening Options Available • Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF BDS28A/B/CN2 BDS29A/B/CN2 BDS28A BDS28C BDS29A BDS28B BDS29B BDS29C 8946 BDS28A BDS28B BDS28C BDS29A BDS29B BDS29C LE17

    CM3A

    Abstract: complementary darlington BDS28A BDS28B BDS28C BDS29A BDS29B BDS29C LE17
    Text: COMPLEMENTARY POWER DARLINGTON BDS28A/B/CM3A BDS29A/B/CM3A • High DC Current Gain • Hermetic Isolated TO-254AA Package • Screening Options Available • Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF BDS28A/B/CM3A BDS29A/B/CM3A O-254AA BDS28A BDS28C BDS29A BDS28B BDS29B BDS29C PRO28A/B/CM3A CM3A complementary darlington BDS28A BDS28B BDS28C BDS29A BDS29B BDS29C LE17

    Untitled

    Abstract: No abstract text available
    Text: COMPLEMENTARY POWER DARLINGTON BDS28A/B/CM3A BDS29A/B/CM3A • High DC Current Gain • Hermetic Isolated TO-254AA Package • Screening Options Available • Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF BDS28A/B/CM3A BDS29A/B/CM3A O-254AA BDS28A BDS28C BDS29A BDS28B BDS29B BDS29C

    Untitled

    Abstract: No abstract text available
    Text: COMPLEMENTARY POWER DARLINGTON BDS28A/B/CN2 BDS29A/B/CN2 • High DC Current Gain • Hermetic Ceramic Surface Mount Package • Screening Options Available • Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF BDS28A/B/CN2 BDS29A/B/CN2 BDS28A BDS28C BDS29A BDS28B BDS29B BDS29C

    MJ3001

    Abstract: MJ2501 MJ3001 equivalent Premier Devices transistor mj3001 npn power darlington to-3 150w
    Text: MJ2501 & MJ3001 10A, 150W, 80V Features: • Medium-power complementary Silicon Transistors for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain hFE = 1000 Typical at IC = 5.0A. • Monolithic construction with built Base-Emitter Shunt Resistors.


    Original     		PDF MJ2501 MJ3001 MJ2501 MJ3001 MJ3001 equivalent Premier Devices transistor mj3001 npn power darlington to-3 150w

    npn C 1740

    Abstract: No abstract text available
    Text: BDS29A BDS29B BDS29C MECHANICAL DATA Dimensions in mm 13.59 0.535 13.84 (0.545) COMPLEMENTARY POWER DARLINGTON TO254 METAL TRANSISTORS 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535)


    Original     		PDF BDS29A BDS29B BDS29C BDS29ASMD BDS29ASMD-JQR-B BDS29BSMD BDS29BSMD-JQR-B BDS29C npn C 1740

    2N3055 series voltage regulator

    Abstract: 2n3055 voltage regulator circuit diagram of 2N3055 series voltage regulator 2n3055 regulator 10a 2N3055 power supply circuit terminals of 2n3055 2N3055 power amplifier circuit pin configuration transistor 2n3055 NPN Transistor 2N3055 darlington positive negative voltage regulator variable
    Text: National Semiconductor Application Note 82 May 1974 INTRODUCTION The LM125 is a precision, dual, tracking, monolithic voltage regulator. It provides separate positive and negative regulated outputs, thus simplifying dual power supply designs. Operation requires few or no external components depending on the application. Internal settings provide fixed output


    Original     		PDF LM125 req959 2N3055 series voltage regulator 2n3055 voltage regulator circuit diagram of 2N3055 series voltage regulator 2n3055 regulator 10a 2N3055 power supply circuit terminals of 2n3055 2N3055 power amplifier circuit pin configuration transistor 2n3055 NPN Transistor 2N3055 darlington positive negative voltage regulator variable

    2n3055 voltage regulator

    Abstract: isc 2n3055 transistor circuit diagram of 2N3055 series voltage regulator 2N3055 series voltage regulator 2n3055 regulator 10a 2N3055 power amplifier circuit diagram 2N3055 power supply circuit 7390 LM125 80 amp 30v npn darlington
    Text: National Semiconductor Application Note 82 May 1974 INTRODUCTION The LM125 is a precision dual tracking monolithic voltage regulator It provides separate positive and negative regulated outputs thus simplifying dual power supply designs Operation requires few or no external components depending


    Original     		PDF LM125 2n3055 voltage regulator isc 2n3055 transistor circuit diagram of 2N3055 series voltage regulator 2N3055 series voltage regulator 2n3055 regulator 10a 2N3055 power amplifier circuit diagram 2N3055 power supply circuit 7390 80 amp 30v npn darlington

    BDX33C darlington pair

    Abstract: 40349 transistor BDY29 2N3773 transistor 2N3055 RCA 528 2n3771 2N3772 RCA RCA transistor 2n3055 RCA 40250
    Text: Ic to 80 A . . . P t to 300 W . . . V c E to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* le a 1 .S A max. PT - 8.7S W m u . TO-391* A i t . AAi 9U X 9U lc » 3.S A max. P y « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max.


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 BDX33C darlington pair 40349 transistor BDY29 2N3773 transistor 2N3055 RCA 528 2n3771 2N3772 RCA RCA transistor 2n3055 RCA 40250

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346

    2N3055 power amplifier circuit

    Abstract: 40636 40363 300W TRANSISTOR AUDIO AMPLIFIER 200w silicon audio power transistor 200W TRANSISTOR AUDIO AMPLIFIER 40872 2N3439 2N4063 40412
    Text: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6.5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386


    OCR Scan     		PDF 2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) 2N3055 power amplifier circuit 40636 40363 300W TRANSISTOR AUDIO AMPLIFIER 200w silicon audio power transistor 200W TRANSISTOR AUDIO AMPLIFIER 40872 2N3439 2N4063 40412

    RCA 40636 transistor

    Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
    Text: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 RCA 40636 transistor rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327

    BDS28B

    Abstract: BDS28A BDS28C BDS29A BDS29B BDS29C LE17
    Text: SEMELAB LTD ¿V I 37E D 0 6 iggßi 0133137 OOOOllö 3 • SMLB SEMELAB BDS 28A,B,C BDS 29A,B,C NEW PRODUCT COMPLEMENTARY POWER DARLINGTON SOT 93 METAL TRANSISTORS MECHANICAL FEATURES Dimensions in mm FEATURES 835 • HERMETICSOT93 METAL PACKAGE 03-7 • HIGH RELIABILITY


    OCR Scan     		PDF HERMETICSOT93 OT93M OT93M-ISO BDS28A BDS28B BDS28C BDS29A BDS29B BDS29C Emitter-bS29A BDS28C BDS29C LE17

    300W TRANSISTOR AUDIO AMPLIFIER

    Abstract: 2N6474 npn 40872 npn darlington 400v 15a transistor BDY29 2N1482 2N3054 2N344 2N5298 2N5786
    Text: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* A it . . A A i 9U X 9U le a 1 .S A m ax. lc » 3 .S A m ax. P y « 10 W m ax. TO-391* P T - 8 .7 S W m u . (TO-391* 90 x 9 0


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 300W TRANSISTOR AUDIO AMPLIFIER 2N6474 npn 40872 npn darlington 400v 15a transistor BDY29 2N1482 2N3054 2N344 2N5298 2N5786

    SGS10004

    Abstract: SGS10005P S100-04
    Text: S G S-THOMSON Ü7E D | 7^2=1537 00174L1 7 | 67C 1 5 3 6 3 D « MULTIEPITAXIAL PLANAR NPN . , ~ T~ SG S10004 SGS10004P SG810005 , t ÎW & J S 5 Î5 K -.-V »ïS fc«S ADVANCE DATA HIGH VOLTAGE FAST SWITCHING The SG S10004/10005 are silicon power Darlington transistors with integrated base-emitter


    OCR Scan     		PDF 00174L1 S10004 SGS10004P SG810005 S10004/10005 SGS10005P OT-93 O-218. MJ10004 SGS10004 S100-04

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    Transistor 2n6099

    Abstract: BD278 2N3055 2N6478 power amplifier circuit 300W TRANSISTOR AUDIO AMPLIFIER 40636 class ab audio amplifier circuit transistor 2N1482 2N5415 2N344
    Text: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V H O M ETA XIA L-B A SE N-P-N POWER TYPES <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* A it . AAi 9U X 9U le a 1 .S A max. lc » 3.S A max. Py « 10 W max. TO-391* PT - 8.7S W m u . (TO-391* 90 x 90 90 x lc * 4 A max.


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 Transistor 2n6099 BD278 2N3055 2N6478 power amplifier circuit 300W TRANSISTOR AUDIO AMPLIFIER 40636 class ab audio amplifier circuit transistor 2N1482 2N5415 2N344

    RCA 40411 transistor

    Abstract: rca 40411 audio amplifier with rca 40411 RCA 528 transistor 40411 40411 transistor 40411 RCA 40250 transistor BDY29 RCA 2N6254
    Text: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 RCA 40411 transistor rca 40411 audio amplifier with rca 40411 RCA 528 transistor 40411 40411 transistor 40411 RCA 40250 transistor BDY29 RCA 2N6254