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    NPN SILICON EPITAXIAL PLANAR TRANSISTOR 9018 Search Results

    NPN SILICON EPITAXIAL PLANAR TRANSISTOR 9018 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    NPN SILICON EPITAXIAL PLANAR TRANSISTOR 9018 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    L6 TRANSISTOR

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES z High DC current gain:hFE=200TYP Pb VCE=6.0V,IC=1.0mA z Lead-free High Voltage:VCEO=50V APPLICATIONS z NPN Silicon Epitaxial Planar Transistor z Audio frequency general purpose amplifier.


    Original     		2SC1623 200TYP OT-23 BL/SSSTC0018 L6 TRANSISTOR PDF

    2SC1623

    Abstract: L6 TRANSISTOR sot23 MARKING CODE L6 marking L6 sot23 L5 SOT23 l5 transistor sot23 L4 marking marking l4 sot-23 l6 sot23 l7 sot-23
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES z High DC current gain:hFE=200TYP Pb VCE=6.0V,IC=1.0mA z Lead-free High Voltage:VCEO=50V APPLICATIONS z NPN Silicon Epitaxial Planar Transistor z Audio frequency general purpose amplifier.


    Original     		2SC1623 200TYP OT-23 BL/SSSTC0018 2SC1623 L6 TRANSISTOR sot23 MARKING CODE L6 marking L6 sot23 L5 SOT23 l5 transistor sot23 L4 marking marking l4 sot-23 l6 sot23 l7 sot-23 PDF

    2sc 945 p transistor

    Abstract: transistor 2sc 945 945 npn transistor c 945 945 TRANSISTOR transistor amplifier 5v to 6v lc 945 transistor transistor 945 oms 450 TRANSISTOR 2SC
    Text: 2SC 945 NPN SILICON PIANAR EPITAXIAL TRANSISTOR CASE 1’0-92B 2SC 945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTA'RÏ TO THE PNP TYPE 2SA733. ABSOLUTE MAXIMUM RATINGS C o lle c to r-B a s e V o ltag e


    OCR Scan     		2SA733. T0-92B 100mA 200mA 250mW 3-B93303 J0321 2sc 945 p transistor transistor 2sc 945 945 npn transistor c 945 945 TRANSISTOR transistor amplifier 5v to 6v lc 945 transistor transistor 945 oms 450 TRANSISTOR 2SC PDF

    transistor BC 945

    Abstract: BC 945 transistor lc 945 p transistor BC 945 p lc 945 transistor transistor 2 FC 945 2sc 945 p transistor transistor 2sc 945 transistor LC 945 T0-92B
    Text: 2SC 945 NPN SILICON PIANAR EPITAXIAL TRANSISTOR CASE T0-92B 2SC 945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTA'RY TO THE PNP TYPE 2SA733. ABSOLUTE MAXIMUM RATINGS C ollector-B ase V oltage C o llecto r-E m itter V oltage


    OCR Scan     		2sa733. t0-92b 100mA 200mA 250mW transistor BC 945 BC 945 transistor lc 945 p transistor BC 945 p lc 945 transistor transistor 2 FC 945 2sc 945 p transistor transistor 2sc 945 transistor LC 945 PDF

    2n2711

    Abstract: 2N2924 2n3394 2N3397 2N2925 transistor 2n3391 2N3396 TRANSISTOR MPS 2N2923 2N2716
    Text: MPS/2N6573 thru' 6576 and similar types NPN SILICON TRANSISTOR DESCRIPTION The above types are NPN silicon planar epitaxial transistors for use in A F small amplifiers and direct coupled circuits. Their maximum power I6O111W at Ta = 25°C . dissipation CASE T0-92A


    OCR Scan     		MPS/2N6573 I6O111W T0-92A T0-92B MPS/2N2711 MPS/2N27I2 12pFii MPS/2N2716 MPS/2N2923 MPS/2N2924 2n2711 2N2924 2n3394 2N3397 2N2925 transistor 2n3391 2N3396 TRANSISTOR MPS 2N2923 2N2716 PDF

    2N2712

    Abstract: 2N2923 transistor 2n3391 transistor 2n2712 2n3394 2N3395 2N3398 mps6566 2N2711 2n3397
    Text: MPS/2N2923,4,5 and similar types NPN SILICON TRANSISTOR DESCRIPTION The above types are NPN silicon planar epitaxial transistors for use in AF small amplifiers and direct coupled circuits. CASE T0-92Á Their maximum power dissipation = 160mW at Ta=25°C. MPS TYPES


    OCR Scan     		MPS/2N2923 160mWat T0-92A T0-92B MPS/2N2711 MPS/2N2712 12pFn@ MPS/2N2716 MPS/2N2924 2N2712 2N2923 transistor 2n3391 transistor 2n2712 2n3394 2N3395 2N3398 mps6566 2N2711 2n3397 PDF

    ST 9018

    Abstract: Transistor st 9018 transistor c 9018 9018 transistor S 9018 to-92 9018 9018 transistor NPN equivalent of 9018 transistor NPN Silicon Epitaxial Planar Transistor 9018 transistor 9018 NPN
    Text: ST 9018 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF

    transistor c 9018

    Abstract: ST 9018 9018 transistor NPN Silicon Epitaxial Planar Transistor 9018 Transistor st 9018 equivalent of 9018 transistor 9018 S 9018 to-92 9018 D Transistor Br 9018
    Text: ST 9018 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF

    transistor c 9018

    Abstract: transistor 9018 NPN NPN Silicon Epitaxial Planar Transistor 9018 9018 transistor NPN 9018 transistor transistor 9018
    Text: ST 9018 NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be


    Original     		PDF

    transistor c 9018

    Abstract: ic 9018 9018 NPN Silicon Epitaxial Planar Transistor 9018 9018 transistor 9018 transistor NPN transistor 9018 NPN C 9018 transistor Br 9018
    Text: ST 9018 NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be


    Original     		PDF

    CSA916

    Abstract: CSC1941
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC1941 TO-237 BCE Audio Frequency Amplifier Applications Complementary CSA916 ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified


    Original     		ISO/TS16949 CSC1941 O-237 CSA916 25deg C-120 CSA916 CSC1941 PDF

    NPN Silicon Epitaxial Planar Transistor

    Abstract: transistor marking PB 2SC4215W SOT323 Marking bl Audio Frequency General Purpose Amplifier sot323 transistor marking Marking qy marking BR SOT sot323 marking K MARKING K SOT323
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z 2SC4215W Pb Lead-free Power dissipation. PC=100mW APPLICATIONS z Audio frequency general purpose amplifier. SOT-323 ORDERING INFORMATION Type No. Marking Package Code


    Original     		2SC4215W 100mW) OT-323 BL/SSSTF041 NPN Silicon Epitaxial Planar Transistor transistor marking PB 2SC4215W SOT323 Marking bl Audio Frequency General Purpose Amplifier sot323 transistor marking Marking qy marking BR SOT sot323 marking K MARKING K SOT323 PDF

    2N2924

    Abstract: No abstract text available
    Text: iVlJrà/zrN j j y u m r u CRO ¿jyo and similar types NPN SILICON TRANSISTOR D E S C R IP T IO N The above types are NPN silicon planar epitaxial transistors for use in A F small amplifiers and direct coupled circuits. CASE T0-92A Their maximum power dissipation


    OCR Scan     		T0-92A T0-92B I6O111W MPS/2N2711 MPS/2N2712 12pPti@ MPS/2N2716 200MHz nn-300 Dec-95 2N2924 PDF

    SOT-323 marking L6

    Abstract: l4 transistor SOT-323 marking .L6 2SC1623W transistor marking L6 L6 TRANSISTOR NPN Silicon Epitaxial Planar Transistor marking L6 npn
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High DC current gain: hFE=200TYP. z High voltage: VCEO=50V. z Power dissipation. PC=200mW 2SC1623W Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier.


    Original     		2SC1623W 200TYP. 200mW) OT-323 BL/SSSTF035 SOT-323 marking L6 l4 transistor SOT-323 marking .L6 2SC1623W transistor marking L6 L6 TRANSISTOR NPN Silicon Epitaxial Planar Transistor marking L6 npn PDF

    CSA952

    Abstract: CSC2001
    Text: IS / IECQC 700000 IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 750100 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC2001 9AW TO-92 BCE MARKING : CSC 2001 K Audio Frequency Power Amplifier.


    Original     		CSC2001 CSA952 25deg C-120 CSA952 CSC2001 PDF

    T0-92B

    Abstract: No abstract text available
    Text: 2SC 945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTA'RY TO THE PNP TYPE 2SA733. CASE T0-92B <cy I !I • ABSOLUTE MAXIMUM RATINGS ECB Collector-Base Voltage VCBO 60V Collector-Emitter Voltage VCEO


    OCR Scan     		2SC945 2SA733. T0-92B 100mA 200mA 250mW BOX69477 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC2001 9AW TO-92 BCE MARKING : CSC 2001 K Audio Frequency Power Amplifier. Complementary CSA952 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)


    Original     		CSC2001 CSA952 25deg C-120 PDF

    CSA952

    Abstract: CSC2001
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC2001 9AW TO-92 BCE MARKING : CSC 2001 K Audio Frequency Power Amplifier. Complementary CSA952 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)


    Original     		CSC2001 CSA952 25deg C-120 CSA952 CSC2001 PDF

    2n2712

    Abstract: transistor 2n3391 2N2711 2N3398 2N3394 2N2923 2n2925 2N3395 2N3397 T0-92B
    Text: iv lJ r à / z r N ^ y u c n ru j o y o and similar types NPN SILICON TRANSISTOR DESCRIPTION The above types are N P N silicon planar epitaxial transistors for use in A F sm all am plifiers and direct coupled circuits. CASE T 0-92A Their maximum pow er dissipation


    OCR Scan     		160mW T0-92A T0-92B MPS/2N2711 UMPS/2N2712 12pPii@ MPS/2N2716 UPS/2N2923 MPS/2N2924 UPS/2N2925 2n2712 transistor 2n3391 2N2711 2N3398 2N3394 2N2923 2n2925 2N3395 2N3397 PDF

    2N2712

    Abstract: 6573 2N2716
    Text: M PS/2N 6573 thru' 6576 and sim ilar types CRO NPN SILICON TRANSISTOR DESCRIPTION The above types are N P N silico n planar epitaxial transistors for use in A F sm all am plifiers and direct coupled circu its. T h eir m axim um po w er dissipation = I6O111W at T a = 2 5 ° C .


    OCR Scan     		I6O111W T0-92A T0-92B MPS/2N2711 MPS/2N2712 MPS/2N2716 MPS/2N2923 MPS/2N2924 MPS/2N2925 MPS/2N3390 2N2712 6573 2N2716 PDF

    2N2712

    Abstract: 2n2923 2N2711 MPS6573 ps/MPS+2515 2N2925 transistor 2n2712
    Text: CRO M PS/2N6573 thru' 6576 and similar types NPN SILICON TRANSISTOR DESCRIPTION T he above types are N P N silico n planar epitaxial transistors for use in A F sm all am plifiers and direct coupled circu its. T h eir m axim um po w er dissipation = I6O111W at T a = 2 5 ° C .


    OCR Scan     		I6O111W PS/2N6573 T0-92A T0-92B MPS/2N2711 MPS/2N2712 12pFn® MPS/2N2716 MPS/2N2923 MPS/2N2924 2N2712 2n2923 2N2711 MPS6573 ps/MPS+2515 2N2925 transistor 2n2712 PDF

    Untitled

    Abstract: No abstract text available
    Text: CRO DESCRIPTION The above types are NPN silicon planar epitaxial transistors for use in AF small amplifiers and direct coupled circuits. Their maximum power dissipation = 160mW at Ta=25°C. CASE T0-92Á MPS TYPES MPS/2N2923,4,5 and similar types NPN SILICON


    OCR Scan     		160mW T0-92à MPS/2N2923 T0-92B MPS/2N2711 12pFn MPS/2N2712 MPSMPS/2N3398 200MHz Dec-95 PDF

    beta transistor 2N2222

    Abstract: 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 GET3S3B GET3638A 2NSOOO 2N6001 2N6003 2N6000 2N6002 2N60D2 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003


    OCR Scan     		50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 beta transistor 2N2222 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002 PDF

    2NS35

    Abstract: D33025 TRANSISTOR 2n3901 pnp beta 250 ft 150 2N60C 2N38S 2N601 transistor 2n3391 2N6000 GET3014
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 GET3S3B GET3638A 2NSOOO 2N6001 2N6003 2N6000 2N6002 2N60D2 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003


    OCR Scan     		50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2NS35 D33025 TRANSISTOR 2n3901 pnp beta 250 ft 150 2N60C 2N38S 2N601 transistor 2n3391 2N6000 GET3014 PDF