Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TC200 Preliminary NPN EPITAXIAL SILICON TRANSISTOR EPITAXIAL PLANAR NPN TRANSISTOR DESCRIPTION The UTC TC200 is an epitaxial planar NPN transistor; it uses UTC’s advanced technology to provide the customers with high DC
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TC200
TC200
TC200L-x-T92-B
TC200G-x-T92-B
TC200L-x-T92-K
TC200G-x-T92-K
QW-R201-087
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC4467 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR DESCRIPTION The UTC 2SC4467 is a silicon NPN triple diffused planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-base
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2SC4467
2SC4467
2SC4467L-x-T3P-T
2SC4467G-x-T3P-T
2SC4467L-x-T3N-T
2SC4467G-x-T3N-T
QW-R214-018
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Untitled
Abstract: No abstract text available
Text: SOP8501 SOP8501 Ordering number : ENN8007 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • • High breakdown voltage. VCEO≥400V Excellent hFE linearlity. Specifications
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OP8501
ENN8007
2000mm2â
OP8501/D
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ITR04446
Abstract: ITR04587
Text: SOP8501 Ordering number : ENN8007 SOP8501 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • • High breakdown voltage. VCEO≥400V Excellent hFE linearlity. Specifications
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OP8501
ENN8007
VCEO400V)
2000mm2
ITR04446
ITR04587
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transistor b1
Abstract: hlb124 NPN Transistor 600V 1S1000 utchlb124
Text: UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. 1 FEATURES * High Speed Switching * Low Saturation Voltage
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HLB124
HLB124
O-220
HLB124L
QW-R203-029
transistor b1
NPN Transistor 600V
1S1000
utchlb124
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L6 TRANSISTOR
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES z High DC current gain:hFE=200TYP Pb VCE=6.0V,IC=1.0mA z Lead-free High Voltage:VCEO=50V APPLICATIONS z NPN Silicon Epitaxial Planar Transistor z Audio frequency general purpose amplifier.
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2SC1623
200TYP
OT-23
BL/SSSTC0018
L6 TRANSISTOR
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2SC1623
Abstract: L6 TRANSISTOR sot23 MARKING CODE L6 marking L6 sot23 L5 SOT23 l5 transistor sot23 L4 marking marking l4 sot-23 l6 sot23 l7 sot-23
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES z High DC current gain:hFE=200TYP Pb VCE=6.0V,IC=1.0mA z Lead-free High Voltage:VCEO=50V APPLICATIONS z NPN Silicon Epitaxial Planar Transistor z Audio frequency general purpose amplifier.
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2SC1623
200TYP
OT-23
BL/SSSTC0018
2SC1623
L6 TRANSISTOR
sot23 MARKING CODE L6
marking L6 sot23
L5 SOT23
l5 transistor
sot23 L4 marking
marking l4 sot-23
l6 sot23
l7 sot-23
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2SC4548
Abstract: 2SA1740
Text: 2SA1740 / 2SC4548 Ordering number : EN3188A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor NPN Triple Diffuesd Planar Silicon Transistor 2SA1740 / 2SC4548 High-Voltage Driver Applications Features • • • High breakdown votlage.
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2SA1740
2SC4548
EN3188A
2SA1740
250mm20
2SC4548
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2SA1784
Abstract: 2SA1781
Text: Ordering number:EN3520 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA1784/2SC4644 High Voltage Driver Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage VCEO≥400V .
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EN3520
2SA1784/2SC4644
VCEO400V)
2SA17814/2SC4644]
2SA1784
2SA1784
2SA1781
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Untitled
Abstract: No abstract text available
Text: UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS *HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS *COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES *High Voltage :V BR CEO= 300V
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2SC2482
O-92NL
100ms*
500ms*
QW-R211-015
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Untitled
Abstract: No abstract text available
Text: UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS *HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS *COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES *High Voltage :V BR CEO= 300V
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2SC2482
O-92NL
QW-R211-015
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2SC2482
Abstract: common collector amplifier applications ce20v vc20e
Text: UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS *HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS *COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES *High Voltage :V BR CEO= 300V
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2SC2482
O-92NL
QW-R211-015
2SC2482
common collector amplifier applications
ce20v
vc20e
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BFX34
Abstract: No abstract text available
Text: BFX34 SILICON NPN TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at
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BFX34
BFX34
-65ny
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BFX34
Abstract: No abstract text available
Text: BFX34 SILICON NPN TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon Epitaxial Planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at
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BFX34
BFX34
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BFX34
Abstract: DSASW003743
Text: BFX34 SILICON NPN TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon Epitaxial Planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at
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BFX34
BFX34
DSASW003743
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bfx34
Abstract: No abstract text available
Text: BFX34 SILICON NPN TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at
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BFX34
BFX34
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2N5770
Abstract: T0-92A T092A
Text: 2N5770 NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 is NPN silicon planar epitaxial transistor designed for small signal high frequency amplifiers and oscillators. I CASE T0-92A EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltiage
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2N5770
2N5770
T0-92A
625mW
300mW
60MHz
-3-00C4C9
3MHS321
B0kfe947y
T0-92A
T092A
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2N5770
Abstract: T0-92A MICRO ELECTRONICS ltd transistor
Text: 2N5770 NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 is NPN silicon planar epitaxial transistor designed for small signal High frequency amplifiers and oscillators. 1 CASE T0-92A EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltiage
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2N5770
T0-92A
625mW
300mW
60MHz
-3-00B4g0
T0-92A
MICRO ELECTRONICS ltd transistor
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BSS59
Abstract: bss 97 transistor
Text: BSS59 Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Verstärker und schnelle Schalter Applications: A m piifier and high speed switches Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage
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BSS59
BSS59
bss 97 transistor
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3053 TRANSISTOR
Abstract: transistor 3053 2N3053
Text: Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Allgem ein Applications: G eneral Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Hohe Strom verstärkung • High current gain
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Kolle00
3053 TRANSISTOR
transistor 3053
2N3053
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2n3700
Abstract: tfk 140
Text: Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Allgem ein Applications: G eneral Features: Besondere Merkmale: • Hohe Sperrspannung • High reverse voltage • Hohe S trom verstärkung • High current gain
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3094 transistor
Abstract: BF422 BF423 OQJ300
Text: BF422 NPN SILICON M 1C R D PLANAR HIGH EPITAXIAL VOLTAGE TRANSISTOR El— ECTRCDINIICIIS MECHANICAL OUTLINE TO-92B GENERAL DESCRIPTION ; The BF422 is a NPN silicon planar epitaxial transistor. It features high voltage and is intended for high voltage class A output stage of audio frequency
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BF422
BF423
10Kohm
-30mA
Vce-50V.
00x49477
OQJ300,
3094 transistor
BF423
OQJ300
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2n3019
Abstract: tfk 140 3019 npn transistor 554 -1 transistor
Text: Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: A llgem ein und Verstärker Applications: G eneral and a m plifier Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Hohe S trom verstärkung
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transistor BR 471 A
Abstract: be27 BF 471 Transistor A 471 CM 90-PS Scans-0010675
Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video-B-class pow er stages in TV receivers Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage
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N125A
626/1177A2
transistor BR 471 A
be27
BF 471
Transistor A 471
CM 90-PS
Scans-0010675
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