NPN SILICON POWER TRANSISTOR Search Results

NPN SILICON POWER TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

NPN SILICON POWER TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL  DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier.  FEATURES * Low frequency power amplifier 	Original	2SD667 2SD667 2SD667L-x-T9N-B 2SD667G-x-T9N-B 2SD667L-x-T9N-K 2SD667G-x-T9N-K O-92NL QW-R211-019	PDF
290A transistor Abstract: 2SD667 transistor 2sd667 Text: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. FEATURES * Low frequency power amplifier * Halogen Free	Original	2SD667 2SD667 2SD667G-T9N-B 2SD667G-T9N-K O-92NL QW-R211-019 290A transistor transistor 2sd667	PDF
MJL3281A MJL1302A Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors	Original	MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A MJL3281A-D complementary npn-pnp power transistors	PDF
MJEC340 Abstract: No abstract text available Text: MJEC340 CHIP MEDIUM POWER NPN 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR NPN SILICON 300 VOLTS .useful for high-voltage general purpose applications. - Suitable for Transformerless, Line-Operated Equipment - Thermopad Construction Provides High Power Dissipation Rating	OCR Scan	MJEC340	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13003DH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003DH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003DH 13003DH 13003DHL-x-TM3-T 13003DHL-x-T60-F-K 13003DHL-x-T92-A-B 13003DHL-x-Tat QW-R223-011	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-F-K 13003BSL-T92-F-B 13003BSL-T92-F-K QW-R223-018	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-K 1300at QW-R223-018	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13003EDA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003EDA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003EDA 13003EDA 13003EDAL-TM3-T 13003EDAL-T60-K QW-R223-020	PDF
PNP Transistors Abstract: TO-205AD 40349 Text: 40349 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40349 VCEV 160 hFE 30 IC .15 Notes VCEO 140 hFE A .15 COB Polarity NPN ICEV Power Dissipation	Original	O-205AD/TO-39 07-Sep-2010 PNP Transistors TO-205AD 40349	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13002AH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13002AH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13002AH 13002AH 13002AHL-TM3-T 13002AHL-T60-F-K 13002AHL-T92-F-B 13002AHL-T92-F-K QW-R223-019	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13003EDA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003EDA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003EDA 13003EDA 13003EDAL-TM3-T 13003EDAL-T60-F-K 13003EDAL-T92-F-B QW-R223-020	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13002AH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13002AH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13002AH 13002AH 13002AHL-TM3-T 13002AHL-T60-F-K QW-R223-019	PDF
bcp68t1 Abstract: BCP68T3 BCP69T1 SMD310 Text: ON Semiconductort BCP68T1 NPN Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the	Original	BCP68T1 OT-223 r14525 BCP68T1/D bcp68t1 BCP68T3 BCP69T1 SMD310	PDF
MJE802 Abstract: No abstract text available Text: MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON APPLICATIONS GENERAL PURPOSE SWITCHING ■ DESCRIPTION The MJE802 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration,	Original	MJE802 MJE802 OT-32 OT-32	PDF

IC-3479 Abstract: IC-8359 pa1428a uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1428A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1428A is NPN silicon epitaxial Darlington Power (in millimeters) Transistor Array that built in Surge Absorber 4 circuits	Original	PA1428A PA1428A PA1428AH IC-3479 IC-8359 uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH	PDF
IC-6634 Abstract: PA1478 MEI-1202 MF-1134 IEI-1213 2di50 DARLINGTON TRANSISTOR ARRAY Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1478 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1478 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in Surge Absorber and	Original	PA1478 PA1478 PA1478H IC-6634 MEI-1202 MF-1134 IEI-1213 2di50 DARLINGTON TRANSISTOR ARRAY	PDF
BUV26 Abstract: V50B Text: BUV26 Switchmode Series NPN Silicon Power Transistor Designed for high–speed applications such as: • • • • Switchmode Power Supplies High Frequency Converters Relay Drivers Driver http://onsemi.com 12 AMPERES NPN SILICON POWER TRANSISTORS 90 VOLTS	Original	BUV26 85LLC r14525 BUV26/D BUV26 V50B	PDF
BUV23 Abstract: motorola transistor 0063 Text: MOTOROLA Order this document by BUV23/D SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications.	Original	BUV23/D* BUV23/D BUV23 motorola transistor 0063	PDF
PA1476 Abstract: transistor b 1202 uPA1476 uPA1476H nec UPA1476H NEC SIP pa*476 IEI-1213 MEI-1202 MF-1134 Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1476 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1476 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed	Original	PA1476 PA1476 PA1476H transistor b 1202 uPA1476 uPA1476H nec UPA1476H NEC SIP pa*476 IEI-1213 MEI-1202 MF-1134	PDF
ic 8705 Abstract: IC-8705 nec 8705 IC-3482 PA1436AH IEI-1209 UPA1436AH pa1436 transistor array high speed IEI-1213 Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1436A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1436A is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed	Original	PA1436A PA1436A PA1436AH ic 8705 IC-8705 nec 8705 IC-3482 PA1436AH IEI-1209 UPA1436AH pa1436 transistor array high speed IEI-1213	PDF
E13005-225 Abstract: e13005 2 e13005 e13005- 2 Text: E13005-225 Pb Free Plating Product Pb E13005-225 MJE Power Transistor Product specification Silicon NPN Power Transistor MJE13005 series DESCRIPTION Silicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits.	Original	E13005-225 MJE13005 E13005-225 e13005 2 e13005 e13005- 2	PDF
E13005-250 Abstract: e13005 2 E13005 transistor E13005 e13005- 2 .E13005 TRANSISTOR npn E13005 TRANSISTOR npn e13005-2 E13005 -2 Text: E13005-250 Pb Free Plating Product Pb E13005-250 MJE Power Transistor Product specification Silicon NPN Power Transistor MJE13005 series DESCRIPTION Silicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits.	Original	E13005-250 MJE13005 E13005-250 e13005 2 E13005 transistor E13005 e13005- 2 .E13005 TRANSISTOR npn E13005 TRANSISTOR npn e13005-2 E13005 -2	PDF
Untitled Abstract: No abstract text available Text: Back to Bipolar Power Transistors MJEC340 CHIP MEDIUM POWER NPN 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR NPN SILICON 300 VOLTS .useful for high-voltage general purpose applications. - Suitable for Transformerless, Line-Operated Equipment - Thermopad Construction Provides High Power Dissipation Rating	OCR Scan	MJEC340 3kA/10kA/10kA	PDF
adc 515 Abstract: MJ7000 Text: MJ7000 SILICON 30 AMPERE POWER TRANSISTOR HIGH-POWER NPN SILICON TRANSISTOR NPN SILICON . . . designed for use in industrial power amplifier and switching circuits applications. 100 V O L T S 150 W ATTS High DC Current Gain — h f E = 20-100 @ l c = 10 Adc	OCR Scan	MJ7000 adc 515 MJ7000	PDF

NPN SILICON POWER TRANSISTOR Search Results

NPN SILICON POWER TRANSISTOR Result Highlights (5)

NPN SILICON POWER TRANSISTOR Datasheets Context Search

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290A transistor

MJL3281A MJL1302A

MJEC340

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PNP Transistors

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bcp68t1

MJE802

IC-3479

IC-6634

BUV26

BUV23

PA1476

ic 8705

E13005-225

E13005-250

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adc 515