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    NPN SILICON POWER TRANSISTOR Search Results

    NPN SILICON POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    NPN SILICON POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5192G

    Abstract: No abstract text available
    Text: 2N5190G, 2N5191G, 2N5192G Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com 4.0 AMPERES NPN SILICON POWER TRANSISTORS


    Original     		PDF 2N5190G, 2N5191G, 2N5192G 2N5194, 2N5195. 2N5190G 2N5191G 2N5192G

    Untitled

    Abstract: No abstract text available
    Text: 2N5190G, 2N5191G, 2N5192G Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, − excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com 4.0 AMPERES NPN SILICON POWER TRANSISTORS


    Original     		PDF 2N5190G, 2N5191G, 2N5192G 2N5194, 2N5195. 2N5190G 2N5191G

    Untitled

    Abstract: No abstract text available
    Text: 2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, − excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com Features 4.0 AMPERES NPN SILICON POWER TRANSISTORS


    Original     		PDF 2N5190, 2N5191, 2N5192 2N5194, 2N5195. 2N5190 2N5191

    BD435

    Abstract: BD441
    Text: BD435, BD437, BD439, BD441 Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON


    Original     		PDF BD435, BD437, BD439, BD441 BD438 BD442 BD435 BD437 BD439 BD435 BD441

    Untitled

    Abstract: No abstract text available
    Text: BD435G, BD437G, BD439G, BD441G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON


    Original     		PDF BD435G, BD437G, BD439G, BD441G BD438 BD442 BD435G BD437G BD439G

    bd439g

    Abstract: No abstract text available
    Text: BD435G, BD437G, BD439G, BD441G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON


    Original     		PDF BD435G, BD437G, BD439G, BD441G BD438 BD442 BD435G BD437G BD439G

    2SC2073

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2073 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION The UTC 2SC2073 is an NPN silicon power transistors, it uses UTC’s advanced technology to provide customers with high collector


    Original     		PDF 2SC2073 2SC2073 2SC2073L- 2SC2073G-TA3-T O-220 QW-R221-021

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL  DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier.  FEATURES * Low frequency power amplifier 


    Original     		PDF 2SD667 2SD667 2SD667L-x-T9N-B 2SD667G-x-T9N-B 2SD667L-x-T9N-K 2SD667G-x-T9N-K O-92NL QW-R211-019

    290A transistor

    Abstract: 2SD667 transistor 2sd667
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL „ DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. „ FEATURES * Low frequency power amplifier * Halogen Free


    Original     		PDF 2SD667 2SD667 2SD667G-T9N-B 2SD667G-T9N-K O-92NL QW-R211-019 290A transistor transistor 2sd667

    290A transistor

    Abstract: transistor 2sd667 2SD667
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL „ DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. „ FEATURES * Low frequency power amplifier „ ORDERING INFORMATION


    Original     		PDF 2SD667 2SD667 2SD667L-T9N-B 2SD667G-T9N-B 2SD667L-T9N-K 2SD667G-T9N-K O-92NL QW-R211-019 290A transistor transistor 2sd667

    2sd882 nec

    Abstract: nec 2sd882 2SD882 transistor 2sd882
    Text: DATA SHEET NPN SILICON POWER TRANSISTOR 2SD882 NPN SILICON POWER TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SD882 is NPN silicon transistor suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver.


    Original     		PDF 2SD882 2SD882 2sd882 nec nec 2sd882 transistor 2sd882

    LLE18100X

    Abstract: MRA543 1702 NPN transistor transistor 431 ab BDT85 MCD660 MRA542 transistor w 431
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18100X NPN silicon planar epitaxial microwave power transistor Product specification November 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LLE18100X FEATURES


    Original     		PDF LLE18100X OT437A LLE18100X MRA543 1702 NPN transistor transistor 431 ab BDT85 MCD660 MRA542 transistor w 431

    2N3771

    Abstract: 2N3771 power circuit 2N3772 transistor 2N3771 1N5825 2N6257 MSD6100 2N3771 power transistor Power Transistor 2N3771
    Text: ON Semiconductort 2N3771* 2N3772 High Power NPN Silicon Power Transistors . . . designed for linear amplifiers, series pass regulators, and inductive switching applications. *ON Semiconductor Preferred Device 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON


    Original     		PDF 2N3771* 2N3772 2N3771 2N3771/D 2N3771 2N3771 power circuit 2N3772 transistor 2N3771 1N5825 2N6257 MSD6100 2N3771 power transistor Power Transistor 2N3771

    BU326A

    Abstract: BU326
    Text: BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS: POWER SUPPLIES ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN


    Original     		PDF BU326A BU326A BU326

    13003d

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS  DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003DE 13003DE 13003DEL-x-T60-K 13003DEG-x-T60-K 13003DEL-x-T92-B 13003DEG-at QW-R223-013 13003d

    13003D

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS „ DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003DE 13003DE 13003DEL-x-T60-F-K 13003DEG-x-T60-F-K 13003DEL-x-T92-A-B 13003DEG-x-T92-A-B 1300at QW-R223-013 13003D

    2N6388

    Abstract: No abstract text available
    Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration


    Original     		PDF 2N6388 O-220 O-220 P011C 2N6388

    2N6388

    Abstract: No abstract text available
    Text: 2N6388  SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration


    Original     		PDF 2N6388 O-220 O-220 2N6388

    2N6388

    Abstract: No abstract text available
    Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration


    Original     		PDF 2N6388 O-220 O-220 2N6388

    Untitled

    Abstract: No abstract text available
    Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE s ct u d o DESCRIPTION The device is a silicon Epitaxial-Base NPN power


    Original     		PDF 2N6388 O-220

    2N6388

    Abstract: No abstract text available
    Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration


    Original     		PDF 2N6388 O-220 O-220 2N6388

    Untitled

    Abstract: No abstract text available
    Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN DARLINGTON . HIGH CURRENT CAPABILITY . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration


    OCR Scan     		PDF 2N6388 O-220

    2SC2586

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in m illim eters The 2SC2586 is an NPN silicon epitaxial transistor designed for UHF-band medium power amplifiers.


    OCR Scan     		PDF 2SC2586 2SC2586 P11693EJ1V0DS00

    MJE2160

    Abstract: MJE1090 power transistor audio amplifier 500 watts MJE2090 MJE210 MJE2093 MJE2103
    Text: MJE2090 H, MJE2093 SILICON For Specifications, See MJE1090 Data. MJE2100 th r u MJE2103 (SILICON) For Specifications, See MJE 1090 Data. MJE2160 (silicon) PLASTIC MEDIUM-POWER NPN SILICON TRANSISTOR 1.5 AMPERE POWER TRANSISTOR NPN SILICON . . . designed for line operated audio output amplifier applications


    OCR Scan     		PDF MJE2090 MJE2093 MJE1090 MIE2100 MJE2103 MJE2160 SeeAN-415) MJE2160 power transistor audio amplifier 500 watts MJE2090 MJE210 MJE2093 MJE2103