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    NPN TRANSISTER Search Results

    NPN TRANSISTER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transister

    Abstract: NPN TRANSISTER BC847BS SC70-6 Dual General Purpose Transistors SC70-6
    Text: BC847BS NPN Multi-chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 200 mA. Sourced from Process 07. E2 B2 Dual NPN Signal Transister C1 NOTE: The pinouts are symmetrical; pin 1 and pin


    Original     		BC847BS SC70-6 BC847BS transister NPN TRANSISTER SC70-6 Dual General Purpose Transistors SC70-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC847BS NPN Multi-chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 200 mA. Sourced from Process 07. E2 B2 Dual NPN Signal Transister C1 NOTE: The pinouts are symmetrical; pin 1 and pin


    Original     		BC847BS SC70-6 BC847BS PDF

    2SB920

    Abstract: 2SD1236
    Text: 2SB920/2SD1236 PNP/NPN Epitaxial Planar-Type Sili con Transister For General Purpose Large-Current Switching satures: * Very Low Collector Saturation Voltage:VCE sat =-0.5V(PNP),0.4V(NPN)max. * Wide Safety Operation Area . ( ) is for 2SB920, the description other than which are common to 2SB920,2SD1236.


    OCR Scan     		0/2SD123G 2SB920, 2SB920 2SD1236. 2SB920/2SD1236 20Asec O-220AB SC-46 10IB1 -10IB2 2SD1236 PDF

    BC847PN

    Abstract: pnp transister symbol transister NPN TRANSISTER Tr2 transister 1A TRANSISTER chip transister marking B2 NPN/PNP transistor Silicon Transister
    Text: BC847PN NPN - PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 FEATURE       Epitaxial Die Construction Two internal isolated NPN/PNP transistors in one package Power Dissipation PCM : 0.2 W Temp. = 25˚C


    Original     		BC847PN OT-363 -10mA, 100MHz 200Hz 20-Oct-2009 BC847PN pnp transister symbol transister NPN TRANSISTER Tr2 transister 1A TRANSISTER chip transister marking B2 NPN/PNP transistor Silicon Transister PDF

    smd transistor k 1540

    Abstract: 703 TRANSISTOR smd transistor 835 transister transister smd DRF1401 NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js
    Text: UHF POWER TRANSISTOR DRF1401 NPN SiGe RF TRANSISTOR The DRF1401 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1401 can be used as a driver device or an output device, depending on the specific application.


    Original     		DRF1401 DRF1401 OT-223 900MHz 100nF 100pF smd transistor k 1540 703 TRANSISTOR smd transistor 835 transister transister smd NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js PDF

    Transistor B 1566

    Abstract: ic smd a 1712 smd transistor zl SMD l4 Transistor B 1566 Transistor SMD TRANSISTOR L6 smd transistor js RF transistor SOT-89 NPN medium power transistor in a smd transistor 1734
    Text: UHF POWER TRANSISTOR DRF1402F NPN SiGe RF TRANSISTOR SOT-89 The DRF1402F is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-89 SMD package. 4 The DRF1402F can be used as a driver device or an output device, depending on the specific application


    Original     		DRF1402F OT-89 DRF1402F OT-89 465MHz 100nF Transistor B 1566 ic smd a 1712 smd transistor zl SMD l4 Transistor B 1566 Transistor SMD TRANSISTOR L6 smd transistor js RF transistor SOT-89 NPN medium power transistor in a smd transistor 1734 PDF

    D13001

    Abstract: D13001A 3DD13001A Jilin Sino-Microelectronics transister Jilin 580V
    Text: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTER D13001A Characteristic/features ◆High breakdown voltage ◆High current capability ◆High switching speed ◆High reliability Application ◆Energy-saving light ◆Electronic ballasts ◆High frequency switching power supply


    Original     		D13001A 3DD13001A Zip132013 Tel864324678411 D13001 D13001A Jilin Sino-Microelectronics transister Jilin 580V PDF

    D13002S

    Abstract: D13002 Jilin Sino-Microelectronics 3dd13002s transister 3DD13002s to 126 POWER TRANSISTER NPN TRANSISTER Jilin 3DD13002
    Text: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTER D13002S Characteristic/features ◆High breakdown voltage ◆High current capability ◆High switching speed ◆High reliability Application ◆Energy-saving light ◆Electronic ballasts ◆High frequency switching power supply


    Original     		D13002S 3DD13002S Zip132013 Tel864324678411 D13002S D13002 Jilin Sino-Microelectronics transister 3DD13002s to 126 POWER TRANSISTER NPN TRANSISTER Jilin 3DD13002 PDF

    d13002

    Abstract: D13002E transister 1A TRANSISTER Silicon Transister D1300 power transister 3DD13002 Jilin Sino-Microelectronics
    Text: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTER D13002E Characteristic/features ◆High breakdown voltage ◆High current capability ◆High switching speed ◆High reliability Application ◆Energy-saving light ◆Electronic ballasts ◆High frequency switching power supply


    Original     		D13002E 3DD13002E Zip132013 Tel864324678411 d13002 D13002E transister 1A TRANSISTER Silicon Transister D1300 power transister 3DD13002 Jilin Sino-Microelectronics PDF

    D13003H

    Abstract: d13003 Jilin Sino-Microelectronics Jilin jili npn transister transister 3DD13003H 3DD13003 POWER TRANSISTER
    Text: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTER D13003H Characteristic/features ◆High breakdown voltage ◆High current capability ◆High switching speed ◆High reliability Application ◆Energy-saving light ◆Electronic ballasts ◆High frequency switching power supply


    Original     		D13003H 3DD13003H Zip132013 Tel864324678411 D13003H d13003 Jilin Sino-Microelectronics Jilin jili npn transister transister 3DD13003 POWER TRANSISTER PDF

    D13001S

    Abstract: 3DD13001S 3DD13001 transister Jilin Sino-Microelectronics d13001 Jilin
    Text: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTER D13001S Characteristic/features ◆High breakdown voltage ◆High current capability ◆High switching speed ◆High reliability Application ◆Energy-saving light ◆Electronic ballasts ◆High frequency switching power supply


    Original     		D13001S 3DD13001S Zip132013 Tel864324678411 D13001S 3DD13001 transister Jilin Sino-Microelectronics d13001 Jilin PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 STBV32/B Plastic-Encapsulate Transistors TO – 92 TRANSISTER NPN FEATURES z Medium Voltage Capability z Low Spread of Dynamic Parameters z Minimum Lot-to-lot Spread for Reliable Operation z Very High Switching Speed


    Original     		STBV32/B PDF

    IC 714

    Abstract: No abstract text available
    Text: Low Noise Matched Transister Array ICs TT1300 Series DESCRIPTION The TT1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading


    Original     		TT1300 IC 714 PDF

    Untitled

    Abstract: No abstract text available
    Text: EMZ51 Datasheet General Purpose Transister dual transistors <For Tr1(NPN)> l Outline Parameter VCEO Value IC 200mA EMZ51 (SC-107C) Parameter VCEO Value -20V IC -200mA EMT6 20V <For Tr2(PNP)>


    Original     		EMZ51 200mA SC-107C) -200mA 2SAR522 2SCR522 PDF

    AN5296 Application of the CA3018 Integrated

    Abstract: an5296 CA3146 CA3183 CA3183A CA3018 CA3046 CA3083 CA3146A CA3146AE
    Text: CA3146, CA3146A, CA3183, CA3183A Data Sheet September 1998 File Number 532.4 High-Voltage Transistor Arrays Features The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a common monolithic substrate. • Matched General Purpose Transistors


    Original     		CA3146, CA3146A, CA3183, CA3183A CA3183A, CA3183 120MHz AN5296 Application of the CA3018 Integrated an5296 CA3146 CA3183A CA3018 CA3046 CA3083 CA3146A CA3146AE PDF

    CT7605

    Abstract: vbe 12v, vce 600v NPN Transistor Westcode Darlington 30A darlington NPN 600V 50a transistor
    Text: WESTCODE SEMICONDUCTORS 1TE D ìto tiss G D G ain 1 r - S 3 -is-. Technical Publication WESTCODE SEMICONDUCTORS CT7605 Issue 3 . July 1985 NPN POWER TRANSISTOR CT7605 I K \ Ratings POWERSWITCH 600 VOLTS 250 AM PERES Fast Switching V CEV 600V V CEO SUS 500V


    OCR Scan     		CT7605 545kgf 100kgf 47nux 100mA lc200A CT7605 vbe 12v, vce 600v NPN Transistor Westcode Darlington 30A darlington NPN 600V 50a transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: EMD62 Datasheet Complex Digital Transistors Bias Resistor Built-in Transistors <For DTr1(NPN)> l Outline Parameter Value VCC 50V IC(MAX.) 100mA R1 47kΩ EMD62 R2 47kΩ (SC-107C) EMT6 <For DTr2(PNP)>


    Original     		EMD62 100mA SC-107C) -100mA DTA044E DTC044E PDF

    Untitled

    Abstract: No abstract text available
    Text: EMD72 Datasheet Complex Digital Transistors Bias Resistor Built-in Transistors <For DTr1(NPN)> l Outline Parameter Value VCC 50V IC(MAX.) 100mA R1 4.7kΩ EMD72 R2 47kΩ (SC-107C) EMT6 <For DTr2(PNP)>


    Original     		EMD72 100mA SC-107C) -100mA DTA043Z DTC043Z PDF

    Untitled

    Abstract: No abstract text available
    Text: EMD52 Datasheet Complex Digital Transistors Bias Resistor Built-in Transistors <For DTr1(NPN)> l Outline Parameter Value VCC 50V IC(MAX.) 100mA R1 22kΩ EMD52 R2 22kΩ (SC-107C) EMT6 <For DTr2(PNP)>


    Original     		EMD52 100mA SC-107C) -100mA DTA024E DTC024E PDF

    Untitled

    Abstract: No abstract text available
    Text: EMD59 Datasheet Complex Digital Transistors Bias Resistor Built-in Transistors <For DTr1(NPN)> l Outline Parameter Value VCC 50V IC(MAX.) 100mA R1 10kΩ EMD59 R2 47kΩ (SC-107C) EMT6 <For DTr2(PNP)>


    Original     		EMD59 100mA SC-107C) -100mA DTA014Y DTC014Y PDF

    Untitled

    Abstract: No abstract text available
    Text: EMD53 Datasheet Complex Digital Transistors Bias Resistor Built-in Transistors <For DTr1(NPN)> l Outline Parameter Value VCC 50V IC(MAX.) 100mA R1 10kΩ EMD53 R2 10kΩ (SC-107C) EMT6 <For DTr2(PNP)>


    Original     		EMD53 100mA SC-107C) -100mA DTA014E DTC014E PDF

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn PDF

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


    OCR Scan     		PDF

    transister

    Abstract: DC-12 DC-13 EN50081-2 EN50082-2 UZKB111 UZKB1115 UZKB811 UZKB812
    Text: UZKB1.fm 1 y [ W Q O O O N U P O œ @ y j œ @ O P P P R “ UZKB1 Series SMALL/SLIM OBJECT DETECTION AREA SENSORS CROSS-BEAM SCANNING SYSTEM TO DETECT SLIM OBJECTS Letter or Visiting Card Detectable! Emitting and Receiving Element Pitch: 10mm .394inch Just 10mm .394inch Thick


    Original     		394inch 394inch 531inch 394inch. AACT1B10E 200003-3YT transister DC-12 DC-13 EN50081-2 EN50082-2 UZKB111 UZKB1115 UZKB811 UZKB812 PDF