BUX99
Abstract: 250V transistor npn 2a 300V switching transistor 300V transistor npn 2a NPN Transistor 1A 400V
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX99 DESCRIPTION •High Collector Current-IC= 1.5A ·High Collector-Emitter Sustaining Voltage: VCEO SUS = 300V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in fast switching applications
|
Original
|
BUX99
-40mA
BUX99
250V transistor npn 2a
300V switching transistor
300V transistor npn 2a
NPN Transistor 1A 400V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: , Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BUX99 Silicon NPN Power Transistor DESCRIPTION • High Collector Current-lc= 1.5A • High Collector-Emitter Sustaining Voltager 300V(Min)
|
Original
|
BUX99
O-126
-40mA
|
PDF
|
NPN Transistor 15A 400V to3
Abstract: BUV62A NPN 400V 40A NPN 250W LE17 transistor IC 12A 400v
Text: FAST SWITCHING NPN POWER TRANSISTOR BUV62A • Fast Switching Times • Low Switching Losses • Low Saturation Voltage • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • High Reliability Screening Options Available
|
Original
|
BUV62A
O-204AE)
NPN Transistor 15A 400V to3
BUV62A
NPN 400V 40A
NPN 250W
LE17
transistor IC 12A 400v
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FAST SWITCHING NPN POWER TRANSISTOR BUV62A • Fast Switching Times • Low Switching Losses • Low Saturation Voltage • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • High Reliability Screening Options Available
|
Original
|
BUV62A
O-204AE)
|
PDF
|
Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
|
Original
|
2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ^Szmi-Conduetoi ^Products., {Inc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MJF18006 Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- 2 :V(BR)CBO=1000V(Min)
|
Original
|
MJF18006
O-220F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ^zml-tonauctoi U^i , Lfnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor MJE18006 DESCRIPTION • Collector-Base Breakdown Voltage:V(BR)CBO=1000V(Min) • High Switching Speed
|
Original
|
MJE18006
O-220C
|
PDF
|
ferroxcube E 40 core
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-R NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch
|
Original
|
MJE13003-R
290ns
MJE13003L-R-x-T92-B
QW-R221-022
ferroxcube E 40 core
|
PDF
|
transistor VCE 1000V
Abstract: npn 1000V 15A NPN Transistor VCEO 1000V 300V transistor npn 15a
Text: NTE2333 Silicon NPN Power Transistor for Switching Power Applications Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line– operated Switchmode Power supplies and electronic light ballasts. Features:
|
Original
|
NTE2333
NTE2333
130mA,
650mA
600mA,
transistor VCE 1000V
npn 1000V 15A
NPN Transistor VCEO 1000V
300V transistor npn 15a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-V NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch
|
Original
|
MJE13003-V
290ns
QW-R204-034
|
PDF
|
MJE13003
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch
|
Original
|
MJE13003
290ns
MJE13003L-x-T60-K
MJE13003G-at
QW-R204-004
MJE13003
|
PDF
|
transistor mje13003
Abstract: MJE13003 TO-92
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch
|
Original
|
MJE13003
290ns
MJE13003L-x-T60-K
MJE13003G-x-T60-K
MJE13003L-x-T6C-A-K
MJE13003Gues
QW-R204-004
transistor mje13003
MJE13003 TO-92
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch
|
Original
|
MJE13003
290ns
MJE13003-x-x-T60-K
MJE13003-x-x-T6C-A-K
MJE13003-x-x-T6C-F-K
MJE13003-x-x-T92-B
MJE13003-x-x-at
QW-R204-004
|
PDF
|
pswt
Abstract: MJE13003 TO-92 NPN Transistor 1.5A 700V
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch
|
Original
|
MJE13003
290ns
MJE13003L-x-T60-K
MJE13003G-x-T60-K
MJE13003L-x-T6C-A-K
MJE13003Gues
QW-R204-004
pswt
MJE13003 TO-92
NPN Transistor 1.5A 700V
|
PDF
|
|
|
transistor mje13003
Abstract: mje13003 to-92
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch
|
Original
|
MJE13003
290ns
MJE13003L-x-T60-K
MJE13003G-x-T60-K
MJE13003L-x-T6C-A-K
MJE13003Gues
QW-R204-004
transistor mje13003
mje13003 to-92
|
PDF
|
mje13003x
Abstract: MJE13003 transistor MJE13003 pswt MJE13003 TO-92 MJE13003l
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch
|
Original
|
MJE13003
290ns
MJE13003L-x-x-T60-K
MJE13003G-x-x-T60-K
O-126
MJE13003L-ues
QW-R204-004
mje13003x
MJE13003 transistor
MJE13003
pswt
MJE13003 TO-92
MJE13003l
|
PDF
|
MJE13003
Abstract: MJE13003 TO-92
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch
|
Original
|
MJE13003
290ns
QW-R204-004
MJE13003
MJE13003 TO-92
|
PDF
|
2SC4233
Abstract: T3V80HFX t3v80
Text: SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4233 Case : TO-220 T3V80HFX Unit : mm 3A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
|
Original
|
2SC4233
O-220
T3V80HFX)
2SC4233
T3V80HFX
t3v80
|
PDF
|
2SC4235
Abstract: T3W80HFX
Text: SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4235 Case : MTO-3P T3W80HFX Unit : mm 3A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
|
Original
|
2SC4235
T3W80HFX)
2SC4235
T3W80HFX
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4233 Case : TO-220 T3V80HFX Unit : mm 3A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
|
Original
|
2SC4233
O-220
T3V80HFX)
|
PDF
|
2SC4234
Abstract: ITO-220 TP3V80HFX
Text: SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4234 Case : ITO-220 TP3V80HFX Unit : mm 3A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage
|
Original
|
2SC4234
ITO-220
TP3V80HFX)
2SC4234
ITO-220
TP3V80HFX
|
PDF
|
IFRZ44
Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541
|
OCR Scan
|
2N3904
2N3906
2N4400
2N4401
2N4402
2N4403
2N5087
2NS088
2NS551
2N6S15
IFRZ44
IRFZ43
KA3842D
irf510 switch
TRANSISTOR MC7805CT
KA336Z
Transistor mc7812ct
high voltage pnp transistor 700v
IRFZ44 PNP
KS82C670N
|
PDF
|
IRF9210
Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF
|
OCR Scan
|
2N3904
2N3906
2N4401
2N4403
2N5087
2N5088
2N5551
2N6515
KSP06
KSP10
IRF9210
darlington NPN 600V 8a transistor
fet 10a 600v
darlington NPN 600V 12a transistor
transistor IRF9640
N-CH POWER MOSFET TO-92
600v 12A TO220F
NPN Transistor 600V 5A TO-220
transistor irf620
KSH117-1
|
PDF
|
TRANSISTOR J 5804 NPN
Abstract: TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621
Text: PART NUMBER INDEX ni CR O S E M I CO RP / UIATERTOUN PART NU M BER I N 5614, 1N5615, 1N5616, 1N5617, 1N5618, 1N5619, 1N5620, I N 5622, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, JTXV JTXV JTXV JTXV JTXV JTXV JTXV JTXV 1N5767 1N5802 1N5802, J, JTX, JTXV
|
OCR Scan
|
1N5615,
1N5616,
1N5617,
1N5618,
1N5619,
1N5620,
1N5767
1N5802
1N5802,
1N5804,
TRANSISTOR J 5804 NPN
TRANSISTOR J 5804
TRANSISTOR J 5803
j 5804 transistor
1N6621
|
PDF
|
