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    NPN TRANSISTOR 100A Search Results

    NPN TRANSISTOR 100A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR 100A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUT100

    Abstract: No abstract text available
    Text: BUT100 HIGH POWER NPN SILICON TRANSISTOR • ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATION MOTOR CONTROL ■ UNINTERRUPTABLE POWER SUPPLY ■ DESCRIPTION The BUT100 is a Multiepitaxial Planar NPN


    Original     		PDF BUT100 BUT100

    transistor B 892

    Abstract: but100 equivalent BUT100 NPN Transistor 100A NPN transistor Ic 50A npn transistor high current
    Text: BUT100 HIGH POWER NPN SILICON TRANSISTOR • ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATION MOTOR CONTROL ■ UNINTERRUPTABLE POWER SUPPLY ■ DESCRIPTION The BUT100 is a Multiepitaxial Planar NPN


    Original     		PDF BUT100 BUT100 transistor B 892 but100 equivalent NPN Transistor 100A NPN transistor Ic 50A npn transistor high current

    BUT100

    Abstract: but100 equivalent transistor B 892
    Text: BUT100 HIGH POWER NPN SILICON TRANSISTOR • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATION MOTOR CONTROL ■ UNINTERRUPTABLE POWER SUPPLY ■ DESCRIPTION The BUT100 is a Multiepitaxial Planar NPN


    Original     		PDF BUT100 BUT100 but100 equivalent transistor B 892

    but100

    Abstract: No abstract text available
    Text: BUT100 HIGH POWER NPN SILICON TRANSISTOR • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATION ■ MOTOR CONTROL ■ UNINTERRUPTABLE POWER SUPPLY DESCRIPTION The BUT100 is a Multiepitaxial Planar NPN


    Original     		PDF BUT100 BUT100

    MX0912B351Y

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A


    Original     		PDF MX0912B351Y OT439A SCA53 127147/00/02/pp12 MX0912B351Y

    MX0912B251Y

    Abstract: capacitor 470 uF
    Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A


    Original     		PDF MX0912B251Y OT439A SCA53 127147/00/02/pp12 MX0912B251Y capacitor 470 uF

    transistor 359 AJ

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT MZ0912B50Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides


    Original     		PDF MZ0912B50Y SCA53 127147/00/02/pp12 transistor 359 AJ

    BFG480W

    Abstract: BC817 RF POWER TRANSISTOR NPN 3GHz
    Text: DISCRETE SEMICONDUCTORS M3D124 BFG480W NPN wideband transistor Preliminary specification Supersedes data of 1998 Mar 06 File under Discrete Semiconductors, SC14 1998 Jul 09 Philips Semiconductors Preliminary specification NPN wideband transistor BFG480W FEATURES


    Original     		PDF M3D124 BFG480W SCA60 125104/00/02/pp16 BFG480W BC817 RF POWER TRANSISTOR NPN 3GHz

    LX1214E500X

    Abstract: BD239 BY239 SC15
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LX1214E500X NPN microwave power transistor Preliminary specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Preliminary specification NPN microwave power transistor


    Original     		PDF LX1214E500X SCA53 127147/00/02/pp12 LX1214E500X BD239 BY239 SC15

    philips ferrite material specifications

    Abstract: BD239 BY239 LXE15450X SC15 mlc444
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LXE15450X NPN microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor


    Original     		PDF LXE15450X SCA53 127147/00/02/pp12 philips ferrite material specifications BD239 BY239 LXE15450X SC15 mlc444

    MZ0912B50Y

    Abstract: MGL050
    Text: DISCRETE SEMICONDUCTORS DATA SHEET MZ0912B50Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides


    Original     		PDF MZ0912B50Y SCA53 127147/00/02/pp12 MZ0912B50Y MGL050

    epsilam 10

    Abstract: BDT91 BY239 LFE15600X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LFE15600X NPN microwave power transistor Product specification Supersedes data of January 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


    Original     		PDF LFE15600X SCA53 127147/00/02/pp12 epsilam 10 BDT91 BY239 LFE15600X

    LLE16350X

    Abstract: BDT91 BY239
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE16350X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 03 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


    Original     		PDF LLE16350X SCA53 127121/00/04/pp12 LLE16350X BDT91 BY239

    diode BY239

    Abstract: BD239 BY239 LLE16045X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE16045X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


    Original     		PDF LLE16045X SCA53 127147/00/02/pp12 diode BY239 BD239 BY239 LLE16045X

    philips ferrite 4b1

    Abstract: 12NC philips BDT91 BY239 LLE18300X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18300X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor LLE18300X FEATURES QUICK REFERENCE DATA


    Original     		PDF M3D159 LLE18300X SCA63 125002/00/03/pp12 philips ferrite 4b1 12NC philips BDT91 BY239 LLE18300X

    BDT91

    Abstract: BY239 LLE15370X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE15370X NPN microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


    Original     		PDF LLE15370X SCA53 127147/00/02/pp12 BDT91 BY239 LLE15370X

    equivalent of SL 100 NPN Transistor

    Abstract: TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18040X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor LLE18040X FEATURES QUICK REFERENCE DATA


    Original     		PDF M3D159 LLE18040X SCA63 125002/00/02/pp12 equivalent of SL 100 NPN Transistor TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR

    BFG480W

    Abstract: C5 MARKING TRANSISTOR 9335 895 MW1418 TRANSISTOR 9335
    Text: DISCRETE SEMICONDUCTORS M3D124 BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 1998 Oct 21 Philips Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING • High power gain PIN DESCRIPTION


    Original     		PDF M3D124 BFG480W MSB842 SCA60 125104/00/03/pp16 BFG480W C5 MARKING TRANSISTOR 9335 895 MW1418 TRANSISTOR 9335

    philips ferrite 4330-030

    Abstract: philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


    Original     		PDF M3D159 LLE18010X SCA63 125002/00/02/pp12 philips ferrite 4330-030 philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips

    MX1011B700Y

    Abstract: MRA444
    Text: DISCRETE SEMICONDUCTORS DATA SHEET MX1011B700Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium


    Original     		PDF MX1011B700Y SCA53 127147/00/02/pp12 MX1011B700Y MRA444

    BFG480W

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT M3D124 BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 1998 Oct 21 NXP Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING • High power gain PIN DESCRIPTION


    Original     		PDF M3D124 BFG480W MSB842 R77/03/pp16 BFG480W

    bdl 40

    Abstract: l43 transistor transistor marking 2d ghz 9335 895 BFG480W
    Text: DISCRETE SEMICONDUCTORS sheet BFG480W NPN wideband transistor Preliminary specification Supersedes data of 1998 Mar 06 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Jul 09 PHILIPS Philips Semiconductors Preliminary specification NPN wideband transistor


    OCR Scan     		PDF BFG480W BFG480W SCA60 04/00/02/pp1 bdl 40 l43 transistor transistor marking 2d ghz 9335 895

    transistor B 1184

    Abstract: MGR638 BFG480W
    Text: DISCRETE SEMICONDUCTORS BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 Philips Semiconductors 1998 Oct 21 PHILIPS Philips Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING • High power gain


    OCR Scan     		PDF BFG480W BFG480W MSB842 SCA60 125104/00/03/pp16 transistor B 1184 MGR638

    BUT100

    Abstract: No abstract text available
    Text: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ BUT100 HIGH POWER NPN SILICON TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATION . MOTOR CONTROL . UNINTERRUPTABLE POWER SUPPLY


    OCR Scan     		PDF BUT100 BUT100 P0030